Maksym Kohdas

@kdu.edu.ua

Candidate of Technical Sciences
Kremenchuk Mychailo Ostrohdskyi National University

Maksym Kohdas


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https://researchid.co/arafrael

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, General Materials Science, Control and Optimization
16

Scopus Publications

111

Scholar Citations

7

Scholar h-index

4

Scholar i10-index

Scopus Publications

  • Multisensor System Based on Porous Silicon with Multiagent Data Processing
    , S. E. Pritchin, I. V. Shevchenko, , A. P. Oksanich, , M. G. Kogdas, , Y. A. Rastoropov, , О. S. Prytchyn, , V. A. Palagin, and
    Journal of Nano and Electronic Physics, 2025
    Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)
  • STUDY OF ADSORPTION OF HOUSEHOLD GAS MOLECULES ON ELECTROPHYSICAL PROPERTIES OF POROUS SILICON
    Maksym Kogdas
    Innovative Technologies and Scientific Solutions for Industries, 2024
    Purpose. This research comprehensively investigates the adsorption of household gas molecules on porous silicon surfaces and its impact on the electrophysical properties of the material. The primary aim is to understand how the adsorption process influences the electrical conductivity and capacitance of porous silicon. Methodology. The study employs various electrophysical analysis methods to measure changes in the material's conductivity and capacitance caused by gas adsorption. Furthermore, the research explores optimal conditions for detecting household gas and establishes the correlation between the degree of adsorption and alterations in electrophysical parameters. Originality. The research contributes novelty by not only revealing increased conductivity due to adsorption but also significant changes in capacitance, providing a foundation for developing efficient gas sensors. Additionally, the article discusses the potential applications of porous silicon in developing novel materials for gas sensors to detect various airborne pollutants. Results. In addition to the previously mentioned findings, the article highlights the results of experiments studying the influence of different concentrations of household gas on the electrophysical characteristics of porous silicon. This insight refines optimal parameters for the effective detection of gas pollutants. The research also discusses the applicability of the results in producing environmentally friendly and highly efficient sensor systems. Practical Value. The obtained conclusions deepen our understanding of the interaction between porous silicon and household gas, crucial for advancing gas sensor technologies. The study opens broad possibilities for applying porous silicon in highly sensitive and reliable gas sensors for diverse practical applications, including safety monitoring and air quality control in industrial and domestic settings. The practical implications extend to the development of real-time, eco-friendly sensor systems.
  • Study of Adsorption of Porous Silicon to Methane and Hydrogen
    Anatoliy Oksanych, Serhey Prytchyn, Maksim Kohdas, Oleksiy Prytchyn, Vyacheslav Sytnik, Oksana Donskykh
    Proceedings IEEE International Conference on Electronics and Nanotechnology Elnano, 2024
    The study presented by the authors analysed the sensitivity of porous semiconductors to gases. The results showed that the addition of catalyst metals Ni and Pd to the porous layer significantly increased the sensitivity of PS-based structures to methane (CH4) and hydrogen (H2) molecules. Specifically, Ni nanoclusters were found to increase the sensitivity to CH4, while Pd increased the sensitivity to H2. The experimental structures are capable of detecting CH4 and H2 even in the presence of atmospheric air due to their lower minimum detection temperature in comparison to existing semiconductor sensors. The sensitivity of the Me/PS-Ni(Pd)/Si structures to H2 and NH4 was investigated, and the results showed a sensitivity of 1.67 to NH4 and 1.75 to H2.
  • Research of the Mechanism of Formation of a Pulsed Magnetic Field of High Intensity and Development of a Device for Therapy
    Mykhaylo Zagirnyak, Anatolii Oksanich, Sergiy Pritchin, Maksym Kogdas, Alyona Nikitina, Oleksiy Prytchyn
    Proceedings IEEE International Conference on Electronics and Nanotechnology Elnano, 2024
