Aniruddha Basu

@colorado.edu

Research Associate
RASEI, University of Colorado Boulder

https://researchid.co/aniruddha2007

EDUCATION

CSIR-National Chemical Laboratory, Pune, India
M.Sc.: University of Delhi, New Delhi, India

RESEARCH INTERESTS

Materials Science, Organic Field Effect Transistors, Flexible Electronics

Scopus Publications

2150

Scholar Citations

Scholar h-index

Scholar i10-index

Scopus Publications

Effect of dopants in the HTL layer on photovoltaic properties in hybrid perovskite solar cells
R. H. Sardar, A. Bera, S. Chattopadhyay, J. C. Mahato, S. Sarraf, and A. K. Basu
Springer Science and Business Media LLC

Ultra-Narrowband Near-Infrared Responsive J-Aggregates of Fused Quinoidal Tetracyanoindacenodithiophene
Qiao He, Aniruddha Basu, Hyojung Cha, Matyas Daboczi, Julianna Panidi, Luxi Tan, Xiantao Hu, Chi Cheng Huang, Bowen Ding, Andrew J. P. White,et al.
Wiley
Narrowband photoresponsive molecules are highly coveted in high-resolution imaging, sensing and monochromatic photodetection, especially those extending into the near-infrared (NIR) spectral range. Here we report a new class of J-aggregating materials based on quinoidal indacenodithiophenes (IDT) which exhibit an ultra-narrowband (full width half maxima of 22 nm) NIR absorption peak centered at 770 nm. The spectral width is readily tuned by the length of the solubilising alkyl group, with longer chains resulting in significant spectral narrowing. The J-aggregate behaviour is confirmed by a combination of excited state lifetime measurements and single-crystal X-ray diffraction measurements. Their utility as electron transporting materials is demonstrated in both transistor and phototransistor devices, with the latter demonstrating good response at NIR wavelengths (780 nm) over a range of intensities. This article is protected by copyright. All rights reserved.

N-type polymer semiconductors incorporating heteroannulated benzothiadiazole
Xiantao Hu, Aniruddha Basu, Martina Rimmele, Adam V. Marsh, Filip Aniés, Qiao He, Thomas D. Anthopoulos, and Martin Heeney
Royal Society of Chemistry (RSC)
A series of four n-type semiconducting copolymers containing a 2,1,3-benzothiadiazole (BT) based acceptor annulated with a 2-(1,3-dithiol-2-ylidene)malonitrile group are synthesized and their optoelectronic properties investigated.

Doping-induced decomposition of organic semiconductors: a caveat to the use of Lewis acid p-dopants
Georgios Rotas, Giannis Antoniou, Paris Papagiorgis, Aniruddha Basu, Julianna Panidi, Petr Ufimkin, Leonidas Tsetseris, Grigorios Itskos, Martin Heeney, Georgios C. Vougioukalakis,et al.
Royal Society of Chemistry (RSC)
Tuning the electronic properties of organic semiconductors with Lewis acid reagents may go with chemical modifications of the semiconductor structure.

Generation of long-lived charges in organic semiconductor heterojunction nanoparticles for efficient photocatalytic hydrogen evolution
Jan Kosco, Soranyel Gonzalez-Carrero, Calvyn T. Howells, Teng Fei, Yifan Dong, Rachid Sougrat, George T. Harrison, Yuliar Firdaus, Rajendar Sheelamanthula, Balaji Purushothaman,et al.
Springer Science and Business Media LLC

Doping Approaches for Organic Semiconductors
Alberto D. Scaccabarozzi, Aniruddha Basu, Filip Aniés, Jian Liu, Osnat Zapata-Arteaga, Ross Warren, Yuliar Firdaus, Mohamad Insan Nugraha, Yuanbao Lin, Mariano Campoy-Quiles,et al.
American Chemical Society (ACS)
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

N-type polymer semiconductors incorporating para, meta, and ortho-carborane in the conjugated backbone
Filip Aniés, Zhuoran Qiao, Mohamad Insan Nugraha, Aniruddha Basu, Thomas D. Anthopoulos, Nicola Gasparini, and Martin Heeney
Elsevier BV

