Puja Ghosh

@nits.ac.in

Student
NIT Silchar



           

https://researchid.co/pujaghosh

RESEARCH INTERESTS

Semiconductor Device Simulation and modelling

154

Scholar Citations

8

Scholar h-index

7

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Design Implementation and RF Analysis of Vertical L-Pattern Gate TFET on SELBOX Substrate
    P Ghosh, K Vanlalawmpuia
    Transactions on Electrical and Electronic Materials, 1-7 2024

  • Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET
    S Kumari, P Ghosh
    Microelectronics Journal 144, 106059 2024

  • Insights into the impact of random dopant fluctuation on ferroelectric germanium source vertical TFET
    K Vanlalawmpuia, P Ghosh, B Bhowmick
    Materials Science and Engineering: B 299, 116994 2024

  • An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications
    P Ghosh, S Tripathi, WV Devi
    Applied Physics A 129 (11), 781 2023

  • Performance assessment of dielectrically modulated negative capacitance germanium source vertical tunnel FET biosensor for detection of breast cancer cell lines
    K Vanlalawmpuia, P Ghosh
    AEU-International Journal of Electronics and Communications 171, 154902 2023

  • Electrical Characteristics and Reliability Analysis of Hetero-dielectric Dual Tunnel Diode TFET
    P Ghosh
    2023 IEEE 33rd International Conference on Microelectronics (MIEL), 1-4 2023

  • Electrical performance and noise assessment of vertical ferroelectric tunnel junction based SELBOX TFET
    P Ghosh
    Physica Scripta 98 (2), 025008 2023

  • Performance enhancement of a FET device with ferroelectric tunnel junction and its application as a biosensor
    P Ghosh, B Bhowmick
    Journal of Computational Electronics 21 (6), 1416-1424 2022

  • Performance analysis and digital application of vertical L-pattern dual tunnel diode TFET
    P Ghosh
    Microelectronics Journal 129, 105604 2022

  • Study of variability induced by random dopant fluctuation in Fe DS-SBTFET
    P Ghosh, B Bhowmick
    Microelectronics Journal 125, 105467 2022

  • SELBOX TFET and DTD TFET for DC and RF/Analog Applications
    P Ghosh, B Bhowmick
    Contemporary Trends in Semiconductor Devices: Theory, Experiment and 2022

  • An analytical model of surface potential and capacitance in heterojunction SELBOX TFET
    P Ghosh, B Bhowmick
    International Journal of Numerical Modelling: Electronic Networks, Devices 2021

  • Effect of temperature in selective buried oxide TFET in the presence of trap and its RF analysis
    P Ghosh, B Bhowmick
    International Journal of RF and Microwave Computer‐Aided Engineering 30 (8 2020

  • Investigation of Electrical Characteristics in a Ferroelectric L-patterned Gate Dual Tunnel Diode TFET
    P Ghosh, B Bhowmick
    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 2020

  • The impact of donor/acceptor types of interface traps on selective buried oxide TFET characteristics
    P Ghosh, A Roy, B Bhowmick
    Applied Physics A 126, 1-7 2020

  • Effect of temperature on reliability issues of ferroelectric dopant segregated Schottky barrier tunnel field effect transistor (Fe DS-SBTFET)
    P Ghosh, B Bhowmick
    Silicon 12 (5), 1137-1144 2020

  • Deep insight into material-dependent DC performance of Fe DS-SBTFET and its noise analysis in the presence of interface traps
    P Ghosh, B Bhowmick
    AEU-International Journal of Electronics and Communications 117, 153124 2020

  • Noise behaviour of δp+ Si1−xGex layer SELBOX TFET
    P Ghosh, B Bhowmick
    Indian Journal of Physics 94 (4), 493-500 2020

  • Analysis of kink reduction and reliability issues in low‐voltage DTD‐based SOI TFET
    P Ghosh, B Bhowmick
    Micro & Nano Letters 15 (3), 130-135 2020

  • Optimization of ferroelectric SELBOX TFET and ferroelectric SOI TFET
    P Ghosh, B Bhowmick
    ECS Journal of Solid State Science and Technology 9 (2), 023001 2020

MOST CITED SCHOLAR PUBLICATIONS

  • Optimization of ferroelectric tunnel junction TFET in presence of temperature and its RF analysis
    P Ghosh, R Goswami, B Bhowmick
    Microelectronics Journal 92, 104618 2019
    Citations: 25

  • Low-frequency noise analysis of heterojunction SELBOX TFET
    P Ghosh, B Bhowmick
    Applied Physics A 124, 1-9 2018
    Citations: 22

  • Investigation of Electrical Characteristics in a Ferroelectric L-patterned Gate Dual Tunnel Diode TFET
    P Ghosh, B Bhowmick
    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 2020
    Citations: 20

  • Optimization of ferroelectric SELBOX TFET and ferroelectric SOI TFET
    P Ghosh, B Bhowmick
    ECS Journal of Solid State Science and Technology 9 (2), 023001 2020
    Citations: 12

  • Effect of temperature in selective buried oxide TFET in the presence of trap and its RF analysis
    P Ghosh, B Bhowmick
    International Journal of RF and Microwave Computer‐Aided Engineering 30 (8 2020
    Citations: 11

  • Analysis of kink reduction and reliability issues in low‐voltage DTD‐based SOI TFET
    P Ghosh, B Bhowmick
    Micro & Nano Letters 15 (3), 130-135 2020
    Citations: 11