    The use of pulsed electromagnetic fields (PEMF) is considered a safe and effective method of treating various health problems. This method has been successfully used to promote fracture healing, alleviate mental depression, and reduce chronic pain and inflammation that are common in today's society. Currently, clinical experiments are being conducted in the world in order to better understand the mechanisms of its action and to determine the optimal parameters of use in specific pathologies, including acceleration of wound healing. The schematic model of the inductor operation has been studied, and its parameters have been determined. The proposed block diagram of the PEMF therapy device and the technical parameters of the device under development have been given. A device that meets the requirements for a PEMF therapy device has been developed and manufactured. The device can work in six modes of operation and generate paired bipolar magnetic pulses with an amplitude in the range from 0.2 to 1.2 T. Developed software allows setting the time of the treatment procedure. The device has passed clinical tests and has received a certificate of conformity as a device for medical purposes.
  • Analysis of the photoluminescence degradation of porous silicon layers
    A. P. Oksanich, S. E. Pritchin, M. G. Kogdas, V. P. Boichuk
    Proceedings of the 5th International Conference on Modern Electrical and Energy System Mees 2023, 2023
    In this paper, we present methods for the preparation of phosphorylated porous silicon structures that do not degrade in air over time. The best results that meet the purpose of this work were obtained on a PS sample prepared in an electrochemical solution with the addition of HCl. The addition of HCl to the standard electrolyte promotes the formation of stoichiometric SiO2 oxide on the PSi surface. The addition of FeCl3 to the electrolyte leads to the formation of a stable iron compound on the PSi surface, which stabilizes its photoluminescent properties. Low-temperature annealing of the sample also leads to stabilization of the PSi’s PL properties, but the main disadvantage of this method is the formation of nonelemental silica SiOx on the PS surface, which leads to the quenching of the PL of PSi.
  • Method for Improving the Quality of Porous Gallium Arsenide Wafer for Anti-Reflecting Coating of Solar Cells
    Anatoliy Oksanich, Serhey Pritchin, Maksym Kogdas, Andriy Nekrasov
    Proceedings of the 2022 IEEE 4th International Conference on Modern Electrical and Energy System Mees 2022, 2022
    The authors proposed a way to increase the efficiency of solar cells based on gallium arsenide. The method is based on the formation of a porous layer on the surface of the solar cell to create an anti-reflective effect. The paper examines the influence of such parameters of the porous layer as the uniformity and size of the crystallites on the percentage of light reflection. A method of forming a porous wafer by anodizing with a pulsed current is proposed, the duty cycle of which consists of the time of turning on the current and the time of turning it off. During experimental studies, it was established that the structure of the layer depends mainly on the time of turning on the anodizing current during the work cycle. Pulse anodizing creates a bimodal effect in the crystal size distribution. The paper presents the photoluminescence spectra of samples obtained both during anodization with pulsed current and during anodization with direct current. The dependence of the percentage of light reflection on the parameters of the porous wafer was investigated. It is shown that the reflection is affected by the uniformity of the wafer and the size of the crystallites. The lowest percentage of reflection, which is equal to 4% at a light wavelength of 550 nm, was obtained with the following parameters of an anodizing pulse current: an anodizing current on time of 100 ms, and a current off time of 40 ms.
  • Development of a Method of Increasing the Sensitivity of Gas Sensors
    M.G. Kogdas, O.V. Donskykh, V.Yu. Sytnik, V.I. Bahno
    Proceedings of the 2022 IEEE 4th International Conference on Modern Electrical and Energy System Mees 2022, 2022
    In this paper, the frequency dependences of the capacitance of the multilayer structure of matrix sensors with thick layers of porous semiconductor in vacuum and gas medium (hydrogen, carbon dioxide) are studied, it is determined that in vacuum the capacitance changes little with frequency variation. When the sensor is moved to the environment of H2 or CO2 with a concentration of 100 to 10000ppm C(f), the characteristics of the matrix sensor shift towards high capacitance values, and with increasing concentration, the capacitance is weakly dependent on frequency in the low frequency region and changes significantly at 103 Hz. The higher the concentration, the more high-frequency region shifts the area of sharp increase in capacitance. A method of processing signals from porous matrix sensors is also proposed, which is characterized by the use of polyharmonic power supply with a tuned set of frequencies, which allows to reduce the capacitance of the measured structure to the capacitance of the porous semiconductor layer and directly measure the dielectric constant of the porous layer. An important feature of the method is the use of a wide range of frequencies (102–106 Hz), at which the change in C(w), due to adsorption of gases, and takes into account only slow processes of current transfer in the gas-sensitive semiconductor material, which determines the corresponding change in the elements of the equivalent electrical circuit, including CPE.
