Bhabani Sankar Swain
@ajou.ac.kr
Department of Chemical Engineering
Ajou University, Suwon, South Korea
RESEARCH INTERESTS
Thin Films, Powder Processing, Solar Cell, Nanostructured Materials
Scopus Publications
Scopus Publications
Son Singh, Rahim Abdur, Md. Abdul Kuddus Sheikh, Bhabani Sankar Swain, Jindong Song, Jae-Hun Kim, Ho-Seok Nam, Sung-Hyon Kim, Hyunseung Lee, and Jaegab Lee
MDPI AG
We introduce a novel method for fabricating perovskite solar modules using selective spin-coating on various Au/ITO patterned substrates. These patterns were engineered for two purposes: (1) to enhance selectivity of monolayers primarily self-assembling on the Au electrode, and (2) to enable seamless interconnection between cells through direct contact of the top electrode and the hydrophobic Au connection electrode. Utilizing SAMs-treated Au/ITO, we achieved sequential selective deposition of the electron transport layer (ETL) and the perovskite layer on the hydrophilic amino-terminated ITO, while the hole transport layer (HTL) was deposited on the hydrophobic CH3-terminated Au connection electrodes. Importantly, our approach had a negligible impact on the series resistance of the solar cells, as evidenced by the measured specific contact resistivity of the multilayers. A significant outcome was the production of a six-cell series-connected solar module with a notable average PCE of 8.32%, providing a viable alternative to the conventional laser scribing technique.
Abdul Kareem Kalathil Soopy, Bhaskar Parida, S. Assa Aravindh, Hiba SahulHameed, Bhabani Sankar Swain, Na'il Saleh, Inas Magdy Abdelrahman Taha, Dalaver Hussain Anjum, Vivian Alberts, Shengzhong (Frank) Liu,et al.
Wiley
Perovskite solar cells (PSCs) represent a promising and rapidly evolving technology in the field of photovoltaics due to their easy fabrication, low‐cost materials, and remarkable efficiency improvements over a relatively short period. However, the grain boundaries in the polycrystalline films exhibit a high density of defects, resulting in not only heightened reactivity to oxygen and water but also hampered charge transport and long‐term stability. Herein, an approach involving Zn‐porphyrin (Zn‐PP)‐upgraded antisolvent treatment to enhance the grain size and meanwhile passivate grain boundary defects in FA0.95MA0.05PbI2.85Br0.15 perovskites is presented. The Zn‐PP molecules significantly improve structural and optical properties, effectively mitigating defects and promoting carrier transport at the perovskite/hole transport layer interface. The density functional theory simulation confirms that Zn‐PP forms a strong chemical bonding with the perovskite surface. With Zn‐PP passivation, the total density of state shifts to higher‐energy regions with molecular adsorption, especially near the valence and conduction band edges, indicating that there is an increase in conducting properties of the surface with molecular adsorption. The power conversion efficiency (PCE) of PSCs increases significantly as a result of this improvement, rising from 15.38% to 19.11%. Moreover, unencapsulated PSCs treated with Zn‐PP exhibit outstanding stability, retaining over 91% of their initial PCE.
Santosh Kumar, Ira Singh, Nazrul Hsan, Bhabani Sankar Swain, and Joonseok Koh
Elsevier BV
Bhabani Sankar Swain, Son Singh, Rahim Abdur, Jae-Hun Kim, and Jaegab Lee
American Chemical Society (ACS)
In this report, we report the fabrication of a large grain and high crystallinity perovskite film by combined ultraviolet-ozone (UVO) and thermal treatment of formamidinium iodide solution during the fabrication of formamidinium lead halide (FAPbI2.6Br0.3Cl0.1) films by a two-step deposition method. In this process, lead halide films were treated with UVO-treated FAI at different times. In addition, we have observed that hot-casting of UVO-assisted FAI nucleates the α-FAPbI3 phase in as-prepared films. Again, we observed that the annealed hot-cast UVO-assisted FAI increased the grain size and crystallinity in the films. It was observed that the perovskite film fabricated using 10 min UVO-treated FAI solution shows the highest power conversion efficiency (PCE) up to 17.74%. Furthermore, the perovskite film fabricated with the hot-cast at 120 °C with the 10 min UVO-treated FAI solution improved the PCE to 19.22%. This finding would help with fabrication of large grain, smooth, uniform, and pinhole perovskite films by combining UVO and thermally assisted FAI solution.
Yong-Su Jo, Mansurbek Abdullaev, Gwang-Hwa Jin, Bhabani Sankar Swain, Byongpil Lee, Hyung-Sub Eom, Seok-Hong Min, Seok Ki Kim, Young Keun Kim, and Seung-Min Yang
American Chemical Society (ACS)
In this study, we investigated the effect of the sulfur content in the NiCl2 precursor on the shape of nickel nanoparticles (Ni-NPs) prepared by chemical vapor synthesis. We obtained spherical Ni-NPs when using anhydrous NiCl2 mixed with NiSO4 or Na2SO4 with a molar ratio of 0.002 as precursors without changing any other process parameters whereas faceted Ni-NPs when using only anhydrous NiCl2 as a precursor. First-principles calculations supported experimental results, which showed that NiSO4-mixed NiCl2 and Na2SO4-mixed NiCl2 precursors favored the growth of spherical NPs.
Yong-Su Jo, Hye-Min Park, Gwang-Hwa Jin, Bhabani Sankar Swain, Seok-Hong Min, Young Keun Kim, and Seung-Min Yang
Royal Society of Chemistry (RSC)
Modern electronic devices, such as smartphones and electric vehicles, require multilayer ceramic capacitors (MLCCs), which comprise highly pure Cu terminations and Ni electrodes.
