Improved Jiles–Atherton Magnetic Core Model and Its SPICE Implementation Vadim Kuznetsov Electronics Switzerland, 2026 This research presents an improved version of the Jiles–Atherton (J.-A.) ferromagnetic core model. The presented model eliminates the distortion of minor hysteresis loops and achieves better matching with measured data for minor loops—a well-known weak point of the unmodified J.-A. model. The proposed J.-A. model extension is backward compatible with the basic model version and requires two or four additional parameters. In addition to providing model equations, this paper considers the practical implementation of the improved J.-A. model using SPICE circuit simulation tools. The developed modular SPICE macromodel set is compatible with both open-source and proprietary circuit simulation software, and it allows for the construction of transformer schematics of any complexity. The proposed model shows a good match with measurement results for hysteresis loops and transient waveforms in transformer circuits.
Corner Simulation of CMOS Analog Integrated Circuit Taking into Account Radiation Influence Sergei Ryzhov, Vadim Kuznetsov, Vladimir Andreev Micromachines, 2026 This paper proposes a corner analysis approach for CMOS circuits taking into the account radiation effects. The presented simulation approach is implemented using the open-source design automation (EDA) software QUCS-S 25.2.0 and Ngspice 45. It was developed a radiation-sensitive field-effect transistor (RADFET) SPICE macromodel representing threshold voltage shift versus radiation dose. The extraction procedure for this model is based on statistical measurements of pMOS transistors and process corner models (Slow, Typical, Fast) and involves percentile analysis. The article proposes an original design of the RADFET-based radiation sensor with RADFET device and CMOS readout circuit placed on the same die, which allows us to simplify the dosimeter schematic. The sensor output parameter dependency on process parameters, supply voltage, and temperature was investigated using the proposed simulation approach.
The Compact Model Synthesis for the RADFET Device Vadim Kuznetsov, Dmitrii Andreev, Vladimir Andreev, Sergei Piskunov, Anatoli I. Popov Technologies, 2025 This article proposes a compact model for the radiation-sensitive field-effect transistor (RADFET). The model represents the basic I–V characteristics of the MOSFET device and includes the effects of threshold voltage shift as a function of absorbed dose and gate bias, gate tunneling current, gate radiation current, dose accumulation, and fading. It accurately represents high-field effects in the gate dielectric of the RADFET device. Both the Fowler–Nordheim gate tunneling current and the radiation-induced gate current are incorporated into the model. The model enables determination of the radiation-induced charge during RADFET operation under high-field injection conditions, thereby improving the precision of accumulated dose readout. The proposed model is fully compatible with SPICE-based circuit simulators and can represent any type of RADFET device, including those with high-k gate dielectrics. Furthermore, the model was developed entirely using open-source circuit simulation tools.
Microstrip Line Modeling Taking into Account Dispersion Using a General-Purpose SPICE Simulator Vadim Kuznetsov Journal of Low Power Electronics and Applications, 2025 XSPICE models for a generic transmission line, a microstrip line, and coupled microstrips are presented. The developed models extend general-purpose circuit simulation tools using RF circuits design features. The models could be used for circuit simulation in frequency, DC, and time domains for any active or passive RF or microwave schematic (including microwave monolithic integrated circuits—MMICs) involving transmission lines. The presented models could be used with any circuit simulation backend supporting XSPICE extensions and could be integrated without patching the core simulator code. The presented XSPICE models for microstrip lines take into account the frequency dependency of characteristic impedance and dispersion. The models were designed using open-source circuit simulation software. This study provides a practical example of the low-noise RF amplifier (LNA) design with Ngspice simulation backend using the proposed models.
ESD Induced Irreversible Degradation Processes in the Semiconductor Devices Vadim Kuznetsov, Vladimir Andreev Proceedings of the 2024 6th International Youth Conference on Radio Electronics Electrical and Power Engineering Reepe 2024, 2024 This paper considers physical processes related to the electrostatic discharge (ESD) inducing irreversible failure in the microelectronic devices. The human body model (HBM) destructive voltage evaluation method using the energy equivalence assumption is proposed in this work. This method allows estimating the integrated circuit $\\text{HBM}$ rating by the known transmission line pulse (TLP) test result without performing an HBM test. Experimental data confirming the proposed evaluation method is provided.
HBM, MM, and CBM ESD ratings correlation hypothesis Vadim Kuznetsov IEEE Transactions on Electromagnetic Compatibility, 2018 The purpose of this paper is to investigate a method to derive component metal–metal electrostatic discharge (ESD) rating from its human body model (HBM) ESD rating. Symbolic computations and equivalent circuit simulations are used for this purpose. It can be seen from the components datasheets, that the machine model (MM) rating is often ten times less than the HBM rating. This paper proposes an explanation of this dependence derived from thermal failure physics. This paper presents a method of the ESD rating estimation based on injected power or charge analysis. This estimation method also could be applied for the CDM and charged board model (CBM) cases. We obtained a good correlation of HBM and MM ratings and a limited correlation of HBM and CBM/CDM ratings. The CBM case for power mosfet also was considered.
