Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Engineering
184
Scholar Citations
5
Scholar h-index
4
Scholar i10-index
RECENT SCHOLAR PUBLICATIONS
Design and Simulation of Broken Gate TFET and its RF Applications KA Singha, A Singha, S Brahma, K Chutia, B Goswami 2025 Joint International Conference on Digital Arts, Media and Technology … , 2025 2025
Dual Source SOI TFET for Inverter Applications AD Bharali, B Sarma, R Paul, T Nath, R Kalita, DD Misra, B Goswami in Sustainable Development, Innovation and Green Technology (ICASDIGT-2024), 217 , 2025 2025
A Source-Drain Engineering Di-Electrically Modulated Double Gate TFET Based Label-Free Biosensor A Bhattacharya, B Goswami, NBD Choudhury TENCON 2024-2024 IEEE Region 10 Conference (TENCON), 628-631 , 2024 2024
Impact of Working Temperature on the I ON /I OFF Ratio of a Hetero Step‐Shaped Gate TFET With Improved … B Goswami, SJ Sengupta, AJ Sarmah, NBD Choudhury Nanodevices for Integrated Circuit Design, 83-91 , 2023 2023
Gate Centric Extended Source SOI TFET B Goswami, R Kalita, SK Sarkar ADBU Journal of Engineering Technology 12 (2) , 2023 2023
Simulation and analytical modeling of various nano TFET structures for performance improvement and validation with circuits B Goswami Jadavpur university, Kolkata, West Bengal , 2023 2023
A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications SJ Sengupta, B Goswami, P Das, SK Sarkar Silicon 14 (10), 5091-5101 , 2022 2022 Citations: 3
Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation D Sen, A De, B Goswami, S Shee, SK Sarkar Journal of Computational Electronics 20 (6), 2594-2603 , 2021 2021 Citations: 19
A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications. Silicon (2021) SKS Savio Jay Sengupta, Bijoy Goswami, Pritam Das Silicon 2021 , 2021 2021
Trapezoidal Channel Double Gate Tunnel FET Suitable for better Scalability, Speed and Low Power Application B Goswami, P Das, A Roy, SJ Sengupta, SK Sarkar 2021 Devices for Integrated Circuit (DevIC), 260-265 , 2021 2021 Citations: 1
Validation of input/output characteristics of symmetrical double source tfet device B Goswami, SJ Sengupta, W Reja, P Das, SK Sarkar 2021 Devices for Integrated Circuit (DevIC), 256-259 , 2021 2021 Citations: 2
Performance Evaluation of a Novel Channel Engineered Junctionless Double-Gate MOSFET for Radiation Sensing and Low-Power Circuit Application D Sen, B Goswami, A Dey, SK Sarakar Electrical and Electronic Devices, Circuits and Materials, 81-98 , 2021 2021
Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues S Mukhopadhyay, D Sen, B Goswami, SK Sarkar IEEE Sensors Journal 21 (4), 4739-4746 , 2020 2020 Citations: 100
Designing Memristor-Based Timing Circuits and Performance Comparison with CMOS Counterparts A Jana, D Bhattacharjee, K Kumari, A Dey, B Goswami, SK Sarkar Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 … , 2020 2020
Room Temperature Pt-Modified WO 3 /p–Si Film Gas Sensor for Detection of Methanol A Dey, K Kumari, A Jana, B Goswami, P Nandi, SK Sarkar Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 … , 2020 2020 Citations: 2
Room Temperature Pt-Modified WO3/p-Si Film Gas Sensor for Detection A Dey, K Kumari, A Jana, B Goswami, P Nandi Smart Trends in Computing and Communications: Proceedings of SmartCom 2020, 201 , 2020 2020
A Novel Approach for RFID-Based Smart EVM System D Sen, SJ Sengupta, A Sharma, W Reja, B Goswami, SK Sarkar Advances in Electrical Control and Signal Systems: Select Proceedings of … , 2020 2020
Impact of trapezoidal channel in double-gate tunnel field effect transistor on ambipolar conduction for ultra low-power application A Roy, B Goswami, U Dey, D Gayen, W Reja, SK Sarkar 2020 17th International Conference on Electrical Engineering/Electronics … , 2020 2020 Citations: 3
Impact of self-heating and nano-gap filling factor on AlGaAs/GaAs junction-less DG-MOSFET based biosensor for early stage diagnostics D Sen, B Goswami, A Dey, P Saha, SK Sarkar 2020 IEEE Region 10 Symposium (TENSYMP), 662-665 , 2020 2020 Citations: 8
The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect B Goswami, K Naskar, A Day, A Jana, SK Sarkar 2020 8th International Electrical Engineering Congress (iEECON), 1-4 , 2020 2020 Citations: 1
MOST CITED SCHOLAR PUBLICATIONS
Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues S Mukhopadhyay, D Sen, B Goswami, SK Sarkar IEEE Sensors Journal 21 (4), 4739-4746 , 2020 2020 Citations: 100
Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation D Sen, A De, B Goswami, S Shee, SK Sarkar Journal of Computational Electronics 20 (6), 2594-2603 , 2021 2021 Citations: 19
Demonstration of T-shaped channel tunnel field-effect transistors B Goswami, D Bhattachariee, DK Dash, A Bhattacharya, SK Sarkar 2018 2nd international conference on electronics, materials engineering … , 2018 2018 Citations: 15
Analytical modelling and simulation of drain doping engineered splitted drain structured TFET and its improved performance in subduing ambipolar effect D Bhattacharjee, B Goswami, DK Dash, A Bhattacharya, SK Sarkar IET Circuits, Devices & Systems 13 (6), 888-895 , 2019 2019 Citations: 13
Impact of self-heating and nano-gap filling factor on AlGaAs/GaAs junction-less DG-MOSFET based biosensor for early stage diagnostics D Sen, B Goswami, A Dey, P Saha, SK Sarkar 2020 IEEE Region 10 Symposium (TENSYMP), 662-665 , 2020 2020 Citations: 8
Analytical Modeling and Simulation of Low Power Salient Source Double Gate TFET B Goswami, D Basak, A Bhattacharya, K Kaur, S Bhowmick, SK Sarkar 2019 Devices for Integrated Circuit (DevIC), 206-210 , 2019 2019 Citations: 4
A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications SJ Sengupta, B Goswami, P Das, SK Sarkar Silicon 14 (10), 5091-5101 , 2022 2022 Citations: 3
Impact of trapezoidal channel in double-gate tunnel field effect transistor on ambipolar conduction for ultra low-power application A Roy, B Goswami, U Dey, D Gayen, W Reja, SK Sarkar 2020 17th International Conference on Electrical Engineering/Electronics … , 2020 2020 Citations: 3
Drain-Doping Engineering and its Influence on Device Output Characteristics and Ambipolar Conduction on a Splitted-Drain TFET Model B Goswami, D Bhattacharjee, A Bhattacharya, SK Sarkar Advances in Communication, Devices and Networking, 21-27 , 2019 2019 Citations: 3
Simulation Modelling and Study on the Impacts of Substrate Concentration and Gate Work Function in MOSFET having Doped-Pocket Substrate P Saha, B Goswami 2018 International Conference on Computing, Power and Communication … , 2018 2018 Citations: 3
Validation of input/output characteristics of symmetrical double source tfet device B Goswami, SJ Sengupta, W Reja, P Das, SK Sarkar 2021 Devices for Integrated Circuit (DevIC), 256-259 , 2021 2021 Citations: 2
Room Temperature Pt-Modified WO 3 /p–Si Film Gas Sensor for Detection of Methanol A Dey, K Kumari, A Jana, B Goswami, P Nandi, SK Sarkar Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 … , 2020 2020 Citations: 2
A Source Pocket Doping in PNPN-DG TFET to Preclude Ambipolar Current–Two Dimensional Simulation B Goswami, LK Barman, A Jana, A Day, W Reja, SK Sarkar 2020 8th International Electrical Engineering Congress (IEECON), 1-4 , 2020 2020 Citations: 2
Implementation of a doped pocket region in order to enhance the device performance of MOSFET P Saha, B Goswami Advances in Communication, Devices and Networking: Proceedings of ICCDN 2018 … , 2019 2019 Citations: 2
Trapezoidal Channel Double Gate Tunnel FET Suitable for better Scalability, Speed and Low Power Application B Goswami, P Das, A Roy, SJ Sengupta, SK Sarkar 2021 Devices for Integrated Circuit (DevIC), 260-265 , 2021 2021 Citations: 1
The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect B Goswami, K Naskar, A Day, A Jana, SK Sarkar 2020 8th International Electrical Engineering Congress (iEECON), 1-4 , 2020 2020 Citations: 1
A Novel Double Source TFET for Low Power Application B Goswami, A Bhattacharya, K Kumari, P Das, W Reja, SK Sarkar 2019 14th Conference on Industrial and Information Systems (ICIIS), 215-219 , 2019 2019 Citations: 1
Implementation of L-Shaped Dielectric Double Metal Dual-Gate TFET Toward Improved Performance Characteristics and Reduced Ambipolarity B Goswami, S Bhowmick, A Haldar, G Paul, D Basak, SK Sarkar Information, Photonics and Communication: Proceedings of Second National … , 2019 2019 Citations: 1
Reduction of Ambipolar Conduction in Centrally Aligned PNPN-DG TFET B Goswami, D Basak, K Kaur, A Bhattacharya, S Bhowmick, SK Sarkar 2019 16th International Conference on Electrical Engineering/Electronics … , 2019 2019 Citations: 1
Design and Simulation of Broken Gate TFET and its RF Applications KA Singha, A Singha, S Brahma, K Chutia, B Goswami 2025 Joint International Conference on Digital Arts, Media and Technology … , 2025 2025