MUKKU PAVAN KUMAR

@iitgn.ac.in

Electrical Engineering
Indian Institute of Technology Gandhinagar



                 

https://researchid.co/pavan12110

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, Computational Theory and Mathematics

FUTURE PROJECTS

In-memory Computing for fast data and computational processing processes and there hardware accelerators


Applications Invited
11

Scopus Publications

186

Scholar Citations

6

Scholar h-index

4

Scholar i10-index

Scopus Publications




  • Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications
    Pavan Kumar Mukku and Rohit Lorenzo
    Springer Science and Business Media LLC

  • A Soft Error Upset Recovery SRAM Cell for Aerospace and Military Applications
    Pavan Kumar Mukku and Rohit Lorenzo
    IEEE
    Space radiation particles causes malfunction in electric circuits. It is especially susceptible to memory-sensitive storage devices. When it affects data stored in the memory circuit, it causes disruption. Standard 6T SRAM is incapable of mitigating this disruption. Consequently, numerous authors presented various resilience strategies. However, a tradeoff exists between memory cell efficiency and soft error probability. This article describes a polar design soft error upset recovery SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high-energy particle strike. SUR-16T has superior write stability, lower hold power dissipation, and shorter write access time at PVT variations compared to the mentioned memory cells. Furthermore, SUR-16T has a 0.96x/ 1.15x/ 1.10x/ 1.18x/ 1.02x/ 1.64x greater critical charge than SEA-14T/ RHBD-13T/ RHMC-12T/ QCCS-12T/ NRHC-14T/ HRRT-13T at 0.8V. In addition, the proposed memory cell demonstrated a higher relative figure of merit than existing memory cells.

  • Soft Error Immune RHBD-14T SRAM Cell for Space and Satellite Applications
    Pavan Kumar. Mukku and Rohit. Lorenzo
    Institute of Electrical and Electronics Engineers (IEEE)

  • A Highly Stable PNN-PPN-10T SRAM Cell with Improved Reliability
    Mukku Pavan Kumar, Rohit Lorenzo, Junjurampalli Khaja, and Avtar Singh
    IEEE
    A new PNN-PPN 10T static random access memory (SRAM) cell is presented in this paper. The proposed design aims to address stability of memory cell at worst-case analysis, leakage power analysis, read power analysis and soft error resilience analysis. The proposed design metrics are compared with existing memory cells such as 6T SRAM, feedback control-8T SRAM, low power-9T SRAM, PPN-10T SRAM, schmitt trigger-HT SRAM, low power-8T SRAM. Results observed that the proposed PPN-PNN 10T SRAM improved stability at worst-case analysis, reduces read delay by 0.98x/ 1.08x/ 1.15x/ 1.21x/ 1.15x/ 1.12x times shorter than 6T SRAM/ 8T SRAM/ 9T SRAM/ 10T SRAM/ 11T SRAM/ LP 8T SRAM cells respectively. Moreover, write delay is 1.13x/ 1.06x/ 1.27x times lower than 10T SRAM/ 11T SRAM/ 8T SRAM respectively. Furthermore, leakage power is also reduced. The simulation result shows that the proposed memory cell is suitable for stable and reliable cache memory applications.

  • A review on radiation-hardened memory cells for space and terrestrial applications
    Mukku Pavan Kumar and Rohit Lorenzo
    Wiley
    SummaryOver the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of and the impact of on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.

