In 1975-1977 Fizouli E. Faradjev worked as a visiting researcher at the Laboratory of Solid State Physics of the Pierre and Marie Curie University - Paris VI. From 1977 to 1995: Head of the Laboratory, founder and first head of the student design bureau, Associate Professor, Professor, and in 1990-1995 Head of the Department of Semiconductor Physics, Chairman of the Academic Council for the Defense of Dissertations of the Physics Faculty of the Azerbaijan State University.
After moving to Sweden, he worked as a visiting researcher at Latronix AB, the Royal Institute of Technology and at the laboratory of Theodor Svedberg, Uppsala University. He is one of the pioneers of nanophotonics. In 2025, he was elected a Member of the Russian Academy of Natural Sciences and has recently been awarded the honorary title "Honored scientist and educator" for developing priority scientific areas, establishing schools, and his contributions to STEM education.
EDUCATION
Soviet, Azerbaijani and Swedish scientist and educator, Doctor of Physical and Mathematical Sciences, Professor, Fizouli E. Faradjev graduated with honors from the Faculty of Radioelectronics of the Leningrad Polytechnic Institute in 1969 and from the postgraduate program of the A.F. Ioffe Physical-Technical Institute in 1973.
ELECTROABSORPTION OF NICKEL-DOPED GALLIUM ARSENIDE. Sov Phys Semicond, 1974
INFLUENCE OF THE ORIENTATION OF THE ELECTRIC FIELD ON THE POLARIZATION DEPENDENCE OF THE ELECTROABSORPTION IN SILICON. Sov Phys Semicond, 1974
ELECTROABSORPTION IN GaP IN THE REGION OF INDIRECT OPTICAL TRANSITIONS. Sov Phys Semicond, 1974
INFLUENCE OF THE POLARIZATION OF LIGHT ON THE ELECTROABSORPTION IN SILICON. Sov Phys Semicond, 1973
RECENT SCHOLAR PUBLICATIONS
Extremely narrow photoluminescence from the ensemble of InAsP/InP quantum dots Author links open overlay panel FE Faradjev Show more F Faradjev Authorea Preprints , 2025 2025
Sharp Emission from InAsP/lnP Quantum Dots EAH F. E. Faradjev Open Access Journal of Applied Science and Technology 3 (3), 01-02 , 2025 2025
Extremely narrow photoluminescence from the ensemble of InAsP/InP quantum dots FE Faradjev Materials Science and Engineering: B 95 (3), 279-282 , 2002 2002 Citations: 13
Room-temperature emission from InAs1− xPx/InP self-assembled quantum dots at wavelengths between 1.2 and 1.35 μm FE Faradjev Materials Science and Engineering: B 94 (2-3), 243-246 , 2002 2002 Citations: 4
Evidence for indirect recombination in GaInNAs/GaAs strained multiple quantum wells FE Faradjev Materials Science and Engineering: B 94 (2-3), 237-242 , 2002 2002 Citations: 4
COMPOSITION-DEPENDENT INCREASE IN THE SLOPE OF THE ABSORPTION-EDGE OF PBSE1-XTEX SOLID-SOLUTIONS FE FARADZHEV SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (6), 719-719 , 1986 1986
Study of volt-ampere characteristics of p-Pbsub (0. 8) Snsub (0. 2) Te-n-PbSesub (1-x) Tesub (x) isoperiodic heterojunctions AS Mekhtiev, EA Akopyan, GA Galandarov, FE Faradzhev Fiz. Tekh. Poluprovodn.(Leningrad);(USSR) 2 , 1986 1986