  • Luminescent Properties of Electrochemically Etched Gallium Arsenide
    , I. V. Gavrilchenko, Y. S. Milovanov, , I. I. Ivanov, , A. N. Zaderko, , A. P. Oksanich, , S. E. Pritchin, , M. G. Kogdas, , M. I. Fedorchenko, , S. N. Goysa, , V. A. Skryshevsky, and
    Journal of Nano and Electronic Physics, 2021
    Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)
  • Infrared Spectroscopy of Porous Silicon
    M.G. Kogdas, M.A. Maschenko, A.G. Kholod, M.G. Dernova
    Proceedings IEEE International Conference on Electronics and Nanotechnology Elnano, 2020
    The paper deals with the study of the effect of the morphology and structure of crystallites of pSi layer. The porous layer was obtained by electrochemical anodization at anodizing current from10 to 60 mA and anodizing time from 5 to 30 minutes. The porous layer surface was studied with optical microscopy, and the crystallite structure was examined with FTIR technique. It has been discovered that the anodization modes have a direct effect on the deformation vibrations of the SiH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> group in the IR radiation propagation numbers from 700 to 950 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . At the boundaries of the crystallites compressing stresses arise causing a decrease in SiOSi bond in wave-numbers from 1060 to 1160 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . It has been demonstrated the increasing effect of SiH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</sub> stretching bonds and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> complexes (absorption peaks 2116 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> and 2340 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> respectively). Due to combined calculation of free charge carriers concentration from the IR transmission spectra and electrical conductivity of porous silicon, the mobility of majority charge carriers is obtained. For p-type porous silicon, the conductivity mobility is μh=2.9×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V×s, and for n-type porous silicon - μe=1.1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V×s.
  • GaAs Porous Films Electroetching Improvement by Using a Fuzzy Controller
    A.P. Oksanich, S.E. Pritchin, M.G. Kogdas, M.G. Dernova
    Proceedings of the 2019 IEEE 9th International Conference on Nanomaterials Applications and Properties Nap 2019, 2019
    GaAs: Sn - GaAs: Si structures with a porous layer obtained by n-GaAs: Si electroetching in HF: H2O of different proportions have been studied. The etching was controlled with a fuzzy controller which took into account the acid concentration, ambient temperature, output voltage and current. The influence of the porous layer morphology on the emission spectrum was investigated by the method of photoluminescence. The fuzzy controller allowed receiving porous films with maximum uniformity of porosity.
  • Pd/Porous GaAs in the Manufacture of Schottky Diodes
    A.P. Oksanich, S.E. Pritchin, M.G. Kogdas, A.G. Kholod, M.G. Dernova
    Proceedings of the International Conference on Modern Electrical and Energy Systems Mees 2019, 2019
  • Electrical Properties of Metal-Porous GaAs Structure at Water Adsorption
    Yurii Milovanov, Valeriy Skryshevsky, Iryna Gavrilchenko, Anatoliy Oksanich, Sergiy Pritchin, Maksym Kogdas
    Journal of Electronic Materials, 2019
  • Effect of porous GaAs layer morphology on Pd/porous GaAs Schottky contact
    , A. P. Oksanich, S. E. Pritchin, , M. G. Kogdas, , A. G. Kholod, , I. V. Shevchenko, and
    Journal of Nano and Electronic Physics, 2019
  • Using impedance porous GaAs-based for biomedical gas sensor
    A.P. Oksanich, S.E. Pritchin, M.G. Kogdas, A.G. Holod, Y.S. Milovanov, I.V. Gavrilchenko
    Proceedings of the 2017 IEEE 7th International Conference on Nanomaterials Applications and Properties Nap 2017, 2017
  • Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
    N. I. Klyui, V. B. Lozinskii, A. I. Liptuga, V. N. Dikusha, A. P. Oksanych, M. G. Kogdas’, A. L. Perekhrest, S. E. Pritchin
    Semiconductors, 2017
  • Influence of gas adsorption on the impedance of porous GaAs
    Y.S. Milovanov and
    Functional Materials, 2017

