RANJITH R

@gces.edu.in

ASSISTANT PROFESSOR AND ELECTRONICS AND COMMUNICATION ENGINEERING
GOVERNMENT COLLEGE OF ENGINEERING SRIRANGAM

RANJITH R


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https://researchid.co/ranjithmtm

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, Signal Processing, Electronic, Optical and Magnetic Materials, Computer Vision and Pattern Recognition
9

Scopus Publications

Scopus Publications

  • Impact of carrier tunneling in collector-base junction on the performance of tunnel junction transistor laser
    Ranjith R, Piramasubramanian S, Ganesh Madhan M
    Physica Scripta, 2025
    Carrier tunneling is a dominant effect in Tunnel Junction Transistor Lasers (TJTL) when biased in the active region. Modulation of the carrier injection during tunneling process in TJTL has been observed with time-varying input current and reverse-bias junction voltage. The expression for terminal currents in a tunnel junction transistor laser is derived by considering the tunneling phenomenon at the collector-base junction, biased in the active region for the first time. The DC and AC characteristics of the tunnel junction transistor laser are analyzed numerically by solving the rate equation model with terminal currents under a common-base configuration. An increase in input emitter threshold from 26.3 mA at V CB = 0 V to 39.2 mA at V CB = 6 V is observed. The collector current increases from 7.2 mA to 16.7 mA with an increase in reverse-biased collector-base junction voltage from 0 V to 8 V, at an input emitter current of 36 mA. A reduction in optical gain and quantum well carrier density are observed with the increase in reverse-biased collector-base junction voltage.
  • Effect of shorter section length on the performance of bisection gain lever transistor laser
    R. Ranjith, S. Piramasubramanian
    Optical and Quantum Electronics, 2024
  • Numerical simulation and analysis of dual base transistor laser
    Ramakrishnan Ranjith, Shanmugasundaram Piramasubramanian, Muthu Ganesh Madhan
    Microwave and Optical Technology Letters, 2022
    In this work, characteristics of dual base transistor laser are numerically analyzed for the first time. Active base region of the transistor laser is split into two unequal regions composing of shorter and longer sections, which are biased separately. Static characteristics of transistor laser are evaluated using a rate equation model, which reveals switching action in output optical power for a longer section base current of 9.2 mA with unpumped shorter section. Hysteresis behavior in the optical output is observed for the longer section input current till 1.6 mA. Optical bistable characteristics are studied for various values of gain (longer) and absorber (shorter) section currents. Further slope efficiency is evaluated using P‐I characteristics, before the onset of bistability, for gain lever features under common emitter (CE) configuration. A maximum gain lever of 4.5 dB is observed with the longer section bias current of 1.3 mA.
  • Darlington Based 8T CNTFET SRAM Cells with Low Power and Enhanced Write Stability
    M. Elangovan, D. Karthickeyan, M. Arul Kumar, R. Ranjith
    Transactions on Electrical and Electronic Materials, 2022
  • Effect of number of quantum wells on modulation and distortion characteristics of transistor laser
    R. Ranjith, S. Piramasubramanian, M. Ganesh Madhan
    Optics and Laser Technology, 2022
  • Effect of Intrinsic Base Resistance on Rise Time of Transistor Laser
    R. Ranjith, K. Kaviyarasi
    Lecture Notes in Electrical Engineering, 2022
  • PDP Analysis of CNTFET Full Adders for Single and Multiple Threshold Voltages
    M. Elangovan, R. Ranjith, S. Devika
    Lecture Notes in Electrical Engineering, 2021
  • Distortion analysis of 1.3 µm AlGaInAs/InP transistor laser
    R. Ranjith, S. Piramasubramanian, M. Ganesh Madhan
    Springer Proceedings in Physics, 2017
  • Anomaly detection using DBSCAN clustering technique for traffic video surveillance
    R. Ranjith, J. Joshan Athanesious, V. Vaidehi
    Icoac 2015 7th International Conference on Advanced Computing, 2016
    Detecting anomalies such as rule violations, accidents, unusual driving and other suspicious action increase the need for automatic analysis in Traffic Video Surveillance (TVS). Most of the works in Traffic rule violation systems are based on probabilistic methods of classification for detecting the events as normal and abnormal. This paper proposes an un-supervised clustering technique namely Novel Anomaly Detection-Density Based Spatial Clustering of Applications with Noise (NAD-DBSCAN) which clusters the trajectories of moving objects of varying sizes and shapes. A trajectory is said to be abnormal if the event that never fit with the trained model. Epsilon (Eps) and Minimum Points (MinPts) are essential parameters for dynamically calculating the sum of clusters for a data point. The proposed system is validated using benchmark traffic dataset and found to perform accurately in detecting anomalies.