Dr. Ningombam Ajit kumar

@galgotiacollege.edu

Assistant Professor, Department of ECE
Galgotia College of Engineering and Technology

Dr. Ningombam Ajit kumar


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https://researchid.co/ningombamajitkumar

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering
3

Scopus Publications

67

Scholar Citations

5

Scholar h-index

1

Scholar i10-index

Scopus Publications

  • TFET Fundamentals: A Gateway to Nanoscale Electronics
    Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava, Gaurav Kaushal
    Nanoelectronics Fundamentals Advances and Applications, 2025
    The scaling of conventional field-effect transistors is restricted by the fundamental limit of 60 mV/dec subthreshold swing (SS). In practical scenarios, the SS exceeds the fundamental limit, leading to higher leakage current during the OFF state. This limitation can be overcome using the tunnel field-effect transistor (TFET), whose charge transport is based on quantum tunneling and allows sub-60 mV/dec SS. Such features of TFETs enable faster switching speed, lower power dissipation in the OFF state, and lower short-channel effects (SCEs). So, this chapter discussed TFETs in detail to understand its fundamentals and various aspects. The chapter starts with an overview of TFET, including its evolution. The operation and characteristics of TFET are then discussed, highlighting techniques for enhancing its performance. The application of TFET as biosensors has also been included. Finally, the significance of TFET in advancing nanoscale electronics has been discussed, along with the challenges and future outlook.
  • Prospects of Negative-Capacitance Ferroelectric Field-Effect Transistors in Low-Power Electronics and Beyond
    Ningombam Ajit Kumar, Khuraijam Nelson Singh, Sisira Hawaibam, Sushmita Dandeliya, Sonal Agrawal
    Handbook of Advanced Semiconductor Field Effect Transistors, 2025
    The demand for compact, efficient, and low-power electronics has grown exponentially over the last few decades. However, conventional field-effect transistors (FETs) face subthreshold swing (SS) limitations. Thus, modern integrated circuits (ICs) with billions of transistors exhibit high overall power consumption. The negative-capacitance ferroelectric FET (NC-FeFET) is among the many transistor concepts devised to solve this issue. The NC-FeFET structure is realized by incorporating a ferroelectric material into the FET gate oxide. This modification amplifies the internal voltage near the device channel region, resulting in a steeper SS with a high I ON /I OFF ratio, thus reducing power consumption. In this chapter, the fundamentals of NC-FeFETs are discussed in detail. The first section introduces the NC-FeFET and discusses its evolution and operation. The chapter then discusses NC-FeFET modeling approaches, applications, performance optimization, and challenges. A comparative analysis of the NC-FeFET with other transistors is also presented. Finally, the chapter concludes with future prospects and research trends highlighting the possibilities of NC-FeFETs as future devices.
  • Exploring the electrical behavior of high-k triple-material double-gate junctionless silicon-on-nothing mosfets
    Ningombam Ajit Kumar, Aheibam Dinamani Singh, Nameirakpam Basanta Singh
    Lecture Notes in Electrical Engineering, 2020