Y6 Organic Thin-Film Transistors with Electron Mobilities of 2.4 cm2 V−1 s−1 via Microstructural Tuning
Edgar Gutierrez‐Fernandez, Alberto D. Scaccabarozzi, Aniruddha Basu, Eduardo Solano, Thomas D. Anthopoulos, and Jaime Martín
Wiley
There is a growing demand to attain organic materials with high electron mobility, μe, as current reliable reported values are significantly lower than those exhibited by their hole mobility counterparts. Here, it is shown that a well‐known nonfullerene‐acceptor commonly used in organic solar cells, that is, BTP‐4F (aka Y6), enables solution‐processed organic thin‐film transistors (OTFT) with a μe as high as 2.4 cm2 V−1 s−1. This value is comparable to those of state‐of‐the‐art n‐type OTFTs, opening up a plethora of new possibilities for this class of materials in the field of organic electronics. Such efficient charge transport is linked to a readily achievable highly ordered crystalline phase, whose peculiar structural properties are thoroughly discussed. This work proves that structurally ordered nonfullerene acceptors can exhibit intrinsically high mobility and introduces a new approach in the quest of high μe organic materials, as well as new guidelines for future materials design.

Adduct-based p-doping of organic semiconductors
Nobuya Sakai, Ross Warren, Fengyu Zhang, Simantini Nayak, Junliang Liu, Sameer V. Kesava, Yen-Hung Lin, Himansu S. Biswal, Xin Lin, Chris Grovenor,et al.
Springer Science and Business Media LLC

The Effect of Alkyl Spacers on the Mixed Ionic-Electronic Conduction Properties of N-Type Polymers
Iuliana P. Maria, Bryan D. Paulsen, Achilleas Savva, David Ohayon, Ruiheng Wu, Rawad Hallani, Aniruddha Basu, Weiyuan Du, Thomas D. Anthopoulos, Sahika Inal,et al.
Wiley
Conjugated polymers with mixed ionic and electronic transport are essential for developing the complexity and function of electrochemical devices. Current n‐type materials have a narrow scope and low performance compared with their p‐type counterparts, requiring new molecular design strategies. This work presents two naphthalene diimide‐bithiophene (NDI‐T2) copolymers functionalized with hybrid alkyl‐glycol side chains, where the naphthalene diimide unit is segregated from the ethylene glycol (EG) units within the side chain by an alkyl spacer. Introduction of hydrophobic propyl and hexyl spacers is investigated as a strategy to minimize detrimental swelling close to the conjugated backbone and balance the mixed conduction properties of n‐type materials in aqueous electrolytes. It is found that both polymers functionalized with alkyl spacers outperform their analogue bearing EG‐only side chains in organic electrochemical transistors (OECTs). The presence of the alkyl spacers also leads to remarkable stability in OECTs, with no decrease in the ON current after 2 h of operation. Through this versatile side chain modification, this work provides a greater understanding of the structure‐property relationships required for n‐type OECT materials operating in aqueous media.

The influence of alkyl group regiochemistry and backbone fluorination on the packing and transistor performance of: N -cyanoimine functionalised indacenodithiophenes
Thomas Hodsden, Karl J. Thorley, Aniruddha Basu, Andrew J. P. White, Changsheng Wang, William Mitchell, Florian Glöcklhofer, Thomas D. Anthopoulos, and Martin Heeney
Royal Society of Chemistry (RSC)
The influence of backbone fluorination and sidechain regiochemistry on an indacendithiophene (IDT) core containing electron withdrawing N-cyanoimine groups is investigated.

