Kalaivanan Loganathan

@kaust.edu.sa

PhD Student at Material Science and Engineering
King Abdullah University of Science and Technology (KAUST)

Kalaivanan Loganathan


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https://researchid.co/kalaivanan.loganathan
I am a scientist with 5+ years of interdisciplinary experience in the fields of mechanical, nanoscience, & materials engineering.

On the technical side, I am specialized in the design & fabrication of nano-electronic devices with extensive hands-on experience in electrical and radiofrequency measurements and thin film depositions.

I am well-versed in scientific writing, presentations, and strategic planning as evidenced by published 11 research articles, 2 US patents, 3 oral & 1 poster presentation in international conferences, and won the Young Researcher Award in 2020.

EDUCATION

Bachelor of Engineering (BE) in Mechanical Engineering
Masters of Technology (M.Tech) in Nanoscience and Technology
Doctor of Philosophy ( in Material Science and Engineering

RESEARCH INTERESTS

Kalaivanan Loganathan currently does research in Materials Engineering and device fabrication. His project focuses on simple, scalable and large-area nanogap lithography known as adhesion lithography where the metal electrodes are separated by a nanogap (< 20 nm) between them.
19

Scopus Publications

1082

Scholar Citations

13

Scholar h-index

13

Scholar i10-index

Scopus Publications

  • Multi-response optimization of bamboo/PALF - TiC hybrid composites for enhanced mechanical and tribological performance
    R. Saravanan, K. Loganathan, S. Manoj Kumar, Kaviarasan Varadaraju, K. Yoghananthan, Rojalin Mishra
    EPJ Web of Conferences, 2026
    Researchers have developed alternative materials which incorporate diverse fillers and reinforcements in response to increasing requirement wear-resistant hybrid substances. Recent research had shown that hybrid composites made from a mix of natural fibers then ceramic fillers can improve tribological properties of materials used in automobiles and airplanes. A composite with improved tribological and mechanical characteristics at low cost can be achieved by combining natural fibers with ceramics using appropriate multi-response optimization approaches, despite the fact that natural fibers have certain drawbacks. This research delves into the wear behavior of a hybrid composite made of bamboo and PALF, filled with titanium carbide (TiC). Furthermore, this study employs a multi- response optimization method that integrates MOORA with the fuzzy model interference system. To find the lowest possible wear rate and coefficient of friction (COF), the Taguchi L27 orthogonal array (OA) was used in the experimental design. The investigation found that, the best working settings were 1 wt% TiC, 30 wt% reinforcement, 1.5 m/s sliding speed, 15 N load and 1500 m sliding distance with an Entropy - MOORA value of 0.804 and a MOORA fuzzy analysis (MFA) value of 0.801. The worn-out surface mechanisms, and tiny debris were all shown by scanning electron microscopy (SEM) to play a substantial role at achieving appropriate wear properties. In addition, mechanical properties were investigated in both wet and dry environments to determine optimal combination of particle hybrid composite.
  • OPC and modeling solution to support 0.55 NA EUV stitching
    Dongbo Xu, Qinglin Zeng, Xuefeng Zeng, Werner Gillijns, Vicky Philipsen, Kalaivanan Loganathan, Shubhankar Das, Kia Woon Mah, Victor Blanco, Anuja De Silva, Yuyang Sun, Germain Fenger
    Journal of Micro Nanopatterning Materials and Metrology, 2025
    BackgroundThe new high numerical aperture (0.55 NA) extreme ultraviolet lithography (EUVL) machine has been developed, which uses an anamorphic projection system with the demagnification of 4× in x-direction and 8× in y-direction. Due to the unchanged 6 in. mask, 0.55 NA EUVL reduces the exposure field size to half-field (26×16.5 mm2). Therefore, the in-die stitching between two exposures might be needed for applications requiring a larger than half-field size. To achieve in-die stitching in practical applications at advanced nodes, performing model-based optical proximity correction (OPC) is an essential step.AimTo build an accurate OPC model, the interaction