Abd. Wahidin Nuayi
@ung.ac.id
Physics
Universitas Negeri Gorontalo
RESEARCH INTERESTS
Materials, Biophysics, Physics, Physics Education
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
A W Nuayi, F A Noor, E Sustini, Irzaman, and T Winata
IOP Publishing
Abstract This study synthesized multi-layer graphene on a glass substrate using the high-frequency plasma-enhanced vapor deposition method with a hot wire in plasma. In the growth process, plasma was generated from methane gas (CH4) using an RF power generator at 70 MHz frequency and nickel (Ni) as the catalyst, which is deposited and annealed beforehand. This study aims as a preliminary to obtain optimum parameters for MLG growth using the HW IP-VHF-PECVD method. Raman spectroscopy, utilizing a 532 nm laser and an 1800 g/mm grating, detected distinctive D-band, G-band, and 2D-band peaks at wave numbers of 1335.31, 1607.74, and 2660.99 cm−1, respectively, in unannealed catalyst samples. Raman analysis, incorporating the I2D/IG ratio, revealed the presence of multi-layer graphene exhibiting diverse ratios (0.07 – 0.22) and crystal sizes (15.62 – 20.70 nm). SEM analysis demonstrated enhanced homogeneity in grain size and uniformity in thickness following Ni catalyst annealing. EDS confirmed the successful growth of graphene with carbon identified as the primary element. The annealing process at 400 °C for two hours resulted in graphene with a higher mass percentage and a more significant percentage of carbon atoms. These findings underscore the potential of the HW IP-VHF-PECVD method for producing multi-layer graphene, particularly in the context of solar cell applications, with further optimization of parameters.
D. G. E. Setiawan, S. M. Manoppo, Mursalin, and A. W. Nuayi
AIP Publishing
Abd. Wahidin Nuayi, Husin Alatas, Irzaman S. Husein, and Mamat Rahmat
Hindawi Limited
Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fractionx=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500°C for 15 hours with increasing rate of 1.6°C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.
Irzaman, Heriyanto Syafutra, Endang Rancasa, Abdul Wahidin Nuayi, Tb Gamma Nur Rahman, Nur Aisyah Nuzulia, Idawati Supu, Sugianto, Farly Tumimomor, Surianty,et al.
Informa UK Limited
Ferroelectric BaxSr(1-x)TiO3 thin film semiconductors with Ba/Sr ratio deposited on silicon using chemical solution deposition (CSD) method have been investigated, followed by annealing at 850°C for 15 hours. Observations by I-V meter, LCR meter, and oscilloscope were employed to characterize the electrical properties of the thin films and the observation of fourier transform spectroscopy (FTIR) and particle size analyzer (PSA) to characterize the optical properties. The results showed that the dielectric constant was given around 2–18. Moreover the obtained films were found to be resistor because the I-V graph of each sample was ohmic either in dark or bright environment. The increase of BST mol fraction at dark environment is proportional to the increase of the curve slope. While at bright environment gives the highest curve slope for BST with fraction x = 0.45. Based on electrical conductivity of thin films, we conclude that the thin films are semiconductor. Moreover, functional group and particle size of sample were analyzed using FTIR and PSA analyzer. The augmentation of Ba would decrease the transmittance band of OH− and increase the transmittance band of C-O because the radius of Ba is higher than Sr. The particle distribution size of BST 0.45 is 134.93 nm smaller than BST 0.25 which gives 186.26 nm, BST 0.35 gives value of 467.86 nm and BST 0.55 is 407.49 nm.