Laser patterning of boron carbon nitride electrodes for flexible micro-supercapacitor with remarkable electrochemical stability/capacity
Indrapal Karbhal, Aniruddha Basu, Apurva Patrike, and Manjusha V. Shelke
Elsevier BV

Long-range exciton diffusion in molecular non-fullerene acceptors
Yuliar Firdaus, Vincent M. Le Corre, Safakath Karuthedath, Wenlan Liu, Anastasia Markina, Wentao Huang, Shirsopratim Chattopadhyay, Masrur Morshed Nahid, Mohamad I. Nugraha, Yuanbao Lin,et al.
Springer Science and Business Media LLC
AbstractThe short exciton diffusion length associated with most classical organic semiconductors used in organic photovoltaics (5-20 nm) imposes severe limits on the maximum size of the donor and acceptor domains within the photoactive layer of the cell. Identifying materials that are able to transport excitons over longer distances can help advancing our understanding and lead to solar cells with higher efficiency. Here, we measure the exciton diffusion length in a wide range of nonfullerene acceptor molecules using two different experimental techniques based on photocurrent and ultrafast spectroscopy measurements. The acceptors exhibit balanced ambipolar charge transport and surprisingly long exciton diffusion lengths in the range of 20 to 47 nm. With the aid of quantum-chemical calculations, we are able to rationalize the exciton dynamics and draw basic chemical design rules, particularly on the importance of the end-group substituent on the crystal packing of nonfullerene acceptors.

Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors
Aniruddha Basu, Muhammad Rizwan Niazi, Alberto D. Scaccabarozzi, Hendrik Faber, Zuping Fei, Dalaver H Anjum, Alexandra F. Paterson, Olga Boltalina, Martin Heeney, and Thomas D. Anthopoulos
Royal Society of Chemistry (RSC)
Blade-coating is used to fabricate high hole mobility organic transistors based on a p-doped small-molecule:polymer blend semiconductor.

Understanding Charge Transport in High-Mobility p-Doped Multicomponent Blend Organic Transistors
Alberto D. Scaccabarozzi, Francesca Scuratti, Alex J. Barker, Aniruddha Basu, Alexandra F. Paterson, Zhuping Fei, Olga Solomeshch, Annamaria Petrozza, Nir Tessler, Martin Heeney,et al.
Wiley
The use of ternary systems comprising polymers, small molecules, and molecular dopants represents a promising approach for the development of high‐mobility, solution‐processed organic transistors. However, the current understanding of the charge transport in these complex systems, and particularly the role of molecular doping, is rather limited. Here, the role of the individual components in enhancing hole transport in the best‐performing ternary blend systems comprising the small molecule 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT), the conjugated polymer indacenodithiophene‐alt‐benzothiadiazole (C16IDT‐BT), and the molecular p‐type dopant (C60F48) is investigated. Temperature‐dependent charge transport measurements reveal different charge transport regimes depending on the blend composition, crossing from a thermally activated to a band‐like behavior. Using the charge‐modulation spectroscopy technique, it is shown that in the case of the pristine blend, holes relax onto the conjugated polymer phase where shallow traps dominate carrier transport. Addition of a small amount of C60F48 deactivates those shallow traps allowing for a higher degree of hole delocalization within the highly crystalline C8‐BTBT domains located on the upper surface of the blend film. Such synergistic effect of a highly ordered C8‐BTBT phase, a polymer bridging grain boundaries, and p‐doping results in the exceptionally high hole mobilities and band‐like transport observed in this blend system.

Core Fluorination Enhances Solubility and Ambient Stability of an IDT-Based n-Type Semiconductor in Transistor Devices
Thomas Hodsden, Karl J. Thorley, Julianna Panidi, Aniruddha Basu, Adam V. Marsh, Haojie Dai, Andrew J. P. White, Changsheng Wang, William Mitchell, Florian Glöcklhofer,et al.
Wiley
The synthesis of a novel fluorinated n‐type small molecule based on an indacenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improvement in solubility, in addition to effectively stabilizing the lowest‐unoccupied molecular orbital energy (−4.24 eV). Single‐crystal analysis and density functional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron‐withdrawing dicyanomethylene group. Organic thin‐film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.

Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions
Manasvi Kumar, Dimitra G. Georgiadou, Akmaral Seitkhan, Kalaivanan Loganathan, Emre Yengel, Hendrik Faber, Dipti Naphade, Aniruddha Basu, Thomas D. Anthopoulos, and Kamal Asadi
Wiley
Ferroelectric tunnel junctions (FTJs) are ideal resistance‐switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current‐voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography‐based device fabrication method that would allow for their mass production. Co‐planar FTJs that are fabricated using wafer‐scale adhesion lithography technique are demonstrated, and a bi‐stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], and employ asymmetric co‐planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography‐based nano‐patterning technique and could pave the way to new and exciting memory device concepts.

Addition of the Lewis Acid Zn(C<inf>6</inf>F<inf>5</inf>)<inf>2</inf> Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1
Alexandra F. Paterson, Leonidas Tsetseris, Ruipeng Li, Aniruddha Basu, Hendrik Faber, Abdul‐Hamid Emwas, Julianna Panidi, Zhuping Fei, Muhammad R. Niazi, Dalaver H. Anjum,et al.
Wiley
Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6F5)3] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light‐emitting diodes, solar cells, and organic thin‐film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6F5)3 with the latter serving as the prototypical air‐stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an alternative Lewis acid additive in high‐hole‐mobility OTFTs based on small‐molecule:polymer blends comprising 2,7‐dioctyl[1]benzothieno [3,2‐b][1]benzothiophene and indacenodithiophene–benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6F5)2 acts simultaneously as a p‐dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V−1 s−1. The work not only highlights Zn(C6F5)2 as a promising new additive for next‐generation optoelectronic devices, but also opens up new avenues in the search for high‐mobility organic semiconductors.

Single crystal hybrid perovskite field-effect transistors
Weili Yu, Feng Li, Liyang Yu, Muhammad R. Niazi, Yuting Zou, Daniel Corzo, Aniruddha Basu, Chun Ma, Sukumar Dey, Max L. Tietze,et al.
Springer Science and Business Media LLC

F-Doped carbon nano-onion films as scaffold for highly efficient and stable Li metal anodes: A novel laser direct-write process
Dhanya Puthusseri, Malik Wahid, Aniruddha Basu, Rohit Babar, Mukul Kabir, and Satishchandra Ogale
Royal Society of Chemistry (RSC)
Direct writing of a fluorine-doped curved carbon nano-onion film on a Cu foil renders the Li metal anode with long cycle life, high Li-plating capacity, low-voltage hysteresis, and improved high current performance.

Flex-Mode Mechatronic Functionality of Lead Iodide Hybrid Perovskite Systems
Aniruddha Basu, Prachi Kour, Swati Parmar, Rounak Naphade, and Satishchandra Ogale
American Chemical Society (ACS)
The mechatronic functionality of lead iodide hybrid perovskite thin films grown on the flexible substrate is investigated via the study of current-perpendicular-to-plane charge transport modulation under flex-mode compressive and tensile strains (CS and TS) for multiple flexing cycles. It is shown that the transport is significantly, reversibly, and asymmetrically modulated. Typically, for a strain of 0.088% (0.23%), a remarkable current modulation of +196% (+393%) is achieved for compressive strain and −49% (−53%) for tensile strain at an applied potential of 1 V. For low levels of bending, the response is robust for a large number of bending cycles. The effects of the change of organic cation from methylammonium to formamidinium and the grain size on the response are also examined. A comparative study of the structural, morphological, and optical properties of the pristine sample and the samples subjected to multiple bending cycles is performed to understand and elucidate the possible mechanisms of the ...