RECENT SCHOLAR PUBLICATIONS

  • Prospects of Negative‐Capacitance Ferroelectric Field‐Effect Transistors in Low‐Power Electronics and Beyond
    NA Kumar, KN Singh, S Hawaibam, S Dandeliya, S Agrawal
    Handbook of Advanced Semiconductor Field Effect Transistorss, 43-71 , 2025
    2025
  • TFET Fundamentals: A Gateway to Nanoscale Electronics
    KN Singh, NA Kumar, S Dandeliya, PK Dutta, S Agrawal, A Srivastava, ...
    Nanoelectronics: Fundamentals, Advances, and Applications, 267-295 , 2025
    2025
  • Analysis of Channel Grading on Triple
    NA Kumar, KN Singh
    Advances in Communication, Devices and Networking: Proceedings of ICCDN 2022, 43 , 2023
    2023
  • Analysis of Channel Grading on Triple Material Double Gate Stack Oxide SON MOSFET
    N Ajit Kumar, K Nelson Singh
    International Conference on Communication, Devices and Networking, 43-49 , 2022
    2022
    Citations: 1
  • Exploring the Electrical Behavior of High-K Triple-Material Double-Gate Junctionless Silicon-on-Nothing
    NA Kumar, AD Singh, NB Singh
    Advances in Communication, Devices and Networking: Proceedings of ICCDN 2019 … , 2020
    2020
  • Examining the Electrical characteristic for Triple Material Double-Gate Silicon-On-Nothing (SON) MOSFETs with High Dielectric Oxide: A Comparative Study
    N Ajit Kumar, A Dinamani Singh, N Basanta Singh
    Proceedings of the 5th International Conference on Computers & Management … , 2020
    2020
    Citations: 1
  • Exploring the Electrical Behavior of High-K Triple-Material Double-Gate Junctionless Silicon-on-Nothing MOSFETs
    NA Kumar, AD Singh, NB Singh
    International Conference on Communication, Devices and Networking, 403-410 , 2019
    2019
  • Examining the short channel characteristic and performance of triple material double gate silicon-on-nothing metal oxide semiconductor field effect transistors with grading …
    NA Kumar, AD Singh, NB Singh
    Journal of Nanoelectronics and Optoelectronics 14 (12), 1672-1679 , 2019
    2019
    Citations: 7
  • Examining the short channel characteristic and performance of triple material double gate SON MOSFETs with grading channel concentration
    NA Kumar, AD Singh, NB Singh
    J. Nanoelectron. Optoelectron , 2019
    2019
    Citations: 5
  • Threshold voltage and subthreshold slope comparison of silicon on insulator (SOI) and silicon on nothing (SON) MOSFET using TCAD
    NA Kumar, AD Singh, NB Singh
    Int. J. Electron 6 (3), 3 , 2017
    2017
    Citations: 3
  • Partially depleted and fully depleted silicon on insulator: a comparative study using TCAD
    NA Kumar, AD Singh, NB Singh
    Int. J. Electron 6 (3), 3 , 2017
    2017
    Citations: 9
  • On effect of diversity order on the SNR of M-SC Receivers over TWDP fading channels
    AD Singh, NA Kumar
    International conference on computing and communication systems (I3CS’15), 9-10 , 2015
    2015
    Citations: 3
  • ISOLATION, PURIFICATION AND PARTIAL CHARACTERIZATION OF THE BIOACTIVE COMPOUND PRODUCING LOCAL BACTERIAL ISOLATE FROM DISTILLERY SPENT WASH
    N KUMAR, N SINGH, R CHANAN
    ANNALS OF BIOLOGY 30 (3), 423-428 , 2014
    2014
  • MRI brain edge detection using GAFCM segmentation and canny algorithm
    SJ Romesh Laishram, W. Kanan Kumar, Ningombam Ajit Kumar, Robindro K.
    Intl. Conf. on Advances in Electronics, Electrical and Computer Science … , 2012
    2012
  • Categorization of environmental sounds
    RK Reddy, V Ramachandra, N Kumar, NC Singh
    Biological cybernetics 100 (4), 299-306 , 2009
    2009
    Citations: 33
  • Quantum diffusion on a dynamic disordered and harmonically driven lattice with static bias: Decoherence
    N Singh, N Kumar
    World Scientific Publishing Company , 2005
    2005
  • Quantum diffusion on a dynamically disordered and driven lattice with static bias
    N Singh, N Kumar
    Guru Nanak Dev University , 2004
    2004
  • Studies on pattern of grouping in common bean accessions.
    NK Singh, NK Narendra Kumar
    2003
  • Biomolecular Computers-Next Generation Computers
    S Agrawal, N Kumar
    JOURNAL-INSTITUTION OF ENGINEERS INDIA PART CH CHEMICAL ENGINEERING DIVISION … , 2002
    2002
  • Principal components and divergence studies in rajmash ( Phaseolus vulgaris L.) at high altitude.
    NK Singh, PB Singh, NK Narendra Kumar
    2002

