Baraishuk Siarhei
@bsatu.by
Department of practical training students
Belarusian State Agrarian Technical University
RESEARCH, TEACHING, or OTHER INTERESTS
Engineering, Condensed Matter Physics, Electrical and Electronic Engineering
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Siarhei Baraishuk, Ivan Pavlovic, Muzaffar Murodov, and Murodjon Nabiev
EDP Sciences
A method for reducing the resistance of the ground loop for high-resistance soils by using mixtures based on hydrogel is considered as backfill materials. Based on the results of the research, an analysis was made of the effect of mixtures on soil resistivity, the seasonality factor and the resistance of the ground loop at various temperatures and humidity.
Ivan Pavlovich, Siarhei Baraishuk, and Alexey Skripko
EDP Sciences
The possibility of improving the reliability of the grounding system is shown. The analysis of dependence of soil resistivity on humidity was carried out, on the basis of which a composition for normalization (reduction of seasonality) of soil electrical resistivity was proposed. A number of full-scale experiments were carried out to measure the resistance values of the grounding devices of experimental circuits, after backfilling the places of laying the contour elements with various compositions and introducing other types of soils and minerals.
I. A. Pavlovich and S. M. Baraishuk
Belarusian National Technical University
This article discusses the factors that affect the electrical resistance of the current spreading of the grounding device. The issue of the electrophysical parameters of the soil that affect its resistivity and the consideration of such parameters in the design of grounding devices is considered. It is shown that keeping moisture in the near-electrode space of the grounding electrode, as well as maintaining it at a certain level, facilitates improving the quality and reliability of the grounding. A relationship has been established between the ability to retain moisture and the magnitude of seasonal fluctuations in the electrical resistance of the soixl, and also the season factor, which takes into account changes under different climatic environmental conditions. The issues of application of various methods of reducing the resistivity of the soil during mounting of grounding devices are considered. One of the main ways to reduce ground resistance is the use of solutions of various mineral salts. This method is not optimal, as it accelerates the corrosion processes in the materials of the ground electrodes. Therefore, the paper also considers other ways to reduce the resistance of the ground loop; in particular, the authors propose a method for reducing the resistance of a grounding device based on the method of partial replacing the soil in the near-electrode region with a mixture with a lower resistivity capable of collecting moisture based on graphite and hydrogel. This type of mixture is environmentally friendly when used, as well as it is non-aggressive to the material of the ground loop. The principle of operation of this mixture is based on the fact that the hydrogel makes it possible to stabilize the moisture at the site of laying the circuit, while graphite increases the overall conductivity of the mixture. The paper presents the results of laboratory studies, which have been carried out in accordance with GOST 9.602–2016. For this purpose, control samples were placed in containers made of a non-conductive material (plexiglas) and dependence of resistivity on moisture, temperature, specific content of graphite and hydrogel was measured. The article presents graphs of the dependences of the mixture specific resistance on moisture, temperature, and the quantitative content of the hydrogel. From the results obtained, it can be concluded that the mixture in can be used in the energy sector to improve the reliability of electrical installations and ensure electrical safety.
Aliona V. Stanchik, Vital A. Chumak, Valery F. Gremenok, and Siarhei M. Baraishuk
Elsevier BV
Mikhail Drako and Siarhei Baraishuk
EDP Sciences
The paper considers the reasons to improve the design system for the grounding devices. It proposes a special-purpose composite mixture to reduce the soil electrical resistivity values. A number of field experiments were carried out to measure the resistance values of the grounding devices of the experimental circuits, after their near-electrode soil space had been treated with a special mixture to optimize the electrical resistivity of the grounding connection.
S. M. Baraishuk, T. M. Tkachenko, A. V. Stanchik, V. F. Gremenok, S. A. Bashkirov, M. Wiertel, M. Budzynski, A. I. Turovets, and Y. S. Yakovenko
Pleiades Publishing Ltd
I. Tashlykov, P. Żukowski, O. Mikhalkovich and S. Baraishuk
Institute of Physics, Polish Academy of Sciences
Surface Properties of Me/Si Structures Prepared by Means of Self-Ion Assisted Deposition I. Tashlykova,∗, P. ukowski, O. Mikhalkovich and S. Baraishuk Belarusian State Pedagogical University, 18, Sovetskaja Str., 220050 Minsk, Belarus Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland In this paper a composite structure, topography, wettability and nanohardness of a (100) Si surface modi ed by means of ion-assisted deposition of metal (Me) coatings in conditions of a self-irradiation are discussed.
I. S. Tashlykov and S. M. Baraishuk
Allerton Press
I. I. Tashlykova-Bushkevich, E. S. Gut’ko, V. G. Shepelevich, and S. M. Baraishuk
Pleiades Publishing Ltd
I. S. Tashlykov, P. V. Zukowski, S. M. Baraishuk, and O. M. Mikhalkovich
Informa UK Limited
The composition of Ti-based thin films deposited on silicon using a self-ion assisted deposition (SIAD) method was investigated by utilising the Rutherford backscattering spectrometry technique and RUMP simulation code. The hydrogen affinity of the coatings produced by means of SIAD was investigated using the 1H(15N, αγ)12C nuclear resonance reaction. The titanium–based films on silicon were found to have a high content of oxygen, carbon, hydrogen and substantial concentration of the substrate. Near 10% H content enrichment was found at the surface of coatings but no hydrogen enrichment at the coating–substrate interfaces was observed.
I. S. TASHLYKOV, S. M. BARAISHUK, and O. G. VERES
WORLD SCIENTIFIC