Dr. Jaymin Ray
@utu.ac.in
Assistant Professor, Department of Physics,
Uka Tarsadia University
EDUCATION
Ph.D. in Physics (2013)
RESEARCH, TEACHING, or OTHER INTERESTS
Renewable Energy, Sustainability and the Environment, Materials Science, Condensed Matter Physics, Radiological and Ultrasound Technology
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Himanshu B. Pavagadhi, S. M. Vyas, Maunik Jani, Jaymin Ray, Vimal Patel, and Piyush Patel
Informa UK Limited
Abstract A compression technique with pelletizer is used to prepare the pellet (BULK) of pure and tin doped cadmium Telluride (CdTe) pallets. The LCR meter is used to study the dielectric properties pure and Tin doped CdTe pallets as a function of frequency in range from 20 Hz to 2 MHz A preliminary obtained data like dielectric constant (ɛ′), dielectric loss (ε″) and extensive quantities, that is, Conductivity (σ′), electric modulus (M), complex impedance (Z) has been calculated. All these properties are used to explore various processes contributed in the dielectric investigation.
Shyam Sunder Sharma, Khushboo Sharma, Jyoti Sahu, Jaymin Ray, Saral Kumar Gupta, and Saurabh Dalela
Springer Science and Business Media LLC
M.K. Jangid, S.S. Sharma, Jaymin Ray, Deepak Kumar Yadav, and Chhagan Lal
Elsevier BV
J. Ray, K. Patel, S. S. Sharma, U. Parihar, and P. R. Ghediya
Springer Science and Business Media LLC
Sabrina Tair, Prashant R Ghediya, Abdelkader Nebatti Ech-Chergui, M’hamed Guezzoul, Sanat Kumar Mukherjee, Kouider Driss-Khodja, Rajan Singh, Jaymin Ray, and Bouhalouane Amrani
IOP Publishing
AbstractThis paper reports the effect of solvent evaporation temperature on spray-coated tin disulfide (SnS2) thin films from molecular ink. Thiourea and tin chloride were the key chemical reagents used for the synthesis of SnS2transparent ink under atmospheric conditions. The structural and compositional properties of SnS2thin films revealed formation of pristine hexagonal SnS2. The films are smooth, homogeneous resulting in band gaps ranging from 2 to 2.22 eV suited for a Cd-free alternative buffer layer for Cu-based multicomponent solar cells. Thermoelectric power measurement showed that tin disulfide films exhibit n-type conductivity. Activation energy estimated from temperature variation of electrical conductivity measurement varied from 40 to 90 mV. Our results suggest that ink-processed SnS2can be used as a potential alternative for opto-electronic devices such as thin film solar cell and photodetector devices.
M.K. Jangid, S.S. Sharma, and Jaymin Ray
Trans Tech Publications, Ltd.
Mg/Al bilayer thin films were successfully deposited by using D.C. magnetron sputtering technique. To study the effect of hydrogenation on structural, optical and electrical properties of Mg/Al thin films, the hydrogenation of the annealed thin films was done under different hydrogen pressure (15, 30 & 30psi). The structural properties of the films were investigated by Raman spectroscopy and decrease in intensity of Raman peaks with increasing hydrogen pressure was observed; this typically confirms the existence of hydrogen in Mg/Al thin films. The thin film is of semiconducting nature and it was found that the electrical conductivity of the film decreases with increasing hydrogen pressure applied. In the hydriding kinetics of the films, it was seen that the resistivity increased along with hydrogen absorption time. Eventually, it attains the equilibrium stage indicating the hydrogen absorption in the thin films. The rate of absorption of hydrogen increases with the pressure of hydrogen over different time ranges and decreases with the absorption of hydrogen over time.
