Shaili Sett

@iisc.ac.in

Post doctoral fellow, Physics
Indian Institute of Science, Bangalore, INDIA.

Shaili Sett


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https://researchid.co/shaili
I have been working as a post-doctoral fellow since August 2019 in the Quantum Materials and Devices Group under the guidance of Prof. Arindam Ghosh, in the Department of Physics, Indian Institute of Science, Bangalore. During my tenure, I was awarded the DST-Govt. of India Post-Doctoral Fellowship in Nanoscience and Technology for the term Dec 2019 to Jan 2021. Currently, I work on electronic transport in twisted 2D materials and on light-matter interaction in van der Waals heterostructures.

EDUCATION

 14/08/2019-current: Post-Doctoral Fellow (Supervisor: Prof. Arindam Ghosh)
Indian Institute of Science, Bangalore, India.

 1/08/2013-30/07/2019: Ph. D in Experimental Physics (Supervisor: Prof. A. K Raychaudhuri)
S. N. Bose National Centre for Basic Sciences, Kolkata, India.
Thesis submission: 24/08/2019
Thesis defense (Viva-voce): 08/09/2021
Provisional degree: 10/09/2021

 1/08/2011-1/06/2013: M. Sc in Physics
Indian Institute of Technology, Madras, India.
CGPA: 8.38/10 (First Class)

 1/08/2008-30/06/2011: B. Sc in Physics
St. Xavier’s College, (Calcutta University), Kolkata, India.
CGPA: 7.71/10 (First class)

RESEARCH INTERESTS

Quantum materials, nanotechnology, graphene, 2D materials, opto-electronics, van der Waals heterostructures
24

