Electrical and Electronic Engineering, Sensory Systems, Aerospace Engineering
41
Scopus Publications
Scopus Publications
Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors M. Gouveia da Cunha, S. Place, O. Gauthier, N. Virollet, M. Vignetti, P. Martin-Gonthier, P. Magnan, V. Goiffon IEEE International Reliability Physics Symposium Proceedings, 2024 ADC circuits may cause RTS column signatures in 3D stacked CMOS image sensors. This work proposes a statistical and design evaluation of RTS for 40nm node devices, used in ADC circuits. A transistor array mimicking 3T CIS pixel array architecture is used for RTS characterization, with a proposed RTS detection methodology and counting. The designs presented exhibit a noteworthy decrease in the number of RTS occurrences, as evidenced by the experimental results.
TCAD Calibration at Cryogenic Temperatures for CMOS Image Sensor Simulations O. Marcelot, A. Panglosse, P. Martin-Gonthier, V. Goiffon IEEE Transactions on Electron Devices, 2022 A simple calibration method is presented for the technology computer-aided design (TCAD) simulation at cryogenic temperature, with a special focus on image sensor application. Based on the principle that TCAD tools are not completely mature for cryogenic environment, a calibration is needed to perform reliable simulations. In this work, measurements and simulations of sheet resistances are used for the TCAD calibration, and an experimental verification is performed by means of the extraction of pinning voltages on JFETs and on a pixel including a pinned photodiode (PPD).
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors through Use of Correction Frame O. Marcelot, F. Pace, P. Martin-Gonthier, O. Saint-Pe, M. Breart de Boisanger, P. Magnan IEEE Transactions on Electron Devices, 2021 A postprocessing method for mitigating parasitic light sensitivity in global shutter CMOS image sensor (GS-CIS) has been developed by means of an additional frame for correction. The method uses the capability of GS-CISs to integrate the correction frame during the readout phase, allowing for a concurrent measurement of the parasitic light-induced signal. The method relies on development and validation, through experimental data, of the pixel output model in global shutter mode. The pixel output model studies the signal induced by parasitic light collection. Noise associated with correction is modeled and analyses are performed, showing some impact on the corrected frame.
Modeling, simulation methods and characterization of photon detection probability in CMOS-SPAD Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cédric Virmontois, Olivier Saint-Pé, Pierre Magnan Sensors, 2021 Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology are potential candidates for future “Light Detection and Ranging” (Lidar) space systems. Among the SPAD performance parameters, the Photon Detection Probability (PDP) is one of the principal parameters. Indeed, this parameter is used to evaluate the SPAD sensitivity, which directly affects the laser power or the telescope diameter of space-borne Lidars. In this work, we developed a model and a simulation method to predict accurately the PDP of CMOS SPAD, based on a combination of measurements to acquire the CMOS process doping profile, Technology Computer-Aided Design (TCAD) simulations, and a Matlab routine. We compare our simulation results with a SPAD designed and processed in CMOS 180 nm technology. Our results show good agreement between PDP predictions and measurements, with a mean error around 18.5%, for wavelength between 450 and 950 nm and for a typical range of excess voltages between 15 and 30% of the breakdown voltage. Due to our SPAD architecture, the high field region is not entirely insulated from the substrate, a comparison between simulations performed with and without the substrate contribution indicates that PDP can be simulated without this latter with a moderate loss of precision, around 4.5 percentage points.
Dark Count Rate Modeling in Single-Photon Avalanche Diodes Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cedric Virmontois, Olivier Saint-Pe, Pierre Magnan IEEE Transactions on Circuits and Systems I Regular Papers, 2020 In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology Computer-Aided Design (TCAD) simulations and a Matlab routine.
An efficient method for modeling parasitic light sensitivity in global shutter CMOS image sensors Federico Pace, Olivier Marcelot, Philippe Martin-Gonthier, Olivier Saint-Pe, Michel Breart de Boisanger, Rose-Marie Sauvage, Pierre Magnan International Conference on Simulation of Semiconductor Processes and Devices SISPAD, 2019 Parasitic Light Sensitivity (PLS) is a key performance parameter for Global Shutter CMOS Image Sensors (GSCIS), which quantifies the sensor sensitivity to light when the shutter is supposed closed. Its modeling and understanding would allow for an optimization in developing future sensors. This paper aims to present an efficient method for 2D modeling PLS in GSCIS through separation of the optical problem from the carriers motion one. The optical problem is solved thanks to Finite-Differences Time-Domain (FDTD) simulations, while solution to the carriers motion problem is given through the application of the Boltzmann Transport Equation (BTE). This method is presented as a faster alternative to the coupled use of FDTD and TCAD simulations: since it is supposed that the two problem solutions are independent, the two simulations can be performed in parallel. The results show good match between the developed method and the TCAD solutions, thus showing fair agreement with experimental data, probably due to a poor knowledge of the back-end process.
