Rustamjon Rakhimov Gulomjanovich
@nammti.uz
Department of Information Technology
Namangan Institute of Engineering and Technology
RESEARCH, TEACHING, or OTHER INTERESTS
Condensed Matter Physics, Computer Engineering, Mechanical Engineering, Computer Science
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
U. I. Erkaboev and R. G. Rakhimov
Springer Science and Business Media LLC
A. M. Sultanov, , E. K. Yusupov, R. G. Rakhimov, , and
Sumy State University
U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev, U. M. Negmatov, and N. A. Sayidov
Springer Science and Business Media LLC
Ulugbek I. Erkaboev and Rustamjon G. Rakhimov
V. N. Karazin Kharkiv National University
In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism has been developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a non-parabolic dispersion law are investigated. The proposed theory investigated the results of experiments of a narrow-band quantum well (InxGa1-xSb).
U.I. Erkaboev and R.G. Rakhimov
Elsevier BV
U. I. Erkaboev, N. A. Sayidov, U. M. Negmatov, J. I. Mirzaev, and R. G. Rakhimov
EDP Sciences
For the first time, the influence of temperature and a transverse strong magnetic field on the oscillations of the density of energy states is studied in the conduction band of heterostructures with quantum wells HgCdTe/CdHgTe. Analytical expressions are derived for oscillations of the density of states in quantum-dimensional heterostructural materials in the presence of transverse quantizing magnetic fields with a parabolic dispersion law. A new mathematical model has been developed for calculating the temperature dependence of the density of states oscillations in nanosized heterostructural materials under the action of a transverse quantizing magnetic field.
U. I. Erkaboev, N. A. Sayidov, U. M. Negmatov, R. G. Rakhimov, and J. I. Mirzaev
EDP Sciences
This article investigated the temperature dependence of the width band gap in InxGa1-xAs quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/InxGa1-xAs heterostructures based on a InxGa1-xAs quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures.
Ulugbek Erkaboev, Rustamjon Rakhimov, Jasurbek Mirzaev, Nozimjon Sayidov, Ulugbek Negmatov, and Murodjon Abduxalimov
AIP Publishing
Ulugbek Erkaboev, Rustamjon Rakhimov, Jasurbek Mirzaev, Nozimjon Sayidov, Ulugbek Negmatov, and Abdulla Mashrapov
AIP Publishing
G Gulyamov, U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev, and N. A. Sayidov
World Scientific Pub Co Pte Ltd
In this work, a new model has been developed for calculating the effect of a quantizing magnetic field on the temperature dependence of the two-dimensional combined density of states in direct-gap heterostructures with quantum wells. The temperature dependence of the oscillations of the two-dimensional combined density of states of the quantum well is explained by the thermal smearing of the Gaussian distribution function in a strong magnetic field. Based on the proposed new models, the Landau levels of charge carriers in a direct-gap quantum well are determined in a wide temperature range. The experimental results were interpreted using the oscillations of the combined density of states of the quantum well in a quantizing magnetic field.
U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov, and J. I. Mirzaev
Springer Science and Business Media LLC
Ulugbek Erkaboev, Rustamjon Rakhimov, Jasurbek Mirzaev, Ulugbek Negmatov, and Nozimjon Sayidov
World Scientific Pub Co Pte Ltd
In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism has been developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) [Formula: see text] at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a nonparabolic dispersion law are investigated. The proposed theory investigated the results of experiments of a narrow-band quantum well (InxGa[Formula: see text]Sb).
U. I. Erkaboev, G. Gulyamov, and R. G. Rakhimov
Springer Science and Business Media LLC
Ulugbek I. Erkaboev, Ulugbek M. Negmatov, Rustamjon G. Rakhimov, Jasurbek I. Mirzaev, and Nozimjon A. Sayidov
Chaoyang University of Technology (IJASE)
In this article we investigated the effects of quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconductor materials. It is shown that the Fermi energy of a nanoscale semiconductor material in a quantized magnetic field is quantized. The distribution of the Fermi-Dirac function is calculated in low-dimensional semiconductors at weak magnetic fields and high temperatures. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.
U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev, R. G. Rakhimov, and N. A. Sayidov
World Scientific Pub Co Pte Ltd
This article investigated the effects of a quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconductor materials. It is shown that the Fermi energy of a nanoscale semiconductor material in a quantizing magnetic field is quantized. The distribution of the Fermi–Dirac function is calculated in low-dimensional semiconductors at weak magnetic fields and high temperatures. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.
U. I. Erkaboev, R. G. Rakhimov, and N. A. Sayidov
World Scientific Pub Co Pte Lt
The calculation of the coefficients of magneto-optical absorption in semiconductors at different temperatures and pressures is carried out. A formula for the temperature dependence of the oscillations of the combined density of states by the Kane dispersion law is obtained. Mathematical modeling has been carried out that determines the magneto-optical absorption coefficient in semiconductors in the presence of external influences. A new method for determining the magneto-optical absorption coefficient in semiconductors in the presence of pressure and temperature is proposed. The correspondence of simulation results with experimental data is shown.
G. Gulyamov, U. Erkaboev, N. Sayidov and R. Rakhimov
ABSTRACT
A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.
U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev, and R. G. Rakhimov
World Scientific Pub Co Pte Lt
Electrical conductivity oscillations, magnetic susceptibility oscillations and electronic heat capacity oscillations for narrow-gap electronic semiconductors are considered at different temperatures. A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the bandgap of narrow-gap semiconductors. The theory is compared with the experimental results of [Formula: see text]. A theory is constructed of the temperature dependence of the magnetic susceptibility oscillations for narrow-gap electronic semiconductors. Using these oscillations of magnetic susceptibility, the cyclotron effective masses of electrons are determined. The calculation results are compared with experimental data. The proposed model explains the experimental results in [Formula: see text] at different temperatures.
G. Gulyamov, , U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev, , , and
Sumy State University
Oscillations of longitudinal electrical conductivity, oscillations of magnetic susceptibility and oscilla- tions of electronic heat capacity for narrow-gap electronic semiconductors are considered. A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semi- conductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the os- cillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The theory is compared with the experimental results of Bi 2 Se 3 . A theory is constructed of the temperature depend- ence of the magnetic susceptibility oscillations for narrow-gap electronic semiconductors. Using these oscillations of magnetic susceptibility, the cyclotron effective masses of electrons are determined. The calcula- tion results are compared with experimental data. The proposed model explains the experimental results in p -Bi 2 – x Fe x Te 3 at different temperatures.