Scopus Publications

289

Scholar Citations

11

Scholar h-index

12

Scholar i10-index

Scopus Publications

  • Moiré-Engineered Ferroelectric Transistors for Nearly Trap-Free, Low-Power, and Nonvolatile 2D Electronics
    Arup Singha, Shaili Sett, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh, Rahul Debnath
    ACS Nano, 2026
    Long-range moiré patterns in twisted WSe2 enable a built-in, moiré-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers compelling means to enable ultralow-voltage and non-volatile electronic functionality in two-dimensional (2D) materials; however, achieving stable polarization control without charge trapping has remained a persistent challenge. Here, we demonstrate a moiré-engineered ferroelectric field-effect transistor (FeFET) utilizing twisted WSe2 bilayers that leverage atomically clean van der Waals interfaces to achieve efficient polarization–channel coupling and trap-suppressed, ultralow-voltage operation (subthreshold swing of 64 mV dec–1). The device exhibits a stable non-volatile memory window of 0.10 V and high mobility, exceeding the performance of previously reported 2D FeFET and matching that of advanced silicon-based devices. In addition, capacitance–voltage spectroscopy, corroborated by self-consistent Landau–Ginzburg–Devonshire modeling, indicates ultrafast ferroelectric switching (∼0.5 μs). These results establish moiré-engineered ferroelectricity as a practical and scalable route toward ultraclean, low-power, and non-volatile 2D electronics, bridging atomistic lattice engineering with functional device architectures for next-generation memory and logic technologies.
  • Moiré Ferroelectricity-Enhanced Optoelectronic Response in an all-2D van der Waals Hybrid
    Navkiranjot Kaur Gill, Shaili Sett, Rahul Debnath, Arup Singha, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh
    Small, 2025
    Sliding ferroelectricity is an emergent phenomenon observed in twisted bilayers of boron nitride and twisted homobilayers of transition metal dichalcogenides (TMDs) arranged in a rhombohedral stacking configuration. While the signature of such a phenomenon is observed in several electronic devices through hysteretic transfer characteristics, nonlocality etc., the strong sensitivity of the TMDs to optical irradiation have neither been explored nor exploited in an optoelectronic architecture that also hosts sliding ferroelectricity. In this work, an edge‐contacted encapsulated graphene‐twisted WSe2 heterostructure is created, in a dual‐gated field‐effect configuration to study the impact of the moiré polar domains on the optical response of the two dimenstional (2D) hybrid. A specific detectivity of 5.2 × 1013 Jones which is among the highest in all‐2D optoelectronic architectures is observed. This is attributed to the polarization‐induced electric field that facilitates charge‐transfer across the graphene‐ferroelectric interface. It is argued that compared to non‐ferroelectric homobilayers and monolayers, the photoresponse in the minimally twisted layers is significantly enhanced due to large exciton lifetimes, staggered band alignment and a polarization‐induced in‐built electric field. This work highlights the functionality of the 2D ferroelectric, acting both as the photosensitive layer while effectively controlling the charge‐transfer dynamics.
  • van der Waals Hybrids for Ferroelectric Device Application
    Shaili Sett, Tathagata Paul, Arindam Ghosh
    Annual Review of Materials Research, 2025