effects between two stitching fields require some special considerations, including aerial image interaction, optical proximity effect among the stitching patterns, mask absorber reflection, black border proximity effect, and the stray light from the neighboring fields effect. All these effects must be captured by specific models and corrected during OPC. In this paper, we will study the model accuracy and design decomposition rules at the stitching region and provide a solution from an EDA perspective.ApproachIn this paper, the in-die stitching effects and solutions are investigated using a Ta-based dark-field mask. To study the model accuracy at the stitching region, various stitching test patterns have been designed and placed on imec 0.55 NA test masks, and the wafer data are collected from the 0.55 NA EUV scanner at the joint ASML-imec High NA EUV Lithography Lab. To enable effective in-die stitching, the impact of design decompositions on the stitching performance is investigated by performing stitching OPC with the built double exposure OPC model.ResultsThe model accuracy has been evaluated using the obtained wafer data, both for single and double exposures in the stitching region. It is important to use a smart cut approach to decompose the design before running OPC. Comprehensive results provide a detailed comparison between double exposure in the stitching region and single exposure through simulation, with particular emphasis on their respective impacts on overall stitching performance.ConclusionsIn this paper, the in-die stitching effects and OPC solution have been investigated under idealized lithographic conditions, where mask errors, overlay errors between two exposures, and the resist delay effect are not considered. Our initial investigations indicate that double exposure shows promising model accuracy with the existing calibrated resist model (based on single exposure data), and new resist model calibrations might not be necessary for the stitching region. Notably, the wafer critical dimension (CD) in the double exposure region is sensitive to flare values, resulting in wafer CD shifts and requiring accurate flare characterization. The smart cut approach for design decomposition effectively mitigates edge placement error issues across the stitching line. By employing this smart cut approach, the stitching OPC can deliver patterning performance similar to single exposure OPC, with only slightly degraded exposure latitude.
  • Ultra-Fast Moisture Sensor for Respiratory Cycle Monitoring and Non-Contact Sensing Applications
    Suman Mandal, Harold Mazo Mantilla, Kalaivanan Loganathan, Hendrik Faber, Abhinav Sharma, Murali Gedda, Emre Yengel, Dipak Kumar Goswami, Martin Heeney, Thomas D. Anthopoulos
    Advanced Materials, 2025
    As human‐machine interface hardware advances, better sensors are required to detect signals from different stimuli. Among numerous technologies, humidity sensors are critical for applications across different sectors, including environmental monitoring, food production, agriculture, and healthcare. Current humidity sensors rely on materials that absorb moisture, which can take some time to equilibrate with the surrounding environment, thus slowing their temporal response and limiting their applications. Here, this challenge is tackled by combining a nanogap electrode (NGE) architecture with chicked egg‐derived albumen as the moisture‐absorbing component. The sensors offer inexpensive manufacturing, high responsivity, ultra‐fast response, and selectivity to humidity within a relative humidity range of 10–70% RH. Specifically, the egg albumen‐based sensor showed negligible response to relevant interfering species and remained specific to water moisture with a room‐temperature responsivity of 1.15 × 104. The nm‐short interelectrode distance (circa 20 nm) of the NGE architecture enables fast temporal response, with rise/fall times of 10/28 ms, respectively, making the devices the fastest humidity sensors reported to date based on a biomaterial. By leveraging these features, non‐contact moisture sensing and real‐time respiratory cycle monitoring suitable for diagnosing chronic diseases such as sleep apnea, asthma, and pulmonary disease are demonstrated.
