@agacollege.in
Associate Professor, PG & Research Department of Physics
Alagappa Government Arts College, Karaikudi
Thin film and Nanoscience
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
L.Bruno Chandrasekar, M.Manoj Prabu, G. Thanigaivel, N. Shankar, S.Rafi Ahamed, M. Karunakaran, and P Shunmuga Sundaram
Elsevier BV
Kasirajan Kasinathan, Young-Kwon Park, Balasubramani Ravindran, Karunakaran Marimuthu, Ganesh Munuswamy-Ramanujam, Soon Woong Chang, and Jin-Heong Yim
Elsevier BV
S. Suvathi, K. Ravichandran, M. Karunakaran, P.K. Praseetha, M. Ayyanar, and S. Gobalakrishnan
Elsevier BV
M. Divya Gnaneswari, M. Karunakaran, L. Bruno Chandrasekar, J. Merciline Leonora, and P. Shunmuga Sundaram
Elsevier BV
Usha Swaminathan, Karunakaran Marimuthu, Kasirajan Kasinathan, Hong Kyoon Choi, Prabakaran Sivakumar, Ravichandran Krishnasamy, and Rajkumar Palanisamy
Elsevier BV
S. Rajasekar, Jafar Ali Ibrahim Syed Masood, N.S. Kalyan Chakravarthi, P. Shunmuga Sundaram, M. Karunakaran, Gaurav Jayaswal, L. Bruno Chandrasekar, Abdullah N. Alodhayb, and George Z. Kyzas
Elsevier BV
S. Jafar Ali Ibrahim, Bruno Chandrasekar, S. Rajasekar, N.S. Kalyan Chakravarthi, M. Karunakaran, Mona Braim, and Abdullah N. Alodhayb
Elsevier BV
L. Bruno Chandrasekar and M. Karunakaran
World Scientific Pub Co Pte Ltd
The electron tunneling in ZnO/ZnCdO semiconductor heterostructure is studied using the matrix method. The spin-polarization is examined due to Dresselhaus spin–orbit interaction and Rashba spin–orbit interaction. The total spin-polarization is mainly due to Dresselhaus spin–orbit interaction and the Rashba spin–orbit interaction is small. The high degree of spin polarization can be achieved at a high barrier width. With the increasing cadmium concentration in this heterostructure, the spin polarization efficiency is enhanced. The dwell time is reported and discussed.
Krishnasamy Ravichandran, Rajagopal Shalini, Muniappan Ayyanar, Pazhanisamy Kavitha, Mazabalo Baneto, Marimuthu Karunakaran, Prabhakaran Kala Praseetha, Katheresan Catherine Siriya Pushpa, and Narayanamoorthi Anuradha
Elsevier BV
K. Kasirajan, S. Selvam, M. Karunakaran, J.Y. Yang, S.H. Song, and J.-H. Yim
Elsevier BV
L. Bruno Chandrasekar, M. Karunakaran, and P. Muthukumar
Elsevier BV
Kasirajan Kasinathan, Karunakaran Marimuthu, Selvam Samayanan, and Jin-Heong Yim
Royal Society of Chemistry (RSC)
Dye and microorganism-containing industrial wastewater have harmed both the environment and human health. Multifunctional nanomaterials are highly urgent. So, CS/WS2@TiO2 NCs have potential candidates for biological and environmental applications.
M. Sathya, G. Selvan, K. Kasirajan, S. Usha, P. Baskaran, M. Karunakaran, and S. S. R. Inbanathan
Springer Science and Business Media LLC
M. Sathya, G. Selvan, M. Karunakaran, K. Kasirajan, S. Usha, M. Logitha, S. Prabakaran, and P. Baskaran
Springer Science and Business Media LLC
L. Bruno Chandrasekar, M. Karunakaran, and K. Gnanasekar
Springer Science and Business Media LLC
M. Sathya, G. Selvan, K. Kasirajan, S. Usha, P. Baskaran, and M. Karunakaran
Springer Science and Business Media LLC
Kasirajan Kasinathan, Selvam Samayanan, Karunakaran Marimuthu, and Jin-Heong Yim
Elsevier BV
K. Radhi Devi, L. Bruno Chandrasekar, K. Kasirajan, M. Karunakaran, M. Divya Gnaneswari, and S. Usha
Springer Science and Business Media LLC
M. Sathya, G. Selvan, K. Kasirajan, M. Karunakaran, S. Usha, and P. Baskaran
Springer Science and Business Media LLC
A. Jesu Jebathew, M. Karunakaran, Ramesh Ade, Joice Sophia Ponraj, V. Ganesh, Rajesh Kumar Manavalan, Yugandhar Bitla, I. S. Yahia, and H. Algarni
Springer Science and Business Media LLC
M. Sathya, G. Selvan, K. Kasirajan, S. Usha, P. Baskaran, M. Karunakaran, and S. S. R. Inbanathan
Springer Science and Business Media LLC
M. Sathya, G. Selvan, K. Kasirajan, S. Usha, P. Baskaran, and M. Karunakaran
Springer Science and Business Media LLC
Jafar Ali Ibrahim, Varsha and J. KaurK.
University of the Aegean
<p>Pure and Zr doped ZnO thin films were prepared using SILAR technique. The influence of Zr doping on structural, morphological, optical and gas sensing properties of ZnO has been reported. X-ray diffraction study confirmed the formation of wurtzite structure of ZnO thin film (JCPDS 36-1451) fabricated by SILAR technique and the caluculated crystallites size of pure and doped ZnO were 39 and 36 nm respectively . SEM analysis of thin films has shown a completely different surface morphology. EDAX spetrum cnfirmed the presence of different compositional element in the fabriated thin films. Zr (3 wt%) doped ZnO thin film exhibited the best properties with a good transmittance and it has wide band gap of 3.26 eV. Photoluminescence emissions indicated increase in concentration of oxygen vacancies with introduction of dopant. NH3 vapour sensors were fabricated out of fabricated samples and it was observed that doped samples have significantly high sensing response, good selectivity, fast response and recovery time to ammonia vapoutr at room temperature.</p>
A. Jesu Jebathew, M. Karunakaran, Mohd Shkir, H. Algarni, S. AlFaify, Aslam Khan, Najla Alotaibi, and Thamraa Alshahrani
Elsevier BV
Kasirajan Kasinathan, Karunakaran Marimuthu, Balaji Murugesan, Maheswari Sathaiah, Palanisamy Subramanian, Prabakaran Sivakumar, Usha Swaminathan, and Rajalakshmi Subbiah
Elsevier BV