Limite d'absorption des solutions solides PbTe1-xSx et PbSe1-xSx F FARADZHEV Fizika i tehnika poluprovodnikov 20 (6), 1112-1114 , 1986 1986
Hétérojonction Pb0, 8Sn0, 2Te-p-PbSe0, 08Te0, 92-n à paramètres cristallins identiques obtenue par épitaxie en phase liquide A MEKHTIEV, MI NIKOLAEV, F FARADZHEV, EHA AKOPYAN, ... Fizika i tehnika poluprovodnikov 20 (8), 1388-1391 , 1986 1986
Effet de l'augmentation par concentration de la raideur de la limite d'absorption dans les solutions solides de PbSe1-xTex F FARADZHEV Fizika i tehnika poluprovodnikov 20 (6), 1140-1141 , 1986 1986
Study of Current-Voltage Characteristics of p-Pb _0.8 Sn _0.2 Te -n-PbSe _1-x Te _x Isoperiodic Heterojunctions AS Mekhtiev, EA Akopyan, GA Galandarov, FE Faradzhev Fizika i Tekhnika Poluprovodnikov 20 (2), 335-337 , 1986 1986
-Pb Sn Te -PbSe Te Isoperiodical Heterostructure Produced by the Method of Liquid Epitaxy AS Mekhtiev, MI Nikolaev, FE Faradzhev, EA Akopyan, GA Galandarov, ... Fizika i Tekhnika Poluprovodnikov 20 (8), 1388-1391 , 1986 1986
Effect f Concentration Increase of Absorption-Edge Sharpness in PbSe Te Solid Solutions FE Faradzhev Fizika i Tekhnika Poluprovodnikov 20 (6), 1140-1141 , 1986 1986
Absorption Edge of PbTe S and PbSe S Solid Solutions FE Faradzhev Fizika i Tekhnika Poluprovodnikov 20 (6), 1112-1114 , 1986 1986
Optical properties of PbSesub (1-x) Tesub (x) solid solutions FE Faradzhev Fiz. Tekh. Poluprovodn.(Leningrad);(USSR) 18 (11) , 1984 1984
Fermi surface of holes in PbSesub (1-x) Tesub (x) solid solutions FE Faradzhev, VI Tagirov, GA Galandarov, EG Abdullaev Fiz. Tekh. Poluprovodn.(Leningrad);(USSR) 18 (6) , 1984 1984
Hole concentration dependence of effective mass and Fermi surface anisotropy of PbTe FE Faradzhev Fiz. Tverd. Tela (Leningrad);(USSR) 26 (6) , 1984 1984
Concentration dependence of the Fermi electron surface form in PbSesub (1-x) Tesub (x) FE Faradzhev Izv. Vyssh. Uchebn. Zaved., Fiz.;(USSR) 27 (2) , 1984 1984
Anisotropie de la surface de Fermi des trous dans PbSe F FARADZHEV Fizika i tehnika poluprovodnikov 18 (3), 412-416 , 1984 1984
Variation de la masse effective et de l'anisotropie de la surface de Fermi des trous dans PbTe en fonction de la concentration F FARADZHEV Fizika tverdogo tela 26 (6), 1750-1753 , 1984 1984
MOST CITED SCHOLAR PUBLICATIONS
Pressure dependence of the Raman spectra of indium sulphide FE Faradzhev, NM Gasanly, AS Ragimov, AF Goncharov, SI Subbotin Solid State Communications 39 (4), 587-589 , 1981 1981 Citations: 17
Extremely narrow photoluminescence from the ensemble of InAsP/InP quantum dots FE Faradjev Materials Science and Engineering: B 95 (3), 279-282 , 2002 2002 Citations: 13
Optical-Properties of Pbse1-Xtex Solid-Solutions FE Faradzhev Soviet Physics Semiconductors-Ussr 18 (11), 1311-1312 , 1984 1984 Citations: 6
Davydov splitting and rigid-layer modes in InS crystal NM Gasanly, FE Faradzhev, AS Ragimov, VM Burlakov, AF Goncharov, ... Solid State Communications 42 (12), 843-845 , 1982 1982 Citations: 6