  • Experimental investigation on mechanical, thermal, DMA, and dielectric analysis of Cordia dichotoma with PLA composites
    K. Loganathan, R. Giri, S. P. Srinivasan, P. Vimalanathan
    Biomass Conversion and Biorefinery, 2024
  • Fully Sprayed Metal Oxide Transistors Utilizing Ti3C2Tx MXene Contacts
    Emre Yarali, Jehad K. El-Demellawi, Hendrik Faber, Dipti Naphade, Yuanbao Lin, Kalaivanan Loganathan, Wejdan S. Alghamdi, Xiangming Xu, Atteq ur Rehman, Erkan Aydin, Despoina Gkeka, Linqu Luo, Emre Yengel, Temur Maksudov, Stefaan De Wolf, Husam N. Alshareef, Thomas D. Anthopoulos
    ACS Applied Electronic Materials, 2023
    Printable large-area electronics continue to attract increasing interest from the scientific and industrial communities, owing to their potential for cost-efficient manufacturing. However, the exerted efforts primarily focus on processing semiconductors and dielectrics, with relatively limited attention toward printable electrode materials. In this respect, the family of two-dimensional (2D) transition metal carbides/nitrides, so-called MXenes, have emerged as promising electrode materials owing to their metal-like conductivity and solution processability. Despite their advantageous characteristics, however, to date, the application of MXene electrodes in the area of printed electronics has been marginally explored. Herein, we develop all-solution-processable In2O3/ZnO heterojunction metal oxide thin-film transistors (TFTs) utilizing Ti3C2Tx MXene as the gate and the electron-injecting contacts, entirely spray-coated under ambient conditions. We show that the manufacturing of these fully spray-coated devices can be scaled-up to 4 in. substrates without compromising their operating characteristics. The fabricated TFTs exhibit electron mobility of 3 cm2 V–1 s–1 with an on/off ratio of >104. Our findings demonstrate the possibility of replacing conventional metal contacts with spray-coated MXene electrodes for application in large-area electronics.
  • Wirelessly powered large-area electronics for the Internet of Things
    Luis Portilla, Kalaivanan Loganathan, Hendrik Faber, Aline Eid, Jimmy G. D. Hester, Manos M. Tentzeris, Marco Fattori, Eugenio Cantatore, Chen Jiang, Arokia Nathan, Gianluca Fiori, Taofeeq Ibn-Mohammed, Thomas D. Anthopoulos, Vincenzo Pecunia
    Nature Electronics, 2023
  • Publisher Correction: Wirelessly powered large-area electronics for the Internet of Things (Nature Electronics, (2022), 10.1038/s41928-022-00898-5)
    Luis Portilla, Kalaivanan Loganathan, Hendrik Faber, Aline Eid, Jimmy G. D. Hester, Manos M. Tentzeris, Marco Fattori, Eugenio Cantatore, Chen Jiang, Arokia Nathan, Gianluca Fiori, Taofeeq Ibn-Mohammed, Thomas D. Anthopoulos, Vincenzo Pecunia
    Nature Electronics, 2023
  • Rapid and up-scalable manufacturing of gigahertz nanogap diodes
    Kalaivanan Loganathan, Hendrik Faber, Emre Yengel, Akmaral Seitkhan, Azamat Bakytbekov, Emre Yarali, Begimai Adilbekova, Afnan AlBatati, Yuanbao Lin, Zainab Felemban, Shuai Yang, Weiwei Li, Dimitra G. Georgiadou, Atif Shamim, Elefterios Lidorikis, Thomas D. Anthopoulos
    Nature Communications, 2022
    The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned &lt;10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of &gt;100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.
  • 14 GHz Schottky Diodes Using a p-Doped Organic Polymer
    Kalaivanan Loganathan, Alberto D. Scaccabarozzi, Hendrik Faber, Federico Ferrari, Zhanibek Bizak, Emre Yengel, Dipti R. Naphade, Murali Gedda, Qiao He, Olga Solomeshch, Begimai Adilbekova, Emre Yarali, Leonidas Tsetseris, Khaled N. Salama, Martin Heeney, Nir Tessler, Thomas D. Anthopoulos
    Advanced Materials, 2022
    The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self‐aligned asymmetric nanogap electrodes (≈25 nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C16IDT‐BT is used, as the high hole mobility polymer, and the impact of p‐doping on the diode performance is studied. Pristine C16IDT‐BT‐based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC) of >100 and 6 GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2 pF). Doping of C16IDT‐BT with the molecular p‐dopant C60F48 improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ≈14 GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large‐area RF electronics of the future.