Sagolsem Nonganbi Chanu, Pukhrambam Sushma, Bhabani Sankar Swain, and Bibhu Prasad Swain
Springer Science and Business Media LLC
Sagolsem Nonganbi Chanu, Sayantan Sinha, Pukhrambam Sushma Devi, Naorem Aruna Devi, Vasanta Sathe, Bhabani Sankar Swain, and Bibhu Prasad Swain
Springer Science and Business Media LLC
Pukhrambam Sushma Devi, Sagolsem Nonganbi Chanu, Prajnamita Dasgupta, Bhabani Sankar Swain, and Bibhu Prasad Swain
Springer Science and Business Media LLC
Sayantan Sinha, Wahengbam Ishwarchand Singh, Sumitra Nongthombam, Naorem Aruna Devi, Soumyadeep Laha, Bhabani Sankar Swain, and Bibhu Prasad Swain
Elsevier BV
Bhabani Sankar Swain
Springer Singapore
Bhabani Sankar Swain, Abdur Rahim, Son Singh, and Jaegab Lee
Springer Science and Business Media LLC
Bhabani Sankar Swain and Jaegab Lee
Elsevier BV
Bhabani Sankar Swain and Jaegab Lee
Elsevier BV
Umesh Rizal, Bhabani S. Swain, N. Rameshbabu, and Bibhu P. Swain
Springer Science and Business Media LLC
Rabina Bhujel, Umesh Rizal, Amit Agarwal, Bhabani S. Swain, and Bibhu P. Swain
Springer Science and Business Media LLC
Bibhu P. Swain and Bhabani S. Swain
Springer Science and Business Media LLC
Bhabani Sankar Swain, Md. Abdul Kuddus Sheikh, Son Singh, Rahim Abdur, Daekyun Jeong, and Jaegab Lee
Elsevier BV
Dhruva Kumar, Umesh Rizal, Soham Das, Bhabani S. Swain, and Bibhu Prasad Swain
Springer Singapore
Umesh Rizal, Bibhu P. Swain, and Bhabani S. Swain
IEEE
Gallium phosphide nanowires (GaP-NWs) were synthesized via oxide assisted growth mechanism in a chemical vapor deposition (CVD) and their optoelectronic properties were studied. The diameters of nanowires were in the range of 20-80 nm and lengths extended up to tens of micrometers. Raman spectra studies of GaP-NWs reveal broad and intense peaks at 364 and 398 cm-1 confirmed from transverse optic (TO) and longitudinal optics (LO) phonon. High resolution (HR) X-ray diffraction (XRD) reveals an addition peak that indicates presence of silicon in chemical network of GaP-NWs. Photoluminescence spectra shows intense PL peaks, indicating their potential applications in optoelectronic devices.
Umesh Rizal, Bibhu P. Swain, and Bhabani S. Swain
IEEE
In this work, the optoelectronic properties of H2 diluted Gallium Nitride Nanowires (GaN-NWs) grown on Si substrate were examined. The GaN-NWs were deposited on Indium (In) coated p-type Si substrate by thermal chemical vapor deposition process using GaN powder and pure N2, H2 as precursor gases. A variety of techniques such as Scanning Electron Microscopy (SEM), Fourier Transform Infrared (FTIR) Spectroscopy, Raman Spectroscopy and Photoluminescence (PL) Spectroscopy were used to characterize the grown materials. PL spectra reveals a broad emission band ranging from 2.5 eV to 3.2 eV with intense peak centered at 2.92 eV which is red shifted with respect to bulk GaN (3.4 eV). This might be due to the formation of different electronic energy bands in the presence of H2 and In catalyst which breaks the periodicity of the lattice and modifies the band structure locally.
Umesh Rizal, Bhabani S. Swain, and Bibhu P. Swain
Elsevier BV
Umesh Rizal, Bhabani. S. Swain, and Bibhu. P. Swain
American Institute of Physics
Gallium nitride nanowires (GaN-NWs) of diameters ranging from 20 to 80 nm were grown on the p-type Si substrate by Thermal Chemical Vapor Deposition (TCVD) using Iron (Fe) catalyst via VLS mechanism. Raman and FTIR spectra reveal the presence of broad transverse optic (TO) and longitudinal optic (LO) phonon peak spreads over 500-600 cm−1 and 720 cm−1 respectively. The detail deconvolution of integrated transverse and longitudinal phonon analysis reveals phonon confinement brought out by incorporation of hydrogen atom. The red shifts of TO and LO phonon peak position indicates nanosized effect. IA1(LO)/IA1(TO) increases from 0.073 to 1.0 and their respective fwhmA1(LO)/fwhmA1(TO) also increases from 0.71 to 1.31 with increasing H2 flow rate. E1(LO) - E1(TO) and A1(LO) - A1(TO) increases from 173.83 to 190.73 and 184.89 to 193.22 respectively. Apart from this usual TO and LO phonon, we have found Surface Optic (SO) phonon at 671 cm−1 in FTIR spectra. The intensity of PL peak increases with increasing H2 dil...
Umesh Rizal, Soham Das, Dhruva Kumar, Bhabani S. Swain, and Bibhu P. Swain
American Institute of Physics
Thermal Chemical Vapor Deposition (CVD) deposited Titanium dioxide nanostructures (TiO2-NSs) were grown by using Ti powder and O2 precursors on Si/SiO2 (100) substrate. The microstructure and vibration properties of TiO2-NSs were characterized by Fourier transform infrared (FTIR), SEM, and photoluminescence (PL) spectroscopy. The role of O2 flow rate on TiO2-NSs revealed decreased deposition rate, however, surface roughness has been increased resulted into formation of nanostructure thin films.
Umesh Rizal, Bhabani S. Swain, and Bibhu P. Swain
Springer Science and Business Media LLC