  • Effect of temperature on reliability issues of ferroelectric dopant segregated Schottky barrier tunnel field effect transistor (Fe DS-SBTFET)
    P Ghosh, B Bhowmick
    Silicon 12 (5), 1137-1144 2020
    Citations: 10

  • Reduction of the kink effect in a SELBOX tunnel FET and its RF/analog performance
    P Ghosh, B Bhowmick
    Journal of Computational Electronics 18 (4), 1182-1191 2019
    Citations: 9

  • The impact of donor/acceptor types of interface traps on selective buried oxide TFET characteristics
    P Ghosh, A Roy, B Bhowmick
    Applied Physics A 126, 1-7 2020
    Citations: 7

  • Optimisation of electrical parameters in Fe DS-SBTFET and its application as a digital inverter
    P Ghosh, B Bhowmick
    International Journal of Electronics 106 (11), 1617-1631 2019
    Citations: 6

  • Deep insight into material-dependent DC performance of Fe DS-SBTFET and its noise analysis in the presence of interface traps
    P Ghosh, B Bhowmick
    AEU-International Journal of Electronics and Communications 117, 153124 2020
    Citations: 5

  • Electrical performance and noise assessment of vertical ferroelectric tunnel junction based SELBOX TFET
    P Ghosh
    Physica Scripta 98 (2), 025008 2023
    Citations: 3

  • Study of variability induced by random dopant fluctuation in Fe DS-SBTFET
    P Ghosh, B Bhowmick
    Microelectronics Journal 125, 105467 2022
    Citations: 3

  • Noise behaviour of δp+ Si1−xGex layer SELBOX TFET
    P Ghosh, B Bhowmick
    Indian Journal of Physics 94 (4), 493-500 2020
    Citations: 3

  • Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET
    S Kumari, P Ghosh
    Microelectronics Journal 144, 106059 2024
    Citations: 1

  • An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications
    P Ghosh, S Tripathi, WV Devi
    Applied Physics A 129 (11), 781 2023
    Citations: 1

  • Performance assessment of dielectrically modulated negative capacitance germanium source vertical tunnel FET biosensor for detection of breast cancer cell lines
    K Vanlalawmpuia, P Ghosh
    AEU-International Journal of Electronics and Communications 171, 154902 2023
    Citations: 1

  • Performance enhancement of a FET device with ferroelectric tunnel junction and its application as a biosensor
    P Ghosh, B Bhowmick
    Journal of Computational Electronics 21 (6), 1416-1424 2022
    Citations: 1

  • Performance analysis and digital application of vertical L-pattern dual tunnel diode TFET
    P Ghosh
    Microelectronics Journal 129, 105604 2022
    Citations: 1

  • An analytical model of surface potential and capacitance in heterojunction SELBOX TFET
    P Ghosh, B Bhowmick
    International Journal of Numerical Modelling: Electronic Networks, Devices 2021
    Citations: 1

Publications

[1] P. Ghosh, B. Bhowmick, “Low-frequency noise analysis of heterojunction SELBOX TFET,” Applied
Physics A. 124:838, 2018. .
[2] P. Ghosh, B. Bhowmick, “Noise behaviour of δp+ Si1-xGex layer SELBOX TFET,” Indian Journal of
Physics, pp. 1-8, 2019. .
[3] P. Ghosh, B. Bhowmick, “Optimisation of electrical parameters in Fe DSSBTFET and its application
as a digital inverter,” International Journal of Electronics, Taylor and Francis, pp. 1-15, 2019.
.
[4] P. Ghosh, B. Bhowmick, “Effect of Temperature on Reliability Issues of Ferroelectric Dopant
Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET),” Silicon, 2019.
.
[5] P. Ghosh, B. Bhowmick, “Reduction of the kink effect in a SELBOX tunnel FET and its RF/analog
performance,” Journal of Computational Electronics, pp. 1-10, 2019.
01901382-8.
[6] P. Ghosh, B. Bhowmick “Optimization of Ferroelectric SELBOX TFET and Ferroelectric SOI TFET”,
ECS Journal of Solid State Science and Technology, vol. 9, IOP science, 2020.
.
[7] P. Ghosh, B. Bhowmick, “Deep insight into material-dependent DC performance of Fe DS-SBTFET
and its noise analysis in the presence of interface traps”, AEU- International Journal of Electronics and
Communications, vol. 117, 2020. .
[8] P. Ghosh, A. Roy, B. Bhowmick, “The impact of donor/acceptor types of interface traps on selective
buried oxide TFET characteristics”, Applied Physics A, vol. 126, pp. 1-7, 2020. 10.1007/s00339-020-
03505-6.
[9] P. Ghosh, B. Bhowmick, “Effect of temperature in selective buried oxide TFET in the presence of trap
and its RF analysis,” International Journal of RF and Microwave Computer‐Aided Engineering, vol. 30,
pp. 1-9, 2020. .
[10] P. Ghosh, B. Bhowmick, “Analysis of kink reduction and reliability issues in low-voltage DTD-based
SOI TFET,” Micro & Nano Letters, vol. 15, pp. 130-135, 2020. 10.1049/.
[11] P. Ghosh, R. Goswami and, B. Bhowmick, “Optimization of ferroelectric tunnel junction TFET in
presence of temperature and its RF analysis”, Microelectronics Journal, 92, (1-5), 2019.
.
[12] P. Ghosh, B. Bhowmick, “Investigation of Electrical Characteristics in a Ferroelectric L-patterned Gate
Dual Tunnel Diode TFET”, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, pp.
1-6, 2020. 10.1109/