STUDIES OF IMPLANTATION OF O+ IONS INTO SiO2(001) FILMS AT THE SMALL-ANGLE ION BOMBARDMENT Uchkun Kutliev, Atabek S. Ashirov, Gulmira X. Allayarova, Aziza Yu. Saidova East European Journal of Physics, 2025 We have studied the process of ion implantation at small-angle ion bombardment of SiO2 (001) film at low values of initial energy (up to 5 keV). Along with scattered O+ ions, ion implantation is observed. It has shown that the geometric parameters of the surface semichannel affect the bombardment angle, which initiates the implantation process. It was found that in the case of a shallow semichannel, the implantation process is observed more than a deep semichannel at one value of the angle of incidence of ions. The dependence of implanted ions on the angle of their bombardment is obtained. It is found that few bombarding ions were implanted into the deep surface semichannel. This is explained by the influence of the second atomic row of the semichannel. The results obtained are of great interest in studying the ion implantation process.
Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO2(001)<110> at Glancing Incidence Atabek S. Ashirov, Mukhtorjon K. Karimov, Uchkun O. Kutliev, Gulmira X. Allayarova International Conference of Young Specialists on Micro Nanotechnologies and Electron Devices Edm, 2024 Simulated using the binary method collision approximation trajectories of scattered ions $\mathrm{Ne}^{+}, \mathrm{Ar}^{+}, \mathrm{Xe}^{+}$from the surface atomic rows of SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>(001)<110> at angles of incidence $\psi=5^{0}$ and $9^{0}$, with an initial energy of 5 keV are presented in this article. It has been established that with an increase in the masses of bombarding ions, the number of trajectories of scattered ions from surface atomic rows increases and the number of trajectories of scattered ions from the surface atomic row increases. The influence of which atom of the chain influences the scattering process more than other atoms is determined. It is shown that during multiple scattering of ions there is a pair of more severe collisions, which determine the further direction of the scattered ion. The distances where the interaction of an ion with a surface atom ends are calculated, i.e. the end point of the trajectory for all ions bombarding surfaces. We also studied the dependence of the polar scattering angle on the aiming point of bombarding ions $\mathrm{Ne}^{+}, \mathrm{Ar}^{+}, \mathrm{Xe}^{+}$from the surface atomic rows of SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>(001)<110> at incidence angles $\psi=5^{0}$ and $9^{0}$, with an initial energy of 5 keV. It has been established that when bombarded by ions at grazing angles, mainly specular scattering of ions from surface atomic rows is observed. The polar angle of the first trajectory has a large value, and the last trajectory has the smallest value.
Mathematical Modeling of the Process Scattering Ions from Atomic Chain of the Al2O3(001)<110> Surface Atabek S. Ashirov, Uchkun O. Kutliev, Mukhtorjon K. Karimov, Feruzbek Kenja o‘g’li Masharipov, Mekhroj Uchkun o‘g’li Otabaev Proceedings of the 2023 IEEE 16th International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering Apeie 2023, 2023 The first results of studying the trajectory of scattered particles from the Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>(001)< 110> surface using the weak collision approximation (BCA) method are presented in this paper. It is shown that the method BCA is changeable at small angles of incidence and at low energies. There are given information about calculation of the ion trajectory in open parallel half-channels formed on the faces (110) and (100) of a cubic face-centered single crystal. In order to consider all possible ion trajectories associated with the initial aiming points, we select an elementary square area on the face (100) with sides parallel to the axis (110) and perpendicular to it. For study trajectory scattered ions was chosen some aiming points on the atomic row of the surface. With an increase in the aiming point, deviations of the trajectory from the initial position are observed. Theoretically, it is possible to calculate the value of the aiming point, which is observed by the scattering of particles from the atomic row of the surface. We also calculated the coefficient of collision of scattered ions from the atomic row of the surface Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>(001)<110>.
Low Energy Ar+ Ions Scattering from SiO2 (001)<Ῑ10> Surface under Grazing Incidence Atabek S. Ashirov, Uchkun O. Kutliev, Soyibjon Xakimov, Shavkat K. Ismailov Materials Science Forum, 2022 This article presents the results of computer modeling of small-angle scattering of Ar+ ions from the surface of the SiO2 thin film under bombardment by low-energy. The study of the trajectory of the scattered ions showed that the trajectories with two focuses are observed not only near the center of the semichannel but also nearby the surface of the atomic chain. An increase in the value of the initial energy of incident particles leads to a narrowing of the trajectory of the scattered ions, which leads to the appearance of low-intensity peaks in the energy spectrum of the scattered ions.
Inelastic energy loss of ar ions scattered al2o3 surface under grazing incidence A.S. Ashirov, M.K. Qurbanov, I.U. Tangribergenov, M.K. Karimov, K.U. Otabaeva Physics and Chemistry of Solid State, 2021 In this paper presents the investigation of the surface Al2O3 by ion scattering spectroscopy. The trajectory of small angle scattered ions calculated by the method of binary collision approximation. It was found dependence of inelastic energy loss and trajectories of scattered ions. The value of inelastic energy loss scattered ions almost depend to the angle of incidence and the geometrical parameters of surface semichannels.