Room-temperature emission from InAs1− xPx/InP self-assembled quantum dots at wavelengths between 1.2 and 1.35 μm FE Faradjev Materials Science and Engineering: B 94 (2-3), 243-246 , 2002 2002 Citations: 4
Evidence for indirect recombination in GaInNAs/GaAs strained multiple quantum wells FE Faradjev Materials Science and Engineering: B 94 (2-3), 237-242 , 2002 2002 Citations: 4
Effective mass of electrons in lead selenide-telluride FE Faradzhev, VI Tagirov, AS Mektiev, EA Akopyan, GA Galandarov Fiz. Tekh. Poluprovodn 16, 908 , 1982 1982 Citations: 2
EFFECTIVE MASS OF ELECTRONS IN PBSE1-XTEX FE Faradzhev, VI Tagirov, AS Mekhtiev, EA Akopyan, GA Galandarov SOVIET PHYSICS SEMICONDUCTORS-USSR 16 (5), 583-584 , 1982 1982 Citations: 1
Extremely narrow photoluminescence from the ensemble of InAsP/InP quantum dots Author links open overlay panel FE Faradjev Show more F Faradjev Authorea Preprints , 2025 2025
Sharp Emission from InAsP/lnP Quantum Dots EAH F. E. Faradjev Open Access Journal of Applied Science and Technology 3 (3), 01-02 , 2025 2025
COMPOSITION-DEPENDENT INCREASE IN THE SLOPE OF THE ABSORPTION-EDGE OF PBSE1-XTEX SOLID-SOLUTIONS FE FARADZHEV SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (6), 719-719 , 1986 1986
Study of volt-ampere characteristics of p-Pbsub (0. 8) Snsub (0. 2) Te-n-PbSesub (1-x) Tesub (x) isoperiodic heterojunctions AS Mekhtiev, EA Akopyan, GA Galandarov, FE Faradzhev Fiz. Tekh. Poluprovodn.(Leningrad);(USSR) 2 , 1986 1986
Limite d'absorption des solutions solides PbTe1-xSx et PbSe1-xSx F FARADZHEV Fizika i tehnika poluprovodnikov 20 (6), 1112-1114 , 1986 1986
Hétérojonction Pb0, 8Sn0, 2Te-p-PbSe0, 08Te0, 92-n à paramètres cristallins identiques obtenue par épitaxie en phase liquide A MEKHTIEV, MI NIKOLAEV, F FARADZHEV, EHA AKOPYAN, ... Fizika i tehnika poluprovodnikov 20 (8), 1388-1391 , 1986 1986
Effet de l'augmentation par concentration de la raideur de la limite d'absorption dans les solutions solides de PbSe1-xTex F FARADZHEV Fizika i tehnika poluprovodnikov 20 (6), 1140-1141 , 1986 1986
Study of Current-Voltage Characteristics of p-Pb _0.8 Sn _0.2 Te -n-PbSe _1-x Te _x Isoperiodic Heterojunctions AS Mekhtiev, EA Akopyan, GA Galandarov, FE Faradzhev Fizika i Tekhnika Poluprovodnikov 20 (2), 335-337 , 1986 1986
-Pb Sn Te -PbSe Te Isoperiodical Heterostructure Produced by the Method of Liquid Epitaxy AS Mekhtiev, MI Nikolaev, FE Faradzhev, EA Akopyan, GA Galandarov, ... Fizika i Tekhnika Poluprovodnikov 20 (8), 1388-1391 , 1986 1986
Effect f Concentration Increase of Absorption-Edge Sharpness in PbSe Te Solid Solutions FE Faradzhev Fizika i Tekhnika Poluprovodnikov 20 (6), 1140-1141 , 1986 1986
Absorption Edge of PbTe S and PbSe S Solid Solutions FE Faradzhev Fizika i Tekhnika Poluprovodnikov 20 (6), 1112-1114 , 1986 1986
Optical properties of PbSesub (1-x) Tesub (x) solid solutions FE Faradzhev Fiz. Tekh. Poluprovodn.(Leningrad);(USSR) 18 (11) , 1984 1984