  • A Low-Power CuSCN Hydrogen Sensor Operating Reversibly at Room Temperature
    Viktoras Kabitakis, Emmanouil Gagaoudakis, Marilena Moschogiannaki, George Kiriakidis, Akmaral Seitkhan, Yuliar Firdaus, Hendrik Faber, Emre Yengel, Kalaivanan Loganathan, George Deligeorgis, Leonidas Tsetseris, Thomas D. Anthopoulos, Vassilios Binas
    Advanced Functional Materials, 2022
    Hydrogen is attractive as an abundant source for clean and renewable energy. However, due to its highly flammable nature in a range of concentrations, the need for reliable and sensitive sensor/monitoring technologies has become acute. Here a solid‐state hydrogen sensor based on solution‐processable p‐type semiconductor copper thiocyanate (CuSCN) is developed and studied. Sensors incorporating interdigitated electrodes made of noble metals (gold, platinum, palladium) show excellent response to hydrogen concentration down to 200 ppm while simultaneously being able to operate reversibly at room temperature and at low power. Sensors incorporating Pd electrodes show the highest signal response of 179% with a response time of ≈400 s upon exposure to 1000 ppm of hydrogen gas. The experimental findings are corroborated by density functional theory calculations, which highlight the role of atomic hydrogen species created upon interaction with the noble metal electrode as the origin for the increased p‐type conductivity of CuSCN during exposure. The work highlights CuSCN as a promising sensing element for low‐power, all‐solid‐state printed hydrogen sensors.
  • Flexible Polymer Solar Cells with High Efficiency and Good Mechanical Stability
    I. Kathir, Santaji Krishna Shinde, C. Parswajinan, Sudheer Hanumanthakari, K. Loganathan, S. Madhavarao, A. H. Seikh, M. H. Siddique, Manikandan Ganesan
    International Journal of Photoenergy, 2022
  • Printed Memtransistor Utilizing a Hybrid Perovskite/Organic Heterojunction Channel
    Chun Ma, Hu Chen, Emre Yengel, Hendrik Faber, Jafar I. Khan, Ming-Chun Tang, Ruipeng Li, Kalaivanan Loganathan, Yuanbao Lin, Weimin Zhang, Frédéric Laquai, Iain McCulloch, Thomas D. Anthopoulos
    ACS Applied Materials and Interfaces, 2021
  • 18.4 % Organic Solar Cells Using a High Ionization Energy Self-Assembled Monolayer as Hole-Extraction Interlayer
    Yuanbao Lin, Artiom Magomedov, Yuliar Firdaus, Dimitris Kaltsas, Abdulrahman El‐Labban, Hendrik Faber, Dipti R. Naphade, Emre Yengel, Xiaopeng Zheng, Emre Yarali, Neha Chaturvedi, Kalaivanan Loganathan, Despoina Gkeka, Sanaa H. AlShammari, Osman M. Bakr, Frédéric Laquai, Leonidas Tsetseris, Vytautas Getautis, Thomas D. Anthopoulos
    Chemsuschem, 2021
  • 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale
    Dimitra G. Georgiadou, James Semple, Abhay A. Sagade, Henrik Forstén, Pekka Rantakari, Yen-Hung Lin, Feras Alkhalil, Akmaral Seitkhan, Kalaivanan Loganathan, Hendrik Faber, Thomas D. Anthopoulos
    Nature Electronics, 2020
  • Low-Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing
    Emre Yarali, Hendrik Faber, Emre Yengel, Akmaral Seitkhan, Kalaivanan Loganathan, George T. Harrison, Begimai Adilbekova, Yuanbao Lin, Chun Ma, Yuliar Firdaus, Thomas D. Anthopoulos
    Advanced Electronic Materials, 2020
  • Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions
    Manasvi Kumar, Dimitra G. Georgiadou, Akmaral Seitkhan, Kalaivanan Loganathan, Emre Yengel, Hendrik Faber, Dipti Naphade, Aniruddha Basu, Thomas D. Anthopoulos, Kamal Asadi
    Advanced Electronic Materials, 2020
  • Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices
    Somak Mitra, Yusin Pak, Naresh Alaal, Mohamed N. Hedhili, Dhaifallah R. Almalawi, Norah Alwadai, Kalaivanan Loganathan, Yogeenath Kumarasan, Namsoo Lim, Gun Y. Jung, Iman S. Roqan
    Advanced Optical Materials, 2019
  • High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation
    Somak Mitra, Assa Aravindh, Gobind Das, Yusin Pak, Idris Ajia, Kalaivanan Loganathan, Enzo Di Fabrizio, Iman S. Roqan
    Nano Energy, 2018
  • Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer
    Yusin Pak, Woojin Park, Somak Mitra, Assa Aravindh Sasikala Devi, Kalaivanan Loganathan, Yogeenth Kumaresan, Yonghun Kim, Byungjin Cho, Gun-Young Jung, Muhammad M. Hussain, Iman S. Roqan
    Small, 2018

