Yaw Wang CHAI
@titech.ac.jp
School of Materials and Chemical Technology
Tokyo Institute of Technology
> Highly caliber MATERIALS SCIENTIST with a good metallurgical research background.
> Experienced in phase transformations, interfacial defects, microstructure, and crystallographic characterization in a
range of structural and functional materials;
- shape memory alloys: Ti-Nb & CuZnAl,
- thermoelectric materials: half-Heusler, -FeSi2, Mg2(Si, Sn)
- heat resistant materials: High-Cr ferritic stainless steels, Co3AlC and Ni3Al, Ti alloys
> Skilled in a wide range of microstructure and properties characterization techniques: SEM, EPMA, TEM, HRTEM, STEM-
EDS, STEM-HAADF, in-situ heating TEM, twin-jets electropolishing, focus ion beam, ion-milling, XRD, DTA, DSC, laser flash,
ZEM-3.
> Good communication and presentation skills, team player, practical approach to problem-solving, self-motivated,
positive thinker, inquisitive, and working independently.
EDUCATION
The University of Liverpool, United Kingdom
RESEARCH INTERESTS
Phase transformations in solid materials, interfacial structure analyses & crystallography, thermoelectric materials, shape memory alloys
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Dosung Lee, Mariko Tsuyuguchi, Manabu Watanabe, Yaw Wang Chai, Takako Yamashita, Shin Ishikawa, and Yoshisato Kimura
Iron and Steel Institute of Japan
Shintaro Kondo, Yaw Wang Chai, Kentaro Kanai, Lee Dosung, Manabu Watanabe, Shin Ishikawa, Takako Yamasita, and Yoshisato Kimura
Elsevier BV
Shin Ishikawa, Takako Yamashita, Tomohito Kiryu, Yaw Wang Chai, and Yoshisato Kimura
Elsevier BV
Mizuki Sato, Yaw Wang Chai, and Yoshisato Kimura
American Chemical Society (ACS)
The microstructure of the half-Heusler phase separation in half-Heusler (HH) MNiSn(M = Ti, Zr) intermetallic compounds has been investigated systematically in this study. Scanning electron microscopy observations from a range of (Tix, Zr1-x)NiSn have revealed the HH single phase at high temperature formed into many HH domains of various HH compositions with different Ti/Zr concentration ratios when x > 0.1. The formation of Ti-rich and Zr-rich HH domains with rather large size (up to several hundred μm in diameter) is thought to originate from a combination of the liquid solidification process and followed by an HH phase decomposition process within a miscibility gap between the TiNiSn and ZrNiSn HH phases. We have noticed that in addition to the mass and size difference based phonon scattering, sharp interfaces between the Ti-rich and Zr-rich HH domains containing high density of misfit dislocations could provide additional phonon scattering centers and reduced thermal conductivity of the alloys. Moreover, the cyclic heat treatment process at temperatures near the HH phase-decomposition's critical temperature could modify the HH domains' microstructure to become more diffuse, coherent with a more comprehensive length scale, and globular shape. These diffuse and coherent Ti-rich HH1/Zr-rich HH2 interfaces can provide an additional enhancement of phonon scattering and thereby result in a more considerable reduction of thermal conductivity than those of relatively less diffuse ones. We anticipate a similar approach of using cyclic heat treatment to modify the microstructure and consequently lead to further enhancement of phonon scattering can also apply to many other thermoelectric alloy systems possessing a miscibility gap.
