Mustafa SHQAIR
@laplace.univ-tlse.fr
LAboratoire PLasma et Conversion d'Energie (LAPLACE)
I am currently a postdoctoral researcher at "LAPLACE laboratory", analyzing the reliability and limits of the use of SiC MOSFET transistors in extreme accidental conditions by applying Multiphysics simulations.
I took my Ph.D. degree from "École normale supérieure Paris-Saclay University". My doctoral work, conducted at "Laboratoire SATIE / Université Gustave Eiffel (ex IFSTTAR)", focused on interpreting and modeling the degradations of topside power electronics components from a physiochemical-microstructural view (2022).
I studied for my Bachelor's and Master's degrees in Physical & Materials Chemistry at the "Lebanese University" (2014-2019). Starting from the second semester of my 2nd year of my Master's studies, I launched my journey in France by undergoing an internship at "Laboratoire SATIE / IFSTTAR" to investigate the role of temperature and temperature cycles on the interface energy between thin aluminum film grains in semiconductors (2019). Through the 1st
EDUCATION
Ph.D. from École normale supérieure Paris-Saclay University
Field of study: Physicochemical & Microstructural Reliability Analysis of Metallic Connections in Semiconductors
RESEARCH, TEACHING, or OTHER INTERESTS
Materials Science, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Electronic, Optical and Magnetic Materials
Scopus Publications
Scholar Citations
Scholar h-index
Scopus Publications
M. Shqair, E. Sarraute, T. Cazimajou, and F. Richardeau
Elsevier BV
Ayda Halouani, Zoubir Khatir, Mustafa Shqair, Ali Ibrahim, and Pierre-Yves Pichon
Springer Science and Business Media LLC
Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Ayda Halouani, and Mounira Berkani
Elsevier BV
A. Halouani, M. Shqair, Z. Khatir, A. Ibrahim, and M. Ouhab
Elsevier BV
M. Shqair, Z. Khatir, A. Ibrahim, M. Berkani, A. Halouani, and T. Hamieh
Elsevier BV
M. Shqair, Z. Khatir, A. Ibrahim, M. Berkani, A. Halouani, and T. Hamieh
IEEE
Insulated-gate bipolar transistors (IGBTs) are widely used components in power electronics applications. Upon operation, the difference in thermal expansion coefficients of materials composing the upper metallic parts causes thermal fatigue. The latter leads to degradations at metallic topside interconnections through the formation of cracks [1]. This paper focuses on a new physicochemical-microstructural approach for modeling the crack propagation at the contact interface between wires and metallization layers in a power module to answer the following question: what is the preferential crack path along with the interface, and what are the influencing parameters? The model is based on a cohesive zone model (CZM) approach [2] in the vicinity of the contact, used for predicting the crack propagation pathway in a small interfacial region on either sides of a contact. To achieve such predictability, CZM parameters are linked to physicochemical-microstructural properties, i.e., the crack propagation is interpreted at the metallic contact zone based on this linkage. Therefore, this work’s originality lies in combining a fracture mechanics approach and a physicochemical-microstructural one.