Alok Ranjan

@chalmers.se

Postdoctoral Researcher, Department of Physics
Chalmers University of Technology

Alok Ranjan


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https://researchid.co/alokranjan

RESEARCH INTERESTS

Nanoelectronic devices
536

Scholar Citations

14

Scholar h-index

17

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Raman scattering of phonon polaritons under nanoscale confinement: the role of structure and environment
    G Zograf, B Kucukoz, O Kotov, N Shetty, L Zeng, AB Yankovich, A Ranjan, ...
    arXiv preprint arXiv:2603.25895 , 2026
    2026
  • Probing Traps in Ta 2 O 5 /Al 2 O 3 Memristive Switching Devices
    A Ranjan, A Padovani, PL Torraca, J Pan, W Wang, W Song, M Bosman, ...
    ACS Applied Electronic Materials 8 (1), 195-204 , 2025
    2025
  • Correlating Synthesis, Structure, and Thermal Stability of CuBi Nanowires for Spintronic Applications by Electron Microscopy and in Situ Scattering Methods
    A Guedeja-Marrón, HL Andersen, G Sánchez-Santolino, L Zeng, ...
    ACS nano 19 (49), 41509-41527 , 2025
    2025
    Citations: 1
  • Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling
    B Hult, A Ranjan, L Zeng, E Olsson, N Rorsman, A Vorobiev
    IEEE Transactions on Device and Materials Reliability , 2025
    2025
    Citations: 2
  • Microscopic Analysis of Degradation and Breakdown Kinetics in HfO 2 Gate Dielectric after Ions Irradiation
    A Padovani, P La Torraca, FL Aguirre, A Ranjan, N Raghavan, KL Pey, ...
    ACS Applied Materials & Interfaces 17 (37), 52814-52825 , 2025
    2025
    Citations: 3
  • Ultrathin 3R-MoS 2 metasurfaces with atomically precise edges for efficient nonlinear nanophotonics
    G Zograf, B Küçüköz, AY Polyakov, AB Yankovich, A Ranjan, M Bancerek, ...
    Communications Physics 8 (1), 271 , 2025
    2025
    Citations: 23
  • Enabling Tailored In Situ Electron Microscopy Studies at Low Temperature
    A Ranjan, E Ljungberg, L Zeng, E Olsson
    Microscopy and Microanalysis 31 (Supplement_1), ozaf048. 1168 , 2025
    2025
  • Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb 2 O 3 )
    A Ranjan, L Zeng, E Olsson
    ACS Applied Electronic Materials 6 (11), 8540-8548 , 2024
    2024
    Citations: 9
  • Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
    A Ranjan, L Zeng, E Olsson
    Advanced Electronic Materials 10 (11), 2400205 , 2024
    2024
    Citations: 5
  • Guidelines for the design of random Telegraph Noise-based true random number generators
    T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ...
    IEEE Transactions on Device and Materials Reliability 24 (2), 184-193 , 2024
    2024
    Citations: 10
  • Estimating the number of defects in a single breakdown spot of a gate dielectric
    A Ranjan, A Padovani, B Dianat, N Raghavan, KL Pey, SJ O’Shea
    IEEE Electron Device Letters 45 (5), 809-812 , 2024
    2024
    Citations: 3
  • Heating effects in Bi-doped Cu nanowires for spintronics: Atomic resolution in-situ insights
    A Guedeja-Marron, M Saura-Muzquiz, I Garcia-Manuz, JI Beltran, ...
    BIO Web of Conferences 129, 22024 , 2024
    2024
  • Reliability Analysis of Random Telegraph Noisebased True Random Number Generators
    T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ...
    2023 IEEE International Integrated Reliability Workshop (IIRW), 1-6 , 2023
    2023
    Citations: 3
  • Adhesion microscopy as a nanoscale probe for oxidation and charge generation at metal-oxide interfaces
    A Ranjan, A Padovani, B Dianat, N Raghavan, KL Pey, SJ O’Shea
    ACS Applied Electronic Materials 5 (9), 5176-5186 , 2023
    2023
    Citations: 3
  • Convolution neural networks and position averaged convergent beam electron diffraction for determining the structure of 2D materials
    AB Yankovich, M Röding, VW Skärström, A Ranjan, E Olsson
    Microscopy and Microanalysis 29 (Supplement_1), 691-693 , 2023
    2023
    Citations: 1
  • Probing dielectric breakdown in single crystal hexagonal boron nitride
    A Ranjan, AB Yankovich, K Watanabe, T Taniguchi, E Olsson
    Microscopy and Microanalysis 29 (Supplement_1), 1998-2000 , 2023
    2023
    Citations: 2
  • Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
    A Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang, L Sun, J Chu, KL Pey
    Applied Materials Today 31, 101739 , 2023
    2023
    Citations: 20
  • Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdown
    A Ranjan, SJ O’Shea, A Padovani, T Su, P La Torraca, YS Ang, ...
    ACS Applied Electronic Materials 5 (2), 1262-1276 , 2023
    2023
    Citations: 23
  • Probing resistive switching in HfO< inf> 2</inf>/Al< inf> 2</inf> O< inf> 3</inf> bilayer oxides using in-situ
    A Ranjan, H Xu, C Wang
    Applied Materials Today 31, 101739 , 2023
    2023
  • Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process
    A Deogaonkar, M Seal, A Senapati, S Ginnaram, A Ranjan, S Maikap, ...
    Microelectronics Reliability 138, 114765 , 2022
    2022
    Citations: 3

