Leonilson Kiyoshi Sato de Herval

@ufla.br

Institute of Science, Technology and Innovation
Federal Univerty of Lavras

Leonilson Kiyoshi Sato de Herval


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https://researchid.co/leonilsonk

RESEARCH, TEACHING, or OTHER INTERESTS

Multidisciplinary, Condensed Matter Physics, Decision Sciences, Artificial Intelligence
6

Scopus Publications

179

Scholar Citations

5

Scholar h-index

5

Scholar i10-index

Scopus Publications

  • Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures
    Leonilson K.S. Herval, Marcio P.F. de Godoy, Tobias Wecker, Donat J. As
    Journal of Luminescence, 2018
  • The role of defects on the structural and magnetic properties of Nb2O5
    Leonilson K.S. Herval, Driele von Dreifus, Adriano C. Rabelo, Ariano D. Rodrigues, Ernesto C. Pereira, et al.
    Journal of Alloys and Compounds, 2015
  • Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
    V. Lopes-Oliveira, L. K. S. Herval, V. Orsi Gordo, D. F. Cesar, M. P. F. de Godoy, et al.
    Journal of Applied Physics, 2014
    We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III–V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.
  • Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well
    L. K. S. Herval, H. V. A. Galeti, V. Orsi Gordo, Y. Galvao Gobato, M.J.S.P. Brasil, et al.
    2014 29th Symposium on Microelectronics Technology and Devices Chip in Aracaju Sbmicro 2014, 2014
  • Radioluminescence and photoluminescence characterization of Eu and Tb doped barium stannate phosphor ceramics
    M. Ayvacıklı, A. Canimoglu, Y. Karabulut, Z. Kotan, L.K.S. Herval, et al.
    Journal of Alloys and Compounds, 2014
  • Spin injection in n-type resonant tunneling diodes
    Vanessa Orsi Gordo, Leonilson KS Herval, Helder VA Galeti, Yara Galvão Gobato, Maria JSP Brasil, et al.
    Nanoscale Research Letters, 2012
    We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X−). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

RECENT SCHOLAR PUBLICATIONS

  • CRIAÇÃO DE UM ECOSSISTEMA DE INOVAÇÃO E EMPREENDEDORISMO ATRAVÉS DA UNIVERSIDADE: UM ESTUDO DE CASO
    DEHLK SATO, TR ALVES, DEOV RODRIGUES, MARB NUNES
    DE ADMINISTRAÇÃO, SOCIEDADE E INOVAÇÃO Учредители: Programa de Pos Graduacao … , 2025
    2025.0
  • ZnO thin films design: the role of precursor molarity in the spray pyrolysis process
    MPF De Godoy, LKS De Herval, AAC Cotta, YJ Onofre, WAA Macedo
    Journal of Materials Science: Materials in Electronics 31 (20), 17269-17280 , 2020
    2020.0
    Citations: 34
  • Investigation on interface-related defects by photoluminescence of cubic (Al) GaN/AlN multi-quantum wells structures
    LKS Herval, MPF de Godoy, T Wecker, DJ As
    Journal of Luminescence 198, 309-313 , 2018
    2018.0
    Citations: 3
  • The role of defects on the structural and magnetic properties of Nb2O5
    LKS Herval, D von Dreifus, AC Rabelo, AD Rodrigues, EC Pereira, ...
    Journal of Alloys and Compounds 653, 358-362 , 2015
    2015.0
    Citations: 58
  • Engenharia de defeitos em semicondutores de gap largo
    LKS Herval
    Universidade Federal de São Carlos , 2015
    2015.0
  • Enhancement of the luminescence intensity by co-doping Mn2+ into Er3+-doped SrAl2O4
    LKS De Herval, YT Arslanlar, M Ayvacikli, F Iikawa, JA Nobrega, ...
    Journal of Luminescence 163, 17-20 , 2015
    2015.0
    Citations: 22
  • Synthesis and structural characterization of Nb 2 O 5
    LK Herval, D von Dreifus, AC Rabelo, AD Rodrigues, Y Galvão Gobato, ...
    APS March Meeting Abstracts 2015, M9. 011 , 2015
    2015.0
  • Strain and localization effects in InGaAs (N) quantum wells: Tuning the magnetic response
    V Lopes-Oliveira, LKS Herval, V Orsi Gordo, DF Cesar, MPF de Godoy, ...
    Journal of Applied Physics 116 (23) , 2014
    2014.0
    Citations: 11
  • Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well
    LKS Herval, HVA Galeti, VO Gordo, YG Gobato, M Brasil, D Taylor, ...
    2014 29th Symposium on Microelectronics Technology and Devices (SBMicro), 1-5 , 2014
    2014.0
    Citations: 2
  • Radioluminescence and photoluminescence characterization of Eu and Tb doped barium stannate phosphor ceramics
    M Ayvacıklı, A Canimoglu, Y Karabulut, Z Kotan, LKS Herval, ...
    Journal of alloys and compounds 590, 417-423 , 2014
    2014.0
    Citations: 44
  • Spin injection in n-type resonant tunneling diodes
    V Orsi Gordo, LKS Herval, HVA Galeti, YG Gobato, MJSP Brasil, ...
    Nanoscale research letters 7 (1), 592 , 2012
    2012.0
    Citations: 4
  • Polarization-Resolved Magneto-Photoluminescence of InGaAs (N)/GaAs Quantum Wells
    LKS Herval, VO Gordo, A Khatab, MPF de Godoy, YG Gobato, M Brasil, ...
    International Conference on Superlattices, Nanostructures and Nanodevices … , 2012
    2012.0
  • Propriedades Magneto-óticas e de Magneto-transporte de um Diodo de Tunelamento Ressonante contendo Si δ− doping no Poço Quântico
    LKS de Herval
    Dissertaçao (Mestrado). Universidade Federal de Sao Carlos , 2011
    2011.0
    Citations: 1
  • Engenharia de Defeitos em Semicondutores de Gap Largo Leonilson Kiyoshi Sato de Herval UFSCar-São Carlos/SP Fevereiro/2016
    LKS de Herval, MPF de Godoy, P Técnico