RECENT SCHOLAR PUBLICATIONS

  • AUTOMATED COMPLEX FOR CONTROLLING THE ELASTIC PROPERTIES OF SEMICONDUCTOR WAVES FOR FORMING SENSOR STRUCTURES ON A POROUS LAYER
    BVІ Kohdas M. H., Nabyvach О. А., Sytnyk V. Yu.
    ESMO-2025 , 2025
    2025
  • Multisensor System Based on Porous Silicon with Multiagent Data Processing
    SE Pritchin, IV Shevchenko, AP Oksanich, MG Kogdas, YA Rastoropov, ...
    Sumy State University , 2025
    2025
  • Research of the Mechanism of Formation of a Pulsed Magnetic Field of High Intensity and Development of a Device for Therapy
    M Zagirnyak, A Oksanich, S Pritchin, M Kogdas, A Nikitina, O Prytchyn
    2024 IEEE 42nd International Conference on Electronics and Nanotechnology … , 2024
    2024
  • Дослідження адсорбції молекул побутового газу на електрофізичні властивості поруватого кремнію
    M Kogdas
    INNOVATIVE TECHNOLOGIES AND SCIENTIFIC SOLUTIONS FOR INDUSTRIES, 246-255 , 2024
    2024
  • THE AUTOMATED SYSTEM CONTROLS THE ELASTIC PROPERTIES OF SEMICONDUCTOR WAFERS, ENABLING THE FORMATION OF SENSOR STRUCTURES ON A POROUS LAYER
    M KOGDAS
    ЕЛЕКТРОМЕХАНIЧНI I ЕНЕРГОЗБЕРIГАЮЧI СИСТЕМИ 65 (2), 41-46 , 2024
    2024
  • AN AUTOMATED SYSTEM FOR THE ANALYSIS OF FLUORESCENCE IN THE VAPOUR PHASE OF EXPLOSIVES IN AIR
    M KOGDAS, V SYTNIK, O DONSKIKH, V MARCHENKO, K PETROVА
    ЕЛЕКТРОМЕХАНIЧНI I ЕНЕРГОЗБЕРIГАЮЧI СИСТЕМИ 64 (1), 8-16 , 2024
    2024
  • Автоматизація процесу визначення пружніх властивостей пластин напівпровідників для формування сенсорних структур на поруватому шарі
    НОА Когдась М. Г.
    IІI Всеукраїнська науково-практична конференція молодих вчених і студентів … , 2024
    2024
  • Модель взаємодії поруватих напівпровідників з пружніми постійними
    УМО Когдась М. Г., Ситнік В. Ю.
    IІI Всеукраїнська науково-практична конференція молодих вчених і студентів … , 2024
    2024
  • Математична модель взаємозв'язку структури поруватого кремнія і модуля Юнга
    ДОВ Палагін В. А., Когдась М. Г., Ситнік В. Ю.
    Вчені записки ТНУ імені В.І. Вернадського. Серія: Технічні науки 35 (5), 140-147 , 2024
    2024
  • Автоматизований комплекс контролю пружніх властивостей пластин напівпровідників для формування сенсорних структур на поруватому шарі
