Manouchehr Hosseini

@basu.ac.ir

Department of Electrical Engineering
Bu-Ali Sina University

RESEARCH INTERESTS

Nanotechnology
2D Materials

317

Scholar Citations

8

Scholar h-index

7

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Anti-reflective MX (M= Sc and Y; X= N, P, As, Sb and Bi) monolayers: structural, electronic and optical study
    SB Touski, M Hosseini, A Kokabi
    Semiconductor Science and Technology 39 (1), 015002 2023

  • Improving robotic hand control via adaptive Fuzzy-PI controller using classification of EMG signals
    M Barfi, H Karami, F Faridi, Z Sohrabi, M Hosseini
    Heliyon 8 (12) 2022

  • Effects of S-vacancy on electrical performance of monolayer TMD nanoribbons field-effect transistor
    M Hosseini, A Akbarikho, SB Touski
    Materials Science in Semiconductor Processing 152, 107080 2022

  • Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
    N Ghobadi, M Hosseini, SB Touski
    IEEE Transactions on Electron Devices 69 (2), 863-869 2022

  • A tunable hybrid graphene-metal metamaterial absorber for sensing in the THz regime
    MM Sadafi, H Karami, M Hosseini
    Current Applied Physics 31, 132-140 2021

  • Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance
    M Hosseini, S Babaee Touski
    Journal of Electronic Materials 49, 4085-4090 2020

  • Electrical and electronic properties of strained mono-layer inte
    SB Touski, M Ariapour, M Hosseini
    Physica E: Low-dimensional Systems and Nanostructures 118, 113875 2020

  • A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness
    SB Touski, M Hosseini
    Physica E: Low-dimensional Systems and Nanostructures 116, 113763 2020

  • Investigation of layer number effects on the electrical properties of strained multi-layer MoS2
    M Hosseini, H Karami, Z Sohrabi
    Journal of Computational Electronics 18, 1236-1242 2019

  • Electrical and ELectronic Properties of Strained Mono-layer InTe
    S Babaee Touski, M Ariapour, M Hosseini
    arXiv e-prints, arXiv: 1905.04879 2019

  • Tunable Electromagnetic Shield Using Periodic Graphene-Based Structures in the Terahertz Regime
    E Dezhband, H Karami, SM Hoseini
    TABRIZ JOURNAL OF ELECTRICAL ENGINEERING 49 (187), 143-151 2019

  • Switchable Abnormal THz Wave Reflector Based on Molybdenum Disulfide (MoS2)
    E Dejband, H Karami, M Hosseini, P Torkaman
    2018 Fifth International Conference on Millimeter-Wave and Terahertz 2018

  • Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors
    M Hosseini, H Karami
    Journal of Computational Electronics 17 (4), 1603-1607 2018

  • Tunable electromagnetic interference shield using periodic graphene-based structures in the terahertz regime
    E Dejband, H Karami, M Hosseini
    2017 International Conference on Circuits, Devices and Systems (ICCDS), 34-37 2017

  • Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications
    M Hosseini, M Elahi, M Pourfath, D Esseni
    Applied Physics Letters 107 (25) 2015

  • Strain engineering of single-layer MoS2
    M Hosseini, M Elahi, EA Soleimani, M Pourfath, D Esseni
    2015 45th European Solid State Device Research Conference (ESSDERC), 314-317 2015

  • Strain induced mobility modulation in single-layer MoS2
    M Hosseini, M Elahi, M Pourfath, D Esseni
    Journal of Physics D: Applied Physics 48 (37), 375104 2015

  • Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2(, W;, Se)
    M Hosseini, M Elahi, M Pourfath, D Esseni
    IEEE Transactions on Electron Devices 62 (10), 3192-3198 2015

  • Significant Hydrogen Storage Performance Improvement in Lithiumless Pristine Ben4 and Mgn4 by In-Plane
    M Hosseini, S Babaee Touski, A Kokabi
    Alireza, Significant Hydrogen Storage Performance Improvement in Lithiumless

MOST CITED SCHOLAR PUBLICATIONS

  • Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2(, W;, Se)
    M Hosseini, M Elahi, M Pourfath, D Esseni
    IEEE Transactions on Electron Devices 62 (10), 3192-3198 2015
    Citations: 97

  • Strain induced mobility modulation in single-layer MoS2
    M Hosseini, M Elahi, M Pourfath, D Esseni
    Journal of Physics D: Applied Physics 48 (37), 375104 2015
    Citations: 57

  • Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications
    M Hosseini, M Elahi, M Pourfath, D Esseni
    Applied Physics Letters 107 (25) 2015
    Citations: 45

  • A tunable hybrid graphene-metal metamaterial absorber for sensing in the THz regime
    MM Sadafi, H Karami, M Hosseini
    Current Applied Physics 31, 132-140 2021
    Citations: 20

  • Electrical and electronic properties of strained mono-layer inte
    SB Touski, M Ariapour, M Hosseini
    Physica E: Low-dimensional Systems and Nanostructures 118, 113875 2020
    Citations: 20

  • Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
    N Ghobadi, M Hosseini, SB Touski
    IEEE Transactions on Electron Devices 69 (2), 863-869 2022
    Citations: 19

  • A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness
    SB Touski, M Hosseini
    Physica E: Low-dimensional Systems and Nanostructures 116, 113763 2020
    Citations: 18

  • Tunable electromagnetic interference shield using periodic graphene-based structures in the terahertz regime
    E Dejband, H Karami, M Hosseini
    2017 International Conference on Circuits, Devices and Systems (ICCDS), 34-37 2017
    Citations: 9

  • Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors
    M Hosseini, H Karami
    Journal of Computational Electronics 17 (4), 1603-1607 2018
    Citations: 8

  • Investigation of layer number effects on the electrical properties of strained multi-layer MoS2
    M Hosseini, H Karami, Z Sohrabi
    Journal of Computational Electronics 18, 1236-1242 2019
    Citations: 7

  • Improving robotic hand control via adaptive Fuzzy-PI controller using classification of EMG signals
    M Barfi, H Karami, F Faridi, Z Sohrabi, M Hosseini
    Heliyon 8 (12) 2022
    Citations: 5

  • Switchable Abnormal THz Wave Reflector Based on Molybdenum Disulfide (MoS2)
    E Dejband, H Karami, M Hosseini, P Torkaman
    2018 Fifth International Conference on Millimeter-Wave and Terahertz 2018
    Citations: 5

  • Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance
    M Hosseini, S Babaee Touski
    Journal of Electronic Materials 49, 4085-4090 2020
    Citations: 4

  • Effects of S-vacancy on electrical performance of monolayer TMD nanoribbons field-effect transistor
    M Hosseini, A Akbarikho, SB Touski
    Materials Science in Semiconductor Processing 152, 107080 2022
    Citations: 2

  • Anti-reflective MX (M= Sc and Y; X= N, P, As, Sb and Bi) monolayers: structural, electronic and optical study
    SB Touski, M Hosseini, A Kokabi
    Semiconductor Science and Technology 39 (1), 015002 2023
    Citations: 1