Prachi Sharma
@ssau.ru
Samara National Research University, Samara, Russian Federation
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Anastasiia Rymzhina, Prachi Sharma, Vladimir Pavelyev, Prabhash Mishra, and Nishant Tripathi
Elsevier BV
Mohammad Talib, Nishant Tripathi, Samrah Manzoor, Prachi Sharma, Vladimir Pavelyev, Valentyn S. Volkov, Aleksey V. Arsenin, Sergey M. Novikov, and Prabhash Mishra
MDPI AG
Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10−5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10−5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.
Mohammad Talib, Samrah Manzoor, Prachi Sharma, Nishant Tripathi, Vladimir Platonov, Vladimir Pavelyev, Valentyn S. Volkov, Aleksey V. Arsenin, Alexander V. Syuy, P.M.Z. Hasan,et al.
Elsevier BV
Anastasiia Rymzhina, Nishant Tripathi, Prachi Sharma, and Vladimir Pavelyev
De Gruyter
Vladimir Platonov, Prachi Sharma, Mikhail Ledyaev, Maria A. Anikina, Nikolay Alekseevich Djuzhev, Maksim Yuryevich Chinenkov, Nishant Tripathi, Sania Parveen, Rafiq Ahmad, Vladimir Pavelyev,et al.
MDPI AG
In this paper, we present the work of designing and fabricating a new generation of microelectromechanical systems (MEMS) based microfluidic preconcentrators (MFP) for volatile organic compounds (VOCs) quantification. The main objective of this work is to quantify the n-pentane impurities using MFP for sample preparation. The MFP was analyzed using Hewlett-Packard 5890 gas chromatography, having a flame ionization detector under isothermal conditions. The proposed MFP system includes two-microfluidic preconcentrators for continuous action and a system of four 3/2 solenoid valves with a control unit. Microfluidic preconcentrators were placed on metal plates and have circular channels filled with Al2O3 (50 μm), n-octane ResSil-C (80/100 mesh) sorbents of one nature and are hyphenated with the Peltier elements to regulate the temperature of sorption and desorption. The n-pentane quantitative determination was carried out using a calibration plot of gas mixtures on a successive dilution with the nitrogen. This study shows that the microfluidic preconcentrator system with Al2O3 and n-Octane ResSil-C sorbent concentrates the n-pentane traces up to 41 to 47 times from the gas mixture with the standard deviation of ≤5%. It has been observed that the n-octane ResSil-C based MFC shows very fast response (<5 min) and stability up to 300 cycles.
Vladimir Pavelyev, Prachi Sharma, Anastasiia Rymzhina, Prabhash Mishra, and Nishant Tripathi
Springer Science and Business Media LLC
Jaspal Singh, Prachi Sharma, Nishant Tripathi, Daria Shishkina, Anastasiia Rymzhina, Elisey A. Boltov, Vladimir Platonov, Vladimir Pavelyev, Valentyn S. Volkov, Aleksey V. Arsenin,et al.
Elsevier BV
Nishant Tripathi, Prachi Sharma, Vladimir Pavelyev, Anastasiia Rymzhina, and Prabhash Mishra
Wiley
Mohammad Talib, Nishant Tripathi, Prachi Sharma, P.M.Z. Hasan, Ammar A. Melaibari, Reem Darwesh, Aleksey V. Arsenin, Valentyn S. Volkov, Dmitry I. Yakubovsky, Sunil Kumar,et al.