Yaw Wang Chai, Ko Kato, Chieri Yabu, Shin Ishikawa, and Yoshisato Kimura
Elsevier BV
Abstract Even though it is widely accepted that the Laves phase is a promising strengthener for chromium-containing stainless steels, there is little information available on its microstructural evolution and growth. Therefore, in this study, we analysed the behaviour of Laves (C14) precipitates in high-Cr ferritic stainless steel, Fe-20Cr-2Mo-0.5Nb (at%), annealed at 1073 K for different time periods. A high density of (Fe,Cr)2(Mo,Nb) precipitates was formed in the α matrix during annealing. Morphological evolution in the Laves phase followed the sequence of spheroidal → faceted ellipsoidal → faceted needle-like → faceted plate-like. The Laves phase is related to the α matrix by two sets of orientation relationships, viz. OR-1: [ 1 ¯ 1 ¯ 2 ] α / [ 1 2 ¯ 10 ] L , [ 111 ] α / [ 0 1 ¯ 10 ] L , and ( 1 ¯ 10 ) α / ( 000 1 ¯ ) L and OR-2: [ 1 1 ¯ 0 ] α / [ 0001 ] L , [ 113 ] α / [ 1 ¯ 1 ¯ 20 ] L , and ( 3 ¯ 3 ¯ 2 ) α / ( 1 1 ¯ 00 ) L . The habit plane of the Laves phase was found to deviate slightly from the ( 3 ¯ 3 ¯ 2 ) α / ( 1 1 ¯ 00 ) L plane. Interfacial defects, namely disconnections (bD, h) and super disconnections (mbD, mh), observed experimentally along the habit plane, were consistent with theoretical results based on OR-2 as the reference coordinate frame. The Burgers vector bD exhibited an edge component b y D (0.1539 nm) parallel to Y / [ 113 ] α / [ 1 ¯ 1 ¯ 20 ] L and a small normal component b z D (0.0747 nm) perpendicular to the terraces; meanwhile, the overlap step height h = d ( 1 1 ¯ 00 ) L . The morphological evolution of Laves precipitates was described based on the lateral motion of disconnections and super disconnections on { 3 ¯ 3 ¯ 2 } α / { 1 1 ¯ 00 } L terraces in the 〈 113 〉 α / 〈 1 ¯ 1 ¯ 20 〉 direction. Arrays of the disconnections (bD, h) were found to be capable of accommodating the misfit strain on { 3 ¯ 3 ¯ 2 } α / { 1 1 ¯ 00 } L terraces.
Zhifang Zhou, Yaw Wang Chai, Yu Ikuta, Yonghoon Lee, Yuanhua Lin, and Yoshisato Kimura
American Chemical Society (ACS)
Solid solutioning of Mg2(Si, Sn) has been a promising approach in reducing thermal conductivity and leads to improvement of thermoelectric performance. In addition to the Mg2(Si, Sn) solid solutions, we have noticed layered structure with gradient composition, which is formed by non-equilibrium solidification and peritectic reaction process, can provide further reduction of thermal conductivity of the Mg2(Si, Sn) solid solutions. All the layers of the layered structure have the same face centered cubic (FCC)-based structure but varying Sn/Si concentration ratios in each layer. The interfaces between the layers are semi-coherent reticulating with different numbers of misfit dislocations. Such interfacial structure brings large numbers of phonon scattering sources, resulting in the further reduction of thermal conductivity in the Mg2(Si, Sn) solid solutions. Consequently, the undoped Mg2Si0.75Sn0.25 containing higher density of the layered structure has relatively lower thermal conductivity, 1.9 W m -1 K -1 at 523 K than Mg2Si0.25Sn0.75 with much lower density of the layered structure, 2.3 W m -1 K -1 at 523 K.
Haochun Tang, Tso-Fu Mark Chang, Yaw-Wang Chai, Chun-Yi Chen, Takashi Nagoshi, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, and Masato Sone
MDPI AG
Hierarchical structures of 20 nm grains embedded with twins are realized in electrodeposited Au–Cu alloys. The electrodeposition method allows refinement of the average grain size to 20 nm order, and the alloying stabilizes the nanoscale grain structure. Au–Cu alloys are face-centered cubic (FCC) metals with low stacking fault energy that favors formation of growth twins. Due to the hierarchical structure, the Hall–Petch relationship is still observed when the crystalline size (average twin space) is refined to sub 10 nm region. The yield strength reaches 1.50 GPa in an electrodeposited Au–Cu alloy composed of 16.6 ± 1.1 nm grains and the average twin spacing at 4.7 nm.
Xinhao Wan, Geng Liu, Ran Ding, Nobuo Nakada, Yaw-Wang Chai, Zhigang Yang, Chi Zhang, and Hao Chen
Elsevier BV
Abstract Retained austenite plays a significant role in the strength-ductility balance of medium Mn steels. In this contribution, a new processing route (Flash-Austenite Reversion Treatment, Flash-ART) was proposed to design retained austenite with a compositional core-shell structure in an Fe-0.20C-7.76Mn-1.99Al (wt%) steel. It was interestingly found that the austenite core, which should transform into martensite based on its composition and size, was stabilized by the Mn enriched shell. Flash-ART allows us to obtain more retained austenite compared with the conventional ART.