RECENT SCHOLAR PUBLICATIONS
Numerical analysis of femtosecond second-harmonic generation in periodically poled GaN crystals OI Sabirov, AS Ashirov, UK Sapaev Journal of Russian Laser Research, 1-10 , 2026 2026
STUDIES OF IMPLANTATION OF O+ IONS INTO SiO2(001) FILMS AT THE SMALL-ANGLE ION BOMBARDMENT UO Kutliev, AS Ashirov, GX Allayarova, A Saidova EAST EUROPEAN JOURNAL OF PHYSICS 2, 320-323 , 2025 2025
Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO2(001)<110> at Glancing Incidence AS Ashirov, UO Kutliev, MK Karimov, GX Allayarova 2024 IEEE 25th INTERNATIONAL CONFERENCE OF YOUNG PROFESSIONALS IN ELECTRON … , 2024 2024
Mathematical Modeling of the Process Scattering Ions from Atomic Chain of the Al 2 O 3 (001)<110> Surface AS Ashirov, UO Kutliev, MK Karimov 2023 IEEE XVI International Scientific and Technical Conference Actual … , 2023 2023 Citations: 1
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ОСОБЕННЫЕ ТРАЕКТОРИИ РАССЕЯННЫХ ИОНОВ С ПОВЕРХНОСТИ SiO2 (001) AС Aширов, УО Кутлиев, МУ Отабаев, ХЖ Матчонов, ФЖ Матчанова, ... Республика илмий-амалий анжумани, 267-269 , 2022 2022
МАЛОУГЛОВОЕ РАССЕЯНИЕ ИОНОВ Nе+ С ПОВЕРХНОСТИ ТОНКОЙ ПЛЁНКИ SiO2(001)<ī10> А АШИРОВ, Ф БОБОЕВ, Ш АСКАРОВА, Х КАРИМОВ, Я ЖАББАРОВА, ... ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ, 124-126 , 2022 2022
Inelastic energy loss of Ar ions scattered Al2O3 surface under grazing incidence AS Ashirov, MK Qurbanov, IU Tangribergenov, MK Karimov, KU Otabaeva Physics and Chemistry of Solid State 22 (2), 255-259 , 2021 2021 Citations: 2
INVESTIGATION BY THE METHOD OF LOW ENERGY ION SCATTERING THIN FILM SiO2(001)<Ῑ10> SURFACE YJJ A.S. Ashirov, M.K. Karimov, S. Xakimov Semiconductor physics and microelectronics 3 (5) , 2021 2021
Investigation of defect InP (001) surface by the method of low energy ion scattering M Karimov, U Kutliev, M Otaboev «Узбекский физический журнал» 21 (6), 356-361 , 2019 2019
Программа для расчета геометрических размеров прямозубой зубчатой передачи ИЮ Давлетов, АС Аширов, ОИ Сабиров, НШ Матякубов, АИ Жапаков 2018
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MOST CITED SCHOLAR PUBLICATIONS
Low Energy Ar + Ions Scattering from SiO 2 (001)<Ῑ10> Surface under Grazing Incidence AS Ashirov, UO Kutliev, S Xakimov, SK Ismailov Materials Science Forum 1049, 152-157 , 2022 2022 Citations: 3
Inelastic energy loss of Ar ions scattered Al2O3 surface under grazing incidence AS Ashirov, MK Qurbanov, IU Tangribergenov, MK Karimov, KU Otabaeva Physics and Chemistry of Solid State 22 (2), 255-259 , 2021 2021 Citations: 2
Mathematical Modeling of the Process Scattering Ions from Atomic Chain of the Al 2 O 3 (001)<110> Surface AS Ashirov, UO Kutliev, MK Karimov 2023 IEEE XVI International Scientific and Technical Conference Actual … , 2023 2023 Citations: 1
Numerical analysis of femtosecond second-harmonic generation in periodically poled GaN crystals OI Sabirov, AS Ashirov, UK Sapaev Journal of Russian Laser Research, 1-10 , 2026 2026
STUDIES OF IMPLANTATION OF O+ IONS INTO SiO2(001) FILMS AT THE SMALL-ANGLE ION BOMBARDMENT UO Kutliev, AS Ashirov, GX Allayarova, A Saidova EAST EUROPEAN JOURNAL OF PHYSICS 2, 320-323 , 2025 2025
Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO2(001)<110> at Glancing Incidence AS Ashirov, UO Kutliev, MK Karimov, GX Allayarova 2024 IEEE 25th INTERNATIONAL CONFERENCE OF YOUNG PROFESSIONALS IN ELECTRON … , 2024 2024
ОСОБЕННЫЕ ТРАЕКТОРИИ РАССЕЯННЫХ ИОНОВ С ПОВЕРХНОСТИ SiO2 (001) AС Aширов, УО Кутлиев, МУ Отабаев, ХЖ Матчонов, ФЖ Матчанова, ... Республика илмий-амалий анжумани, 267-269 , 2022 2022
МАЛОУГЛОВОЕ РАССЕЯНИЕ ИОНОВ Nе+ С ПОВЕРХНОСТИ ТОНКОЙ ПЛЁНКИ SiO2(001)<ī10> А АШИРОВ, Ф БОБОЕВ, Ш АСКАРОВА, Х КАРИМОВ, Я ЖАББАРОВА, ... ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ, 124-126 , 2022 2022
INVESTIGATION BY THE METHOD OF LOW ENERGY ION SCATTERING THIN FILM SiO2(001)<Ῑ10> SURFACE YJJ A.S. Ashirov, M.K. Karimov, S. Xakimov Semiconductor physics and microelectronics 3 (5) , 2021 2021
Investigation of defect InP (001) surface by the method of low energy ion scattering M Karimov, U Kutliev, M Otaboev «Узбекский физический журнал» 21 (6), 356-361 , 2019 2019
Программа для расчета геометрических размеров прямозубой зубчатой передачи ИЮ Давлетов, АС Аширов, ОИ Сабиров, НШ Матякубов, АИ Жапаков 2018
Energy And Angular Distributions Scattered Ne+ Ions From The Gap(100) Surface UO Kutliev, HS Matyakubov, XE Abdukarimov, HBO Qurbonbayev Journal of Multidisciplinary Engineering Science and Technology (JMEST) 2 … , 2015 2015