    The evolution of ferroelectric devices is driven by advancements in materials science, device physics, and engineering. However, depolarization fields and interfacial disorder limit the scaling performance, endurance, and reliability of conventional thin-film ferroelectrics. van der Waals (vdW) ferroelectric materials exhibiting novel properties at the atomic scale are interesting candidates for mitigating the aforementioned issues, thereby allowing for improved ferroelectric device performance. In this review, we discuss the unconventional origins of both spontaneous and artificial polarization, along with their associated switching mechanisms, in polar and nonpolar vdW ferroelectric crystals and heterostructures. Recent device architectures utilizing vdW ferroelectricity are reviewed with a specific focus on emerging memory, steep-slope logic, and in-memory computing applications. We conclude with an overview of the opportunities and challenges for vdW ferroelectrics related to scalability, endurance, device integration, and growth, highlighting recent advances toward manifesting next-generation electronics.
  • Ultralow Thermal Conductivity Approaching the Disordered Limit in Crystalline TlCuZrSe3
    Rohit Kumar Rohj, Animesh Bhui, Shaili Sett, Arindam Ghosh, Kanishka Biswas, D. D. Sarma
    Chemistry of Materials, 2025
    A comprehensive understanding of thermal transport is crucial for many applications, including heat dissipation systems, thermal barrier coatings, and harnessing potentials of thermoelectric materials. Here, we report an ultralow thermal conductivity, κ, in a p-type layered chalcogenide, TlCuZrSe3. Our investigation reveals that the anisotropic values of κ in two perpendicular directions in this compound vary between 0.88 and 0.41 Wm–1K–1 and 1.15–0.62 Wm–1K–1, respectively, over the temperature range of 295–600 K. The low-temperature specific heat data could only be explained by considering Einstein oscillator terms in addition to the conventional Debye model-based contributions, consistent with the presence of localized Tl1+ rattlers. The unique anisotropic crystal structure of TlCuZrSe3 and the rattling of Tl1+ ions lead to the generation of low-frequency phonons. These relatively flat optical phonon modes hybridize with acoustic phonons, giving rise to strong anharmonicity and phonon scattering channels. Raman spectroscopy confirms that these low-frequency phonon modes have extremely short lifetimes (∼1 ps), explaining the ultralow κ values, approaching the disordered limit, in this highly crystalline material.
  • Twist-Controlled Ferroelectricity and Emergent Multiferroicity in WSe2 Bilayers
    Yasir Hassan, Budhi Singh, Minwoong Joe, Byoung‐Min Son, Tien Dat Ngo, Younggeun Jang, Shaili Sett, Arup Singha, Rabindra Biswas, Monika Bhakar, Kenji Watanabe, Takashi Taniguchi, Varun Raghunathan, Goutam Sheet, Zonghoon Lee, Won Jong Yoo, Pawan Kumar Srivastava, Changgu Lee
    Advanced Materials, 2024
    Recently, researchers have been investigating artificial ferroelectricity, which arises when inversion symmetry is broken in certain R‐stacked, i.e., zero‐degree twisted, van der Waals (vdW) bilayers. Here, the study reports the twist‐controlled ferroelectricity in tungsten diselenide (WSe2) bilayers. The findings show noticeable room temperature ferroelectricity that decreases with twist angle within the range 0° < θ < 3°, and disappears completely for θ ≥ 4°. This variation aligns with moiré length scale‐controlled ferroelectric dynamics (0° < θ < 3°), while loss beyond 4° may relate to twist‐controlled commensurate to non‐commensurate transitions. This twist‐controlled ferroelectricity serves as a spectroscopic tool for detecting transitions between commensurate and incommensurate moiré patterns. At 5.5 K, 3° twisted WSe2 exhibits ferroelectric and correlation‐driven ferromagnetic ordering, indicating twist‐controlled multiferroic behavior. The study offers insights into twist‐controlled coexisting ferro‐ordering and serves as valuable spectroscopic tools.
  • Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides
    Shaili Sett, Rahul Debnath, Arup Singha, Shinjan Mandal, K. M. Jyothsna, Monika Bhakar, Kenji Watanabe, Takashi Taniguchi, Varun Raghunathan, Goutam Sheet, Manish Jain, Arindam Ghosh
    Nano Letters, 2024
    At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D ∼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.