CO<inf>2</inf> laser direct written MOF-based metal-decorated and heteroatom-doped porous graphene for flexible all-solid-state microsupercapacitor with extremely high cycling stability
Aniruddha Basu, Kingshuk Roy, Neha Sharma, Shyamapada Nandi, Ramanathan Vaidhyanathan, Sunit Rane, Chandrashekhar Rode, and Satishchandra Ogale
American Chemical Society (ACS)
Over the past decade, flexible and wearable microelectronic devices and systems have gained significant importance. Because portable power source is an essential need of such wearable devices, currently there is considerable research emphasis on the development of planar interdigitated micro energy -torage devices by employing diverse precursor materials to obtain functional materials (functional carbon, oxides, etc.) with the desirable set of properties. Herein we report for the first time the use of metal organic framework (MOF) and zeolitic imidazolate framework (ZIF-67) for high-wavelength photothermal laser direct writing of metal-decorated, heteroatom-doped, porous few-layer graphene electrodes for microsupercapacitor application. We argue that the specific attributes of MOF as a precursor and the high-wavelength laser writing approach (which creates extremely high localized and transient temperature (>2500 °C) due to strong absorption by lattice vibrations) are together responsible for the peculiar interesting properties of the carbon material thus synthesized, thereby rendering extremely high cycling stability to the corresponding microsupercapacitor device. Our device exhibits near 100% retention after 200 000 cycles as well as stability under 150° bending.

A Robust Highly Flexible All–solid–state Micro Pseudocapacitor Based on Ternary Oxide CuCo<inf>2</inf>O<inf>4</inf> having Ultrathin Porous Nanowall Type Morphology Blended with CNT
Aniruddha Basu, Monika Bhardwaj, Yogesh Gawli, Chandrasekhar Rode, and Satishchandra Ogale
Wiley
In this work we demonstrate a facile approach to the fabrication of all solid state flexible interdigitated micro pseudocapacitor device using pre-synthesized CuCo2O4 (CCO) ternary metal oxide as the electrode material. The hydrothermally synthesized CCO exhibits a peculiar 3D interconnected aligned porous nanowall type morphology which is highly desirable for storage as well as charge transfer. The device is fabricated using CO2 laser scribing technique and the PVA-H3PO4 gel electrolyte is used as the electrolyte. The as-synthesized CCO as well as its blend with 10 wt.% CNT are examined for the electrochemical performance. CNT blending is shown to reduce the charge transfer resistance dramatically, thereby enhancing the pseudo capacitance. The areal capacitance of 2.29 mF cm−2 is obtained from the solid state device. Moreover, the CCO-CNT electrode also shows a high stability upto 9000 cycles without a sign of further decay. Importantly, the devices also retain over 65 % of their initial capacitance after 1000 large angle (60°) bending cycles and 93 % of the initial capacitance under 120° bending condition, thanks to the mechanical flexibility afforded by CNTs without disrupting conducting paths.

Highly Stable Laser-Scribed Flexible Planar Microsupercapacitor Using Mushroom Derived Carbon Electrodes
Poonam Yadav, Aniruddha Basu, Anil Suryawanshi, Onkar Game, and Satishchandra Ogale
Wiley
A report is presented on the fabrication of all solid‐state interdigitated flexible microsupercapacitor using ultrafast and highly scalable laser scribing technique, using highly mesoporous carbon synthesized from biomass (mushroom) with hydrothermal preprocessing. The specific protocol used for carbon synthesis renders some unique property features to the material (surface area of 2604 m² g−1 with hierarchical pore size distribution) in the context of supercapacitor electrode application. A polyvinyl alcohol (PVA)‐H2SO4 gel electrolyte is used for electrochemical measurements. The microsupercapacitor shows high cyclic stability up to 15000 cycles. Moreover it shows nearly 90% stability after 1000 bending cycles at 60° angle. It also retains its performance even under 120° bending condition. This work represents a facile and fast technique for microscaled device fabrication that can be easily commercialized. Moreover, the mushroom‐derived carbon used to make the electrodes holds great promise in context of the stability and flexibility of flexible supercapacitors.

Starch (Tapioca) to carbon dots: An efficient green approach to an on-off-on photoluminescence probe for fluoride ion sensing
Aniruddha Basu, Anil Suryawanshi, Begraj Kumawat, Anshu Dandia, Debanjan Guin, and Satishchandra B. Ogale
Royal Society of Chemistry (RSC)
Photoluminescent carbon dots are synthesized from starch (Tapioca) and are shown to work effectively as anion-selective fluoride ion probes based on Fe3+ induced photoluminescence quenching and F− induced recovery.