Yoshisato Kimura, Ko Kato, and Yaw Wang Chai
Springer Science and Business Media LLC
Yoshisato Kimura, Masashi Yamada, and Yaw Wang Chai
Japan Institute of Metals
Thermoelectric alloys having nearly ¢-FeSi2 single-phase microstructure were fabricated by sintering gas-atomized powders using the hot pressing. Since the ¢-FeSi2 phase is formed by the peritectoid reaction between 3⁄4-FeSi and ¡-Fe2Si5 phases, the reaction rate for the completion of ¢-FeSi2 phase transition strongly depends on the diffusion path length which is governed by the morphology and size of solidified microstructure consisting of 3⁄4 and ¡ phases. It has been indicated by the wedge drop cast using arc melting that producing fine and fully eutectic microstructure by rapid solidification is quite effective for the completion of ¢-FeSi2 phase transition. An argon gas atomization process was chosen as a rapid solidification technique to produce fine and homogeneous alloy powder having fully 3⁄4 and ¡ eutectic microstructure, which was turned out to be beneficial for the formation of ¢-FeSi2 single-phase microstructure by a short time annealing even within 30 minutes at 1073K for the gas-atomized powders with the averaged particles size of 20 μm and under in diameter. Thermoelectric properties were evaluated for these nearly single-phase ¢-FeSi2 sintered alloys with the addition of doping elements, n-type Co and p-type Mn, 1.67 at% respectively. The absolute value of Seebeck coefficient and electrical conductivity are higher in a p-type Mn alloy than an n-type Co alloy. [doi:10.2320/matertrans.MB201805]
Yoshisato Kimura, Hiroaki Otani, Ayaka Mori, and Yaw-Wang Chai
Springer Science and Business Media LLC
Thermoelectric composite alloys consisting of the β-FeSi2 matrix and SiO2 particles dispersion were fabricated by a so-called combined reactions sintering process using reduction and oxidation reactions between eutectoid Si decomposed from α-Fe2Si5 and added Fe-oxide powder. Typical microstructure may include some of residual eutectoid Si particles, intermediate product Fe2SiO4 particles, and/or remaining reduced Fe particles depending on the composite alloy compositions and the process conditions. Partitioning of doping element, n-type Co or p-type Mn, during the process plays an important role to control the optimum carrier concentration of the composite alloys. Thermal conductivity can be reduced, as expected, by the dispersion of SiO2 particles. The solubility of doping elements, Co, Mn, Al, and Ru was evaluated in α-Fe2Si5 at 1373 K and in β-FeSi2 at 1073 K being based on the isotherm determination. It is suggested that suitable dopants for the present process are n-type Co and p-type Mn, since they have sufficiently large solubility around 10 at% in both α-Fe2Si5 and β-FeSi2 phases.
Yaw Wang Chai, Toshinori Oniki, Takahiro Kenjo, and Yoshisato Kimura
Elsevier BV
Abstract The microstructure and thermoelectric properties of an off-stoichiometric quaternary (Ti 0.2 ,Zr 0.8 )Ni 1.1 Sn half-Heusler (HH) alloy was investigated in three heating cycles. A high density of coherent nanoprecipitates with an average diameter of ∼13 nm and an interprecipitate spacing of ∼6 nm was observed in the alloy. Formation of the extremely fine nanoprecipitates, most likely to be the ‘full’ Heusler (FH) phase, was not only strongly related to the degree of excess Ni concentration ratio in the alloy, but also appeared to be affected by the Ti–Zr substitutions. We noticed the behaviour of both electrical resistivity ( ρ ) and Seebeck coefficient ( S ) of the alloy was closely associated with the microstructure evolution of the FH-nanoprecipitates, which depended on their phase instability at elevated temperature and the cyclic heating process. The ρ and S reduced after the 1st heating cycle and stabilised thereafter in the subsequent heating cycles. Despite of the presence of the metallic FH-nanoprecipitates, the stabilised S maintained similar magnitudes to S of the ZrNiSn (without FH-nanoprecipitates) and did not show degradation of S as previously seen in the ZrNi 1.1 Sn containing relatively much larger FH-nanoprecipitates. The high density of FH-nanoprecipitates and the presence of Ti–Zr point defects were responsible for the significant reduction of thermal conductivity ( κ ) of the alloy, about 30% and 20% less than κ of the ZrNiSn and ZrNi 1.1 Sn alloys, respectively. Moreover, further reduction of κ was noticed due to formation of the diffuse HH/FH interfaced FH-nanoprecipitates from the cyclic heating process. Consequently, the alloy has shown a maximum dimensionless figure of merit ( ZT ) up to 0.81 at 870 K.
