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Mustafa SHQAIR

None · LAboratoire PLasma et Conversion d'Energie (LAPLACE)

https://researchid.co/mustafa-shqair
@laplace.univ-tlse.fr
10Scopus Publications
57Google Scholar Citations
5Google Scholar h-index
1Google Scholar i10-index

Biography

I am a postdoctoral researcher at LAPLACE Laboratory / Toulouse INP, specializing in the reliability and failure mechanisms of microelectronic modules under extreme conditions using advanced multiphysics simulations. My work combines physicochemical analysis, microstructural damage modeling, and FEM to enhance high-reliability power electronics. In my current role, I developed a 2D electrothermal-metallurgical-elastoplastic model in COMSOL to simulate short-circuit events in SiC MOSFETs, predicting failure thresholds and improving device protection. Experimental validation confirmed the model’s accuracy in crack initiation and aging. I hold a Ph.D. from ENS Paris-Saclay University (2022), where I studied crack progression in IGBT components using microstructural analysis and cohesive zone modeling. I also earned a Master’s and Bachelor’s in Physical & Materials Chemistry from Lebanese University.

Education

Doctor of Philosophy - PhD from École normale supérieure Paris-Saclay University, Electrical and Electronics Engineering Topic: Physicochemical & Microstructural Reliability Analysis of Semiconductor Modules Metallic Connections

Recent Scopus Publications

  1. In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction
    Microelectronics Reliability, 2026
  2. Preliminary 2D elastoplastic modeling of gate cracking in SiC MOSFETs under short-circuit conditions across a wide temperature-range using rankine's damage energetic approach
    Microelectronics Reliability, 2025
  3. Transient thermal 2D FEM analysis of SiC MOSFET in short-circuit operation including high-temperature material laws and phase transition of aluminum source electrode
    Microelectronics Reliability, 2024
  4. A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)
    IEEE International Reliability Physics Symposium Proceedings, 2024
  5. Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM
    Microelectronics Reliability, 2023

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