Dipjyoti Das received his B.E. degree in Electronics and Telecommunication Engineering from Assam Engineering College, Gauhati University, Assam, India, and the Ph.D. degree in Organic Optoelectronic Devices from Indian Institute of Technology Guwahati, Assam, India in 2018. He worked as a postdoctoral fellow in Electrical Engineering Department, Korea Advanced Institute of Science and Technology (KAIST) from August 1, 2018 to August 31, 2020. He will be joining as a post doctoral fellow in the School of Electrical and Computer Engineering (ECE) at the Georgia Institute of Technology soon. His current research interests include high-k ferroelectric HZO capacitors, energy storage capacitors, FEFETs and neuromorphic engineering.
EDUCATION
PhD, Indian Institute of Technology Guwahati
RESEARCH INTERESTS
Organic Optoelectronic Devices, CMOS compatible hafnia based memory devices
Pushing the limits of NAND technology scaling with ferroelectrics Prasanna Venkatesan, Lance Fernandes, Sanghyun Kang, Priyankka Ravikumar, Taeyoung Song, et al. MRS Bulletin, 2025 Artificial intelligence (AI) continues to drive transformative advancements across various industries. The data-intensive nature of AI training (and inferencing) has resulted in the generation of unprecedented volumes of data with machine-generated content surpassing human-generated data by more than 100-fold in 2025. Efficiently managing this data influx necessitates advanced digital storage technologies. However, traditional NAND flash memory, which is critical for supporting data flows in AI systems—alongside high-bandwidth memory, for AI training—faces fundamental scaling limitations as it approaches the 1000-layer milestone, encompassing more than 40 trillion transistors. This article delves into the potential of hafnia-based ferroelectric materials as a breakthrough solution to these challenges. Recent advancements indicate that the intrinsic limitations of ferroelectric field-effect transistors (FEFETs) can be mitigated through material and device-level engineering. These advancements enable FEFETs to meet the stringent density, reliability, and scalability requirements of future three-dimensional NAND technology. The role of ferroelectrics in addressing NAND scaling challenges and expanding storage capabilities presents a promising avenue for meeting the storage demands of the AI-driven era.
Analysis of the effect of heavy ion radiation on the transient behaviour for split oxide heterojunction double gate tunnel FETs A Saida, D Das, R Saha Journal of Computational Electronics 25 (3), 101 , 2026 2026
Lead-Free Cs2CuBiCl6 Double Perovskite for ReRAM: Electrode-Dependent Resistive Switching and Performance Analysis R Sutradhar, CK Pradhan, HJ Gogoi, PP Devi, K Gogoi, D Das Memories-Materials, Devices, Circuits and Systems, 100140 , 2026 2026
Pushing the limits of NAND technology scaling with ferroelectrics: P. Venkatesan et al. P Venkatesan, L Fernandes, S Kang, P Ravikumar, T Song, C Park, ... MRS Bulletin 50 (9), 1094-1107 , 2025 2025 Citations: 10
Optimizing memory window for ferroelectric NAND applications: An experimental study on dielectric material selection and layer positioning L Fernandes, PV Ravindran, J Chen, M Tian, D Das, H Chen, W Chern, ... IEEE Transactions on Electron Devices 72 (1), 234-239 , 2024 2024 Citations: 16
Disturb and its mitigation in ferroelectric field-effect transistors with large memory window for nand flash applications P Venkatesan, C Park, T Song, L Fernandes, D Das, N Afroze, ... IEEE Electron Device Letters 45 (12), 2367-2370 , 2024 2024 Citations: 18
Material choices for tunnel dielectric layer and gate blocking layer for ferroelectric NAND applications L Fernandes, PV Ravindran, T Song, D Das, C Park, N Afroze, M Tian, ... IEEE Electron Device Letters 45 (10), 1776-1779 , 2024 2024 Citations: 25
Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors C Park, PV Ravindran, D Das, PG Ravikumar, C Zhang, N Afroze, ... IEEE Journal of the Electron Devices Society 12, 569-572 , 2024 2024 Citations: 6