Yaw Wang Chai, Toshinori Oniki, and Yoshisato Kimura
Elsevier BV
Abstract The microstructure and thermoelectric properties of a ZrNi 1.1 Sn half-Heusler (HH) alloy have been investigated. The alloy was found to contain a high density of nanosized Heusler precipitates that appeared as platelets and discs. These Heusler nanoprecipitates were responsible for a large improvement of the Seebeck coefficient of the alloy at room temperature compared with the ZrNiSn, which contained no Heusler nanoprecipitates. However, the improvement reduced with increasing temperature due to the phase instability of the Heusler nanoprecipitates. Nevertheless, the reduction of the Seebeck coefficient could be stabilized after heating and cooling the alloy from beyond the precipitate dissolution temperature to below the phase decomposition temperature due to stabilization of the Heusler nanoprecipitates. The size of the stabilized precipitates was significantly reduced to ZT of the ZrNi 1.1 Sn was 0.75 at 900 K, which was an improvement of ∼40% compared with that of the ZrNiSn.
Kentaro Yoshioka, Yaw Wang Chai, and Yoshisato Kimura
Japan Institute of Metals
Yoshisato Kimura, Koichiro Takeno, Ayaka Mori, and Yaw-Wang Chai
Japan Institute of Metals
bFeSi2 is an ecofriendly thermoelectric material for hightemperature applications. In the present work, we demonstrate the validity of a new proposed fabrication process for compositetype thermoelectric alloys comprising a bFeSi2 matrix and dispersed SiO2 particles (including Fe2SiO4 particles). The starting materials were singlephase aFeSi2 alloy powder and Fe2O3 powder. We propose that the following reaction sequence occurs during the sintering process: (1) aFeSi2 decomposes into b FeSi2 and Si via the eutectoid reaction, (2) SiO2 is formed by the oxidation of Si, and (3) bFeSi2 is additionally formed by the solidphase reaction between eutectoid Si and reduced Fe that is formed by the reduction of Fe2O3. The microstructure of the composite alloys formed by the combined reactions during the sintering process was observed and characterized mainly using scanning transmission electron microscopy in conjunction with energydispersive Xray spectroscopic chemical analyses and X ray diffraction. The electrical and thermoelectric properties of the composite alloys were measured at temperatures from 300 to 1073 K. High Seebeck coefficient values were observed for ntype Codoped composite alloys from -150 to -250 mV・K-1 and for ptype Mndoped alloys from 200 to 500 mV・K-1. The partitioning of the Co and Mn dopants from the aFeSi2 phase to the b FeSi2 phase throughout the process is important for controlling the Seebeck coefficient. The electrical resistivity is lowered by the dispersed SiO2 particles that are expected to reduce the lattice thermal conductivity of the composite alloys. [doi:10.2320/jinstmet.JA201518]
Yoshisato Kimura, Yaw-Wang Chai, Toshinori Oniki, Takahiko Itagaki, and Shinya Otani
Springer Science and Business Media LLC
ABSTRACTHalf-Heusler MNiSn (M=Ti, Zr, Hf) compounds are well-known, excellent n-type thermoelectric materials. The n-type Seebeck coefficients of ZrNiSn are reduced because of the precipitation of the metallic Heusler ZrNi2Sn phase. An excellent n-type Seebeck coefficient can be converted to p-type based on the vacancy site occupation by the solute Co atoms in the half-Heusler TiNiSn phase as well as ZrNiSn. The Heusler phase precipitates, including their precursor nano-structure in the half-Heusler matrix and the vacancy site occupation of the half-Heusler phase, are regarded as lattice defects based on the crystallographically and thermodynamically close relationship between half-Heusler and Heusler phases.
