Phase-Change Material Enabled Metamaterials and Metasurfaces Shirish Tripathi, Vibhu Srivastava, Ritesh Kumar Mishra Proceedings of the 4th IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation Iatmsi 2026, 2026
Switching of electromagnetic induced transparency in terahertz metasurface Prateek Mishra, Vibhu Srivastava, Sanjeev Kumar, Dhanvir Singh Rana, Yogendra Kumar Mishra, et al. Journal of Physics D Applied Physics, 2023 We demonstrate functional switching of electromagnetic induced transparency (EIT) in terahertz (THz) metasurface. We first simulated and fabricated two metasurfaces that have light difference in their unit cell design. THz time domain spectroscopy of fabricated metasurfaces shows that two metasurfaces have almost similar transmission spectra but one of them possesses EIT while the second does not. To implement functional switching of EIT, we show numerically that characteristics of both metasurfaces can be achieved by a single hybrid metasurface containing a phase change material, Ge2Sb2Te5 (GST). GST has a large contrast in THz material properties in its crystalline and amorphous phases and its phase can be rapidly interchanged by external stimuli. We incorporated GST in the unit cell and show that phase change of GST portion in the metasurface unit cell at a specific location modulates the transmission spectra working as an EIT switch. EIT in the metasurface is attributed to coupling of two opposite phases bright resonance modes supported by the unit cell. The group delay of the transmitted THz radiation indicates that THz wave slows down significantly at EIT frequency. The dynamic interplay between two different responses within a single hybrid metasurface can have applications in biosensors, THz buffers, modulators, and other functional THz communication devices.
Modulation Characteristics of Ge2Sb2Te5 Metasurface Terahertz Switch Prateek Mishra, Vibhu Srivastava, Sunny 2023 IEEE Workshop on Recent Advances in Photonics Wrap 2023, 2023 This study investigates the modulation characteristics of a metasurface incorporating Ge2Sb2Te5 (GST) in the terahertz (THz) frequency range. The transmission spectra of the metasurface in both amorphous (AGST) and crystalline (CGST) phases are analyzed and compared. The results show that the metasurface possesses high contrast in transmission spectra for AGST and CGST at around 1.75 THz. The modulation index was calculated as 96%, indicating the strong potential of the metasurface as a THz switch at this frequency. The mechanism of switching and electric field generation is investigated by analyzing the E-field distribution and current density for both phases. It is found that the high THz conductivity of crystalline GST leads to the absence of field enhancement and wave transmission with a larger value. The findings of this study provide useful insights into the design and optimization of THz devices based on GST metasurfaces.
Performance Optimization of Ge2Sb2Te5 Vertical Photodetector for Silicon Photonic Platform Manoj Tolani, Vibhu Srivastava, Srinivas Talabattula, Virendra Singh, Sunny 2023 IEEE Workshop on Recent Advances in Photonics Wrap 2023, 2023 In the present work, the design optimization of vertical photo detector is reported using amorphous $Ge_{2}Sb_{2}Te_{5}$ (a-GST) for silicon platform at telecommunication wavelength 1550 nm. The present work deals with the optimization of both a-GST as well as silicon layers. In the previously reported work, the researchers have optimized the performance only for optimal thickness of a-GST. However, in the present work, the performance of the device is verified for the optimal thickness of the silicon as well as a-GST. It is observed that the photodetector performs better for the lower thickness of the silicon layer for anode contact. However, the silicon thickness can't be reduced after some extent to avoid the metal-semiconductor-metal (MSM) design. The results prove the superiority of the proposed design which can be utilized for future device realization.
