Abdelmoumene Laidouci
@abdelmoumenelaidouci@univ-blida.dz
Physics / Faculty of Sciences
Saad Dahlab University (Blida1)
Ph.D. in fundamental and applied physics at the department of physics, Saad Dahlab University (BLIDA1).
EDUCATION
Ph.D. in Fundamental and Applied Physics (Physics), 2016 to 2022. (Algeria)
Master’s degree in Material and radiation (Physics), 2014 to 2016. (Algeria)
Licentiate degree in Fundamental Physics (Physics), 2011 to 2014. (Algeria)
Baccalaureate (Experimental Sciences), Diar Bahri High School, Blida, 2011. (Algeria)
RESEARCH, TEACHING, or OTHER INTERESTS
Condensed Matter Physics, Physical and Theoretical Chemistry, Renewable Energy, Sustainability and the Environment, Modeling and Simulation
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Pratap Kumar Dakua, Deepak Kumar Panda, Savita Kashyap, Abdelmoumene Laidouci, and Sadanand
Wiley
AbstractThe present paper deals with the photovoltaic performance‐based numerical evaluation of copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field (BSF) layer. CZTS has been considered a leading candidate for the fabrication of solar devices owing to its availability and absence of toxicity. Adding a BSF layer to a solar device is a novel way to boost efficiency. It reduces the recombination of the carriers at the back surface, thus increasing the overall current output of the solar cells. SCAPS 1D simulator is used to study the impact of several parameters on electrical properties like temperature, the thickness of the CZTS layer, acceptor doping concentration, and the impact of series and shunt resistances. Considering the optimized parameters in each layer of the solar cells, this work delivers 24.7% efficiency with the BSF layer, which is 8% more than that without the BSF layer. The results of this modeling will facilitate researchers to fabricate a highly efficient CZTS solar cell.
A. Aissat, L. Chenini, A. Laidouci, S. Nacer, and J.P. Vilcot
Elsevier BV
Abdelmoumene Laidouci, Pratap Kumar Dakua, Deepak Kumar Panda, and Savita Kashyap
Elsevier BV
Abdelmoumene Laidouci, Mamta, V.N. Singh, Pratap Kumar Dakua, and Deepak Kumar Panda
Elsevier BV
Pratap Kumar Dakua, Deepak Kumar Panda, Abdelmoumene Laidouci, and Sradhanjali Sahu
IEEE
CZTS (copper zinc tin sulfide) is a promising candidate for solar cell applications. In this simulation-based work, the comparison of cell output variation is examined by considering the layer thickness as well as series and shunt resistances. When CuI is used as a hole transport layer (HTL), the Schottky barrier is reduced and efficiency is raised. The final optimized cell with CuI as the HT layer obtained a power conversion efficiency of 16.92%. The performance of the device was compared with and without HTL. The study’s findings pave the path for using CuI as an HTL for solar cell device production using CZTS.
A. Laidouci, A. Aissat, and J. P. Vilcot
Springer Singapore
A. Laidouci, A. Aissat, and J.P. Vilcot
Elsevier BV
Abdelmoumene Laidouci, Abdelkader Aissat, and Jean Pierre Vilcot
IEEE
In this paper, $w$ e are interested in the simulation and modeling of ZnGexSn1-xN2/GaN quantum wells (QWs) solar cell, according to many studies before the solar cells always are sensitive to the temperature, for this case, the effect of the temperature on photovoltaic characteristics such as power density-voltage P(V), current density-voltage I(V), and the external quantum efficiency EQE are investigated. The most parameter affected by the changing in the temperature is the open circuit voltage Voc. for optimization. It has been found at 280 K the cell gives better results of open circuit voltage and conversion efficiency their values are 2.18 V and 2.75% respectively.
Nabila Harchouch, Abdelkader Aissat, Abdelmoumene Laidouci, and Jean Pierre Vilcot
IEEE
In this work, we have studied the GaSb/GaAs Quantum Dot Solar Cell for different number of quantum dot layers, the short circuit current, the open circuit voltage, the fill factor and the conversion efficiency are improved with increasing the insertion of quantum dot layers in the intrinsic region; The best values of these parameters are obtained for structure with 30 QD layers. These results are supported by the external quantum efficiency measurements. Then the analysis of the GaSb/GaAs -30 QDSC with temperature change range from 260 K to 400 K indicates that the photovoltaic device performance are degraded when temperature increases such as the open circuit voltage, the fill factor and the conversion efficiency, however the short circuit current shows an enhancement of about 20.24% compared with its value obtained at room temperature.
Abdelmoumene Laidouci, Abdelkader Aissat, and Jean Pierre Vilcot
IEEE
In this paper, we are interested in simulations and modeling of ZnGeN2/GaN quantum wells solar cell, like all other solar cells as we know always are sensitive to the temperature, many effects like number of quantum wells (NQWs), temperature (T) on photovoltaic properties such as current density-voltage I(V), power density-voltage P(V) and the external quantum efficiency (EQE) are investigated. The most parameter affected by the change in temperature is the open circuit voltage (Voc). We found in a temperature of 280 K gives better results of open circuit voltage (Voc), maximum power output (Pm), and conversion efficiency $(\\eta)$ their values are 2.87 V, 21.12 mW/cm2’ and 21.22% respectively.
A. Aissat, A. Bahi Azzououm, F. Benyettou, and A. Laidouci
Springer International Publishing
N. Harchouch, Abdelkader Aissat, A. Laidouci, and J. P. Vilcot
Springer International Publishing