Yoshisato Kimura and Yaw-Wang Chai
Springer Science and Business Media LLC
Half-Heusler compounds are excellent thermoelectric materials. A characteristic of the half-Heusler–type ordered structure is the vacancy site that occupies one-fourth of all the lattice points. Therefore, a half-Heusler ABX phase (where A and B are typically transition metal elements, such as Ti, Zr, and Hf, and X represents a half-metal element such as Sn or Sb) has a crystallographically close relationship with a Heusler AB2X phase in the sense that the vacancy site in the half-Heusler phase is filled with B atoms in the Heusler phase. The thermoelectric properties are improved or affected by point lattice defects related to the vacancy site and the B site, such as the antisite atom B in the vacancy site, vacancies in the B site, and vacancy-site occupancy by quaternary C atoms. A modulated-like nanostructure due to point defects regarding vacancies and Ni atoms is formed for an instance in ZrNiSn alloys even close to the stoichiometric composition. Ni-rich nanoclusters are locally formed by excessive Ni antisite atoms in the vacancy site, which work as precursors of Heusler precipitates (TiNi2Sn, ZrNi2Sn, and so forth). The vacancy-site occupation in ZrNiSn with Co and Ir results in the drastic conversion of thermoelectric properties from n type to p type, and the effective reduction of the lattice thermal conductivity.
Yaw Wang Chai, Kentaro Yoshioka, and Yoshisato Kimura
Elsevier BV
The single-phase half-Heusler microstructure of ZrNiSn, (Zr 0.5 , Hf 0.5 )NiSn and Zr(Ni, Co 0.2 )Sn alloys was found to contain a high density of Heusler lattice bands 2–7 nm wide. These nanoscale Heusler lattice bands originated from clustering of Ni and/or Co antisites via occupation of structural vacancies by excess Ni or (Ni+Co) concentrations. The presence of these lattice point defects and their subsequent clustering could result in the reduction of thermal conductivity of the half-Heusler alloys.
Yoshisato Kimura, Masato Kawakita, Hiroyasu Yuyama, and Yaw-Wang Chai
Springer Science and Business Media LLC
ABSTRACTSingle crystals of E21 (L12) Ni3AlC1-x were prepared by the unidirectional solidification using the optical floating zone melting method to determine their mechanical properties. Particularly the effects of interstitial carbon atoms on mechanical properties were evaluated by compression tests at room temperature. Operative slip system of E21 Ni3AlC is {111}<011> type which is the same as that of L12 Ni3Al. Strength of Ni3AlC single crystals increases with carbon concentration due to the solid solution effect, though the stress relief of yielding behavior is enhanced at the intermediate carbon content at around 3at%. A large gap appears in the carbon concentration dependence of critical resolved shear stress (as well as yield stress) at almost the same carbon content. This discontinuity in strengthening is attributed to the interaction between multiple solute carbon atoms and mobile dislocations.
Yaw Wang Chai and Yoshisato Kimura
Elsevier BV
Abstract The microstructures of thermoelectric TiNiSn half-Heusler alloys have been studied in detail. For concentration ratios that are slightly rich in Ni, a high density of Heusler-phase nanosized precipitates tended to precipitate within a half-Heusler matrix. The morphology and average size of the Heusler nanoprecipitates were very sensitive to the Ni concentration ratio in the half-Heusler matrix of the alloys. Smaller Heusler nanoprecipitates with coherent ellipsoidal ( HH orientations. Interfacial defects between the Heusler and half-Heusler phases, as well as lattice point defects, Ni antisites and vacancies, were found to be closely related to the formation of the Heusler nanoprecipitates. A mechanism has been proposed in this study to describe the coarsening of the Heusler nanoprecipitates via the formation of lattice point defects and interfacial defects.
Yaw Wang Chai and Yoshisato Kimura
AIP Publishing
The microstructure of half-Heusler TiNiSn alloy has been investigated in this study. A high density of coherent nanosized Heusler precipitates was found within the half-Heusler matrix. Formation of these Heusler precipitates occurs by a phase separation process, where a single phase solid solution (half-Heusler-Heusler) decomposes into an equilibrium two-phase mixture of half-Heusler and Heusler regions. These Heusler nanoprecipitates improve the thermoelectric properties of the alloy.
