RECENT SCHOLAR PUBLICATIONS
- Estimating the Number of Defects in a Single Breakdown Spot of a Gate DielectricA Ranjan, A Padovani, B Dianat, N Raghavan, KL Pey, SJ O’SheaIEEE Electron Device Letters 2024
- Adhesion Microscopy as a Nanoscale Probe for Oxidation and Charge Generation at Metal-Oxide InterfacesA Ranjan, A Padovani, B Dianat, N Raghavan, KL Pey, SJ O’SheaACS Applied Electronic Materials 5 (9), 5176-5186 2023
- Convolution Neural Networks and Position Averaged Convergent Beam Electron Diffraction for Determining the Structure of 2D MaterialsAB Yankovich, M Rding, VW Skrstrm, A Ranjan, E OlssonMicroscopy and Microanalysis 29 (Supplement_1), 691-693 2023
- Probing Dielectric Breakdown in Single Crystal Hexagonal Boron NitrideA Ranjan, AB Yankovich, K Watanabe, T Taniguchi, E OlssonMicroscopy and Microanalysis 29 (Supplement_1), 1998-2000 2023
- Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopyA Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang, L Sun, J Chu, KL PeyApplied Materials Today 31, 101739 2023
- Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdownA Ranjan, SJ O’Shea, A Padovani, T Su, P La Torraca, YS Ang, ...ACS Applied Electronic Materials 5 (2), 1262-1276 2023
- Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation processA Deogaonkar, M Seal, A Senapati, S Ginnaram, A Ranjan, S Maikap, ...Microelectronics Reliability 138, 114765 2022
- Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect NanospectroscopyA Ranjan, FM Puglisi, J Molina-Reyes, P Pavan, SJ O’Shea, N Raghavan, ...ACS Applied Electronic Materials 4 (8), 3909-3921 2022
- Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defectsFL Aguirre, A Ranjan, N Raghavan, A Padovani, SM Pazos, N Vega, ...Applied Physics Express 14 (12), 121001 2021
- Dielectric breakdown in single-crystal hexagonal boron nitrideA Ranjan, N Raghavan, M Holwill, K Watanabe, T Taniguchi, ...ACS Applied Electronic Materials 3 (8), 3547-3554 2021
- Localized probing of dielectric breakdown in multilayer hexagonal boron nitrideA Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL PeyACS Applied Materials & Interfaces 12 (49), 55000-55010 2020
- Correlation of dielectric breakdown and nanoscale adhesion in silicon dioxide thin filmsA Ranjan, SJ O’Shea, M Bosman, J Molina, N Raghavan, KL Pey2020 IEEE International Reliability Physics Symposium (IRPS), 1-7 2020
- Random Telegraph Noise Nano-Spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy TechniquesA Ranjan, N Raghavan, K Shubhakar, SJ O’Shea, KL PeyNoise in Nanoscale Semiconductor Devices, 417-440 2020
- The interplay between drift and electrical measurement in conduction atomic force microscopyA Ranjan, KL Pey, SJ O'SheaReview of Scientific Instruments 90 (7), 073701 2019
- Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectricsA Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...IEEE Electron Device Letters 40 (8), 1321-1324 2019
- Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated MechanismsFL Aguirre, A Padovani, A Ranjan, N Raghavan, N Vega, N Mller, ...2019 IEEE International Reliability Physics Symposium (IRPS), 1-8 2019
- Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride — The Knowns and the UnknownsKL Pey, A Ranjan, N Raghavan, K Shubhakar, SJ O'Shea2019 IEEE International Reliability Physics Symposium (IRPS) 2019
- Sb2Te3 and Its Superlattices: Optimization by Statistical DesignJK Behera, X Zhou, A Ranjan, RE SimpsonACS applied materials & interfaces 10 (17), 15040-15050 2018
- Random telegraph noise in 2D hexagonal boron nitride dielectric filmsA Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...Applied Physics Letters 112 (13) 2018
- Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride FilmsA Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...Scientific Reports 8 (1) 2018