RECENT SCHOLAR PUBLICATIONS

The Excited-State Lifetime of Poly (NDI2OD-T2) Is Intrinsically Short
MK Gish, CD Karunasena, JM Carr, WP Kopcha, AL Greenaway, ...
The Journal of Physical Chemistry C 128 (15), 6392-6400 2024

Ultra‐Narrowband Near‐Infrared Responsive J‐Aggregates of Fused Quinoidal Tetracyanoindacenodithiophene
Q He, A Basu, H Cha, M Daboczi, J Panidi, L Tan, X Hu, CC Huang, ...
Advanced Materials 35 (11), 2209800 2023

N-type polymer semiconductors incorporating heteroannulated benzothiadiazole
X Hu, A Basu, M Rimmele, AV Marsh, F Anis, Q He, TD Anthopoulos, ...
Polymer Chemistry 14 (4), 469-476 2023

Generation of long-lived charges in organic semiconductor heterojunction nanoparticles for efficient photocatalytic hydrogen evolution
J Kosco, S Gonzalez-Carrero, CT Howells, T Fei, Y Dong, R Sougrat, ...
Nature Energy 7 (4), 340-351 2022

N-type polymer semiconductors incorporating para, meta, and ortho-carborane in the conjugated backbone
F Anis, Z Qiao, MI Nugraha, A Basu, TD Anthopoulos, N Gasparini, ...
Polymer 240, 124481 2022

Doping-induced decomposition of organic semiconductors: a caveat to the use of Lewis acid p-dopants
G Rotas, G Antoniou, P Papagiorgis, A Basu, J Panidi, P Ufimkin, ...
Journal of Materials Chemistry C 10 (35), 12751-12764 2022

Y6 Organic Thin‐Film Transistors with Electron Mobilities of 2.4 cm² V⁻¹ s⁻¹ via Microstructural Tuning
E Gutierrez‐Fernandez, AD Scaccabarozzi, A Basu, E Solano, ...
Advanced Science 9 (1), 2104977 2022

Doping Approaches for Organic Semiconductors
AD Scaccabarozzi^, A Basu^, (^equal contribution), F Anis, J Liu, ...
Chemical Reviews 122 (4), 4420–4492 2021

Adduct-based p-doping of organic semiconductors
N Sakai, R Warren, F Zhang, S Nayak, J Liu, SV Kesava, YH Lin, ...
Nature Materials 20 (9), 1248-1254 2021

The effect of alkyl spacers on the mixed ionic‐electronic conduction properties of n‐type polymers
IP Maria, BD Paulsen, A Savva, D Ohayon, R Wu, R Hallani, A Basu, ...
Advanced Functional Materials 31 (14), 2008718 2021

The influence of alkyl group regiochemistry and backbone fluorination on the packing and transistor performance of N-cyanoimine functionalised indacenodithiophenes
T Hodsden, KJ Thorley, A Basu, AJP White, C Wang, W Mitchell, ...
Materials Advances 2 (5), 1706-1714 2021

Long-range exciton diffusion in molecular non-fullerene acceptors
Y Firdaus, VM Le Corre, S Karuthedath, W Liu, A Markina, W Huang, ...
Nature communications 11 (1), 5220 2020

Laser Patterning of Boron Carbon Nitride Electrodes for Flexible Micro-Supercapacitor with Remarkable Electrochemical Stability/Capacity
I Karbhal, A Basu, A Patrike, MV Shelke
Carbon 171, 750-757 2020

Understanding Charge Transport in High‐Mobility p‐Doped Multicomponent Blend Organic Transistors
AD Scaccabarozzi, F Scuratti, AJ Barker, A Basu, AF Paterson, Z Fei, ...
Advanced Electronic Materials, 2000539 2020

