Kurivella manikanta

@mlritm.ac.in

Assistant Professor and ECE
MLRITM



                 

https://researchid.co/manikanta.kurivella123

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, Electrical and Electronic Engineering

11

Scopus Publications

Scopus Publications

  • Spacer Engineered Halo-Doped Nanowire MOSFET for Digital Applications
    P. Kiran Kumar, B. Balaji, Ch. Sree Vardhan, Y. Gowthami, Vipul Agarwal, M. Shashidhar, Kallepelli Sagar, Biswajit Jena, Michael Cholines Pedapudi, and Kurivella Manikanta
    Springer Science and Business Media LLC

  • Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector
    K. Manikanta and Umakanta Nanda
    Springer Science and Business Media LLC


  • Impact of Dielectric Materials in an Asymmetrical Shaped Band to Band TFET
    Manikanta Kurivella, Umakanta Nanda, Sreeram Mounika, and Chandan Kumar Pandey
    IEEE
    In this manuscript, the band-to-band tunnel field effect transistor TFET has an asymmetrical structure and is named a T-shaped channel TFET. The TFET drain current and transconductance parameters are analyzed at different dielectric materials and doping concentrations. Here observed that the ON current of the TEFT is high for HfO2 gate dielectric compared to other materials. Also, the switching ratio of the TFET is higher than other material combinations. All these analyses are carried out in the TCAD-Sentaurus software. Due to double gate TFET, the device is better immune to the short channel variations. Because the device drives controllability more towards the gates. The doping concentration of the TFET also changes the drain current of the device.

  • TFET Based Biosensor Using Dielectric Modulation Technique
    Manikanta Kurivella, Umakanta Nanda, and Chandan Kumar Pandey
    IEEE
    In this era of fast-growing low-power semiconductor technology, there is a need for a best-in-the-market health monitoring system using transistor-based devices. Different semi-conductor technologies are used in our health monitoring system. However, this paper is concentrating on the Bio-FETs. Using Bio-FETs, detecting biomolecules is very effortless and has superior detection capability, less power, less cost, and label-less detection. When compared to MOSFETs, the properties of the TFET-based Bio-FETs have made them more sustainable as MOSFETs have some major issues like short channel effects (SCEs) and leakage current caused by the thermionic emission of electrons. A theoretical restriction on the subthreshold slope (SS greater than 60 mv/Dec) of the FET limits device performance in terms of sensitivity and increases power consumption. To overcome these effects, TFET is becoming the workhorse in manufacturing transistor-based biosensors. This paper demonstrates the TFET-based biosensor by using dielectric modulating technique including various structures, and the underlying mechanisms covering interpretative and quasi-experimental research parameters anal-ysis such as sensitivity parameters and distinct factors influencing the sensitivity parameter.

  • Linearity and RF analysis of double gate reverse T-shaped TFET with L-shaped pocket across the Si-Ge source region
    K Manikanta and Umakanta Nanda
    IOP Publishing
    Abstract In this work, a comprehensive investigation of the twin gate or double gate reverse T-shaped channel TFET (RT-DG-TFET) along with the heavily doped pocket at the source-channel interface is portrayed. Here the pockets have been placed in various places on the device like vertical and horizontal pockets across the source and the channel region, a pocket at the center of the source, a pocket near to tunneling junction, and an L-shaped pocket across the source-channel interface. All these structures are investigated and the pocket is doped with P-type impurities. Linearity and RF analysis are investigated using the Synopsis TCAD Sentaurus tools and compared among all these structures. The L-shaped pocket shows better results compared to others.

