Kashinath Arjun Bogle
@srtmun.ac.in
Assistant Professor, School of Physical Sciences
Swami Ramanand Teerth Marathwada University, Nanded
EDUCATION
M.Sc., M. Phil., Ph.D.
RESEARCH INTERESTS
Thin films, heterostructures, Devices (Photosensor, gas sensor), and Wastewater treatment
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Asma B.U. Rahman, Sumayya Begum, Nabeel M.S. Kaawash, Mohammed Y.H. Thabit, Devidas I. Halge, Pooja M. Khanzode, Sohel J. Shaikh, Vijaykiran N. Narwade, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Pranav M. Jambhale, Vijaykiran N. Narwade, Mohammed Shariq, Kashinath A. Bogle, and Mahendra D. Shirsat
AIP Publishing
Vikas N. Kendre, Vijaykiran N. Narwade, Mohammad Shariq, Kashinath A. Bogle, and Mahendra D. Shirsat
AIP Publishing
Prashant K. Kasare, Vijaykiran N. Narwade, Mohammed Shariq, Kashinath A. Bogle, and Mahendra D. Shirsat
AIP Publishing
Sameerah S S Al-Qadasy, Hakim Q N M Al-Arique, Nabeel M S Kaawash, S Q Chishty, and Kashinath A Bogle
IOP Publishing
Abstract This study investigates the influence of boron doping from boric acid (H3BO3) on the structural, morphological, and optical properties of ZnO thin films deposited on glass substrates via spray pyrolysis at a deposition temperature of 250 °C. Subsequently, they undergo annealing in air at varying temperatures (200, 300, and 400 °C) for 45 min. The research reveals a significant dependence of all investigated properties on both annealing temperature and boron doping. Both pristine ZnO and boron-doped ZnO (BZO) films exhibit a polycrystalline hexagonal wurtzite structure. At the highest annealing temperature (400 °C), both films demonstrate high optical transmittance exceeding 70%, with crystallite diameters ranging from 25.8 to 28.5 nm for ZnO and 15.96 to 24.80 nm for BZO. Additionally, both films exhibit pronounced absorbance up to 400 nm. Scanning electron microscopy (SEM) analysis confirms a uniformly thick film surface. As the annealing temperature increases, the crystallite size grows, particle morphology evolves, and the overall film thickness increases. Fourier transform infrared (FTIR) spectroscopy validates the successful incorporation of boron atoms into the ZnO lattice structure. No contaminant peaks are observed in the FTIR spectra, indicating film purity. Furthermore, the study finds that BZO films possess a narrower optical band gap compared to pristine ZnO films. The band gap of the as-deposited and annealed BZO films is measured to be 3.04 eV and 2.9 eV, respectively, which is lower than the 3.23 eV band gap observed for the ZnO film. In general, the band gap exhibits a decreasing trend with increasing annealing temperature.
Pranav M. Jambhale, Vijaykiran N. Narwade, Mohammed Shariq, Kashinath A. Bogle, and Mahendra D. Shirsat
Springer Science and Business Media LLC
Hakim Q.N.M. AL-Arique, Sameerah S.S. AL-Qadasy, Nabeel M.S. Kaawash, S.Q. Chishty, and Kashinath A. Bogle
Elsevier BV
Nabeel M. S. Kaawash, Devidas I. Halge, Vijaykiran N. Narwade, Mohammed Y. H. Thabit, Pooja M. Khanzode, Jagdish W. Dadge, Prashant S. Alegaonkar, and Kashinath A. Bogle
Wiley
This study demonstrates the development of an ultraviolet (UV)‐C photodetector (PD) fabricated using a surface‐passivated SnO2 thin film deposited via spray pyrolysis. This PD possesses an unprecedentedly fast response speed, with both rise time and decay time of 0.3 ms. Furthermore, even when subjected to a modest UV light intensity of 6 μW cm−2, the device shows a significantly high responsivity of 1500 A W−1, external quantum efficiency of 7 × 105%, and detectivity of 1013 Jones. When compared to previously reported SnO2‐based PDs, this device exhibits consistent performance over a long working time, which may be due to the suppression of surface vacancy defects via surface passivation, as observed from structural and optical measurements. This type of PDs has the potential to be useful in wide range of applications, including industrial sensing, medical diagnostics, and environmental monitoring.