    К М.
    Електромеханічні і енергозберігаючі системи 2, 41-46 , 2024
    2024
  • Study of Adsorption of Porous Silicon to Methane and Hydrogen
    DO Oksanych A., Prytchyn S., Kohdas M., Prytchyn O., Sytnik V.
    42nd IEEE International Conference on Electronics and Nanotechnology (ELNANO … , 2024
    2024
    Citations: 1
  • Автоматизований комплекс флуоресцентного аналізу парів вибухових речовин у повітрі
    ПК Когдась М., Ситнік В., Донських О., Марченко В.
    Електромеханічні і енергозберігаючі системи 1 (64), 8-16 , 2024
    2024
  • Удосконалення моделі механізму утворення поруватого шару р-Si
    ЛАІ Когдась М. Г., Притчин С. Е., Палагін В. А., Оксанич А. П., Драгобецький ...
    Вчені записки ТНУ імені В.І. Вернадського. Серія: Технічні науки. 35, 216-223 , 2024
    2024
  • Analysis of the photoluminescence degradation of porous silicon layers
    AP Oksanich, SE Pritchin, MG Kogdas, VP Boichuk
    2023 IEEE 5th International Conference on Modern Electrical and Energy … , 2023
    2023
  • Від 3д-моделювання до 3д-друку
    МГ Когдась, АС Когдась
    ІНЖЕНЕРНІ ТА ОСВІТНІ ТЕХНОЛОГІЇ, 66 , 2023
    2023
  • УДОСКОНАЛЕННЯ МАТЕМАТИЧНОЇ МОДЕЛІ ВЗАЄМОДІЇ ГАЗОВИХ СУМІШЕЙ ІЗ ПОРУВАТИМИ ПЛІВКАМИ ДЛЯ СЕНСОРІВ ГАЗУ
    МКСПВПВБВ Ситнік
    Вісник КрНУ імені Михайла Остроградського 141 (4), 160-169 , 2023
    2023
  • ВІД 3Д-МОДЕЛЮВАННЯ ДО 3Д-ДРУКУ (From 3D modeling to 3D printing)
    КАС Когдась Максим Григорович
    Науково-практичний електронний журнал "Інженерні та освітні технології" 11 … , 2023
    2023
  • Development of a Method of Increasing the Sensitivity of Gas Sensors
    MG Kogdas, OV Donskykh, VY Sytnik, VI Bahno
    2022 IEEE 4th International Conference on Modern Electrical and Energy … , 2022
    2022
  • Method for Improving the Quality of Porous Gallium Arsenide Wafer for Anti-Reflecting Coating of Solar Cells
    A Oksanich, S Pritchin, M Kogdas, A Nekrasov
    2022 IEEE 4th International Conference on Modern Electrical and Energy … , 2022
    2022
    Citations: 5
  • INFORMATION SYSTEM FOR MEASURING DEFORMATIONS OF SEMICONDUCTOR DEVICES GAAS WAFERS
    I Oksanich, I Shevchenko, V Palagin, M Kohdas, V Belska, V Bahno
    Sciences of Europe, 65-74 , 2022
    2022