A Fast Method for Modeling and Optimizing Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Federico Pace, Olivier Marcelot, Philippe Martin-Gonthier, Olivier Saint-Pé, Michel Breart de Boisanger, Rose-Marie Sauvage, Pierre Magnan European Solid State Device Research Conference, 2019 This paper aims to model Parasitic Light Sensitivity (PLS) in Global Shutter CMOS Image Sensors (GS-CIS) through separation of the optical problem from the carriers motion one, reducing required simulation. Finite-Differences Time-Domain (FDTD) simulations are used to solve the optical problem, while photo-generated carriers motion is modeled as a straight line, with limited influence of the local electric field. Though not showing perfect agreement with experimental data, the model can be used for analyzing the influence of some key parameters on PLS for GS-CIS optimization.
Performance Parameters Modeling and Simulation of Single-Photon Avalanche Diodes for Space LIDAR Applications Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cedric Virmontois, Olivier Saint-Pe, Pierre Magnan Prime 2019 15th Conference on Ph D Research in Microelectronics and Electronics Proceedings, 2019 In this paper, we present a model to simulate accurately two main performance parameters of Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology, the Photon-Detection-Probabilty (PDP) and the Dark-Count-Rate (DCR). The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate these statistical parameters, the model is based on a combination of measurements to acquire data related to trap population, Technology CAD (TCAD) simulations and a Matlab routine.
Modeling of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Federico Pace, Olivier Marcelot, Philippe Martin-Gonthier, Olivier Saint-Pé, Michel Breart de Boisanger, Rose-Marie Sauvage, Pierre Magnan Smacd 2019 16th International Conference on Synthesis Modeling Analysis and Simulation Methods and Applications to Circuit Design Proceedings, 2019 This paper aims to model Parasitic Light Sensitivity (PLS) in Global Shutter CMOS Image Sensors (GS-CIS) through separation of the optical problem from the carriers motion one, reducing required simulation time. The optical problem is solved thanks to Finite-Differences Time-Domain (FDTD) simulations. Solution to the carriers motion problem is shown in two ways: through use of Boltzmann Transport Equation (BTE) and through a straight line type of motion. The results show good reproduction of experimental data behavior, though fitting has still to be improved.
Research-grade CMOS image sensors for demanding space applications Robert Davancens, Franck Corbière, Olivier Saint-Pé, Michel Tulet, Franck Larnaudie, Pierre Magnan, Philippe Martin-Gonthier, Pierre Belliot Proceedings of SPIE the International Society for Optical Engineering, 2017
Development of a 750x750 pixels CMOS imager sensor for tracking applications Bruno Vignon, Pierre Magnan, Franck Corbière, Franck Larnaudie, Nicolas Guardiola, Olivier Saint-Pé, Michel Tulet, Robert Davancens, Philippe Martin-Gonthier, Magali Estribeau Proceedings of SPIE the International Society for Optical Engineering, 2017
Exploring the 3D integration technology for CMOS image sensors Fernando Raymundo, Phillipe Martin-Gonthier, Romain Molina, Sebastien Rolando, Pierre Magnan Informal Proceedings of the 11th International Workshop of Electronics Control Measurement Signals and their Application to Mechatronics Ecmsm 2013, 2013
Research-grade CMOS image sensors for remote sensing applications Olivier Saint-Pe, Michel Tulet, Robert Davancens, Franck Larnaudie, Pierre Magnan, Philippe Martin-Gonthier, Franck Corbiere, Pierre Belliot, Magali Estribeau Proceedings of SPIE the International Society for Optical Engineering, 2004
Research-grade CMOS image sensors for demanding space applications European Space Agency Special Publication ESA SP, 2004
Development of A 750×750 pixels cmos imager sensor for tracking applications European Space Agency Special Publication ESA SP, 2004
High performances monolithic CMOS detectors for space applications Olivier Saint-Pe, Michel Tulet, Robert Davancens, Franck Larnaudie, Bruno Vignon, Pierre Magnan, Jean A. Farre, Franck Corbiere, Philippe Martin-Gonthier Proceedings of SPIE the International Society for Optical Engineering, 2001
