Alok Ranjan

@chalmers.se/en/Pages

Postdoctoral Researcher, Department of Physics
Chalmers University of Technology



              

https://researchid.co/alokranjan

RESEARCH INTERESTS

Nanoelectronic devices

376

Scholar Citations

12

Scholar h-index

14

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb2O3)
    A Ranjan, L Zeng, E Olsson
    ACS Applied Electronic Materials 2024

  • Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
    A Ranjan, L Zeng, E Olsson
    Advanced Electronic Materials 10 (11), 2400205 2024

  • Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
    T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ...
    IEEE Transactions on Device and Materials Reliability 2024

  • Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
    A Ranjan, A Padovani, B Dianat, N Raghavan, KL Pey, SJ O’Shea
    IEEE Electron Device Letters 2024

  • Heating effects in Bi-doped Cu nanowires for spintronics: Atomic resolution in-situ insights
    A Guedeja-Marron, M Saura-Muzquiz, I Garcia-Manuz, JI Beltran, ...
    BIO Web of Conferences 129, 22024 2024

  • Reliability Analysis of Random Telegraph Noisebased True Random Number Generators
    T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ...
    2023 IEEE International Integrated Reliability Workshop (IIRW), 1-6 2023

  • Adhesion microscopy as a nanoscale probe for oxidation and charge generation at metal-oxide interfaces
    A Ranjan, A Padovani, B Dianat, N Raghavan, KL Pey, SJ O’Shea
    ACS Applied Electronic Materials 5 (9), 5176-5186 2023

  • Convolution Neural Networks and Position Averaged Convergent Beam Electron Diffraction for Determining the Structure of 2D Materials
    AB Yankovich, M Rding, VW Skrstrm, A Ranjan, E Olsson
    Microscopy and Microanalysis 29 (Supplement_1), 691-693 2023

  • Probing dielectric breakdown in single crystal hexagonal boron nitride
    A Ranjan, AB Yankovich, K Watanabe, T Taniguchi, E Olsson
    Microscopy and Microanalysis 29 (Supplement_1), 1998-2000 2023

  • Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
    A Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang, L Sun, J Chu, KL Pey
    Applied Materials Today 31, 101739 2023

  • Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdown
    A Ranjan, SJ O’Shea, A Padovani, T Su, P La Torraca, YS Ang, ...
    ACS Applied Electronic Materials 5 (2), 1262-1276 2023

  • Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process
    A Deogaonkar, M Seal, A Senapati, S Ginnaram, A Ranjan, S Maikap, ...
    Microelectronics Reliability 138, 114765 2022

  • Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy
    A Ranjan, FM Puglisi, J Molina-Reyes, P Pavan, SJ O’Shea, N Raghavan, ...
    ACS Applied Electronic Materials 4 (8), 3909-3921 2022

  • Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
    FL Aguirre, A Ranjan, N Raghavan, A Padovani, SM Pazos, N Vega, ...
    Applied Physics Express 14 (12), 121001 2021

  • Dielectric breakdown in single-crystal hexagonal boron nitride
    A Ranjan, N Raghavan, M Holwill, K Watanabe, T Taniguchi, ...
    ACS Applied Electronic Materials 3 (8), 3547-3554 2021

  • Localized probing of dielectric breakdown in multilayer hexagonal boron nitride
    A Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL Pey
    ACS Applied Materials & Interfaces 12 (49), 55000-55010 2020

  • Correlation of dielectric breakdown and nanoscale adhesion in silicon dioxide thin films
    A Ranjan, SJ O’Shea, M Bosman, J Molina, N Raghavan, KL Pey
    2020 IEEE International Reliability Physics Symposium (IRPS), 1-7 2020

  • Random Telegraph Noise Nano-Spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques
    A Ranjan, N Raghavan, K Shubhakar, SJ O’Shea, KL Pey
    Noise in Nanoscale Semiconductor Devices, 417-440 2020

  • The interplay between drift and electrical measurement in conduction atomic force microscopy
    A Ranjan, KL Pey, SJ O'Shea
    Review of Scientific Instruments 90 (7), 073701 2019

  • Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics
    A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
    IEEE Electron Device Letters 40 (8), 1321-1324 2019

MOST CITED SCHOLAR PUBLICATIONS

  • Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
    A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
    Scientific Reports 8 (1) 2018
    Citations: 69

  • Dielectric breakdown in single-crystal hexagonal boron nitride
    A Ranjan, N Raghavan, M Holwill, K Watanabe, T Taniguchi, ...
    ACS Applied Electronic Materials 3 (8), 3547-3554 2021
    Citations: 47

  • Random telegraph noise in 2D hexagonal boron nitride dielectric films
    A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...
    Applied Physics Letters 112 (13) 2018
    Citations: 31

  • Sb2Te3 and Its Superlattices: Optimization by Statistical Design
    JK Behera, X Zhou, A Ranjan, RE Simpson
    ACS applied materials & interfaces 10 (17), 15040-15050 2018
    Citations: 24

  • Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
    A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
    Microelectronics Reliability 64, 172-178 2016
    Citations: 24

  • Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics
    A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
    IEEE Electron Device Letters 40 (8), 1321-1324 2019
    Citations: 22

  • CAFM based Spectroscopy of Stress-Induced Defects in HfO2 with Experimental Evidence of the Clustering Model and Metastable Vacancy Defect State
    AR Nagarajan Raghavan, Shubhakar Kalya, Ramesh Thamankar, Joel Molina, Sean ...
    2016 IEEE International Reliability Physics Symposium (IRPS) 2016
    Citations: 18

  • Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight
    K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
    Microelectronics Reliability 64, 204-209 2016
    Citations: 15

  • Localized probing of dielectric breakdown in multilayer hexagonal boron nitride
    A Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL Pey
    ACS Applied Materials & Interfaces 12 (49), 55000-55010 2020
    Citations: 14

  • Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
    J Molina, R Torres, A Ranjan, KL Pey
    Materials Science in Semiconductor Processing 66, 191-199 2017
    Citations: 14

  • Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdown
    A Ranjan, SJ O’Shea, A Padovani, T Su, P La Torraca, YS Ang, ...
    ACS Applied Electronic Materials 5 (2), 1262-1276 2023
    Citations: 13

  • Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics
    A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
    2018 IEEE International Reliability Physics Symposium (IRPS) 2018
    Citations: 12

  • Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
    R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ...
    Journal of Applied Physics 122 (2) 2017
    Citations: 12

  • The interplay between drift and electrical measurement in conduction atomic force microscopy
    A Ranjan, KL Pey, SJ O'Shea
    Review of Scientific Instruments 90 (7), 073701 2019
    Citations: 10

  • Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
    A Ranjan, H Xu, C Wang, J Molina, X Wu, H Zhang, L Sun, J Chu, KL Pey
    Applied Materials Today 31, 101739 2023
    Citations: 9

  • Random Telegraph Noise Nano-Spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques
    A Ranjan, N Raghavan, K Shubhakar, SJ O’Shea, KL Pey
    Noise in Nanoscale Semiconductor Devices, 417-440 2020
    Citations: 6

  • An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
    K Shubhakar, M Bosman, OA Neucheva, YC Loke, N Raghavan, ...
    Microelectronics Reliability 55 (9-10), 1450-1455 2015
    Citations: 6

  • Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy
    A Ranjan, FM Puglisi, J Molina-Reyes, P Pavan, SJ O’Shea, N Raghavan, ...
    ACS Applied Electronic Materials 4 (8), 3909-3921 2022
    Citations: 5

  • Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
    T Zanotti, A Ranjan, SJ O’Shea, N Raghavan, R Thamankar, KL Pey, ...
    IEEE Transactions on Device and Materials Reliability 2024
    Citations: 4

  • Correlation of dielectric breakdown and nanoscale adhesion in silicon dioxide thin films
    A Ranjan, SJ O’Shea, M Bosman, J Molina, N Raghavan, KL Pey
    2020 IEEE International Reliability Physics Symposium (IRPS), 1-7 2020
    Citations: 3