Active Switching of Electromagnetic Induced Transparency in Ge2Sb2Te5 Tunable Terahertz Metamaterial 2022 Conference on Lasers and Electro Optics CLEO 2022 Proceedings, 2022
Active Switching of Electromagnetic Induced Transparency in Ge2Sb2Te5 Tunable Terahertz Metamaterial Optics Infobase Conference Papers, 2022
Ge2Sb2Te5 Enabled Active Switching of Fano Resonance in Tunable Terahertz Metamaterial Optics Infobase Conference Papers, 2022
Phase-Change Material Enabled Metamaterials and Metasurfaces S Tripathi, V Srivastava, RK Mishra 2026 IEEE International Conference on Interdisciplinary Approaches in … , 2026 2026
Queue management for pre-staged transactions at ultra-wide enabled ATMs SK Chauhan, UKR Ratnakaram, N Rathaur, P Polasa, V Srivastava US Patent 12,230,110 , 2025 2025
Intelligent Distributed Ledger Based Smart Contract Orchestration for Preserving and Self-Healing of Configuration Fraud with Smart Device MK Sethia, V Srivastava, AR Buthukuri, AJ Bohra US Patent App. 18/197,164 , 2024 2024 Citations: 4
Multicomputer system providing voice enabled event processing SK Chauhan, UKR Ratnakaram, N Rathaur, V Srivastava, P Polasa US Patent 12,142,268 , 2024 2024
Pre-staged transactions with ultra-wideband networking and haptic feedback SK Chauhan, UKR Ratnakaram, N Rathaur, P Polasa, V Srivastava US Patent 12,058,249 , 2024 2024 Citations: 1
Performance Optimization of Vertical Photodetector for Silicon Photonic Platform M Tolani, V Srivastava, S Talabattula, V Singh 2023 IEEE Workshop on Recent Advances in Photonics (WRAP), 1-3 , 2023 2023
Modulation Characteristics of Ge 2 Sb 2 Te 5 Metasurface Terahertz Switch P Mishra, V Srivastava 2023 IEEE Workshop on Recent Advances in Photonics (WRAP), 1-3 , 2023 2023
Tuning of resonant mode properties of photonic crystal nanocavities using Ge 2 Sb 2 Te 5 phase-change material: S Tripathi et al. S Tripathi, V Srivastava, Sunny, RK Mishra Indian Journal of Physics 97 (12), 3637-3642 , 2023 2023 Citations: 6
Switching of electromagnetic induced transparency in terahertz metasurface P Mishra, V Srivastava, S Kumar, DS Rana, YK Mishra, Sunny Journal of Physics D: Applied Physics 56 (20), 205101 , 2023 2023 Citations: 11
Ge2Sb2Te5 Enabled Active Switching of Fano Resonance in Tunable Terahertz Metamaterial P Mishra, V Srivastava Frontiers in Optics, JTu4A. 88 , 2022 2022
Active Switching of Electromagnetic Induced Transparency in Ge 2 Sb 2 Te 5 Tunable Terahertz Metamaterial P Mishra, V Srivastava 2022 Conference on Lasers and Electro-Optics (CLEO), 1-2 , 2022 2022
Distributed ARC structure for performance optimization of phase-change material-based tunable photodetection V Srivastava, Sunny Journal of Electronic Materials 51 (2), 876-887 , 2022 2022 Citations: 2
Photo-Response Analysis of Oxygenated Ge2Sb2Te5 V Srivastava, Sunny IEEE 6th OGC2021 , 2021 2021
Polarization-Sensitive High-Q Four-Arm Structured Toroidal Terahertz Metamaterial P Mishra, V Srivastava, Sunny Journal of Electronic Materials , 2021 2021 Citations: 3
Fabrication of highly responsive phase-change Ge 2 Sb 2 Te 5 photodetector for visible region: V Srivastava et al. V Srivastava, P Mishra, Sunny Indian Journal of Physics 95 (5), 947-955 , 2021 2021 Citations: 8
Sol–gel derived BST (Ba x Sr 1−x TiO 3 ) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure A Debnath, V Srivastava, S Singh, Sunny Applied Nanoscience 10 (12), 5511-5521 , 2020 2020 Citations: 8
Evaluation of Electrical Discharge by Ge 2 Sb 2 Te 5 on Different Substrates for Optoelectronic Applications V Srivastava, T Bajpai 2020 IEEE REGION 10 CONFERENCE (TENCON), 86-90 , 2020 2020 Citations: 1
All-Dielectric Metasurface-Enabled Near-Infrared Switching Based on Ge 2 Sb 2 Te 5 Phase-Change Material (vol 49, pg 110, 2020) P Mishra, V Srivastava, M Kumar, Sunny JOURNAL OF ELECTRONIC MATERIALS 49 (8), 5084-5084 , 2020 2020
Correction to: All-Dielectric Metasurface-Enabled Near-Infrared Switching Based on Ge2Sb2Te5 Phase-Change Material M Prateek, S Vibhu, K Mirgender Journal of Electronic Materials 49 (8), 5084-5084 , 2020 2020
CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures V Srivastava, P Mishra, Sunny Scientific reports 10 (1), 11131 , 2020 2020 Citations: 21