Improvements in Qucs-S equation-defined modelling of semiconductor devices and IC's Mike Brinson, Vadim Kuznetsov Proceedings of the 24th International Conference on Mixed Design of Integrated Circuits and Systems Mixdes 2017, 2017 The Qucs Equation-Defined Device was introduce roughly ten years ago as a versatile behavioural simulation component for modelling the non-linear static and dynamic properties of passive components, semiconductor devices and IC macromodels. Today, this component has become an established element for building experimental device simulation models. It's inherent interactive properties make it ideal for device and circuit modelling via Qucs schematics. Moreover, Equation-Defined Devices often promote a clearer understanding of the factors involved in the construction of complex compact semiconductor simulation models. This paper is concerned with recent advances in Qucs-S/Ngspice/XSPICE modelling capabilities that improve model construction and simulation run time performance of Equation-Defined Devices using XSPICE model syntheses. To illustrate the new Qucs-S modelling techniques an XSPICE version of the EPFL EKV v2.6 long channel transistor model together with other illustrative examples are described and their performance simulated with Qucs-S and Ngspice.
Improved Jiles–Atherton Magnetic Core Model and Its SPICE Implementation V Kuznetsov Electronics 15 (5), 1009 , 2026 2026
Corner Simulation of CMOS Analog Integrated Circuit Taking into Account Radiation Influence S Ryzhov, V Kuznetsov, V Andreev Micromachines 17 (3), 300 , 2026 2026
The Compact Model Synthesis for the RADFET Device V Kuznetsov, D Andreev, V Andreev, S Piskunov, AI Popov Technologies 13 (11), 492 , 2025 2025 Citations: 8
Microstrip line modeling taking into account dispersion using a general-purpose SPICE simulator V Kuznetsov Journal of Low Power Electronics and Applications 15 (3), 42 , 2025 2025 Citations: 6
Semiconductor device compact simulation taking into account the ESD effect and using the free circuit simulation software VV Kuznetsov, VV Andreev, SA Lomakin 2025 7th international youth conference on radio electronics, electrical and … , 2025 2025 Citations: 3
Electrostatic discharge protection devices macromodelling using open-source tools VV Kuznetsov, VV Andreev, SA Lomakin Труды Института системного программирования РАН 37 (3), 122-131 , 2025 2025
Foss tools usage for circuit simulation in analog IC design VV Kuznetsov, DV Andreev, GK Grishin Труды Института системного программирования РАН 37 (2), 20-32 , 2025 2025
Transmission line pulse setup for electrostatic discharge robustness testing of the semiconductor devices VV Kuznetsov, VV Andreev Instruments and Experimental Techniques 67 (2), 268-273 , 2024 2024 Citations: 6
ESD Induced Irreversible Degradation Processes in the Semiconductor Devices V Kuznetsov, V Andreev 2024 6th International Youth Conference on Radio Electronics, Electrical and … , 2024 2024 Citations: 3
Qucs-S help documentation release 0.0. 21-S M Brinson, V Kuznetsov Read the Docs Create, host, and browse documentation. , 2018 2018
Extended behavioural device modelling and circuit simulation with Qucs-S ME Brinson, V Kuznetsov International Journal of Electronics 105 (3), 412-425 , 2018 2018 Citations: 17
Improvements in Qucs-S equation-defined modelling of semiconductor devices and IC's M Brinson, V Kuznetsov 2017 MIXDES-24th International Conference" Mixed Design of Integrated … , 2017 2017 Citations: 6
An outline of Qucs-S compact device modelling: History and capabilities: Part 1: Equation-Defined Device (EDD) modelling to Verilog-A module synthesis M Brinson, V Kuznetsov IEEE ED Mini-Colloquium, 1-33 , 2017 2017
An outline of Qucs-S compact device modelling: History and capabilities: Part 2 XSPICE Code Models; basic properties to model synthesis, and beyond M Brinson, V Kuznetsov IEEE ED Mini-Colloquium, 1-39 , 2017 2017
HBM, MM, and CBM ESD ratings correlation hypothesis V Kuznetsov IEEE Transactions on Electromagnetic Compatibility 60 (1), 107-114 , 2017 2017 Citations: 22
The first stable release of Qucs-S and advances in XSPICE model synthesis M Brinson, V Kuznetsov Spring MOS-AK Workshop , 2017 2017
A new approach to compact semiconductor device modelling with Qucs Verilog‐A analogue module synthesis ME Brinson, V Kuznetsov International Journal of Numerical Modelling: Electronic Networks, Devices … , 2016 2016 Citations: 24