Devidas Halge, Vijaykiran Narwade, Pooja Khanzode, Nabeel Kaawash, Prashant Alegaonkar, Janez Kovac, and Kashinath Bogle
Wiley
A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M.S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, and Kashinath A. Bogle
Elsevier BV
Kishori Naik, Vikas Kutte, Madhuri Lakhane, Kashinath Bogle, and Megha Mahabole
Springer Science and Business Media LLC
Vijaykiran N. Narwade, Ganesh K. Rahane, Kashinath A. Bogle, Meng-Lin Tsai, Sachin R. Rondiya, and Mahendra D. Shirsat
Springer Science and Business Media LLC
Mohammed Y.H. Thabit, Nabeel M.S. Kaawash, Devidas I. Halge, Pooja M. Khanzode, Vijaykiran N. Narwade, Shailendra S. Dahiwale, and Kashinath A. Bogle
Elsevier BV
Kamlesh B. Deore, Vijaykiran N. Narwade, Shubham S. Patil, Sachin R. Rondiya, Kashinath A. Bogle, Meng-Lin Tsai, Tibor Hianik, and Mahendra D. Shirsat
Elsevier BV
Rajender Reddy Banda, Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M.S. Kaawash, Mohammed Y.H. Thabit, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Nabeel M.S. Kaawash, Devidas I. Halge, Vijaykiran N. Narwade, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Malikarjun D. Wakade, Kishori B.Naik, Vikas D. Kutte, Vijaykiran N. Narwade, Madhuri A. Lakhane, Kashinath A. Bogle, Rajendra S. Khairnar, and Megha P. Mahabole
Elsevier BV
Pooja M. Khanzode, Devidas I. Halge, Nabeel M. S. Kaawash, Mohammed Y. H. Thabit, Vijaykiran N. Narwade, Jagdish W. Dadge, Shailendra S. Dahiwale, and Kashinath A. Bogle
Elsevier BV
Devidas I. Halge, Pooja M. Khanzode, Nabeel M.S. Kaawash, Mohammed Y.H. Thabit, Vijaykiran N. Narwade, Shailendra S. Dahiwale, and Kashinath A. Bogle
Elsevier BV
Mohammed Y.H. Thabit, Nabeel M.S. Kaawash, Devidas I. Halge, Pooja M. Khanzode, Vijaykiran N. Narwade, Jagdish W. Dadge, Shailendra S. Dahiwale, and Kashinath A. Bogle
Elsevier BV
Asma B. U. Rahman, Sumayya Begum, Nabeel M. S. Kaawash, Mohammed Y. H. Thabit, Devidas I. Halge, Pooja M. Khanzode, Vijaykiran N. Narwade, and Kashinath A. Bogle
Elsevier BV
Nabeel M.S. Kaawash, Mohammed Y.H. Thabit, Devidas I. Halge, Vijaykiran N. Narwade, and Kashinath A. Bogle
Elsevier BV
N. M. S. Kaawash, D I Halge, V N Narwade, J W Dadge, and K A Bogle
IOP Publishing
Abstract A UV photodetector was created using a spray-deposited α-Fe2O3 thin film on a glass substrate at 160 °C. The film’s thickness was approximately 110 nm. With a near UV light at a wavelength of 340 nm and an intensity of 140 µW/cm2, the photosensitivity of an individual α-Fe2O3 thin film photodetector was greater than 40%. An individual α-Fe2O3 thin film-based photodetector’s rapid photoresponse time of 1.6 ms and responsivity of ~ 1 mA/W can be attributed to the band gap and chemisorption of oxygen on the film’s surface. The photodetectors’ simple, low-cost, and large-scale fabrication demonstrates the fabrication of a stable, reversible, and rapid photo-responsive photodetector for near UV wavelength.
Mohammed Y. H. Thabit, Nabeel M. S. Kaawash, Sumayya Begum, Devidas I. Halge, Vijaykiran N. Narwade, Prashant S. Alegaonkar, and Kashinath A. Bogle
IOP Publishing
Abstract This work demonstrates the development of a highly sensitive and fast infrared photodetector using a PbS thin film deposited using a simple and scalable method known as “spray pyrolysis”. An aqueous precursor solution was deposited on a glass substrate at 150 °C have a cubic phase of PbS. Silver electrodes with a 1 mm gap are drawn on the film to create photo-detector devices. Low resistive contact between the silver electrode and the PbS film is revealed from the linear I-V measurements performed in the dark and under light illumination. Under the illumination of a 100-watt tungsten lamp, the photo-responsivity, sensitivity, response time, and decay time of the PbS film were measured. The Ag/PbS/Ag photodetector device has a responsivity of 70 mA/W, a sensitivity of 200 at 30 V, and the best response and decay times of 6.4 and 15.6 ms, respectively. The photodetector device produced by this simple and low-cost fabrication method has a fast response and decay time.
R Reddy B, D I Halge, V N Narwade, J W Dadge, and K A Bogle
IOP Publishing
Abstract Polycrystalline BiFeO3 thin films have been grown on glass substrates using a simple but efficient method commonly known as the spin coating technique. When used in a Cu / BiFeO3 / Cu configuration, the annealed BiFeO3 film (at 350 °C) exhibits bipolar resistive switching behaviour. The device shows stable resistive switching behaviour, where a stable hysteresis in the current–voltage curve was well developed by applying +/- 10 V at room temperature. The ratio of resistance in the high resistance state to the low resistance state of the device is ~ 104 with a good retention time of more than 106 min. The Poole–Frenkel emission at the Cu / BiFeO3 interface is proposed, and a redistribution of oxygen vacancies along the grain boundaries is found to play a key role in the resistance switching in the polycrystalline pure BiFeO3 films.