Ainhoa Morales-Fernandez

@uvigo.gal

PhD Student
University of Vigo (atlanTTic Research Center)

I was born in Zürich, Switzerland. I received the B.Sc. and M.Sc. degrees in Telecommunication Engineering from the University of Vigo (UVigo), Spain, in 2021, where I am currently pursuing the Ph.D. degree in Communications Engineering, with a focus on electronic systems for communications.

In 2018, I was an intern at the atlanTTic Research Center for Telecommunication Technologies, Vigo, where I received advanced training in the design of hybrid power amplifiers using microstrip technology. Since 2020, I have been working as a Research Assistant at atlanTTic.

My research interests include nonlinear device modeling and microwave circuit design.

RESEARCH, TEACHING, or OTHER INTERESTS

Engineering, Electrical and Electronic Engineering
4

Scopus Publications

Scopus Publications

  • Hybrid balanced frequency doubler up-converting from 2.45 to 4.9 GHz using packaged GaN HEMTs and a Moore space-filling coupler design approach
    Ainhoa Morales Fernandez, Monica Fernandez Barciela, Fernando Martin Rodriguez, Paul Tasker
    International Journal of Microwave and Wireless Technologies, 2025
    A hybrid Balanced Frequency Doubler working up-converting from 2.45 to 4.9 GHz using packaged GaN HEMTs and with no amplification stage, was designed and its performance validated with measurements. The design procedure is detailed, including a brief study of the HEMT optimum bias point. Moore space filling curves are used in the design of the input hybrid coupler, to reduce its size at the fundamental frequency. A maximum measured conversion gain of 11.5 dB with a second harmonic output power of 26.3 dBm was obtained, while fundamental and third harmonic suppression exceeds 40 dBc.
  • Cardiff Behavioral Model Analysis for Frequency Doubler Design
    Ainhoa Morales-Fernandez, Fernando Martin-Rodriguez, Rocio Moure-Fernandez, Monica Fernandez-Barciela, Aleksander Bogusz, Paul J. Tasker
    2025 IEEE MTT S Latin America Microwave Conference Lamc 2025 Proceedings, 2025
    The Cardiff behavioral model is a robust nonlinear tool for guiding nonlinear circuit design. This paper proposes a methodology to generate Cardiff AB models suitable for microwave frequency doubler optimization. Active Load-Pull data from both measurement and simulations are processed through a self-developed MATLAB application to extract and evaluate Cardiff AB models formulated with different mixing orders and number of parameters. Moreover, the role of harmonic source and load impedances in model extraction for frequency doubler design space prediction is studied.
  • Single-Ended and Balanced Frequency Doublers 2.45 to 4.9 GHz using GaN FETs
    Ainhoa Morales-Fernandez, Maria Marante-Boado, Pedro Toimil-Cornado, Monica Fernandez-Barciela, Fernando Martin-Rodriguez, Paul J. Tasker
    2024 54th European Microwave Conference Eumc 2024, 2024
    In this work, hybrid GaN-based single-ended and balanced active frequency doubler prototypes, from 2.45 to 4.9 GHz, have been designed. To minimize the balanced topology area, the Moore space-filling curve has been used in the design of the 180º hybrid coupler. Conversion gain exceeds 10 dB in all the measured single-ended prototypes and no amplification stage was required. Balanced design obtained in simulation 11.3 dB of conversion gain and 26.3 dBm of output power whereas the fundamental frequency suppression exceeds 38 dBc.
  • Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications
    Ainhoa Morales-Fernandez, Monica Fernandez-Barciela, Fernando Isasi-Vicente, Fernando Martin-Rodriguez, Paul J. Tasker
    IEEE Access, 2022
    A hybrid dual-band power amplifier (PA) prototype working at two Industrial, Scientific and Medical (ISM) bands, 2.4-2.5 GHz and 5.725-5.875 GHz, was designed for Unmanned Aerial Vehicles (UAVs) communication applications in Spain. Initially, two single-band PA prototypes centered at each band were designed to evaluate the single-band achievable RF performance. In all the PAs, the Gallium Nitride (GaN) Qorvo HEMT TGF2977-SM was used, as well as microstrip transmission lines technology. To achieve wideband, good linearity and efficiency, the PAs were designed in class J. The measured results for the dual-band PA prototype at the 2dB compression point at the lower and higher bands, respectively, are 14.8 dB and 11.2 dB of Transducer Power Gain (GT ), 35.7 dBm and 34.8 dBm of RF output power (Pout) and 59.2% and 43.5% of Drain Efficiency (η). At 3dB compression the respective lower and higher bands results are 37.9 dBm and 37 dBm of Pout and 73.9% and 55% of η.