Condensed Matter Physics, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials
108
Scopus Publications
3206
Scholar Citations
32
Scholar h-index
73
Scholar i10-index
Scopus Publications
Record Energy Storage Performance Metrics in Ferroelectric Hafnia-Based Films through Heterostructure Design Ampattu R. Jayakrishnan, Nuno Estrócio, Inês Silva, Raluca Negrea, Marian C. Istrate, et al. Advanced Functional Materials, 2026 Capacitive energy storage is part of a promising energy harvesting and storage solution to power Internet of Things (IoT) sensors, overcoming the critical limitations of conventional supercapacitors and micro‐batteries. Moreover, achieving high recoverable energy storage density ( ESD ) and high efficiency ( η ) simultaneously is a key goal in energy storage, often requiring hybrid systems (e.g., combining batteries and supercapacitors) to balance the trade‐offs. Here, we demonstrate a ultra‐thin film capacitor with unprecedented high ESD that can be efficiently released at low operating voltage. This is achieved by using a novel heterostructure design combining ferroelectric La‐doped HfO 2 and a ferroelectric perovskite that is a relaxor induced by polar nanoregions, which enables a low hysteresis loss in the capacitor, thereby leading to an improved η . Additionally, the relaxor ferroelectric layer thickness was optimized to give an optimum voltage drop to allow high maximum polarization and low remnant polarization, the former to allow an ESD of over 50 J/cm 3 , and the latter to allow ŋ to be maximized at ∼95%. Therefore, our fluorite/perovskite heterostructure design and unique materials strategy have together provided a novel way to achieve unprecedented dielectric energy storage properties, proving a new route to electrostatic energy storage for autonomous IoT sensors.
Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films via Novel Interface Layer Approach Ji Soo Kim, Benedetta Gaggio, Babak Bakhit, Veniero Lenzi, Luis Marques, et al. Advanced Science, 2026 Ferroelectric doped hafnium oxide (HfO 2 ) has emerged as CMOS‐compatible and scalable ferroelectric for next‐generation memory/in‐memory computing devices. However, its high coercive field (E c ) and limited endurance remain key obstacles. Here, a ≈25% reduction in E c from 3.3 to 2.5 MV/cm and an order of magnitude increase in endurance by implementing an ultrathin (≈2 nm) 5 at.% Sm‐doped HZO (HZSO) ionic conducting underlayer for HZO are shown. X‐ray photoelectron spectroscopy (XPS) results reveal the absence of redox effects during primary ferroelectric switching in HZSO, unlike in HZO. NEB calculations show that V O ‐rich HZSO lowers the switching barrier compared to that of HZO, which agrees with experimental results. Notably, these improvements are achieved in HZSO|HZO without compromising P r compared to HZO. This approach presents a new powerful route to engineering ferroelectric properties in doped HfO 2 , applicable to both epitaxial and polycrystalline films for future memory devices.
Achieving High ON State Current through Ferroelectric Polarization-Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, et al. Advanced Functional Materials, 2026 In this work, we report on a ferroelectric tunnel junction based on an epitaxial undoped orthorhombic 3‐nm‐thin HfO 2 film. An OFF/ON resistance ratio of ≈83 and a high ON state current density of ≈5 A/cm 2 , important for fast device readout, is achieved through ferroelectric polarization switching, which causes electron accumulation and depletion in the adjacent LSMO electrode. Oxygen vacancy movement inside the HfO 2 is observed, but plays at most a minor role for switching. The devices show stable switching endurance of over 10 6 switching cycles, low write voltages of ±3 V, both outperforming previous epitaxial HfO 2 FTJs, 16 measured resistance states, and neuromorphic capability by voltage pulse trains and spike‐timing‐dependent plasticity. This strong performance is achieved by designing ferroelectric tunnel junctions at the materials level of undoped HfO 2, which has a higher tunneling probability than HZO and a stabilized oxygen distribution. The resulting device design shows great promise for neuromorphic and analog memory applications.