Elsevier BV
Nishant Tripathi, Vladimir Pavelyev, Prachi Sharma, Sunil Kumar, Anastasiia Rymzhina, and Prabhash Mishra
Elsevier BV
Sunil Kumar, Nishant Tripathi, Prachi Sharma, Vladimir Pavelyev, Vladimir Podlipnov, Sergey Stafeev, Prabhash Mishra, Daria Shishkina, Vladimir Platonov, and Anastasiia Rymzhina
IEEE
Transition metal dichalcogenides (TMDs) are layered material with strong in-plane chemical bonds but weak out of plane van der Waals bonds. Among all TMDs, MoS2 nanostructures show exceptional electronics and optoelectronics properties. The bandgap of MoS2 is reported around 1.23eV in its bulk form while 1.8eV in monolayer form. The production of extremely thin sheets of direct semiconductor MoS2 with 1.80eV bandgap from bulk material is achieved by the process called exfoliation. Owing to its low cost, scalability and high yield production, liquid exfoliation is emerging as an excellent strategy for the synthesis of thin sheets of MoS2. The chemical exfoliation of layered bulk Molybdenum (IV) sulfide (MoS2) is carried out to obtain few layers which are semiconducting in nature. Among all the solvents for chemical exfoliation, N-methyl Pyrrolidone (NMP) is the most efficient one. The process involves ultra-sonication for 4 hours followed by centrifugation to separate the few layers from bulk MoS2. The interdigital electrodes (IDE) fingers were obtained by lithography technique on SiO2/Si substrate. The morphological, structural and opto-electronic properties of as-fabricated MoS2 nanostructure have been analyzed by utilizing SEM, Raman spectroscopy and UV- Visible spectrophotometer. The sensitive films of active materials were deposited on the IDE by using airbrush technology.
Prachi Sharma, Vladimir Pavelyev, Sunil Kumar, Prabhash Mishra, S. S. Islam, and Nishant Tripathi
Springer Science and Business Media LLC
This review article deals with orientation controlled growth of Carbon Nanotubes (CNTs). Vertically aligned CNTs (VACNTs) are considered as the best type of CNTs among all known forms. The present article covered various aspects required for the successful growth of orientation controlled CNTs especially vertically aligned form. We discussed in details about the important properties of VACNTs and the importance of VACNTs in materials science with relative applications. It included different types of CVD techniques which support the vertically aligned CNTs growth on the substrate and also supports its mass production with proper growth mechanism. We made a detailed discussion about catalyst engineering and different type of carbon sources. The catalyst lifetime is a key factor for growing long CNTs, so, the reason of catalyst poisoning and the protection of catalyst from poisoning is also a part of our article. We also explained in detail about the types of catalyst protector elements with their suitability on different temperature as well for different gases used for continuous growth of VACNTs, yarns of CNTs as well as bulk production of CNTs. We covered a broad study about the various catalysts, catalyst thickness and catalyst deposition techniques. The suitable supporting layers for different catalysts with their impacts on morphology as well as on the structure of as grown CNTs are also discussed. For reducing cost of VACNTs production, we included eco-friendly natural wastage materials for catalysts and as carbon precursor. It also included the process by which different designs and structures of VACNTs can be made specifically by bending of VACNTs during growth running time through the utilization of different catalyst reservoirs. The discussion made in present article on the growth of oriented CNTs will help to grow selective vertically aligned CNTs in the convenient way with economical rate and thereby helps in the mass production of CNTs.
Sunil Kumar, Vladimir Pavelyev, Prabhash Mishra, Nishant Tripathi, Prachi Sharma, and Fernando Calle
Elsevier BV
Abstract NO2, having a reddish-brown color and biting odor, is the most prominent toxic waste present in the atmosphere. The major contributors to NO2 gas include emissions from industrial and transport sectors. There are many porous nanostructures which have shown enormous potential for NO2 gas sensing. Among these, the first group comprises metal oxides while the second group includes two-dimensional transition metal dichalcogenides (2D TMDs). Besides, these materials have also been modified or functionalized with different metals for improving various sensing parameters such as selectivity, sensitivity, affordability, stability and life span of the device. In this article, we discuss new developments in the fields of metal oxide nanostructures and 2D TMDs for NO2 sensing. Additionally, a comparative analysis of different modifications and their effects on sensing properties of both the materials is presented.
Sunil Kumar, Vladimir Pavelyev, Nishant Tripathi, Vladimir Platonov, Prachi Sharma, Rafiq Ahmad, Prabhash Mishra, and Ajit Khosla
The Electrochemical Society
N Tripathi, V S Pavelyev, V S But, S A Lebedev, S Kumar, P Sharma, P Mishra, M A Sovetkina, S A Fomchenkov, V V Podlipnov,et al.