  • Non-monotonic Thermal Conductivity of FAxMA1-xPbI3 Achieving Ultralow Values: The Role of Anharmonic Low Energy Rotation of Organic Moieties
    Debasmita Pariari, Paribesh Acharyya, Arijit Sinha, Ashutosh Mohanty, Shaili Sett, Navkiranjot Kaur Gill, Arindam Ghosh, Umesh V. Waghmare, Kanishka Biswas, D. D. Sarma
    ACS Energy Letters, 2024
    Stability issues of MAPbI 3 and FAPbI 3 have led to the exploration of more stable FA x MA 1– x PbI 3 solid solutions for many energy applications. Thermal properties are important in view of the inevitable heat generation in energy conversion processes. MAPbI 3 is reported to have an ultralow thermal conductivity, κ (∼0.34 W·m –1 ·K –1 ). Surprisingly, there is no report of κ for FA/MA mixed compositions, despite their obvious relevance. Here, we report an intriguing observation of a non-monotonic reduction of κ with FA substitution, while most other physical properties, such as the lattice parameters and bandgap, vary monotonically. This leads the asymmetric composition FA 0.3 MA 0.7 PbI 3 to become the lowest κ (∼0.2 W·m –1 ·K –1 ) material among all three-dimensional metal halide perovskites. We show this non-monotonic κ is a consequence of two monotonic and opposing trends with increasing FA compositions, namely, an increasingly facile rotation of a decreasing number of MA ions. Raman studies, together with ab initio theoretical results, show that the heterogeneous bonding environment in FA x MA 1– x PbI 3 results in numerous low-energy, highly anharmonic, and localized optical phonon modes strongly coupled to acoustic phonons related exclusively to MA, but not FA, rotations, leading to very short phonon lifetimes (0.3–2 ps) and, therefore, to the ultralow κ for these compounds.
  • Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation
    Rahul Debnath, Shaili Sett, Sudipta Kundu, Rabindra Biswas, Varun Raghunathan, Manish Jain, Arindam Ghosh, Akshay Singh
    Physical Review B, 2022
    Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles $>$ ${15}^{\ensuremath{\circ}}$) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL ${\mathrm{WSe}}_{2}$. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton ($X{X}^{\ensuremath{-}}$) are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from near alignment of ${Q}^{\ensuremath{'}}\text{\ensuremath{-}}K$ and $K\text{\ensuremath{-}}K$ valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities of studying exciton-phonon coupling, band alignment, and screening.
  • Phonons and Thermal Properties of Ge Nanowires: A Raman Spectroscopy Investigation and Phonon Simulations
    Vishal Kumar Aggarwal, Shaili Sett, Jyotirmoy Sau, Ankita Ghatak, Manoranjan Kumar, Achintya Singha, A. K. Raychaudhuri
    Journal of Physical Chemistry C, 2022
    We have investigated phonon an harmonicity related thermal properties [e.g., coefficient of thermal expansion (α), Gruneisen parameter (γ), and phonon mean free path as limited by Umklapp scattering (Λmfp)] for Ge nanowires (NWs) using temperature-dependent Raman spectroscopy as well as phonon dynamics simulations. The experiments were carried out in two types of NW ensembles. One type of NWs has only the native oxide layer on Ge, and the other type has relatively thicker GeO2 on the surface forming a core–shell structure. The temperature-dependent shift of the LO/TO Raman line of Ge (300 cm–1) was used to determine the αγ product in the temperature range of 80–800 K. The αγ product is enhanced compared to that observed in the bulk crystalline Ge over the whole temperature range. The experimental work was complimented by phonon simulations with quasi-harmonic approximation using density functional perturbation theory. The simulation allowed us to determine the thermodynamic parameters like bulk modulus, specific heat capacity (Cv), α, and γ. We have determined the anharmonicity coefficients and phonon lifetimes in Ge NWs and also estimated the Λmfp arising from phonon–phonon scattering (Umklapp process). Comparison of the computed thermal parameters with the experimental data allowed us to place a confidence limit on the calculated parameters, which was used to separate out the two parameters αandγ for the NWs from the observed αγ product. The enhancement of α, in particular, in the Ge NWs has been explained as arising from significant softening of θD in the NWs as observed from the low temperature Cv calculated from the phonon simulations. Comparison of the computed phonon density of states shows appearance of excess weights in the phonon spectrum, which contributes to enhancement of heat capacity in NWs compared to that in the bulk.
  • Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids
    Shaili Sett, Aparna Parappurath, Navkiranjot Kaur Gill, Neha Chauhan, Arindam Ghosh
    Nano Express, 2022
    Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.
  • Substrate wettability guided oriented self assembly of Janus particles
    Meneka Banik, Shaili Sett, Chirodeep Bakli, Arup Kumar Raychaudhuri, Suman Chakraborty, Rabibrata Mukherjee
    Scientific Reports, 2021
  • Anomalous electrical transport in orientationally controlled trinary hybrids of graphene and twisted bilayer molybdenum disulphide
    Shaili Sett, Sudipta Kundu, Saloni Kakkar, Navkiranjot Kaur Gill, Manish Jain, Arindam Ghosh
    Bulletin of Materials Science, 2021
  • A simple fabrication strategy for orientationally accurate twisted heterostructures
    Rahul Debnath, Shaili Sett, Rabindra Biswas, Varun Raghunathan, Arindam Ghosh
    Nanotechnology, 2021
  • Effective Separation of Photogenerated Electron-Hole Pairs by Radial Field Facilitates Ultrahigh Photoresponse in Single Semiconductor Nanowire Photodetectors
    Shaili Sett, A. K. Raychaudhuri
    Journal of Physical Chemistry C, 2020
  • Temperature-dependent Thermal Conductivity of a Single Germanium Nanowire Measured by Optothermal Raman Spectroscopy
    Shaili Sett, Vishal Kumar Aggarwal, Achintya Singha, A. K. Raychaudhuri
    Physical Review Applied, 2020
  • Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers
    Shaili Sett, Vishal Kumar Aggarwal, Achintya Singha, Sandip Bysakh, A K Raychaudhuri
    Semiconductor Science and Technology, 2020
  • Surface oxide modification enables super-linear photoresponse in a single Germanium nanowire photodetector
    Shaili Sett, Ravindra Singh Bisht, Ankita Ghatak, A.K. Raychaudhuri
    Applied Surface Science, 2019
  • Tunable growth of semiconductor nanostructures by Plasma Enhanced Chemical Vapor Deposition - Synthesis, morphological and Raman studies
    S. Leela, G.V. Rohini, K. Saranya, Sekhar Bhattacharya, Nafis Ahmed, Shaili Sett, Barnali Ghosh
    Superlattices and Microstructures, 2018
  • Self-powered single semiconductor nanowire photodetector
    Shaili Sett, Subhamita Sengupta, N Ganesh, K S Narayan, A K Raychaudhuri
    Nanotechnology, 2018
  • Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide-Controlled High Optical Gain
    Shaili Sett, Ankita Ghatak, Deepak Sharma, G. V. Pavan Kumar, A. K. Raychaudhuri
    Journal of Physical Chemistry C, 2018
  • Restoration of perovskite phase in the top layer of thin BTO film by plasma treatment and annealing
    Subhamita Sengupta, Ankita Ghatak, Shaili Sett, Monjoy Sreemany, Sandip Bysakh, Barnali Ghosh, A K Raychaudhuri
    Journal of Physics D Applied Physics, 2018
  • Fabrication of large array of uniform metal nanostructures by use of soft sphere lithography and plasma etching
    Shaili Sett, Meneka Banik, Rabibrata Mukherjee, A. K. Raychaudhuri
    Aip Conference Proceedings, 2017
  • Investigation of factors affecting electrical contacts on single germanium nanowires
    Shaili Sett, K. Das, A. K. Raychaudhuri
    Journal of Applied Physics, 2017
  • Weak localization and the approach to metal-insulator transition in single crystalline germanium nanowires
    Shaili Sett, K Das, A K Raychaudhuri
    Journal of Physics Condensed Matter, 2017