Coercive Field Control in Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films by Nanostructure Engineering Ji Soo Kim, Nives Strkalj, Alexandre Silva, Veniero Lenzi, Luis Marques, et al. ACS Applied Materials and Interfaces, 2025 The discovery of ferroelectric hafnium oxide has spurred great interest in the semiconductor industry, enabled by its complementary metal-oxide-semiconductor compatibility and scalability. However, many questions remain regarding the origin of the ferroelectric phases and the tunability of ferroelectric properties. In this work, we explore the influence of laser fluence on coercive field (Ec) in 10 nm-thick epitaxial rhombohedrally distorted orthorhombic (r-d o) Hf0.5Zr0.5O2 (HZO) films grown by pulsed laser deposition on La0.7Sr0.3MnO3-buffered (001) SrTiO3 substrates. When laser fluence is decreased from 1.3 J cm-2 to 0.5 J cm-2, the Ec decreases from ∼3.3 to ∼2.7 MV/cm. Lower laser fluence produces pure (111) oriented grains, while higher laser fluence produces an additional (11-1) orientation, leading to low angle tilt grain boundaries and associated dislocations which can act as domain pinning sites. The stabilization of the (11-1) orientation and the grain tilting at higher deposition energetics are consistent with density functional theory calculations. To achieve a low Ec in HZO, which is important for energy-efficient ferroelectric memory applications, low energetic growth conditions are required, producing the most highly perfect films.
Optical properties of flexible ceramic films S. Angitha, Kevin V. Alex, J.P.B. Silva, K.C. Sekhar, M. Tasneem, et al. Advanced Flexible Ceramics Design Properties Manufacturing and Emerging Applications, 2023
Electrical properties of flexible ceramics N.S. Kiran Kumar, A.R. Jayakrishnan, R. Rugmini, J.P.B. Silva, M. Pereira, et al. Advanced Flexible Ceramics Design Properties Manufacturing and Emerging Applications, 2023
Structural and Optical Properties of Calcium-doped Zinc Oxide Thin Film Deposited by the PLD Method IH Mejri, JPB Silva, M Nouiri, A Bouloufa, ZB Ayadi, L El Mir Jordan Journal of Physics 19 (1), 65-74 , 2026 2026
Record Energy Storage Performance Metrics in Ferroelectric Hafnia‐Based Films through Heterostructure Design AR Jayakrishnan, N Estrócio, I Silva, R Negrea, MC Istrate, KC Sekhar, ... Advanced Functional Materials, e75213 , 2026 2026
Research data supporting" Achieving high ON state current through ferroelectric polarization-dependent interfacial resistance switching in undoped orthorhombic HfO2 films" M Hellenbrand, N Estrócio, JS Kim, B Bakhit, MC Istrate, C Ghica, ... 2026
Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO 2 Films M Hellenbrand, N Estrócio, JS Kim, B Bakhit, MC Istrate, C Ghica, ... Advanced Functional Materials, e74667 , 2026 2026
From rigid silicon to soft hybrids: A review on emerging materials for wearable photoplethysmography sensors K Gwóźdź, A Kaim, JPB Silva APL Electronic Devices 2 (1) , 2026 2026
Leveraging the integration of perovskite BaTiO3 on ferroelectric fluorite HfO2 to enhance energy storage cyclability and efficiency W Dong, C Magén, J Zou, A Quintana, R Bachelet, G Saint-Girons, ... Nano Energy, 111810 , 2026 2026
CMOS-Compatible ZrO2-Based Film for Photoplethysmography Sensors Enabling Accurate and Sensitive Health Monitoring N Estrócio, AR Jayakrishnan, K Gwozdz, A Kaim, JS Kim, A Silva, V Lenzi, ... ACS Applied Materials & Interfaces , 2026 2026
Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf 0.5 Zr 0.5 O 2 Thin Films via Novel Interface Layer Approach JS Kim, B Gaggio, B Bakhit, V Lenzi, L Marques, SM Fairclough, N Strkalj, ... Advanced Science 13 (5), e17314 , 2026 2026 Citations: 2
Tailoring the metal-oxide interface for improving fatigue performance in HfO2-based ferroelectrics YX Liu, Z Yuan, B Bakhit, H Yu, J Lu, JS Kim, K Wang, J Silva, ... 2025
Ab initio study of doping effects on the ferroelectric and piezoelectric properties of ZrO₂ A Silva, R Ganser, JPB Silva, A Kersch, V Lenzi, L Marques Acta Materialia, 121584 , 2025 2025 Citations: 3
Hard way or hardware? Taking the heat out of AI AR Jayakrishnan, M Hellenbrand, S Dixon, A Mehonic, JPB Silva, ... APL Machine Learning 3 (3) , 2025 2025
ZnO nanostructures for biosensing applications: Recent advances, challenges, and future perspectives M Bhakyalatha, S Sathish, KC Sekhar, JPB Silva, K Kamakshi Microchemical Journal 213, 113893 , 2025 2025 Citations: 15
Research data supporting" Coercive field control in epitaxial ferroelectric Hf0. 5Zr0. 5O2 thin films by nanostructure engineering" JS Kim, N Strkalj, A Silva, V Lenzi, L Marques, M Hill, Z Yuan, Y Liu, ... 2025
Coercive Field Control in Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films by Nanostructure Engineering JS Kim, N Strkalj, A Silva, V Lenzi, L Marques, MO Hill, Z Yuan, YX Liu, ... ACS applied materials & interfaces 17 (17), 25442-25450 , 2025 2025 Citations: 11
Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications NE Silva, AR Jayakrishnan, A Kaim, K Gwozdz, L Domingues, JS Kim, ... Advanced Functional Materials 35 (14), 2416979 , 2025 2025 Citations: 25
Coupling between piezotronics and other physical phenomena L Wang, S Liu, JL MacManus-Driscoll, JPB Silva MRS Bulletin 50 (2), 174-180 , 2025 2025 Citations: 5
Comortamentos aditivos e dependências em Vila Nova de Gaia: breve retrato I Maia, JP Silva, R Madeira 2025
HfO2 and ZrO2-based thin films for electrical energy storage AR Jayakrishnan, LS Marques, JPB Silva Ferroelectricity in Doped Hafnium Oxide, 699-712 , 2025 2025
Engineering Pb-free relaxor ferroelectric thin films for low voltage energy storage applications DJM Ribeiro, SKP Nair, AR Jayakrishnan, J Oliveira, G Magagnin, ... Nanoscale 17 (34), 19794-19805 , 2025 2025 Citations: 2
The benefits of incorporating lead-free ferroelectric materials in high energy density Li-and Li-free batteries AR Jayakrishnan, VB Isfahani, SKP Nair, KC Sekhar, LS Marques, ... Journal of Energy Storage 97, 112846 , 2024 2024 Citations: 5
MOST CITED SCHOLAR PUBLICATIONS
Are lead-free relaxor ferroelectric materials the most promising candidates for energy storage capacitors? AR Jayakrishnan, JPB Silva, K Kamakshi, D Dastan, V Annapureddy, ... Progress in Materials Science 132, 101046 , 2023 2023 Citations: 388
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8) , 2023 2023 Citations: 167
High‐performance ferroelectric–dielectric multilayered thin films for energy storage capacitors JPB Silva, JMB Silva, MJS Oliveira, T Weingärtner, KC Sekhar, M Pereira, ... Advanced Functional Materials 29 (6), 1807196 , 2019 2019 Citations: 117
Energy harvesting technologies for structural health monitoring of airplane components—A review S Zelenika, Z Hadas, S Bader, T Becker, P Gljušćić, J Hlinka, L Janak, ... Sensors 20 (22), 6685 , 2020 2020 Citations: 102
Charge Coupling Enhanced Photocatalytic Activity of BaTiO 3 /MoO 3 Heterostructures KV Alex, A Prabhakaran, AR Jayakrishnan, K Kamakshi, JPB Silva, ... ACS applied materials & interfaces 11 (43), 40114-40124 , 2019 2019 Citations: 100