MOST CITED SCHOLAR PUBLICATIONS

  • Categorization of environmental sounds
    RK Reddy, V Ramachandra, N Kumar, NC Singh
    Biological cybernetics 100 (4), 299-306 , 2009
    2009.0
    Citations: 33
  • Partially depleted and fully depleted silicon on insulator: a comparative study using TCAD
    NA Kumar, AD Singh, NB Singh
    Int. J. Electron 6 (3), 3 , 2017
    2017.0
    Citations: 9
  • Examining the short channel characteristic and performance of triple material double gate silicon-on-nothing metal oxide semiconductor field effect transistors with grading …
    NA Kumar, AD Singh, NB Singh
    Journal of Nanoelectronics and Optoelectronics 14 (12), 1672-1679 , 2019
    2019.0
    Citations: 7
  • Examining the short channel characteristic and performance of triple material double gate SON MOSFETs with grading channel concentration
    NA Kumar, AD Singh, NB Singh
    J. Nanoelectron. Optoelectron , 2019
    2019.0
    Citations: 5
  • Degradation and stabilization of resin-dentine interfaces in polymeric dental adhesives: an updated review. Coatings. 2022; 12: 1094
    F Amin, MA Fareed, MS Zafar, Z Khurshid, PJ Palma, N Kumar
    Citations: 5
  • Threshold voltage and subthreshold slope comparison of silicon on insulator (SOI) and silicon on nothing (SON) MOSFET using TCAD
    NA Kumar, AD Singh, NB Singh
    Int. J. Electron 6 (3), 3 , 2017
    2017.0
    Citations: 3
  • On effect of diversity order on the SNR of M-SC Receivers over TWDP fading channels
    AD Singh, NA Kumar
    International conference on computing and communication systems (I3CS’15), 9-10 , 2015
    2015.0
    Citations: 3
  • Analysis of Channel Grading on Triple Material Double Gate Stack Oxide SON MOSFET
    N Ajit Kumar, K Nelson Singh
    International Conference on Communication, Devices and Networking, 43-49 , 2022
    2022.0
    Citations: 1
  • Examining the Electrical characteristic for Triple Material Double-Gate Silicon-On-Nothing (SON) MOSFETs with High Dielectric Oxide: A Comparative Study
    N Ajit Kumar, A Dinamani Singh, N Basanta Singh
    Proceedings of the 5th International Conference on Computers & Management … , 2020
    2020.0
    Citations: 1
  • Prospects of Negative‐Capacitance Ferroelectric Field‐Effect Transistors in Low‐Power Electronics and Beyond
    NA Kumar, KN Singh, S Hawaibam, S Dandeliya, S Agrawal
    Handbook of Advanced Semiconductor Field Effect Transistorss, 43-71 , 2025
    2025.0
  • TFET Fundamentals: A Gateway to Nanoscale Electronics
    KN Singh, NA Kumar, S Dandeliya, PK Dutta, S Agrawal, A Srivastava, ...
    Nanoelectronics: Fundamentals, Advances, and Applications, 267-295 , 2025
    2025.0
  • Analysis of Channel Grading on Triple
    NA Kumar, KN Singh
    Advances in Communication, Devices and Networking: Proceedings of ICCDN 2022, 43 , 2023
    2023.0
  • Exploring the Electrical Behavior of High-K Triple-Material Double-Gate Junctionless Silicon-on-Nothing
    NA Kumar, AD Singh, NB Singh
    Advances in Communication, Devices and Networking: Proceedings of ICCDN 2019 … , 2020
    2020.0
  • Exploring the Electrical Behavior of High-K Triple-Material Double-Gate Junctionless Silicon-on-Nothing MOSFETs
    NA Kumar, AD Singh, NB Singh
    International Conference on Communication, Devices and Networking, 403-410 , 2019
    2019.0
  • ISOLATION, PURIFICATION AND PARTIAL CHARACTERIZATION OF THE BIOACTIVE COMPOUND PRODUCING LOCAL BACTERIAL ISOLATE FROM DISTILLERY SPENT WASH
    N KUMAR, N SINGH, R CHANAN
    ANNALS OF BIOLOGY 30 (3), 423-428 , 2014
    2014.0
  • MRI brain edge detection using GAFCM segmentation and canny algorithm
    SJ Romesh Laishram, W. Kanan Kumar, Ningombam Ajit Kumar, Robindro K.
    Intl. Conf. on Advances in Electronics, Electrical and Computer Science … , 2012
    2012.0
  • Quantum diffusion on a dynamic disordered and harmonically driven lattice with static bias: Decoherence
    N Singh, N Kumar
    World Scientific Publishing Company , 2005
    2005.0
  • Quantum diffusion on a dynamically disordered and driven lattice with static bias
    N Singh, N Kumar
    Guru Nanak Dev University , 2004
    2004.0
  • Studies on pattern of grouping in common bean accessions.
    NK Singh, NK Narendra Kumar
    2003.0
  • Biomolecular Computers-Next Generation Computers
    S Agrawal, N Kumar
    JOURNAL-INSTITUTION OF ENGINEERS INDIA PART CH CHEMICAL ENGINEERING DIVISION … , 2002
    2002.0