Swapnadip De

@msit.edu.in

Associate Professor / ECE
Meghnad Saha Institute of Technology

Dr Swapnadip De is working as Associate Professor in ECE department of Meghnad Saha Institute of Technology since December 12, 2002.

EDUCATION

PhD, M. Tech, B. Tech, B. SC in Physics Honours

RESEARCH INTERESTS

VLSI and Microelectronics

618

Scholar Citations

11

Scholar h-index

12

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Modelling of basic parameters for non-conventional MOSFETs
    S De
    Lambert Academic Publishing, Dudweiler Landstrae 9966123, Saarbrcken 2023

  • Study of subthreshold surface potential of MOSFETs
    PD Swapnadip De, Ishita Gupta
    LAP, UK 2023

  • Basic concepts of Visual Media
    SD Meghavi Trivedi
    LAP, UK 2023

  • Study of Automatic Door Lock system
    S De
    Lambert Academic Publishing, Dudweiler Landstrae 9966123, Saarbrcken 2023

  • Review of non conventional MOSFETs
    S De
    Lambert Academic Publishing, Dudweiler Landstrae 9966123, Saarbrcken 2023

  • Basic Semiconductor and Metal-Oxide-Semiconductor (MOS) Physics
    S De
    Technology Computer Aided Design, 61-160 2018

  • Technology computer aided design
    C Sarkar
    CRC Press 2018

  • Nanotechnology: synthesis to applications
    S Roy, CK Ghosh, CK Sarkar
    CRC Press 2017

  • Crystallography, Band Structure, and Density of States at Nanoscale
    S De, S Roy, CK Ghosh, CK Sarkar
    Nanotechnology, 33-49 2017

  • Adiabatic implementation of reversible architecture
    A Chowdhury, S Mal, S Goswami, A Mondal, S De, M Chanda
    2017 Devices for Integrated Circuit (DevIC), 205-210 2017

  • Parameter modeling of linearly doped double gate MOSFET with high-k dielectrics
    S Das, A Choudhury, S Ghosh, S Sarkar, M Chanda, S De
    2017 Devices for Integrated Circuit (DevIC), 136-140 2017

  • Low power VLSI design: fundamentals
    A Sarkar, S De, M Chanda, CK Sarkar
    Walter de Gruyter GmbH & Co KG 2016

  • Modelling of the Basic Parameters for Gaussian doped Symmetric Double Halo Dual Material Gate n-MOSFET
    S Mukherjeea, S Sarkarb, P Agarwalc, A Dasd, M Chandae, S Def
    2016

  • A review of subthreshold surface potential for single gate dual material double halo MOSFET
    S De, A Kumari, P Dutta, I Gupta, M Bhattacharya
    International Journal of VLSI Design and Technology 2 (1), 1-20 2016

  • Design and analysis of 32-Bit CLA using energy efficient adiabatic logic for ultra-low-power application
    M Chanda, S De, CK Sarkar
    Journal of Circuits, Systems and Computers 24 (10), 1550160 2015

  • Novel charge plasma based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection
    M Chanda, P Dey, S De, CK Sarkar
    Superlattices and Microstructures 86, 446-455 2015

  • Swapnadip De, Chandan Kumar Sarkar, Novel charge plasma-based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection
    M Chanda, P Dey
    Superlattices and Microstructures 86, 446-455 2015

  • Modeling of characteristic parameters for nano-scale junctionless double gate MOSFET considering quantum mechanical effect
    M Chanda, S De, CK Sarkar
    Journal of Computational Electronics 14, 262-269 2015

  • Implementation of subthreshold adiabatic logic for ultralow-power application
    M Chanda, S Jain, S De, CK Sarkar
    IEEE Transactions on very large scale integration (VLSI) systems 23 (12 2015

  • Modelling of RF Parameters for Nano-Scale junctionless Double Gate MOSFET considering Fringing Effect
    CKS Manash Chanda,Prithu Dey,Swapnadip De
    International Conference on Nanotechnology(NANOCON 2014) 2014

MOST CITED SCHOLAR PUBLICATIONS

  • Effect of gate engineering in double-gate MOSFETs for analog/RF applications
    A Sarkar, A Kumar Das, S De, C Kumar Sarkar
    Microelectronics Journal,Impact factor:0.91 43 (11), 873-882 2012
    Citations: 187

