RAJESH KUMAR
@galgotiacollege.edu
ASSISTANT PROFESSOR
galgotia college of engg and technology
RESEARCH INTERESTS
RFIC, MMIC PA
Scopus Publications
Scholar Citations
Scholar h-index
Scopus Publications
Rajesh Kumar, Indresh Kumar, Abhimanyu Kumar Singh, and Sheo K. Mishra
Elsevier BV
Priya Jasrotia, Raj Kumar, Indra Sulania, Ratnesh K Pandey, Rajeev Gupta, Ajay Singh Verma, Ashish Kumar, and Tanuj Kumar
Elsevier BV
Shweta Bharti, Balwant Singh, Sanket Kumar, Rajesh Kumar, and Jatinder Kumar
Springer Science and Business Media LLC
Shilpa Rana, M. Bhuyan, S. K. Patra, and Raj Kumar
American Physical Society (APS)
Rajesh Kumar, Yuhan Wang, Nikolas Cruz Camacho, Arvind Kumar, Jacquelyn Noronha-Hostler, and Veronica Dexheimer
American Physical Society (APS)
Praveen K. Yadav, Raj Kumar, and M. Bhuyan
IOP Publishing
Abstract In this theoretical study, we have derived a simplified analytical expression for the binding energy per nucleon as a function of density and isospin asymmetry within the relativistic mean-field model. We have generated a new parameterization for the density-dependent DD-ME2 parameter set using the Relativistic-Hartree-Bogoliubov approach. Moreover, this work attempts to revisit the prior polynomial fitting in Kumar A. et al. Phys. Rev. C, 103 (2021) 024305 for the non-linear NL3 force parameter to provide a simplified set of equations for the energy density functional which is used for calculating the surface properties of finite nuclei. The current study improves the existing fitting procedure by effectively proposing a simpler model that provides comparably precise results while lowering the computational expense. To study the surface properties of finite nuclei with these parameterizations, we have adopted the coherent density fluctuation model, which effectively translates the quantities of nuclear matter from momentum space to coordinate space at local density. The isospin properties, such as symmetry energy and its surface and volume components, slope parameter, finite nuclear incompressibility, and surface incompressibility for even-even nuclei, are calculated for different mass regions. Moreover, we have studied the effect of density, weight function, and choice of relativistic force parameters on the surface properties. The significance of this work will help to determine the properties of nuclei along the nuclear landscape and can facilitate an improved understanding of the island of stability, heavy-ion collision, and nucleosynthesis, among others.
Mansi Garg, Anupamjeet Kaur, Bhupesh Goyal, Jayanti Rawat, and Rajesh Kumar
Elsevier BV
N. Jain, M. Bhuyan, and Raj Kumar
American Physical Society (APS)
Mayank Maan, Hemant Goyal, Shubhi Joshi, Panchali Barman, Sheetal Sharma, Rajesh Kumar, and Avneet Saini
Elsevier BV
Priya Jasrotia, Bhanu Priya, Raj Kumar, Indra Sulania, Rajeev Gupta, Ajay Singh Verma, D. Kanjilal, and Tanuj Kumar
Elsevier BV
Rajesh Kumar and Iniyan Thiruselvam
Springer Nature Switzerland
Varun Kumar, Rajesh Kumar, Sachin Gupta, K.K. Kataria, Sumit Chaudhary, and Sonia Dangi
Informa UK Limited
Prabhat Ranjan, Rajesh Kumar, and R. S. Walia
Springer Science and Business Media LLC
Bhanu Priya, Priya Jasrotia, Indira Sulania, Vinamrata Singh, Raj Kumar, and Tanuj Kumar
The Electrochemical Society
In this study, we investigate the effect of nitrogen (16 keV N+) ion implantation on V2O5 thin films with varying thicknesses, focusing on their structural, compositional, and optical characteristics. Through X-ray diffraction, we reveal the coexistence of orthorhombic and tetragonal phases, while UV–vis spectroscopy determines the band gap. Atomic force microscopy unveils the intriguing surface morphology, with the thickest film displaying high smoothness. Notably, grain formation and growth dynamics are intricately linked to roughness (α) and fractal dimension (Df) calculations. Additionally, wetting properties are connected to fractal growth in ion-implanted films. This work underscores the stable optical band gap of V2O5 thin films for optical applications and offers insights into managing wetting behaviors in nanofluidics through fractal patterns, potentially impacting nanotechnology and material engineering.