Impact of p-type doping on charge transport in blade-coated small-molecule: polymer blend transistors
A Basu*, MR Niazi, AD Scaccabarozzi, H Faber, Z Fei, DH Anjum, ...
Journal of Materials Chemistry C 8 (43), 15368-15376 2020

Core Fluorination Enhances Solubility and Ambient Stability of an IDT‐Based n‐Type Semiconductor in Transistor Devices
T Hodsden, KJ Thorley, J Panidi, A Basu, AV Marsh, H Dai, AJP White, ...
Advanced Functional Materials 30 (17), 2000325 2020

Addition of the Lewis Acid Zn (C6F5) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V− 1 s− 1
AF Paterson, L Tsetseris, R Li, A Basu, H Faber, AH Emwas, J Panidi, ...
Advanced Materials 31 (27), 1900871 2019

Colossal Tunneling Electroresistance in Co‐Planar Polymer Ferroelectric Tunnel Junctions
M Kumar, DG Georgiadou, A Seitkhan, K Loganathan, E Yengel, H Faber, ...
Advanced Electronic Materials, 1901091 2019

Single crystal hybrid perovskite field-effect transistors
W Yu, F Li, L Yu, MR Niazi, Y Zou, D Corzo, A Basu, C Ma, S Dey, ...
Nature communications 9 (1), 5354 2018

F-Doped carbon nano-onion films as scaffold for highly efficient and stable Li metal anodes: a novel laser direct-write process
D Puthusseri, M Wahid, A Basu, R Babar, M Kabir, S Ogale
Nanoscale 10 (16), 7630-7638 2018

MOST CITED SCHOLAR PUBLICATIONS

Single crystal hybrid perovskite field-effect transistors
W Yu, F Li, L Yu, MR Niazi, Y Zou, D Corzo, A Basu, C Ma, S Dey, ...
Nature communications 9 (1), 5354 2018
Citations: 401

Long-range exciton diffusion in molecular non-fullerene acceptors
Y Firdaus, VM Le Corre, S Karuthedath, W Liu, A Markina, W Huang, ...
Nature communications 11 (1), 5220 2020
Citations: 311

Doping Approaches for Organic Semiconductors
AD Scaccabarozzi^, A Basu^, (^equal contribution), F Anis, J Liu, ...
Chemical Reviews 122 (4), 4420–4492 2021
Citations: 295

Starch (Tapioca) to carbon dots: an efficient green approach to an on–off–on photoluminescence probe for fluoride ion sensing
A Basu, A Suryawanshi, B Kumawat, A Dandia, D Guin, SB Ogale
Analyst 140 (6), 1837-1841 2015
Citations: 89

CO₂ Laser Direct Written MOF-Based Metal-Decorated and Heteroatom-Doped Porous Graphene for Flexible All-Solid-State Microsupercapacitor with Extremely
A Basu, K Roy, N Sharma, S Nandi, R Vaidhyanathan, S Rane, C Rode, ...
ACS applied materials & interfaces 8 (46), 31841-31848 2016
Citations: 85

Highly Stable Laser‐Scribed Flexible Planar Microsupercapacitor Using Mushroom Derived Carbon Electrodes
P Yadav^, A Basu^, (^equal contribution), A Suryawanshi, O Game, ...
Advanced Materials Interfaces 3 (11), 1600057 2016
Citations: 79

Adduct-based p-doping of organic semiconductors
N Sakai, R Warren, F Zhang, S Nayak, J Liu, SV Kesava, YH Lin, ...
Nature Materials 20 (9), 1248-1254 2021
Citations: 63

Evaluation of n-type ternary metal oxide NiMn2O4 nanomaterial for humidity sensing
Y Gawli, S Badadhe, A Basu, D Guin, MV Shelke, S Ogale
Sensors and Actuators B: Chemical 191, 837-843 2014
Citations: 47

Catalyst free novel synthesis of graphene and its application in high current OFET and phototransistor based on P3HT/G composite
P Yadav, C Chanmal, A Basu, L Mandal, J Jog, S Ogale
RSC Advances 3 (39), 18049-18054 2013
Citations: 22