  • A 1.2V, Radiation Hardened 14T SRAM Memory Cell for Aerospace Applications
    Mukku Pavan Kumar and Rohit Lorenzo
    IEEE
    In this paper, a 1.2V, radiation-hardened 14T SRAM (RHS-14T) memory cell is proposed to resilience the single event upset (SEU) and dual node upset (DNU) soft errors. The proposed RHS-14T memory cell obtained a 0% failure probability compared to the recently reported radiation-hardened SRAM cells like RSP-14T, RHBD-15T, SAR-14T, SIRI-14T, RH-14T, and SEA-14T with a maximum of 80 fC charge sharing is applied to the sensitive node pairs. The proposed RHS-14T exhibits 2.76x/ 1.43x/ 1.04x/ 1.63x times larger RSNM than RSP-14T/ SAR-14T/ RH-14T/ SEA-14T and 1.18x/ 1.04x/ 1x/ 1.13x/ 1.13x/ 1.21x times larger WSNM than RSP-14T/ RHBD-15T/ SAR-14T/ SIRI-14T/ RH-14T/ SEA-14T. Furthermore, 1.55x/ 1.14x/ 1.12x/ 1.47x/ 1.02x/ 1.54x times larger HSNM than RSP-14T/ RHBD-15T/ SAR-15T/ SIRI-14T/ RH-14T/ SEA-14T. Moreover, 2.06x/ 2.18x/ 1.12x/ 1.01x/ 1.72x/ 1.09x larger effective critical charge than RSP-14T/ RHBD-15T/ SAR-14T/ SIRI-14T/ RH-14T/ SEA14T when supply voltage is at 1V. Results and discussions shows that RHS-14T mitigates a single event upset in all the sensitive nodes. Furthermore, it achieves a better noise margin in terms of write and hold stability in worst-case PVT variations.

  • Low Power and High-Performance Associative Memory Design
    Rohit Lorenzo, Sai Naga Snigdha Vajhala, and Mukku Pavan Kumar
    IEEE
    Memory is an essential element of every VLSI circuit. This paper reviews Content Addressable Memory (CAM) and its conventional architectures. A model of CAM is proposed using a transmission gate (TG). The new design is proposed with 1-bit storing data. The performance of the proposed design is investigated in terms of the following parameters. power, layout area, power delay product (PDP), and transistors count. The design metrics of the circuit are compared at various technology nodes to understand the working better.

  • Recent Trends and Challenges on Low-Power FinFET Devices
    Pavan Kumar Mukku, Sushmi Naidu, Divya Mokara, Puthi Pydi Reddy, and Kuppili Sunil Kumar
    Springer Singapore

RECENT SCHOLAR PUBLICATIONS

  • A Low Leakage Variations and High Stability 9T SRAM Cells
    G Anjaneyulu, MD Prakash, MP Kumar, SU Haq
    2024 IEEE International Conference of Electron Devices Society Kolkata 2024

  • A robust radiation resistant SRAM cell for space and military applications
    MP Kumar, R Lorenzo
    Integration 96, 102155 2024

  • A 14T Radiation Resistant Self-Recoverable SRAM Cell
    MP Kumar, R Lorenzo
    2024 2nd International Conference on Device Intelligence, Computing and 2024

  • An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors
    PK Mukku, R Lorenzo
    Microelectronics Reliability 152, 115303 2024

  • A soft error upset hardened 12T-SRAM cell for space and terrestrial applications
    PK Mukku, R Lorenzo
    Memories-Materials, Devices, Circuits and Systems 6, 100092 2023

  • A soft error upset recovery SRAM cell for aerospace and military applications
    PK Mukku, R Lorenzo
    TENCON 2023-2023 IEEE Region 10 Conference (TENCON), 744-749 2023

  • Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications
    PK Mukku, R Lorenzo
    Microsystem Technologies 29 (10), 1489-1500 2023

  • Double node upset immune RHBD-14T SRAM cell for space and satellite applications
    PK Mukku, R Lorenzo
    IEEE Access 11, 96256-96271 2023

  • A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability
    MP Kumar, R Lorenzo, J Khaja, A Singh
    2023 3rd International conference on Artificial Intelligence and Signal 2023

  • Soft error immune RHBD-14t SRAM cell for space and satellite applications
    PK Mukku, R Lorenzo
    IEEE Access 1 2023

  • A review on radiation‐hardened memory cells for space and terrestrial applications
    M Pavan Kumar, R Lorenzo
    International journal of circuit theory and applications 51 (1), 475-499 2023

  • A 1.2 v, radiation hardened 14t sram memory cell for aerospace applications
    MP Kumar, R Lorenzo
    2022 IEEE Silchar Subsection Conference (SILCON), 1-7 2022

  • Low power and high-performance associative memory design
    R Lorenzo, SNS Vajhala, MP Kumar
    2022 2nd International Conference on Emerging Frontiers in Electrical and 2022