  • Implementation of subthreshold adiabatic logic for ultralow-power application
    M Chanda, S Jain, S De, CK Sarkar
    IEEE Transactions on very large scale integration (VLSI) systems 23 (12 2015
    Citations: 63

  • Technology computer aided design
    C Sarkar
    CRC Press 2018
    Citations: 49

  • Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
    A Sarkar, S De, A Dey, CK Sarkar
    Journal of Computational Electronics,Impact factor:1.02 11 (2), 182-195 2012
    Citations: 49

  • Nanotechnology: synthesis to applications
    S Roy, CK Ghosh, CK Sarkar
    CRC Press 2017
    Citations: 34

  • Modeling of characteristic parameters for nano-scale junctionless double gate MOSFET considering quantum mechanical effect
    M Chanda, S De, CK Sarkar
    Journal of Computational Electronics 14, 262-269 2015
    Citations: 27

  • 1/f noise and analogue performance study of short-channel cylindrical surrounding gate MOSFET using a new subthreshold analytical pseudo-two-dimensional model
    A Sarkar, S De, A Dey, CK Sarkar
    IET circuits, devices & systems,Impact factor:1.01 6 (1), 28-34 2012
    Citations: 27

  • Low power VLSI design: fundamentals
    A Sarkar, S De, M Chanda, CK Sarkar
    Walter de Gruyter GmbH & Co KG 2016
    Citations: 25

  • A new analytical subthreshold model of SRG MOSFET with analogue performance investigation
    A Sarkar, S De, A Dey, CK Sarkar
    International Journal of Electronics,Impact factor:0.51 99 (2), 267-283 2012
    Citations: 25

  • Novel charge plasma based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection
    M Chanda, P Dey, S De, CK Sarkar
    Superlattices and Microstructures 86, 446-455 2015
    Citations: 19

  • Asymmetric halo and symmetric Single‐Halo Dual‐Material Gate and Double‐Halo Dual‐Material Gate n‐MOSFETs characteristic parameter modeling
    A Sarkar, S De, CK Sarkar
    International Journal of Numerical Modelling: Electronic Networks, Devices 2013
    Citations: 15

  • Asymmetric halo and symmetric SHDMG & DHDMGn‐MOSFETs characteristic parameter modeling
    A Sarkar, S De, CK Sarkar
    IJNM 26 (1), 41-55 2013
    Citations: 11

  • Modelling of characteristic parameters for asymmetric DHDMG MOSFET
    S De, A Sarkar, CK Sarkar
    WSEAS Transactions on Circuits and Systems 11, 371-380 2012
    Citations: 9

  • Fringing Capacitance based surface potential model for pocket DMG n-MOSFETs
    S De, A Sarkar, CK Sarkar
    Journal of Electron Devices 12, 704-712 2012
    Citations: 9

  • Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs
    S De, A Sarkar, CK Sarkar
    International Journal of Electronics,Impact factor:0.51 98 (10), 1365-1381 2011
    Citations: 9

  • VLSI design and EDA tools
    A Sarkar, S De, CK Sarkar
    Scitech 2011
    Citations: 9

  • Effect of fringing field in modeling of subthreshold surface potential in Dual Material Gate (DMG) MOSFETS
    S De, A Sarkar, N Mohankumar, CK Sarkar
    2008 International Conference on Electrical and Computer Engineering, 148-151 2008
    Citations: 8

  • Swapnadip De, Chandan Kumar Sarkar, Novel charge plasma-based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection
    M Chanda, P Dey
    Superlattices and Microstructures 86, 446-455 2015
    Citations: 5

  • Modeling of Subthreshold Surface Potential for Short Channel Double Gate Dual Material Double Halo MOSFET.
    D Das, S De, M Chanda, C Kumar Sarkar
    IUP Journal of Electrical & Electronics Engineering 7 (4) 2014
    Citations: 5

  • Parameter modeling of linearly doped double gate MOSFET with high-k dielectrics
    S Das, A Choudhury, S Ghosh, S Sarkar, M Chanda, S De
    2017 Devices for Integrated Circuit (DevIC), 136-140 2017
    Citations: 4