MOST CITED SCHOLAR PUBLICATIONS

  • Electrical Properties of Metal-Porous GaAs Structure at Water Adsorption: Milovanov, Skryshevsky, Gavrilchenko, Oksanich, Pritchin, and Kogdas
    Y Milovanov, V Skryshevsky, I Gavrilchenko, A Oksanich, S Pritchin, ...
    Journal of Electronic Materials 48 (4), 2587-2592 , 2019
    2019
    Citations: 16
  • Influence of gas adsorption on the impedance of porous GaAs
    YS Milovanov, IV Gavrilchenko, SV Kondratenko, AP Oksanich, ...
    Functional materials 24 (1), 52-55 , 2017
    2017
    Citations: 14
  • Effect of porous GaAs layer morphology on Pd/porous GaAs Schottky contact
    AP Oksanich, SE Pritchin, MG Kogdas, AG Kholod, IV Shevchenko
    Sumy State University , 2019
    2019
    Citations: 11
  • Pd/Porous GaAs in the manufacture of Schottky diodes
    AP Oksanich, SE Pritchin, MG Kogdas, AG Kholod, MG Dernova
    2019 IEEE International Conference on Modern Electrical and Energy Systems … , 2019
    2019
    Citations: 10
  • Effect of H + implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
    NI Klyui, VB Lozinskii, AI Liptuga, VN Dikusha, AP Oksanych, MG Kogdas’, ...
    Semiconductors 51 (3), 305-309 , 2017
    2017
    Citations: 9
  • GaAs Porous Films Electroetching Improvement by Using a Fuzzy Controller
    AP Oksanich, SE Pritchin, MG Kogdas, MG Dernova
    2019 IEEE 9th International Conference Nanomaterials: Applications … , 2019
    2019
    Citations: 7
  • Using impedance porous GaAs-based for biomedical gas sensor
    AP Oksanich, SE Pritchin, MG Kogdas, AG Holod, YS Milovanov, ...
    2017 IEEE 7th International Conference Nanomaterials: Application … , 2017
    2017
    Citations: 7
  • Method for Improving the Quality of Porous Gallium Arsenide Wafer for Anti-Reflecting Coating of Solar Cells
    A Oksanich, S Pritchin, M Kogdas, A Nekrasov
    2022 IEEE 4th International Conference on Modern Electrical and Energy … , 2022
    2022
    Citations: 5
  • Luminescent properties of electrochemically etched gallium arsenide
    IV Gavrilchenko, YS Milovanov, II Ivanov, AN Zaderko, AP Oksanich, ...
    Sumy State University , 2021
    2021
    Citations: 4
  • Класифікація струмопровідних міжз’єднань для сучасних електронних модулів
    ІВ Боцман, МГ Когдась, ВВ Невлюдова
    НДТІП , 2020
    2020
    Citations: 3
  • Удосконалення методу отримання поруватих плівок GaAs з використанням нечіткого контролера
    АП Оксанич, ПС Емільєвич, ВМ Чебенко, МГ Когдась, МА Мащенко
    Радиоэлектроника и информатика, 4-8 , 2019
    2019
    Citations: 3
  • Удосконалення методу отримання поруватого шару на підкладках n-GaAs
    АП Оксанич, СЕ Притчин, МГ Когдась, ОГ Холод, МА Мащенко
    Вчені записки Таврійського національного університету імені ВІ Вернадського … , 2018
    2018
    Citations: 3
  • Разработка высокочувствительных датчиков водорода на базе диодов шоттки, изготовленных из наноразмерных слоев n-GaAs
    АП Оксанич, МГ Когдась, ОГ Холод, МА Мащенко
    Вісник Кременчуцького національного університету імені Михайла … , 2018
    2018
    Citations: 2
  • Разработка математической модели контакта металл-пористый арсенид галлия с барьером Шоттки
    АП Оксанич, СЕ Притчин, МГ Когдась, АГ Холод
    Вісник Кременчуцького національного університету імені Михайла … , 2018
    2018
    Citations: 2
  • Усовершенствование метода создания контактов с барьером Шоттки к пористым полупроводникам
    АП Оксанич, СЭ Притчин, МГ Когдась, АГ Холод, МА Мащенко
    Радиоэлектроника и информатика, 24-28 , 2018
    2018
    Citations: 2
  • Применение пористых слоев GaAs при изготовлении диодов Шоттки
    АП Оксанич, МГ Когдась, ОГ Холод, МА Мащенко
    Вісник Кременчуцького національного університету імені Михайла … , 2018
    2018
    Citations: 2
  • Методы улучшения структурного совершенства полуизолирующего gaas диаметром 100 мм
    АП Оксанич, МГ Когдась, МС Андросюк
    Радиоэлектроника и информатика, 11-14 , 2014
    2014
    Citations: 2
  • Усовершенствование метода и аппаратуры измерения плотности дислокаций в подложках кремния и арсенида галлия
    АП Оксанич, СЭ Притчин, МГ Когдась, ВА Тербан
    Автоматизированные системы управления и приборы автоматики, 53-60 , 2013
    2013
    Citations: 2
  • Исследование имитатора солнечной батареи на базе источника напряжения с безынерционным ограничением тока
    ВФ Шостак, ТВ Горлова, МГ Когдась
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