Yoshisato Kimura, Toshiyasu Tanoguchi, Yasuhiro Sakai, Yaw-Wang Chai, and Yoshinao Mishima
Springer Science and Business Media LLC
ABSTRACTThe half-Heusler compound ZrNiSn has a quite small solubility for Ni from the stoichiometric composition towards the Ni-rich direction since Ni atoms are not supposed to occupy the vacancy-site. Nevertheless, Co and Ir atoms preferably occupy the vacancy-site of ZrNiSn, which is contrary to the prediction that they would substitute for Ni sites. This implies that the phase stability of the compound gradually changes toward that of the Heusler compound Zr(Ni,M)2Sn (M = Co, Ir). It has been confirmed that there exists a two-phase field between half-Heusler Zr(Ni,Cox)Sn and Heusler Zr(Ni,Co)2Sn. The n-type thermoelectric property of ZrNiSn can be converted to p-type by the addition of Co and Ir within the compositional range of the half-Heusler phase. The occupation of vacancy sites by Co and Ir atoms leads to a drastic reduction in the thermal conductivity owing to the enhancement of phonon scattering. With further Co addition, the Heusler phase Zr(Ni,Co)2Sn alloys show metallic behavior.
Yoshisato Kimura, Chihiro Asami, Yaw Wang Chai, and Yoshinao Mishima
Trans Tech Publications, Ltd.
A new fabrication process was proposed for half-Heusler type TiNiSn thermoelectric alloys. Based on the result that the TiNiSn phase can be formed easily at the Sn(Liquid)/TiNi(Solid) interface, the liquid-solid reaction-sintering process was developed using TiNi and Sn powders. The TiNi compound powders were prepared by the atomization method using argon gas atmosphere. We have fabrictaed nearly single-phase TiNiSn alloys and evaluated their thermoelectrical properties; the presnt TiNiSn alloys have large electrical power factor of about 3.5 mWm-1K-2, and the maximum value of dimensionless figure of merit, ZT = 0.67, can be achieved at around 700 K even without tuning of the carrier concentration through alloying elements.
Y.W. Chai, H.Y. Kim, H. Hosoda, and S. Miyazaki
Elsevier BV
Abstract Self-accommodation morphology of the α ″ martensites in Ti–Nb shape memory alloys with Nb content ranging from 20 to 24 at.% was investigated. Hollow and solid triangular morphologies consisting of three α ″ variants were found to be the α ″ self-accommodation morphologies. The α ″ variants are related to each other by twinning on { 1 1 ¯ 1 } α ″ . A V-shaped morphology consisting of two α ″ variants coupled with a solid triangular morphology consisting of three α ″ variants was found to be another type of self-accommodation morphology. The α ″ variants from the V-shaped morphology are related by twinning on { 1 1 1 } α ″ , whereas the α ″ variants from the solid triangular morphology are related to each other by twinning on { 1 1 ¯ 1 } α ″ . Pairs of crystallographically equivalent { 1 1 ¯ 1 } α ″ twinning dislocations with steps of opposite signs were found to cause the overall orientation of the twinning terraces and steps to be parallel to the { 1 1 ¯ 1 } α ″ twinning interface.
Y.W. Chai, H.Y. Kim, H. Hosoda, and S. Miyazaki
Elsevier BV
Abstract The structure of the martensite (α″)/martensite (α″) and parent (β)/martensite (α″) interfaces in a series of binary Ti–Nb alloys with Nb content ranging from 20 to 24 at.% was investigated. Both the α″/α″ and β/α″ interfaces comprised a series of { 2 1 ¯ 1 } β / / { 1 1 0 } α ″ terraces and steps when viewed edge-on (close to [ 0 0 1 ] α ″ ). Interfacial defects, particularly the transformation disconnections (b, h) superimposed along the terrace–step interface structure, have been identified. They were responsible for accommodating most of the transformation strain along the α″/α″ and β/α″ interfaces. Using the parameters b and h, the prediction of the α″ habit plane based on the topological model agreed well with the prediction from the phenomenological theory as well with experimental observations. The α″ habit plane in Ti–20Nb alloy is close to { 7 5 ¯ 5 ¯ } β and moves towards { 4 3 ¯ 3 ¯ } β in Ti–22Nb and Ti–24Nb alloys. The remaining transformation strain along the β/α″ interface was found to be accommodated by Type 1 twinning on ( 1 1 1 ) α ″ with Burgers vector bLIS close to 〈 2 ¯ 1 ¯ 3 〉 α ″ ( ≡ 〈 1 ¯ 1 ¯ 2 ¯ 〉 β ) .