MOST CITED SCHOLAR PUBLICATIONS
Sol-gel assisted nano-structured SnO 2 sensor for low concentration ammonia detection at room temperature A Beniwal, V Srivastava, Sunny Materials Research Express 6 (4), 046421 , 2019 2019 Citations: 38
CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures V Srivastava, P Mishra, Sunny Scientific reports 10 (1), 11131 , 2020 2020 Citations: 21
Design and Simulations of Ge 2 Sb 2 Te 5 Vertical Photodetector for Silicon Photonic Platform V Srivastava, M Tolani, R Kumar IEEE Sensors Journal 18 (2), 540-546 , 2017 2017 Citations: 16
Switching of electromagnetic induced transparency in terahertz metasurface P Mishra, V Srivastava, S Kumar, DS Rana, YK Mishra, Sunny Journal of Physics D: Applied Physics 56 (20), 205101 , 2023 2023 Citations: 11
All-Dielectric Metasurface-Enabled Near-Infrared Switching Based on Ge 2 Sb 2 Te 5 Phase-Change Material: Mishra, Srivastava, Kumar, and Sunny P Mishra, V Srivastava, M Kumar, Sunny Journal of Electronic Materials 49 (6), 3913-3919 , 2020 2020 Citations: 11
Fabrication and characterization of metal-ferroelectric-semiconductor non-volatile memory using BaTiO 3 film prepared through sol–gel process A Debnath, V Srivastava, Sunny, S Singh Applied Physics A 126 (1), 36 , 2020 2020 Citations: 10
NK agarwal and IM Mishra LD Mall, VC Srivastava A. Phy. Chem. Eng. Asp 264, 17 , 2005 2005 Citations: 9
Fabrication of highly responsive phase-change Ge 2 Sb 2 Te 5 photodetector for visible region: V Srivastava et al. V Srivastava, P Mishra, Sunny Indian Journal of Physics 95 (5), 947-955 , 2021 2021 Citations: 8
Sol–gel derived BST (Ba x Sr 1−x TiO 3 ) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure A Debnath, V Srivastava, S Singh, Sunny Applied Nanoscience 10 (12), 5511-5521 , 2020 2020 Citations: 8
Investigations on optical behavior of Crystalline-Ge2Sb2Te5 for photo-detection application in near infra-red region V Srivastava, M Tolani Superlattices and Microstructures 130, 1-11 , 2019 2019 Citations: 8
Tuning of resonant mode properties of photonic crystal nanocavities using Ge 2 Sb 2 Te 5 phase-change material: S Tripathi et al. S Tripathi, V Srivastava, Sunny, RK Mishra Indian Journal of Physics 97 (12), 3637-3642 , 2023 2023 Citations: 6
Intelligent Distributed Ledger Based Smart Contract Orchestration for Preserving and Self-Healing of Configuration Fraud with Smart Device MK Sethia, V Srivastava, AR Buthukuri, AJ Bohra US Patent App. 18/197,164 , 2024 2024 Citations: 4
Investigations on transient regime of Ge2Sb2Te5-based vertical photodetector integrated with silicon-on-insulator waveguide V Srivastava, P Mishra Photonics and Nanostructures-Fundamentals and Applications 40, 100796 , 2020 2020 Citations: 4
Polarization-Sensitive High-Q Four-Arm Structured Toroidal Terahertz Metamaterial P Mishra, V Srivastava, Sunny Journal of Electronic Materials , 2021 2021 Citations: 3
Distributed ARC structure for performance optimization of phase-change material-based tunable photodetection V Srivastava, Sunny Journal of Electronic Materials 51 (2), 876-887 , 2022 2022 Citations: 2
Light Matter Interaction of Ge 2 Sb 2 Te 5 on Different Substrate Platforms for Photo-detection Application T Bajpai, V Srivastava 2019 IEEE International Conference on Sensors and Nanotechnology, 1-4 , 2019 2019 Citations: 2
Pre-staged transactions with ultra-wideband networking and haptic feedback SK Chauhan, UKR Ratnakaram, N Rathaur, P Polasa, V Srivastava US Patent 12,058,249 , 2024 2024 Citations: 1
Evaluation of Electrical Discharge by Ge 2 Sb 2 Te 5 on Different Substrates for Optoelectronic Applications V Srivastava, T Bajpai 2020 IEEE REGION 10 CONFERENCE (TENCON), 86-90 , 2020 2020 Citations: 1
Effect of Sputtering Process Parameters on Optical and Dielectric Properties of Thin Film Indium Selenide P Mishra, V Srivastava, S Sharma 2019 IEEE 16th India Council International Conference (INDICON), 1-4 , 2019 2019 Citations: 1
Impulse response of Ge_2Sb_2Te_5-based ultrafast photodetector integrated with SOI waveguide V Srivastava, P Mishra, Sunny Chinese Optics Letters 17 (10), 100401 , 2019 2019 Citations: 1
