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Daniel Araújo Gay

Science Faculty · Cadiz University

https://researchid.co/daniel.araujouca.es
@uca.es
155Scopus Publications
3015Google Scholar Citations
30Google Scholar h-index
98Google Scholar i10-index

Biography

Prof. Daniel ARAUJO is Dr. in Science and physicist of the EPFL Switzerland, (PhD in 1992). Nowadays, he is Full Professor at University of Cadiz (Spain, since 2010) in the Department of Material Science and Engineering and at the Lyon Institute of Technology (INSA-Lyon, France, since 2004, presently in détachement). His activity is actually focused on two different topics: (i) aerospace materials in collaboration with Airbus and FIDAMC (Foundation for Research, Development and Application of Composite Materials), (ii) Homoepitaxial diamond for power devices. In the latter, he is responsible of H2020 and national projects. He has been supervisor of 11 doctoral theses and is author of more than 140 JCR publications and 16 invited/plenary conferences.

Education

1-. Universidad de Cádiz: Cadiz, Andalucía, ES 1993-01-01 hasta 1994-12-01 | (Ciencias de los Materiales Ingeniería Metalúrgica y Química Inorgánica) 2-. IBM Zurich Research Laboratory: Zurich, Zürich, CH 1992-08-01 hasta 1993-02-01Education 3-. École Polytechnique Fédérale de Lausanne: Lausanne, VD, CH 1988-10-01 hasta 1992-09-30 | (Instituto de micro-optoelectrónica (IMO) 4-. Ecoles du canton de Vaud: Lausanne, Cantón de Vaud, CH 1982-01-01 hasta 1988-01-01 | 5-. École Polytechnique Fédérale de Lausanne: Lausanne, VD, CH 1982-10-01 hasta 1987-06-01 |

Recent Scopus Publications

  1. Semi-empirical model for Impurity-to-Band energy reduction in semiconducting boron-doped diamond
    Diamond and Related Materials, 2026
  2. Smart Cut Transfer of Wide-Bandgap Materials: The Case of Diamond
    Physica Status Solidi A Applications and Materials Science, 2026
  3. Ohmic contacts on (111)-oriented phosphorus-doped diamond fabricated by FIB transformation and surface Ga+ implantation
    Diamond and Related Materials, 2026
  4. Retraction notice to “FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier” [Appl. Surf. Sci. 674 (2024) 160909] (Applied Surface Science (2024) 674, (S0169433224016222), (10.1016/j.apsusc.2024.160909))
    Applied Surface Science, 2025
  5. Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
    Crystal Growth and Design, 2025

Grants / Consultancy

1-. Nuevas aleaciones de carbono semiconductoras para una nueva generación de dispositivos electrónicos (CARBOTRONICS-PUENTE) Universidad de Cádiz (Puerto Real, Cádiz)2020-04...

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