Qucs-S a maturing GPL software package for circuit simulation and compact modelling of current and emerging technology devices M Brinson, V Kuznetsov Modeling of Systems and Parameter Extraction Working Group: 14th MOS-AK … , 2016 2016 Citations: 3
Current conveyor macromodels for wideband RF circuit design M Brinson, V Kuznetsov 2016 MIXDES-23rd International Conference Mixed Design of Integrated … , 2016 2016 Citations: 3
FOSS as an efficient tool for extraction of MOSFET compact model parameters D Tomaszewski, G Głuszko, M Brinson, V Kuznetsov, W Grabinski 2016 MIXDES-23rd International Conference Mixed Design of Integrated … , 2016 2016 Citations: 3
MOST CITED SCHOLAR PUBLICATIONS
Qucs-0.0. 19S: A new open-source circuit simulator and its application for hardware design M Brinson, V Kuznetsov 2016 International Siberian Conference on Control and Communications (SIBCON … , 2016 2016.0 Citations: 31
Charged board model ESD simulation for PCB mounted MOS transistors V Kuznetsov, L Kechiev IEEE Transactions on Electromagnetic Compatibility 57 (5), 947-954 , 2015 2015.0 Citations: 29
A new approach to compact semiconductor device modelling with Qucs Verilog‐A analogue module synthesis ME Brinson, V Kuznetsov International Journal of Numerical Modelling: Electronic Networks, Devices … , 2016 2016.0 Citations: 24
HBM, MM, and CBM ESD ratings correlation hypothesis V Kuznetsov IEEE Transactions on Electromagnetic Compatibility 60 (1), 107-114 , 2017 2017.0 Citations: 22
Extended behavioural device modelling and circuit simulation with Qucs-S ME Brinson, V Kuznetsov International Journal of Electronics 105 (3), 412-425 , 2018 2018.0 Citations: 17
Qucs equation-defined and Verilog-A RF device models for harmonic balance circuit simulation M Brinson, V Kuznetsov 2015 22nd International Conference Mixed Design of Integrated Circuits … , 2015 2015.0 Citations: 12
The Compact Model Synthesis for the RADFET Device V Kuznetsov, D Andreev, V Andreev, S Piskunov, AI Popov Technologies 13 (11), 492 , 2025 2025.0 Citations: 8
Qucs: Improvements and new directions in the gpl compact device modelling and circuit simulation tool. MOS-AK Workshop, Grenoble M Brinson, R Crozier, V Kuznetsov, C Novak, B Roucaries, F Schreuder, ... Citations: 8
Microstrip line modeling taking into account dispersion using a general-purpose SPICE simulator V Kuznetsov Journal of Low Power Electronics and Applications 15 (3), 42 , 2025 2025.0 Citations: 6
Transmission line pulse setup for electrostatic discharge robustness testing of the semiconductor devices VV Kuznetsov, VV Andreev Instruments and Experimental Techniques 67 (2), 268-273 , 2024 2024.0 Citations: 6
Improvements in Qucs-S equation-defined modelling of semiconductor devices and IC's M Brinson, V Kuznetsov 2017 MIXDES-24th International Conference" Mixed Design of Integrated … , 2017 2017.0 Citations: 6
New active filter synthesis tool for Qucs open-source circuit simulator L Kechiev, N Kruchkov, V Kuznetsov 2016 International Siberian Conference on Control and Communications (SIBCON … , 2016 2016.0 Citations: 5
Spice4qucs help documentation. User manual and reference material M Brinson, V Kuznetsov Citations: 5
Semiconductor device compact simulation taking into account the ESD effect and using the free circuit simulation software VV Kuznetsov, VV Andreev, SA Lomakin 2025 7th international youth conference on radio electronics, electrical and … , 2025 2025.0 Citations: 3
ESD Induced Irreversible Degradation Processes in the Semiconductor Devices V Kuznetsov, V Andreev 2024 6th International Youth Conference on Radio Electronics, Electrical and … , 2024 2024.0 Citations: 3
Qucs-S a maturing GPL software package for circuit simulation and compact modelling of current and emerging technology devices M Brinson, V Kuznetsov Modeling of Systems and Parameter Extraction Working Group: 14th MOS-AK … , 2016 2016.0 Citations: 3
Current conveyor macromodels for wideband RF circuit design M Brinson, V Kuznetsov 2016 MIXDES-23rd International Conference Mixed Design of Integrated … , 2016 2016.0 Citations: 3
FOSS as an efficient tool for extraction of MOSFET compact model parameters D Tomaszewski, G Głuszko, M Brinson, V Kuznetsov, W Grabinski 2016 MIXDES-23rd International Conference Mixed Design of Integrated … , 2016 2016.0 Citations: 3
Improved Jiles–Atherton Magnetic Core Model and Its SPICE Implementation V Kuznetsov Electronics 15 (5), 1009 , 2026 2026.0
Corner Simulation of CMOS Analog Integrated Circuit Taking into Account Radiation Influence S Ryzhov, V Kuznetsov, V Andreev Micromachines 17 (3), 300 , 2026 2026.0
