Ainur
@zhubanov.edu.kz
physics department
K. Zhubanov Aktobe Regional University
RESEARCH, TEACHING, or OTHER INTERESTS
Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
Scopus Publications
Scopus Publications
Daulet Sergeyev, Ainur Duisenova, Andrei Solovjov, and Narmin Ismayilova
Elsevier BV
Assel Istlyaup, Ainur Duisenova, Lyudmila Myasnikova, Daulet Sergeyev, and Anatoli I. Popov
MDPI AG
The progress of modern electronics largely depends on the possible emergence of previously unknown materials in electronic technology. The search for and combination of new materials with extraordinary properties used for the production of new small-sized electronic devices and the improvement of the properties of existing materials due to improved technology for their manufacture and processing, in general, will determine the progress of highly promising electronics. In order to solve the problematic tasks of the miniaturization of electronic components with an increase in the level of connection of integrated circuits, new forms of electronic devices are being created using nanomaterials with controlled electrophysical characteristics. One of the unique properties of fullerene structures is that they can enclose one or several atoms inside their carbon framework. Such structures are usually called endohedral fullerenes. The electronic characteristics of endohedral fullerenes significantly depend on the properties of the encapsulated atom, which makes it possible to control them by choosing the encapsulated atom required by the property. Within the framework of the density functional theory in combination with the method of the nonequilibrium Green’s functions, the features of electron transport in fullerene nanojunctions were considered, which demonstrate “core–shell” nanoobjects, the “core” of which is an alkali halide crystal—KI—and the “shell” of which is an endohedral fullerene C180 located between the gold electrodes (in the nanogap). The values of the total energy and the stability diagram of a single-electron transistor based on endohedral fullerene (KI)@C180 were determined. The dependence of the total energy of fullerene molecules on the charge state is presented. The ranges of the Coulomb blockade, as well as their areas associated with the central Coulomb diamond were calculated.
A. Duisenova and D. Sergeyev
Elsevier BV
D Sergeyev, A Duisenova, and Zh Embergenov
IOP Publishing
Abstract In this work, within the framework of density functional theory combined with the method of nonequilibrium Green’s functions the density of states, transmission spectrum, current-voltage characteristics, and differential conductivity of Li-intercalated graphene (LiC6) have been determined. It is shown that in the energy range of -1.3÷-1.05 eV the quasiparticle transport through the nanostructure is disable. The features of IV- and dI/dV-characteristics of LiC6 in the form of decreasing of resistance in the range of -0.4÷0.4 V were revealed, and in the interval of 0.4÷1.4 V formation of negative differential resistance area, related to scattering of quasiparticles. It is established, that LiC6 nanodevice has 12÷13 ballistic channels and has the maximum amount of conductance 12÷13G0 , where Go is the conductance quantum.
A G Duisenova and D M Sergeyev
IOP Publishing
Abstract In this work within the framework of the density functional theory and the method of nonequilibrium Green’s functions the dependences of the total energy of molecules C80-SET and (Sc3N)@C80 - SET on their total charge, the dependence of the total energy from the gate voltage and the stability diagram of the single-electron transistor have been determined. It is noted that for transition to switch to on mode (Sc3N)@C80-SET it is necessary to apply the gate voltage in the range from 0.019 ≤ VG ≤ 5.940 with the bias voltage -2.040 ≤ VSD ≤ 2.155 V. Considering that at values of bias voltage equal to –0.381 ≤ VSD ≤ 0.533 V there is no voltage on the substrate (VG = 0 V) and electric current does not flow. It is shown that the total energy at negative values of charge is higher than at positive charges and that the area of the Coulomb rhombus in fullerene with scandium nitride is 5.3 times larger than in “pure” fullerene.
D. M. Sergeyev and A. G. Duisenova
Pleiades Publishing Ltd
D. Sergeyev, N. Zhanturina, L. Myasnikova, A.I. Popov, A. Duisenova, and A. Istlyaup
Walter de Gruyter GmbH
Abstract The paper deals with the model research of electric transport characteristics of stressed and non-stressed FeSe monolayers. Transmission spectra, current-voltage characteristic (CVC) and differential conductivity spectra of two-dimensional FeSe nanostructure have been calculated within the framework of the density functional theory and non-equilibrium Green’s functions (DFT + NEGF). It has been shown that the electrophysical properties depend on the geometry of the sample, the substrate, and the lattice constant. On CVC of non-stressed sample in the range from −1.2 V to −1 and from 1.2 V to 1.4 V, a region of negative differential resistance (NDR) has been observed. NDR is at both signs of the applied voltage due to the symmetry of the nanostructure. d2I/dV2 is used to determine the nature of the electron-phonon interaction and the features of quasiparticle tunnelling in stressed and non-stressed samples. The results obtained can be useful for calculating new elements of 2D nanoelectronics.