RECENT SCHOLAR PUBLICATIONS

  • Self-forming nanogap method and device
    TD Anthopoulos, K LOGANATHAN, E YARALI, E YENGEL, HA FABER
    US Patent 12,382,695 , 2025
    2025
  • Ultra‐Fast Moisture Sensor for Respiratory Cycle Monitoring and Non‐Contact Sensing Applications
    S Mandal, HM Mantilla, K Loganathan, H Faber, A Sharma, M Gedda, ...
    Advanced Materials 37 (8), 2414005 , 2025
    2025
    Citations: 36
  • Methods for producing nanoscale patterns, nano-fluidic devices, and nanogap electrochemical devices
    TD Anthopoulos, K LOGANATHAN, U Buttner, E YENGEL, HA FABER
    US Patent 12,209,016 , 2025
    2025
  • Fully Sprayed Metal Oxide Transistors Utilizing Ti 3 C 2 T x MXene Contacts
    E Yarali, JK El-Demellawi, H Faber, D Naphade, Y Lin, K Loganathan, ...
    ACS Applied Electronic Materials 5 (2), 784-793 , 2023
    2023
    Citations: 8
  • Wirelessly powered large-area electronics for the Internet of Things
    L Portilla, K Loganathan, H Faber, A Eid, JGD Hester, MM Tentzeris, ...
    Nature Electronics 6 (1), 10-17 , 2023
    2023
    Citations: 240
  • Nanoscale soft-stamp and nanofluidic channel fabrication using nanogap metal electrodes made via adhesion lithography
    K Loganathan, U Butner, F Pisig Jr, A Syed, D Naphade, H Faber, ...
    Novel Patterning Technologies 2022, PC120540N , 2022
    2022
  • Rapid and up-scalable manufacturing of gigahertz nanogap diodes
    K Loganathan, H Faber, E Yengel, A Seitkhan, A Bakytbekov, E Yarali, ...
    Nature Communications 13 (1), 3260 , 2022
    2022
    Citations: 40
  • 14 GHz Schottky Diodes Using a p ‐Doped Organic Polymer
    K Loganathan, AD Scaccabarozzi, H Faber, F Ferrari, Z Bizak, E Yengel, ...
    Advanced Materials 34 (22), 2108524 , 2022
    2022
    Citations: 28
  • A Low‐Power CuSCN Hydrogen Sensor Operating Reversibly at Room Temperature
    V Kabitakis, E Gagaoudakis, M Moschogiannaki, G Kiriakidis, A Seitkhan, ...
    Advanced Functional Materials 32 (7), 2102635 , 2022
    2022
    Citations: 33
  • Large Area Nanostructured Electronics Enabled Via Adhesion Lithography
    K Loganathan
    2022
  • Printed memtransistor utilizing a hybrid perovskite/organic heterojunction channel
    C Ma, H Chen, E Yengel, H Faber, JI Khan, MC Tang, R Li, K Loganathan, ...
    ACS applied materials & interfaces 13 (43), 51592-51601 , 2021
    2021
    Citations: 16
  • 18.4% organic solar cells using a high ionization energy self‐assembled monolayer as hole‐extraction interlayer
    Y Lin, A Magomedov, Y Firdaus, D Kaltsas, A El‐Labban, H Faber, ...
    ChemSusChem 14 (17), 3569-3578 , 2021
    2021
    Citations: 260
  • 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale
    DG Georgiadou, J Semple, AA Sagade, H Forstén, P Rantakari, YH Lin, ...
    Nature Electronics 3 (11), 718-725 , 2020
    2020
    Citations: 98
  • Low‐voltage heterojunction metal oxide transistors via rapid photonic processing
    E Yarali, H Faber, E Yengel, A Seitkhan, K Loganathan, GT Harrison, ...
    Advanced Electronic Materials 6 (6), 2000028 , 2020
    2020
    Citations: 41
  • Self-forming nanogap diodes operate beyond 10 GHz enabled via adhesion lithography (Conference Presentation)
    K Loganathan, E Yengel, H Faber, A Seitkhan, E Yarali, B Adilbekova, ...
    Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020 … , 2020
    2020
  • Colossal tunneling electroresistance in co‐planar polymer ferroelectric tunnel junctions
    M Kumar, DG Georgiadou, A Seitkhan, K Loganathan, E Yengel, H Faber, ...
    Advanced Electronic Materials 6 (2), 1901091 , 2020
    2020
    Citations: 26
  • Novel P‐type wide bandgap manganese oxide quantum dots operating at deep UV range for optoelectronic devices
    S Mitra, Y Pak, N Alaal, MN Hedhili, DR Almalawi, N Alwadai, ...
    Advanced optical materials 7 (21), 1900801 , 2019
    2019
    Citations: 71
  • High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation
    S Mitra, A Aravindh, G Das, Y Pak, I Ajia, K Loganathan, E Di Fabrizio, ...
    Nano Energy 48, 551-559 , 2018
    2018
    Citations: 101
  • Enhanced Performance of MoS 2 Photodetectors by Inserting an ALD‐Processed TiO 2 Interlayer
    Y Pak, W Park, S Mitra, AA Sasikala Devi, K Loganathan, Y Kumaresan, ...
    Small 14 (5), 1703176 , 2018
    2018
    Citations: 76
  • Experimental Investigation of Mechanical and Chemical Properties of Aluminium reinforced with MWCNT
    K Loganathan, R Sarvesh, CR Prasanna, RNK Babu
    Advances in Materials and Manufacturing, 287 , 2015
    2015