  • Recent trends and challenges on low-power finfet devices
    PK Mukku, S Naidu, D Mokara, P Pydi Reddy, K Sunil Kumar
    Smart Intelligent Computing and Applications: Proceedings of the Third 2019

  • An efficient flash memory devices
    MP Kumar, GJ Rao, PK Vani, AK Gupta, KS Kumar
    2019 IEEE International Conference on Intelligent Systems and Green 2019

  • An Efficient Level Converter Model for Power Optimization
    MP KUMAR, V SASIKALA, P PRASANTH, P PADMAJA, VM RAJU
     2018

  • Smart intelligent computing and applications
    SC Satapathy, V Bhateja, S Das
    Proceedings of the second international conference on SCI 1 2018

  • Smart computing and informatics
    SC Satapathy, V Bhateja, S Das
    Proceedings of the First International Conference on SCI 1 2016

  • Modelling And 3D Printing Of 4-Wheeler Exhaust Manifold
    M Siddiqui, PSNS Reddy, M Pravallika, MP Kumar, R Shivamani

  • Memories-Materials, Devices, Circuits and Systems
    PK Mukku, R Lorenzo

MOST CITED SCHOLAR PUBLICATIONS

  • Smart intelligent computing and applications
    SC Satapathy, V Bhateja, S Das
    Proceedings of the second international conference on SCI 1 2018
    Citations: 77

  • A review on radiation‐hardened memory cells for space and terrestrial applications
    M Pavan Kumar, R Lorenzo
    International journal of circuit theory and applications 51 (1), 475-499 2023
    Citations: 28

  • Smart computing and informatics
    SC Satapathy, V Bhateja, S Das
    Proceedings of the First International Conference on SCI 1 2016
    Citations: 15

  • Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications
    PK Mukku, R Lorenzo
    Microsystem Technologies 29 (10), 1489-1500 2023
    Citations: 12

  • A 1.2 v, radiation hardened 14t sram memory cell for aerospace applications
    MP Kumar, R Lorenzo
    2022 IEEE Silchar Subsection Conference (SILCON), 1-7 2022
    Citations: 8

  • Recent trends and challenges on low-power finfet devices
    PK Mukku, S Naidu, D Mokara, P Pydi Reddy, K Sunil Kumar
    Smart Intelligent Computing and Applications: Proceedings of the Third 2019
    Citations: 8

  • A robust radiation resistant SRAM cell for space and military applications
    MP Kumar, R Lorenzo
    Integration 96, 102155 2024
    Citations: 6

  • An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors
    PK Mukku, R Lorenzo
    Microelectronics Reliability 152, 115303 2024
    Citations: 6

  • Double node upset immune RHBD-14T SRAM cell for space and satellite applications
    PK Mukku, R Lorenzo
    IEEE Access 11, 96256-96271 2023
    Citations: 6

  • A soft error upset hardened 12T-SRAM cell for space and terrestrial applications
    PK Mukku, R Lorenzo
    Memories-Materials, Devices, Circuits and Systems 6, 100092 2023
    Citations: 4

  • A soft error upset recovery SRAM cell for aerospace and military applications
    PK Mukku, R Lorenzo
    TENCON 2023-2023 IEEE Region 10 Conference (TENCON), 744-749 2023
    Citations: 4

  • An efficient flash memory devices
    MP Kumar, GJ Rao, PK Vani, AK Gupta, KS Kumar
    2019 IEEE International Conference on Intelligent Systems and Green 2019
    Citations: 4

  • Soft error immune RHBD-14t SRAM cell for space and satellite applications
    PK Mukku, R Lorenzo
    IEEE Access 1 2023
    Citations: 3

  • Low power and high-performance associative memory design
    R Lorenzo, SNS Vajhala, MP Kumar
    2022 2nd International Conference on Emerging Frontiers in Electrical and 2022
    Citations: 3

  • A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability
    MP Kumar, R Lorenzo, J Khaja, A Singh
    2023 3rd International conference on Artificial Intelligence and Signal 2023
    Citations: 2