RECENT SCHOLAR PUBLICATIONS

  • Moiré-Engineered Ferroelectric Transistors for Nearly Trap-Free, Low-Power, and Nonvolatile 2D Electronics
    A Singha, S Sett, K Watanabe, T Taniguchi, A Ghosh, R Debnath
    ACS Nano 20 (13), 10544–10555 , 2026
    2026
  • Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping
    S Santra, S Samdariya, S Sett, K Watanabe, T Taniguchi, A Ghosh
    APL Electronic Devices 1 (4) , 2025
    2025
    Citations: 2
  • Moiré Ferroelectricity‐Enhanced Optoelectronic Response in an all‐2D van der Waals Hybrid
    NK Gill, S Sett, R Debnath, A Singha, K Watanabe, T Taniguchi, A Ghosh
    Small 21 (37), e05797 , 2025
    2025
    Citations: 1
  • van der Waals Hybrids for Ferroelectric Device Application
    S Sett, T Paul, A Ghosh
    Annual Review of Materials Research 55 , 2025
    2025
    Citations: 3
  • Ultralow Thermal Conductivity Approaching the Disordered Limit in Crystalline TlCuZrSe 3
    RK Rohj, A Bhui, S Sett, A Ghosh, K Biswas, DD Sarma
    Chemistry of Materials 37 (1), 520-529 , 2024
    2024
    Citations: 9
  • Twist‐Controlled Ferroelectricity and Emergent Multiferroicity in WSe 2 Bilayers
    Y Hassan, B Singh, M Joe, BM Son, TD Ngo, Y Jang, S Sett, A Singha, ...
    Advanced Materials 36 (46), 2406290 , 2024
    2024
    Citations: 21
  • Emergent inhomogeneity and nonlocality in a graphene field-effect transistor on a near-parallel Moiré superlattice of transition metal dichalcogenides
    S Sett, R Debnath, A Singha, S Mandal, KM Jyothsna, M Bhakar, ...
    Nano Letters 24 (30), 9245-9252 , 2024
    2024
    Citations: 8
  • Non-monotonic Thermal Conductivity of FA x MA 1– x PbI 3 Achieving Ultralow Values: The Role of Anharmonic Low Energy Rotation of Organic Moieties
    D Pariari, P Acharyya, A Sinha, A Mohanty, S Sett, NK Gill, A Ghosh, ...
    ACS Energy Letters 9 (5), 2128-2136 , 2024
    2024
    Citations: 10
  • Tuning exciton complexes in twisted bilayer at intermediate misorientation
    R Debnath, S Sett, S Kundu, R Biswas, V Raghunathan, M Jain, A Ghosh, ...
    Physical Review B 106 (12), 125409 , 2022
    2022
    Citations: 13
  • Phonons and Thermal Properties of Ge Nanowires: A Raman Spectroscopy Investigation and Phonon Simulations
    AKR Vishal Kumar Aggarwal, Shaili Sett, Jyotirmoy Sau, Ankita Ghatak ...
    J. Phys. Chem. C 126 (35), 15046–15056 , 2022
    2022
    Citations: 4
  • Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids
    S Sett, A Parappurath, NK Gill, N Chauhan, A Ghosh
    Nano Express 3 (1), 014001 , 2021
    2021
    Citations: 11
  • Anomalous electrical transport in orientationally controlled trinary hybrids of graphene and twisted bilayer molybdenum disulphide
    S Sett, S Kundu, S Kakkar, NK Gill, M Jain, A Ghosh
    Bulletin of Materials Science 44 (4), 280 , 2021
    2021
    Citations: 1
  • A simple fabrication strategy for orientationally accurate twisted heterostructures
    R Debnath, S Sett, R Biswas, V Raghunathan, A Ghosh
    Nanotechnology 32 (45), 455705 , 2021
    2021
    Citations: 19
  • Substrate wettability guided oriented self assembly of Janus particles
    M Banik, S Sett, C Bakli, AK Raychaudhuri, S Chakraborty, R Mukherjee
    Scientific Reports 11 (1), 1182 , 2021
    2021
    Citations: 27
  • Effective separation of photogenerated electron–hole pairs by radial field facilitates ultrahigh photoresponse in single semiconductor nanowire photodetectors
    S Sett, AK Raychaudhuri
    The Journal of Physical Chemistry C 124 (41), 22808-22816 , 2020
    2020
    Citations: 16
  • Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy
    S Sett, VK Aggarwal, A Singha, AK Raychaudhuri
    Physical Review Applied 13 (5), 054008 , 2020
    2020
    Citations: 13
  • Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers
    S Sett, VK Aggarwal, A Singha, S Bysakh, AK Raychaudhuri
    Semiconductor Science and Technology 35 (2), 025020 , 2020
    2020
    Citations: 6
  • Surface oxide modification enables super-linear photoresponse in a single Germanium nanowire photodetector
    S Sett, RS Bisht, A Ghatak, AK Raychaudhuri
    Applied Surface Science 497, 143754 , 2019
    2019
    Citations: 15
  • Self-powered single semiconductor nanowire photodetector
    S Sett, S Sengupta, N Ganesh, KS Narayan, AK Raychaudhuri
    Nanotechnology 29 (44), 445202 , 2018
    2018
    Citations: 29
  • Tunable growth of semiconductor nanostructures by Plasma Enhanced Chemical Vapor Deposition-Synthesis, morphological and Raman studies
    S Leela, GV Rohini, K Saranya, S Bhattacharya, N Ahmed, S Sett, ...
    Superlattices and Microstructures 122, 510-515 , 2018
    2018
    Citations: 3