MOST CITED SCHOLAR PUBLICATIONS

  • 18.4% organic solar cells using a high ionization energy self‐assembled monolayer as hole‐extraction interlayer
    Y Lin, A Magomedov, Y Firdaus, D Kaltsas, A El‐Labban, H Faber, ...
    ChemSusChem 14 (17), 3569-3578 , 2021
    2021.0
    Citations: 260
  • Wirelessly powered large-area electronics for the Internet of Things
    L Portilla, K Loganathan, H Faber, A Eid, JGD Hester, MM Tentzeris, ...
    Nature Electronics 6 (1), 10-17 , 2023
    2023.0
    Citations: 240
  • High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation
    S Mitra, A Aravindh, G Das, Y Pak, I Ajia, K Loganathan, E Di Fabrizio, ...
    Nano Energy 48, 551-559 , 2018
    2018.0
    Citations: 101
  • 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale
    DG Georgiadou, J Semple, AA Sagade, H Forstén, P Rantakari, YH Lin, ...
    Nature Electronics 3 (11), 718-725 , 2020
    2020.0
    Citations: 98
  • Enhanced Performance of MoS 2 Photodetectors by Inserting an ALD‐Processed TiO 2 Interlayer
    Y Pak, W Park, S Mitra, AA Sasikala Devi, K Loganathan, Y Kumaresan, ...
    Small 14 (5), 1703176 , 2018
    2018.0
    Citations: 76
  • Novel P‐type wide bandgap manganese oxide quantum dots operating at deep UV range for optoelectronic devices
    S Mitra, Y Pak, N Alaal, MN Hedhili, DR Almalawi, N Alwadai, ...
    Advanced optical materials 7 (21), 1900801 , 2019
    2019.0
    Citations: 71
  • Low‐voltage heterojunction metal oxide transistors via rapid photonic processing
    E Yarali, H Faber, E Yengel, A Seitkhan, K Loganathan, GT Harrison, ...
    Advanced Electronic Materials 6 (6), 2000028 , 2020
    2020.0
    Citations: 41
  • Rapid and up-scalable manufacturing of gigahertz nanogap diodes
    K Loganathan, H Faber, E Yengel, A Seitkhan, A Bakytbekov, E Yarali, ...
    Nature Communications 13 (1), 3260 , 2022
    2022.0
    Citations: 40
  • Ultra‐Fast Moisture Sensor for Respiratory Cycle Monitoring and Non‐Contact Sensing Applications
    S Mandal, HM Mantilla, K Loganathan, H Faber, A Sharma, M Gedda, ...
    Advanced Materials 37 (8), 2414005 , 2025
    2025.0
    Citations: 36
  • A Low‐Power CuSCN Hydrogen Sensor Operating Reversibly at Room Temperature
    V Kabitakis, E Gagaoudakis, M Moschogiannaki, G Kiriakidis, A Seitkhan, ...
    Advanced Functional Materials 32 (7), 2102635 , 2022
    2022.0
    Citations: 33
  • 14 GHz Schottky Diodes Using a p ‐Doped Organic Polymer
    K Loganathan, AD Scaccabarozzi, H Faber, F Ferrari, Z Bizak, E Yengel, ...
    Advanced Materials 34 (22), 2108524 , 2022
    2022.0
    Citations: 28
  • Colossal tunneling electroresistance in co‐planar polymer ferroelectric tunnel junctions
    M Kumar, DG Georgiadou, A Seitkhan, K Loganathan, E Yengel, H Faber, ...
    Advanced Electronic Materials 6 (2), 1901091 , 2020
    2020.0
    Citations: 26
  • Printed memtransistor utilizing a hybrid perovskite/organic heterojunction channel
    C Ma, H Chen, E Yengel, H Faber, JI Khan, MC Tang, R Li, K Loganathan, ...
    ACS applied materials & interfaces 13 (43), 51592-51601 , 2021
    2021.0
    Citations: 16
  • Fully Sprayed Metal Oxide Transistors Utilizing Ti 3 C 2 T x MXene Contacts
    E Yarali, JK El-Demellawi, H Faber, D Naphade, Y Lin, K Loganathan, ...
    ACS Applied Electronic Materials 5 (2), 784-793 , 2023
    2023.0
    Citations: 8
  • ChemSusChem 2021
    Y Lin, A Magomedov, Y Firdaus, D Kaltsas, A El-Labban, H Faber, ...
    DOI , 0
    Citations: 8
  • Self-forming nanogap method and device
    TD Anthopoulos, K LOGANATHAN, E YARALI, E YENGEL, HA FABER
    US Patent 12,382,695 , 2025
    2025.0
  • Methods for producing nanoscale patterns, nano-fluidic devices, and nanogap electrochemical devices
    TD Anthopoulos, K LOGANATHAN, U Buttner, E YENGEL, HA FABER
    US Patent 12,209,016 , 2025
    2025.0
  • Nanoscale soft-stamp and nanofluidic channel fabrication using nanogap metal electrodes made via adhesion lithography
    K Loganathan, U Butner, F Pisig Jr, A Syed, D Naphade, H Faber, ...
    Novel Patterning Technologies 2022, PC120540N , 2022
    2022.0
  • Large Area Nanostructured Electronics Enabled Via Adhesion Lithography
    K Loganathan
    2022.0
  • Self-forming nanogap diodes operate beyond 10 GHz enabled via adhesion lithography (Conference Presentation)
    K Loganathan, E Yengel, H Faber, A Seitkhan, E Yarali, B Adilbekova, ...
    Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020 … , 2020
    2020.0