  • A High Gain and High CMRR Chopper Amplifier Using Current Splitting OTA for Biomedical Applications
    Bhaskara Rao Kasipogula, Gurumurthy Komanapalli, and Manikata Kurivella
    IEEE
    This paper proposes a capacitively-coupled current splitting OTA designed specifically for biomedical recording applications, focusing on achieving power efficiency, low noise, and high swing. The utilization of contemporary current splitting and current scaling techniques in the current mirror has resulted in a highly favorable balance between power consumption and noise levels. The design being discussed is characterized by its simplicity since it does not have a cascode transistor. Despite this simplicity, it can achieve an open-loop gain of over 60 dB without incurring any additional power consumption. Consequently, the suggested configuration exhibits a superior power efficiency factor (PEF) and an enhanced output swing. To mitigate flicker noise and optimize the balance between power consumption and noise performance, PMOS transistors operating in the sub-threshold region have been employed, utilizing an optimal size. The amplifier has been built and simulated using the Cadence Virtuoso tool with 0.18 µm CMOS technology. Corner simulations have been conducted to analyze the effects of process variations and mismatch. The amplifier under consideration has a gain and CMRR of 57.06 dB, and 161.7 dB, within its specified frequency range of 0.5 Hz to 10 kHz respectively. The total input-referred noise (IRN) is 14.45 ${\\bf{\\mu Vrms}}$ within the frequency range of 1 Hz to 10 kHz. The amplifier's power consumption is measured to be 6.17 ${\\bf{\\mu W}}$ when operating with a supply voltage of $ \\pm \\;0.8\\;{\\bf{V}}$. The proposed technique is suitable for a variety of biomedical applications due to its high gain and high CMRR.

  • Interface Trap Charges Impact on Ambipolarity of the Reverse T-Shaped Channel TFET
    Manikanta Kurivella and Umakanta Nanda
    IEEE
    The manuscript introduces a novel device called the “Reverse T-shaped channel Double Gate TFET.” Here the effect of interface trap charges (ITCs) on the ambipolarity of the device is investigated. The traps are introduced at the oxide/silicon interface. Both positive (donor)(ITCs) and negative (acceptor) (ITCs) trap charges are introduced and the ambipolarity was investigated for all types of charges. In addition to the ambipolarity the device transfer characteristics, transconductance, electric field, and threshold voltage of the proposed TFET are also examined using Synopsis TCAD-Sentaurus tools. The positive traps decrease the ambipolarity compared to the negative traps. After investigating the different parameters, it is observed that the device is immune to different types of trap charges and also it is more reliable for low-power applications.

  • Design and Performance Assessment of Dielectrically Modulated Reverse T-Shaped TFET Biosensor
    Manikanta Kurivella, Umakanta Nanda, and Bhaskara Rao Kasipogula
    IEEE
    The manuscript introduces a novel biosensor called the “Reverse T-shaped channel Double Gate TFET.” This innovative biosensor incorporates a dual cavity design to detect both charged and neutral biomolecules effectively. To enhance the sensing capabilities of the device, dual cavities are strategically positioned near both gate metals. In this document, we evaluate the biosensor's sensitivity to four different biomolecules, each characterized by distinct dielectric constants. The biomolecules under consideration and their respective dielectric constants are Uricase (k=1.54), Streptavidin (k=2.1), Protein (k=2.50), ChOx (k=3.30), and APTES (k=3.57). Additionally, we thoroughly investigate the biosensor's capability to detect charged biomolecules, specifically deoxyribonucleic acid (DNA), which possesses a specific dielectric constant of k=6. Additionally, the manuscript evaluates the device's sensitivity in terms of its “Switching ratio,” providing a comprehensive assessment of its performance.

  • Performance Analysis of Reverse T-Shaped Tunnel Field Effect Transistor (RT-DG-TFET) Based Lable-Free Dielectric Modulation Detection of SARS-CoV-2 Virus
    K. Manikanta and Umakanta Nanda
    The Electrochemical Society
    In this paper the performance of Reverse T-Shaped Double gate Tunnel field effect transistor is investigated (RT-DG-TFET)with respect to different bio molecules for application as biosensor. The proposed device is built in order to overcome the limitations of short channel effects (SCEs) in MOSFET devices. The recent outbreak due to Corona virus demanded the requirement of a lable free, highly sensitive, quick and meticulous biosensor for the detection of SARS-CoV-2 virus. This device study records the lable free electrical detection of SARS-CoV-2 virus using RT-DG-TFET that detects the virus because of the electrical properties (dielectric constant) of different bio molecules like protein, biotin, air, strepta, APTES, DNA etc. These are studied by using different dielectric modulation techniques in biosensor application. The etched nano-cavity implanted under the gate electrode first immobilizes the SARS-CoV-2 virus, which is subsequently used to identify it. The sensitivity and different analog/RF parameters are also investigated for different bio molecules. All these simulations are investigated in TCAD Sentaurus simulator.

  • IMPLEMENTATION OF AREA EFFICIENT AND HIGH SPEED HNG GATE BASED MULTIPLIER FOR DSP APPLICATIONS


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