IOP Publishing
Abstract The analysis and optimization of optical devices manufacturing technologies based on carbon nanotubes intended for work in the visible range were carried out. These processes studied in the work have practical application for the deposition of carbon nanotubes and their subsequent use as materials for prototypes of the waveguide and sensor of the visible range. To obtain a layer of carbon nanotubes, a chemical vapor deposition chamber was used. A dense horizontal network of CNTs was grown on silicon wafer by utilizing sandwich type catalyst structure. The growth was carried out with two variable parameters: flow rate and flow duration. Various aspects of the CNTs synthesis, mechanism of CNTs growth and power dependent laser sensing are considered in this article. The remarkable properties of as developed photo detector are its fast response and recovery time with 8% sensitivity.
Prachi Sharma and Navneet Gupta
Springer Singapore
Prachi Sharma, Nishant Tripathi, and Navneet Gupta
Springer Science and Business Media LLC
In this paper e-beam evaporation technique is used for nc-Si film deposition rather than conventional plasma enhanced chemical vapor deposition (PECVD). In present work, the nc-Si films of different thicknesses (100, 150 and 200 nm) was deposited on Corning glass 1737 substrate using e-beam evaporation method with controlled beam current and deposition rate at moderately low temperature. The deposited nc-Si films were further characterized using FESEM, EDS, XRD, Raman Spectroscopy and AFM. The results of XRD and RAMAN confirm the nanocrystalline nature of the deposited film and the FESEM and AFM results demonstrate that the grain size increases with the increase in film thickness. To validate the feasibility of deposited film for TFT application, conductivity measurement is carried using 4-probe technique. The results indicate that e-beam evaporation is the cost effective alternative of PECVD and controlled grain size and density of nc-Si film can be easily achieved.
Prachi Sharma and Navneet Gupta
Springer Science and Business Media LLC
The analytical model for the threshold voltage instability in top-gated staggered nanocrystalline silicon thin-film transistor is reported. This novel model includes the effect of various physical parameters like grain size, gate insulator thickness, doping density and grain boundary trapping state on the threshold voltage shift which is never reported earlier. It is observed that the higher trap density, greater doping concentration and larger gate insulator thickness provide lesser threshold voltage shift. Further, it is found from the results of grain size analysis that if grain size is smaller than threshold voltage shift decreases with decrease in grain size. However, if grain size is larger $$(\\hbox {D}_\\mathrm{g} > 20\\,\\hbox {nm})$$(Dg>20nm) then device become stable and shows negligible threshold voltage shift. In this paper, threshold voltage shift under gate bias voltage is also analyzed and result reveals that threshold voltage increases with the bias voltage. The calculated results are compared with experimental data. The close match between the two confirms the validity of proposed study.
Prachi Sharma and Navneet Gupta
Springer Science and Business Media LLC
In this paper, various possible materials for the gate dielectric of nc-Si top-gated thin film transistor (TFT) and their material properties like dielectric constant, bandgap, conduction band offset and interface trap density are taken into consideration and Ashby’s, VlseKriterijumska Optimizacija I Kompromisno Resenje in Serbian (VIKOR) and Technique for order preference by similarity to ideal solution (TOPSIS) approaches are applied to select the most suitable gate dielectric material. The analysis results suggest that Si3N4 is the most suitable gate dielectric material for the better performance of nc-Si top-gated TFT. The results shows good agreement between Ashby’s, VIKOR and TOPSIS approaches.
P. Sharma and N. Gupta
IEEE
In this paper we have modeled the drain current based on the exponential distribution of tail states for nanocrystalline silicon thin film transistor (nc-Si TFT). The degradation of mobility due to the presence of acoustic phonons and interface roughness are taken into account. The model thus developed has been simulated for two different aspect ratios (W/L= 400 μm / 20 μm and W/L = 400 μm / 8 μm), the shape of the curves obtained are similar to the experimental ones validating the developed model.