Advances in dielectric thin films for energy storage applications, revealing the promise of group IV binary oxides JPB Silva, KC Sekhar, H Pan, JL MacManus-Driscoll, M Pereira ACS Energy Letters 6 (6), 2208-2217 , 2021 2021 Citations: 99
Effect of heat treatment on electrical and surface properties of tungsten oxide thin films grown by HFCVD technique GL Tan, D Tang, D Dastan, A Jafari, JPB Silva, XT Yin Materials Science in Semiconductor Processing 122, 105506 , 2021 2021 Citations: 93
Composition-dependent xBa (Zr0. 2Ti0. 8) O3-(1-x)(Ba0. 7Ca0. 3) TiO3 bulk ceramics for high energy storage applications AR Jayakrishnan, KV Alex, A Thomas, JPB Silva, K Kamakshi, N Dabra, ... Ceramics International 45 (5), 5808-5818 , 2019 2019 Citations: 92
Structures, morphological control, and antibacterial performance of tungsten oxide thin films GL Tan, D Tang, D Dastan, A Jafari, Z Shi, QQ Chu, JPB Silva, XT Yin Ceramics International 47 (12), 17153-17160 , 2021 2021 Citations: 89
High-performance self-powered photodetectors achieved through the pyro-phototronic effect in Si/SnOx/ZnO heterojunctions JPB Silva, EMF Vieira, K Gwozdz, A Kaim, LM Goncalves, ... Nano Energy 89, 106347 , 2021 2021 Citations: 81
High-Performance μ-Thermoelectric Device Based on Bi 2 Te 3 /Sb 2 Te 3 p–n Junctions EMF Vieira, AL Pires, JPB Silva, VH Magalhães, J Grilo, FP Brito, MF Silva, ... ACS applied materials & interfaces 11 (42), 38946-38954 , 2019 2019 Citations: 74
Wake-up Free Ferroelectric Rhombohedral Phase in Epitaxially Strained ZrO2 Thin Films JPB Silva, RF Negrea, MC Istrate, S Dutta, H Aramberri, J Íñiguez, ... ACS Applied Materials & Interfaces , 2021 2021 Citations: 73
Characterization of freezing effect upon stability of, probiotic loaded, calcium-alginate microparticles S Sousa, AM Gomes, MM Pintado, JP Silva, P Costa, MH Amaral, ... Food and Bioproducts Processing 93, 90-97 , 2015 2015 Citations: 51
Energy storage performance of ferroelectric ZrO 2 film capacitors: effect of HfO 2: Al 2 O 3 dielectric insert layer JPB Silva, JMB Silva, KC Sekhar, H Palneedi, MC Istrate, RF Negrea, ... Journal of Materials Chemistry A 8 (28), 14171-14177 , 2020 2020 Citations: 50
Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films A Silva, I Fina, F Sanchez, JPB Silva, L Marques, V Lenzi Materials Today Physics 34, 101064 , 2023 2023 Citations: 48
Ferroelectric phase transitions studies in 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 ceramics JPB Silva, EC Queirós, PB Tavares, KC Sekhar, K Kamakshi, JA Moreira, ... Journal of Electroceramics 35 (1), 135-140 , 2015 2015 Citations: 48
Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures KC Sekhar, JPB Silva, K Kamakshi, M Pereira, MJM Gomes Applied Physics Letters 102 (21) , 2013 2013 Citations: 46
Enhanced resistive switching characteristics in Pt/BaTiO 3 /ITO structures through insertion of HfO 2 :Al 2 O 3 (HAO) dielectric thin layer JPB Silva, FL Faita, K Kamakshi, KC Sekhar, JA Moreira, A Almeida, ... Scientific Reports 7 (1), 46350 , 2017 2017 Citations: 45
Ferroelectric Orthorhombic ZrO 2 Thin Films Achieved Through Nanosecond Laser Annealing APS Crema, MC Istrate, A Silva, V Lenzi, L Domingues, MO Hill, ... Advanced Science 10 (15), 2207390 , 2023 2023 Citations: 43
Recent development of lead-free relaxor ferroelectric and antiferroelectric thin films as energy storage dielectric capacitors AR Jayakrishnan, BA Anju, SKP Nair, S Dutta, JPB Silva Journal of the European Ceramic Society 44 (7), 4332-4349 , 2024 2024 Citations: 42