M.K. Jangid, S.S. Sharma, Jaymin Ray, and Satish Jangid
Elsevier BV
Prashant R. Ghediya, Yash M. Palan, Drashti P. Bhangadiya, Ishrat I. Nakani, Tapas K. Chaudhuri, Kinjal Joshi, C.K. Sumesh, and Jaymin Ray
Elsevier BV
Jaymin Ray, Keyur Patel, Gopal Bhatt, Priya Suryavanshi, and C. J. Panchal
Wiley
Usha Parihar, Jaymin Ray, C J Panchal, and Naresh Padha
Springer Science and Business Media LLC
Prashant R. Ghediya, Tapas K. Chaudhuri, Jaymin Ray, Heena L. Panjwani, Priyanka J. Hemani, Priya P. Paneri, Ravirajsinh J. Jadav, Keyur D. Rupapara, and Ritesh R. Joshi
Elsevier BV
Prashant R. Ghediya, Tapas K. Chaudhuri, and Jaymin Ray
Springer Science and Business Media LLC
Jaymin Ray, Kinjal Patel, Keyur Patel, Gopal Bhatt, and Usha Parihar
Elsevier BV
Nisarg Chodavadiya, Amisha Chapanari, Jignesh Zinzala, Jaymin Ray, and Samir Pandya
Author(s)
An II-VI group semiconductor is Wide band gap materials and has been widely studied due to their fundamental optical, structural, and electrical properties. Cadmium sulphide (CdS) is one of the most emerged materials in II-VI group. It has many applications such as buffer later in photovoltaic cell, multilayer light emitting diodes, optical filters, thin film field effect transistors, gas sensors, light detectors etc. It is fundamentally an n-type material with an optical band gap of 2.4 eV. Owing to these properties we had studied CdS thin films synthesis and characterized by Raman, Ultraviolet – Visible spectroscopy (UV-VIS) and Hot probe method. CdS thin films were prepared by spin coating of the Cadmium-thiourea precursor solution. Visual inspection after 20 minute thermolysis time the films were looks uniform and shiny pale yellow in color. Raman confirms the A1 vibration of pure CdS. UV-VIS gives the band gap about 2.52 eV, which confirms the formation of nanocrystalline form of CdS. Finally, hot probe signifies the n-type conductivity of the CdS film.An II-VI group semiconductor is Wide band gap materials and has been widely studied due to their fundamental optical, structural, and electrical properties. Cadmium sulphide (CdS) is one of the most emerged materials in II-VI group. It has many applications such as buffer later in photovoltaic cell, multilayer light emitting diodes, optical filters, thin film field effect transistors, gas sensors, light detectors etc. It is fundamentally an n-type material with an optical band gap of 2.4 eV. Owing to these properties we had studied CdS thin films synthesis and characterized by Raman, Ultraviolet – Visible spectroscopy (UV-VIS) and Hot probe method. CdS thin films were prepared by spin coating of the Cadmium-thiourea precursor solution. Visual inspection after 20 minute thermolysis time the films were looks uniform and shiny pale yellow in color. Raman confirms the A1 vibration of pure CdS. UV-VIS gives the band gap about 2.52 eV, which confirms the formation of nanocrystalline form of CdS. Finally, hot pr...
Kinjal Patel and Jaymin Ray
Author(s)
K. J. Patel, G. G. Bhatt, J. R. Ray, Priya Suryavanshi, and C. J. Panchal
Springer Science and Business Media LLC
K. J. Patel, , G. G. Bhatt, S. S. Patel, R. R. Desai, J. R. Ray, C. J. Panchal, Priya Suryavanshi, V. A. Kheraj, A. S. Opanasyuk,et al.
Sumy State University
1 BITS Edu Campus, Varnama, Vadodara, Gujarat, India 2 Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India 3 H. V. H. P. Institute of P.G. Studies and Research, Kadi Sarva Vishwavidyalaya, Kadi, Gujarat, India 4 The M. S. University of Baroda, Vadodara-390001, India 5 S. V. National Institute of Technology, Surat 395007, India 6 Sumy State University, 2, Rymskyi-Korsakov Str., 40007 Sumy, Ukraine
Jaymin Ray, , Tapas K. Chaudhuri, Chetan Panchal, Kinjal Patel, Keyur Patel, Gopal Bhatt, Priya Suryavanshi, , ,et al.
Sumy State University
Nanoscale PbS, especially quantum dots (QDs) are of interest in applications, such as, solar cells and photodetectors because of tunability of band gap from 0.5 to 3 eV. Recently, ZnO/PbS solar cells with 8.55 % conversion efficiency have been reported with films made deposited from ligand exchanged PbS QDs. However, nanocrystalline PbS is easier to fabricate than QDs. This paper reports theoretical investigation into the use of nanocrystalline PbS in place of QDs as solar cell absorber. Solar cells with a structure of SLG/ITO/ZnO or CdS/PbS/Al was simulated using SCAPS software. We have used two n-type materials one is ZnO and second is CdS. The comparative simulated device performance was studied by currentvoltage (I-V) characteristics and quantum efficiency (QE). The final results reveal a power conversion effi-
Jaymin Ray, Mitesh Patel, Prashant Ghediya, and Tapas K Chaudhuri
IOP Publishing
Nickel sulphide (NiS) film has emerged as a counter electrode in many applications, such as thin film batteries, dye sensitized solar cells, and supercapacitors. In this regard, we report the direct liquid coating of pure hexagonal NiS films on glass using a precursor solution of nickel–thiourea complex. A uniform and void free film is observed using scanning electron microscopy. The room temperature electrical conductivity of ∼5 × 103 S cm−1 and the positive thermoelectric power (+6 μV K−1) specify p-type conduction. The temperature variation conductivity in the range 77–300 K depicts the transition of NiS films from conducting to semi-conducting behaviour at certain transition temperatures. Preliminary results from a cyclic voltammetry study shows the feasibility of NiS films as counter electrodes.
Usha Parihar, Jaymin Ray, C. J. Panchal, and Naresh Padha
Springer Science and Business Media LLC
Prashant R. Ghediya, Tapas K. Chaudhuri, and Jaymin R. Ray
Author(s)
Mott variable range hopping conduction in dip-coated CZTS thin films has been studied in the temperature range of 77 to 150 K in dark and under different light intensities. The films were basically p-type and photoconducting. Various hopping parameters such as, Mott characteristic temperature, density of states at Fermi level, hopping distance and hopping energy of the CZTS films were investigated for different light intensities.
Dhaval Vankhade, Jaymin Ray, and Tapas K Chaudhuri
American Scientific Publishers
Mitesh H Patel, Tapas K Chaudhuri, Jaymin Ray, and Sachin Joshi
American Scientific Publishers