MOST CITED SCHOLAR PUBLICATIONS

  • Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
    A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
    Scientific Reports 8 (1) , 2018
    2018
    Citations: 80
  • Dielectric breakdown in single-crystal hexagonal boron nitride
    A Ranjan, N Raghavan, M Holwill, K Watanabe, T Taniguchi, ...
    ACS Applied Electronic Materials 3 (8), 3547-3554 , 2021
    2021
    Citations: 77
  • Random telegraph noise in 2D hexagonal boron nitride dielectric films
    A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...
    Applied Physics Letters 112 (13) , 2018
    2018
    Citations: 35
  • Sb 2 Te 3 and Its Superlattices: Optimization by Statistical Design
    JK Behera, X Zhou, A Ranjan, RE Simpson
    ACS applied materials & interfaces 10 (17), 15040-15050 , 2018
    2018
    Citations: 31
  • Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics
    A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
    IEEE Electron Device Letters 40 (8), 1321-1324 , 2019
    2019
    Citations: 27
  • Ultrathin 3R-MoS 2 metasurfaces with atomically precise edges for efficient nonlinear nanophotonics
    G Zograf, B Küçüköz, AY Polyakov, AB Yankovich, A Ranjan, M Bancerek, ...
    Communications Physics 8 (1), 271 , 2025
    2025
    Citations: 23
  • Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdown
    A Ranjan, SJ O’Shea, A Padovani, T Su, P La Torraca, YS Ang, ...
    ACS Applied Electronic Materials 5 (2), 1262-1276 , 2023
    2023
    Citations: 23
  • Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
    A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
    Microelectronics Reliability 64, 172-178 , 2016
    2016
    Citations: 23
  • Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
    A Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang, L Sun, J Chu, KL Pey
    Applied Materials Today 31, 101739 , 2023
    2023
    Citations: 20
  • Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight
    K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
    Microelectronics Reliability 64, 204-209 , 2016
    2016
    Citations: 20
  • CAFM based Spectroscopy of Stress-Induced Defects in HfO2 with Experimental Evidence of the Clustering Model and Metastable Vacancy Defect State
    AR Nagarajan Raghavan, Shubhakar Kalya, Ramesh Thamankar, Joel Molina, Sean ...
    2016 IEEE International Reliability Physics Symposium (IRPS) , 2016
    2016
    Citations: 19
  • Localized probing of dielectric breakdown in multilayer hexagonal boron nitride
    A Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL Pey
    ACS applied materials & interfaces 12 (49), 55000-55010 , 2020
    2020
    Citations: 18
  • Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
    R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ...
    Journal of Applied Physics 122 (2) , 2017
    2017
    Citations: 16
  • Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
    J Molina, R Torres, A Ranjan, KL Pey
    Materials Science in Semiconductor Processing 66, 191-199 , 2017
    2017
    Citations: 14
  • Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics
    A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
    2018 IEEE International Reliability Physics Symposium (IRPS) , 2018
    2018
    Citations: 13
  • Guidelines for the design of random Telegraph Noise-based true random number generators
    T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ...
    IEEE Transactions on Device and Materials Reliability 24 (2), 184-193 , 2024
    2024
    Citations: 10
  • The interplay between drift and electrical measurement in conduction atomic force microscopy
    A Ranjan, KL Pey, SJ O'Shea
    Review of Scientific Instruments 90 (7), 073701 , 2019
    2019
    Citations: 10
  • Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb 2 O 3 )
    A Ranjan, L Zeng, E Olsson
    ACS Applied Electronic Materials 6 (11), 8540-8548 , 2024
    2024
    Citations: 9
  • Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO 2 Using Defect Nanospectroscopy
    A Ranjan, FM Puglisi, J Molina-Reyes, P Pavan, SJ O’Shea, N Raghavan, ...
    ACS Applied Electronic Materials 4 (8), 3909-3921 , 2022
    2022
    Citations: 9
  • An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
    K Shubhakar, M Bosman, OA Neucheva, YC Loke, N Raghavan, ...
    Microelectronics Reliability 55 (9-10), 1450-1455 , 2015
    2015
    Citations: 9