GRANT DETAILS

Large Area Nano-structured Electronics for Energy Harvesting (LANE): CRG/KAUST/2019. Budget: 1.5 Million USD.
Jan 2019 - PresentJan 2019 - Present

Demonstration of a universal WEH technology that is able to operate up to 30 GHz, i.e. within the 5th generation wireless systems (5G) frequency bands, while taking full advantage of the scalable, large-area adhesion lithography & Nano-Imprint Lithography (NIL) techniques. Demonstration of a universal WEH technology that is able to operate up to 30 GHz, i.e. within the 5th generation wireless systems (5G) frequency bands, while taking full advantage of the scalable, large-area adhesion lithography & Nano-Imprint Lithography (NIL) techniques.


Large-Scale Electronics Manufactured With Light (LASEMAL): CRG/KAUST/2021. Budget: 1.5 million USDLarge-Scale Electronics Manufactured With Light (LASEMAL): CRG/KAUST/2021. Budget: 1.5 million USD
Jan 2021 - PresentJan 2021 - Present

LASEMAL aims to combine a gamut of solution-processable inorganic materials with innovative light-based processing techniques and circumvent traditional energy-demanding manufacturing.

RESEARCH OUTPUTS (PATENTS, SOFTWARE, PUBLICATIONS, PRODUCTS)

US Patents:
Methods For Producing Nanoscale PatternsMethods For Producing Nanoscale Patterns
Filed Mar 25, 2020Filed Mar 25, 2020

Self-Forming Nanogap Method And DeviceSelf-Forming Nanogap Method And Device
Filed Mar 24, 2020

Industry, Institute, or Organisation Collaboration

Member of Materials Research Society (MRS)
Member of Society of Photo-Optical Instrumentation Engineers (SPIE)
Member of Global Engineering Network (GEN)