Sandeep V
@kalasalingam.ac.in
Post-doctoral research fellow in Department of ECE
Kalasalingam Academy of Research and Education
RESEARCH INTERESTS
GaN High Electron Mobility Transistors (HEMTs), Metal Oxide Semiconductor HEMTs, semiconductor modeling and simulation, integrated microelectronics
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
N. R. Saritha, J. Charles Pravin, V. Sandeep, Josephine Selle J, and V. N. Ramakrishnan
Springer Science and Business Media LLC
S. Ashok Kumar, J. Charles Pravin, V. Sandeep, and R. Sridevi
Elsevier BV
V. Sandeep, J. Charles Pravin, and S. Ashok Kumar
IEEE
This article presents an approach for implementing a Cylindrical Nanowire Single Channel Field Effect Transistor (SCFET) without the use of doping in the channel region (dopingless). Using an appropriate work function for the outer metal electrode and the Charge Plasma (CP) process, the n-type semiconductor is produced, where a single channel is used. By placing the gate length (LG) at 1$\\theta$ nm, with channel and oxide thicknesses of 5 and 1 nm each, Sentaurus Technology Computer-Aided Design (TCAD) simulations are employed to compare the electrical properties of the proposed device to a normally undoped double gate MOSFET. Instead of two channels with identical spacing among vertical stackings, the NWSCFET has a single narrow channel. Utilising the linked Drift-Diffusion (DD) technique and Shockley-Read-Hall Recombination (SRH) method, the device performance has been quantitatively assessed. In accordance with the charge plasma and single-channel approach, the current obtained for the single-channel device has almost been doubled when compared with a Cylindrical Gate-All-Around double-channel NW MOSFET. In addition to the above parameters, the Short Channel Effects (SCE) have been reduced up to a certain extent.
J. Charles Pravin, G. Anusha, Ch Tushara Supriya, P.B.V.N. Sai Sumanth, V Sandeep, and Josephine Selle J
IEEE
This article provides a current voltage model for a ferroelectric material made of Lithium Niobate (LiNbO3) used in a negative capacitance field-effect transistor (NCFET). The influence of various device dimensions like doping concentrations, ferroelectric thicknesses on device parameters such as potential and IV characteristics has been described. SiO2 is incorporated as the dielectric. Sentaurus Technology Computer Aided Design (TCAD) is used to examine the device. In addition, the effects of ferroelectric thickness and channel doping concentration on NCFET device simulation and the hysteresis window are thoroughly investigated. For enhanced polarization switching, NCFETs use a ferroelectric layer. For voltage amplification, a Lithium Niobate (LiNbO3) layer is used within the transistor's gate. This paper proposes an I-V model for NCFETs using LiNbO3 as the ferroelectric material, as well as the polarization values produced from it. The sub-threshold swing was attained at about 45 mV/dec for a low ferroelectric thickness of 10 nm, along with improved hysteresis behavior. The device's current drive and threshold voltage have also been significantly improved, demonstrating that it is a suitable material for low-power applications.
V. Sandeep and J. Charles Pravin
Elsevier BV
V. Sandeep, Saravanan Kondappan, Amir Anton Jone, and Raj Barath S.
IGI Global
In the last decade, many researchers have proposed several models of classification algorithms for enhancing the accuracy performance of IDSs. However, there is a minor issue arising in the classifier's incapability to process high-dimensional data. Using several classifiers always outperforms a single classifier's performance. This paper proposes a novel intrusion detection system by classifying data with SVM as well as C4.5 decision tree algorithm. The NSL-KDD dataset is first preprocessed with principal component analysis (PCA) and later feature selected with an improved particle swarm optimization (I-PSO). This framework improved the time consumption and inaccurate feature selection issues in other methodologies. Upon simplifying features more effectively, the outcomes display an excellent agreement with the conventional PSO techniques and their results, and also produce enhanced outcomes when compared to only single classifier. The results demonstrate better performance when subject to different attack-scenarios and can be used for enterprise network security applications.
V. Sandeep, , J. Charles Pravin, and
Sumy State University
V. Sandeep, J. Charles Pravin, A. Ramesh Babu, and P. Prajoon
IEEE
An analytical model is used for evaluating the DC characteristics of AlGaN/GaN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) having an AlInN back-barrier. The behavior of various parameters such as charge density, carrier concentration, drain current, trans-conductance, and gate capacitance of the device have been computed by using Cubic Spline Interpolation (CS1) model. Different high-k dielectric materials like Aluminum oxide ($Al_{2}O_{3}$) and Zirconium dioxide (ZrO2) were considered as oxide layers. A comparison is performed between the IV characteristics of $Al_{2}O_{3}$ and ZrO2 MO S-HEMT with the conventional SiO2 device by deriving its mathematical dependence. Due to the high-quality interface between ZrO2 and the AlGaN barrier layer, the proposed structure has shown to demonstrate excellent current drives. The modeled outcomes match exactly with the experimental results from literature, using the cubic spline interpolation. The proposed device displayed a 28% and 18% enhancement in drain current for ZrO2 and $Al_{2}O_{3}$ dielectrics respectively. Due to its high current drive and trans-conductance factor, ZrO2 could be considered as an efficient alternative for high power applications like high energy RF acceleration and Radar.
V. Sandeep, J. Charles Pravin, A. Ramesh Babu, and P. Prajoon
Institute of Electrical and Electronics Engineers (IEEE)
The dc characteristics of AlGaN/gallium nitride (GaN) metal–oxide–semiconductor-high electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer has been studied here. An analytical model is proposed for evaluating the charge density (<inline-formula> <tex-math notation="LaTeX">$\\sigma _{{\\mathrm {tot}}}$ </tex-math></inline-formula>), carrier concentration (<inline-formula> <tex-math notation="LaTeX">${n}_{{\\mathrm {S}}}$ </tex-math></inline-formula>), drain current (<inline-formula> <tex-math notation="LaTeX">${I}_{{\\mathrm {D}}}$ </tex-math></inline-formula>), and transconductance (<inline-formula> <tex-math notation="LaTeX">${g}_{{\\mathrm {m}}}$ </tex-math></inline-formula>) of the device by incorporating Hafnium oxide (HfO<sub>2</sub>) as a high-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> dielectric layer. The charges created between the oxide and the AlGaN barrier layer influence the enhancement of carrier concentration of up to <inline-formula> <tex-math notation="LaTeX">$6.2\\times 10 ^{13}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{-2}$ </tex-math></inline-formula>, at the two-dimensional electron gas (2DEG). The AlInN back-barrier increases the conduction band (CB) level of the GaN buffer and eliminates the confinement problems near the channel. By deriving the mathematical dependence of these parameters, this device demonstrated a positive threshold shift and a high current drive of 880 mA/mm. Cubic spline interpolation (CSI) technique is employed here to model the parameters in a more precise manner. The outcomes are evidence that the device could be a potential solution for high power switching as well as microwave applications.
J. Charles Pravin, K. Kirtika, and V. Sandeep
IEEE
In this paper, the sheet carrier concentration and sheet charge density arising from the polarization effects in the AlGaNlAlN hetero-structure is evaluated. The two dimensional electron gas (2DEG) formed in the heterojunction region of the HEMT increaseswith increase in sheet carrier concentration. The concentration is calculated by varying the aluminium concentration at the range of 0< x < 1. Polarization effects are calculated in the 2DEG area of the High electron mobility transistor with respect to varying concentrations of Al in the GaN layer. High sheet carrier is attained at an Al concentration range of 0< x <0.6. The mathematical analysis of sheet carrier concentration is done using MATLAB.