MOST CITED SCHOLAR PUBLICATIONS

  • The role of defects on the structural and magnetic properties of Nb2O5
    LKS Herval, D von Dreifus, AC Rabelo, AD Rodrigues, EC Pereira, ...
    Journal of Alloys and Compounds 653, 358-362 , 2015
    2015.0
    Citations: 58
  • Radioluminescence and photoluminescence characterization of Eu and Tb doped barium stannate phosphor ceramics
    M Ayvacıklı, A Canimoglu, Y Karabulut, Z Kotan, LKS Herval, ...
    Journal of alloys and compounds 590, 417-423 , 2014
    2014.0
    Citations: 44
  • ZnO thin films design: the role of precursor molarity in the spray pyrolysis process
    MPF De Godoy, LKS De Herval, AAC Cotta, YJ Onofre, WAA Macedo
    Journal of Materials Science: Materials in Electronics 31 (20), 17269-17280 , 2020
    2020.0
    Citations: 34
  • Enhancement of the luminescence intensity by co-doping Mn2+ into Er3+-doped SrAl2O4
    LKS De Herval, YT Arslanlar, M Ayvacikli, F Iikawa, JA Nobrega, ...
    Journal of Luminescence 163, 17-20 , 2015
    2015.0
    Citations: 22
  • Strain and localization effects in InGaAs (N) quantum wells: Tuning the magnetic response
    V Lopes-Oliveira, LKS Herval, V Orsi Gordo, DF Cesar, MPF de Godoy, ...
    Journal of Applied Physics 116 (23) , 2014
    2014.0
    Citations: 11
  • Spin injection in n-type resonant tunneling diodes
    V Orsi Gordo, LKS Herval, HVA Galeti, YG Gobato, MJSP Brasil, ...
    Nanoscale research letters 7 (1), 592 , 2012
    2012.0
    Citations: 4
  • Investigation on interface-related defects by photoluminescence of cubic (Al) GaN/AlN multi-quantum wells structures
    LKS Herval, MPF de Godoy, T Wecker, DJ As
    Journal of Luminescence 198, 309-313 , 2018
    2018.0
    Citations: 3
  • Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well
    LKS Herval, HVA Galeti, VO Gordo, YG Gobato, M Brasil, D Taylor, ...
    2014 29th Symposium on Microelectronics Technology and Devices (SBMicro), 1-5 , 2014
    2014.0
    Citations: 2
  • Propriedades Magneto-óticas e de Magneto-transporte de um Diodo de Tunelamento Ressonante contendo Si δ− doping no Poço Quântico
    LKS de Herval
    Dissertaçao (Mestrado). Universidade Federal de Sao Carlos , 2011
    2011.0
    Citations: 1
  • CRIAÇÃO DE UM ECOSSISTEMA DE INOVAÇÃO E EMPREENDEDORISMO ATRAVÉS DA UNIVERSIDADE: UM ESTUDO DE CASO
    DEHLK SATO, TR ALVES, DEOV RODRIGUES, MARB NUNES
    DE ADMINISTRAÇÃO, SOCIEDADE E INOVAÇÃO Учредители: Programa de Pos Graduacao … , 2025
    2025.0
  • Engenharia de defeitos em semicondutores de gap largo
    LKS Herval
    Universidade Federal de São Carlos , 2015
    2015.0
  • Synthesis and structural characterization of Nb 2 O 5
    LK Herval, D von Dreifus, AC Rabelo, AD Rodrigues, Y Galvão Gobato, ...
    APS March Meeting Abstracts 2015, M9. 011 , 2015
    2015.0
  • Polarization-Resolved Magneto-Photoluminescence of InGaAs (N)/GaAs Quantum Wells
    LKS Herval, VO Gordo, A Khatab, MPF de Godoy, YG Gobato, M Brasil, ...
    International Conference on Superlattices, Nanostructures and Nanodevices … , 2012
    2012.0
  • Engenharia de Defeitos em Semicondutores de Gap Largo Leonilson Kiyoshi Sato de Herval UFSCar-São Carlos/SP Fevereiro/2016
    LKS de Herval, MPF de Godoy, P Técnico