Jayesh Kumar, Pushpendra Singh, and Rajesh Kumar
Wiley
AbstractThe thermal conductivity of phase change material (PCM) is one of the essential variables for the fast heat transfer process for latent heat energy storage (LHES) units. The thermal characteristics of a novel LHES rectangular enclosure based on multiple chambers separated by insulating and rigid walls are numerically investigated. The enthalpy‐porosity strategy supported by the finite volume method is implemented to perform the simulation. Simulation results exhibited that thermal charging and discharging performance was enhanced without affecting the system's total heat storage capacity by creating multiple chambers. Liquid fraction, mean temperature, heat flux, contours of liquid fraction and temperature of PCM are demonstrated as a function of the melting time. The thermal charging time of PCM is diminished by increasing the number of chambers. Although, the consequences of the number of chambers on the melting time of PCM are diminished by surging the number of chambers. It was also found that continuously raising the heating temperature is not beneficial for reducing the total time of liquid fraction during melting. Thermal discharging performance is poor than that of the thermal charging process.
Jyoti Dhatwalia, Amita Kumari, Ankush Chauhan, Khalid Mujasam Batoo, Antara Banerjee, Arunkumar Radhakrishnan, Shabnam Thakur, Ishita Guleria, Sohan Lal, Suresh Ghotekar,et al.
Springer Science and Business Media LLC
Ankush Chauhan, Ritesh Verma, C. Gopal Krishnan, R. Jayavel, Khalid Mujasam Batoo, Sajjad Hussain, Rajesh Kumar, and Pradeep Kumar
Springer Science and Business Media LLC
Rajesh Kumar, Shatish K. Gautam, Ashwani Kumar, Ravi. K. Arya, Maifuz Ali, and P.P Singh
IEEE
This paper presents the design of a high-gain holographic antenna using microstrip aperture feed for beam scanning applications. Two holographic surfaces are designed and excited to get the radiation pattern at two different angles, 0 degrees and 20 degrees, with a high-gain of 20. 5dBi and side lobe level (SLL) of 15. 5dB. Both holographic surfaces with aperture antennas effectively work from 15GHz to 20GHz, which is wideband. The proposed antenna could be helpful for satellite and modern wireless communication systems.
Naveen Khatak, Prabhakar Kaushik, and Rajesh Kumar
IEEE
Naveen Khatak, Prabhakar Kaushik, and Rajesh Kumar
Springer Science and Business Media LLC
Vikas Kumar, Rajesh Kumar, and Harmesh Kumar
Informa UK Limited
Bhanu Priya, Priya Jasrotia, Arun Kumar, Vinamrita Singh, Jehova Jire L. Hmar, Raj Kumar, Pawan Kumar Kulriya, and Tanuj Kumar
Frontiers Media SA
This report investigates the effect of substrate and nitrogen (16 keV N+) ion implantation on the structural, morphological, compositional, and electrical properties of V2O5 thin films which are grown by thermal evaporation on various substrates, including glass, Si, and sapphire (termed V2O5:Gl, V2O5:Si, and V2O5:Sp, respectively). Structural analysis showed the formation of the mixed (α, and β-V2O5) phases on all substrates; however, the β-V2O5 phase is highly dominant in the V2O5:G and V2O5:Si samples. A deformation in the β-phase of V2O5 thin film under ion implantation-induced strain results in a change of crystallite size. Irradiation suppresses XRD peaks in relative intensities, indicating partial amorphization of the film with defect formation. Microstructural analysis confirmed the formation of uniform-sized nanorods for V2O5:Si, whereas isolated crystallites were formed for other types of substrates. Thermal conductivity may influence the size and shapes of V2O5 crystallite forms on different surfaces. Silicon absorbs heat more effectively than sapphire or glass, resulting in nanorod formation. A decrease in optical bandgap and electrical conduction has been observed due to increased oxygen vacancies, induced electron scattering, and trapping centres on N+ implantation. The present study thus offers the unique advantage of simultaneous reduction in optical band-gap and conductance of V2O5 thin films, which is important for optoelectronic applications.
Jayesh Kumar, Pushpendra Singh, and Rajesh Kumar
Elsevier BV
Shubhpreet Kaur, Manoj K. Sharma, and Raj Kumar
Elsevier BV
Leelavati, Rajesh Kumar, and Ravi Kumar
Springer Science and Business Media LLC