MOST CITED SCHOLAR PUBLICATIONS

  • Broad band single germanium nanowire photodetectors with surface oxide-controlled high optical gain
    S Sett, A Ghatak, D Sharma, GVP Kumar, AK Raychaudhuri
    The Journal of Physical Chemistry C 122 (15), 8564-8572 , 2018
    2018
    Citations: 44
  • Self-powered single semiconductor nanowire photodetector
    S Sett, S Sengupta, N Ganesh, KS Narayan, AK Raychaudhuri
    Nanotechnology 29 (44), 445202 , 2018
    2018
    Citations: 29
  • Substrate wettability guided oriented self assembly of Janus particles
    M Banik, S Sett, C Bakli, AK Raychaudhuri, S Chakraborty, R Mukherjee
    Scientific Reports 11 (1), 1182 , 2021
    2021
    Citations: 27
  • Twist‐Controlled Ferroelectricity and Emergent Multiferroicity in WSe 2 Bilayers
    Y Hassan, B Singh, M Joe, BM Son, TD Ngo, Y Jang, S Sett, A Singha, ...
    Advanced Materials 36 (46), 2406290 , 2024
    2024
    Citations: 21
  • A simple fabrication strategy for orientationally accurate twisted heterostructures
    R Debnath, S Sett, R Biswas, V Raghunathan, A Ghosh
    Nanotechnology 32 (45), 455705 , 2021
    2021
    Citations: 19
  • Investigation of factors affecting electrical contacts on single germanium nanowires
    S Sett, K Das, AK Raychaudhuri
    JOURNAL OF APPLIED PHYSICS 121, 124503 , 2017
    2017
    Citations: 19
  • Effective separation of photogenerated electron–hole pairs by radial field facilitates ultrahigh photoresponse in single semiconductor nanowire photodetectors
    S Sett, AK Raychaudhuri
    The Journal of Physical Chemistry C 124 (41), 22808-22816 , 2020
    2020
    Citations: 16
  • Surface oxide modification enables super-linear photoresponse in a single Germanium nanowire photodetector
    S Sett, RS Bisht, A Ghatak, AK Raychaudhuri
    Applied Surface Science 497, 143754 , 2019
    2019
    Citations: 15
  • Tuning exciton complexes in twisted bilayer at intermediate misorientation
    R Debnath, S Sett, S Kundu, R Biswas, V Raghunathan, M Jain, A Ghosh, ...
    Physical Review B 106 (12), 125409 , 2022
    2022
    Citations: 13
  • Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy
    S Sett, VK Aggarwal, A Singha, AK Raychaudhuri
    Physical Review Applied 13 (5), 054008 , 2020
    2020
    Citations: 13
  • Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids
    S Sett, A Parappurath, NK Gill, N Chauhan, A Ghosh
    Nano Express 3 (1), 014001 , 2021
    2021
    Citations: 11
  • Non-monotonic Thermal Conductivity of FA x MA 1– x PbI 3 Achieving Ultralow Values: The Role of Anharmonic Low Energy Rotation of Organic Moieties
    D Pariari, P Acharyya, A Sinha, A Mohanty, S Sett, NK Gill, A Ghosh, ...
    ACS Energy Letters 9 (5), 2128-2136 , 2024
    2024
    Citations: 10
  • Ultralow Thermal Conductivity Approaching the Disordered Limit in Crystalline TlCuZrSe 3
    RK Rohj, A Bhui, S Sett, A Ghosh, K Biswas, DD Sarma
    Chemistry of Materials 37 (1), 520-529 , 2024
    2024
    Citations: 9
  • Emergent inhomogeneity and nonlocality in a graphene field-effect transistor on a near-parallel Moiré superlattice of transition metal dichalcogenides
    S Sett, R Debnath, A Singha, S Mandal, KM Jyothsna, M Bhakar, ...
    Nano Letters 24 (30), 9245-9252 , 2024
    2024
    Citations: 8
  • Restoration of perovskite phase in the top layer of thin BTO film by plasma treatment and annealing
    S Sengupta, A Ghatak, S Sett, M Sreemany, S Bysakh, B Ghosh, ...
    Journal of Physics D: Applied Physics 51 (8), 085304 , 2018
    2018
    Citations: 8
  • Weak localization and the approach to metal–insulator transition in single crystalline germanium nanowires
    S Sett, K Das, AK Raychaudhuri
    Journal of Physics: Condensed Matter 29 (11), 115301 , 2017
    2017
    Citations: 7
  • Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers
    S Sett, VK Aggarwal, A Singha, S Bysakh, AK Raychaudhuri
    Semiconductor Science and Technology 35 (2), 025020 , 2020
    2020
    Citations: 6
  • Phonons and Thermal Properties of Ge Nanowires: A Raman Spectroscopy Investigation and Phonon Simulations
    AKR Vishal Kumar Aggarwal, Shaili Sett, Jyotirmoy Sau, Ankita Ghatak ...
    J. Phys. Chem. C 126 (35), 15046–15056 , 2022
    2022
    Citations: 4
  • van der Waals Hybrids for Ferroelectric Device Application
    S Sett, T Paul, A Ghosh
    Annual Review of Materials Research 55 , 2025
    2025
    Citations: 3
  • Tunable growth of semiconductor nanostructures by Plasma Enhanced Chemical Vapor Deposition-Synthesis, morphological and Raman studies
    S Leela, GV Rohini, K Saranya, S Bhattacharya, N Ahmed, S Sett, ...
    Superlattices and Microstructures 122, 510-515 , 2018
    2018
    Citations: 3