Design framework for ferroelectric gate stack engineering of vertical NAND structures for efficient TLC and QLC operation D Das, L Fernandes, PV Ravindran, T Song, C Park, N Afroze, M Tian, ... 2024 IEEE International Memory Workshop (IMW), 1-4 , 2024 2024 Citations: 10
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions PG Ravikumar, PV Ravindran, KA Aabrar, T Song, SG Kirtania, D Das, ... 2024 IEEE international reliability physics symposium (IRPS), 1-5 , 2024 2024 Citations: 5
The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors M Passlack, N Tasneem, C Park, PV Ravindran, H Chen, D Das, S Yu, ... Journal of Applied Physics 135 (13) , 2024 2024 Citations: 9
Ferroelectric gate stack engineering with tunnel dielectric insert for achieving high MemoryWindow in FEFETs for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3 , 2024 2024 Citations: 12
Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2023 International Electron Devices Meeting (IEDM), 1-4 , 2023 2023 Citations: 64
Interfacial Oxide Layer Scavenging in Ferroelectric Hf 0.5 Zr 0.5 O 2 -Based MOS Structures With Ge Channel for Reduced Write Voltages C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ... IEEE Transactions on Electron Devices 70 (8), 4479-4483 , 2023 2023 Citations: 8
A Ge-channel ferroelectric field effect transistor with logic-compatible write voltage D Das, PV Ravindran, C Park, N Tasneem, Z Wang, H Chen, W Chern, ... IEEE Electron Device Letters 44 (2), 257-260 , 2022 2022 Citations: 19
Substantial efficiency enhancement in solution processed phosphorescent light emitting diode with polymer host: Efficient optimization of charge balance and processing conditions D Das, P Gopikrishna, D Barman, RB Yathirajula, PK Iyer Journal of Physics and Chemistry of Solids 163, 110577 , 2022 2022 Citations: 4
Sub 5 Å-EOT Hf ₓ Zr 1– x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid … D Das, B Buyantogtokh, V Gaddam, S Jeon IEEE Transactions on Electron Devices 69 (1), 103-108 , 2021 2021 Citations: 51
Ferroelectricity in CMOS-compatible hafnium oxides: Reviving the ferroelectric field-effect transistor technology D Das, AI Khan IEEE Nanotechnology Magazine 15 (5), 20-32 , 2021 2021 Citations: 59
Ferroelectricity Enhancement in Hf 0.5 Zr 0.5 O 2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process V Gaddam, D Das, T Jung, S Jeon IEEE Electron Device Letters 42 (6), 812-815 , 2021 2021 Citations: 67
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich Hf ₓ Zr₁₋ ₓ O₂Capacitors D Das, B Buyantogtokh, V Gaddam, S Jeon IEEE Transactions on Electron Devices 68 (4), 1996-2002 , 2021 2021 Citations: 55
Low-Temperature Growth of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Assisted by Deep Ultraviolet Light Irradiation H Joh, G Anoop, WJ Lee, D Das, JY Lee, TY Kim, H Kim, WJ Seol, J Yeom, ... ACS Applied Electronic Materials 3 (3), 1244-1251 , 2021 2021 Citations: 27
MOST CITED SCHOLAR PUBLICATIONS
The influence of top and bottom metal electrodes on ferroelectricity of hafnia Y Lee, Y Goh, J Hwang, D Das, S Jeon IEEE Transactions on Electron Devices 68 (2), 523-528 , 2021 2021 Citations: 213
Insertion of HfO 2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors V Gaddam, D Das, S Jeon IEEE Transactions on Electron Devices 67 (2), 745-750 , 2020 2020 Citations: 153
Improved molecular architecture of D–π–A carbazole dyes: 9% PCE with a cobalt redox shuttle in dye sensitized solar cells SS Soni, KB Fadadu, JV Vaghasiya, BG Solanki, KK Sonigara, A Singh, ... Journal of Materials Chemistry A 3 (43), 21664-21671 , 2015 2015 Citations: 118
High-k Hf x Zr 1-x O₂ Ferroelectric Insulator by Utilizing High Pressure Anneal D Das, S Jeon IEEE Transactions on Electron Devices 67 (6), 2489-2494 , 2020 2020 Citations: 77
Ferroelectricity Enhancement in Hf 0.5 Zr 0.5 O 2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process V Gaddam, D Das, T Jung, S Jeon IEEE Electron Device Letters 42 (6), 812-815 , 2021 2021 Citations: 67
Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2023 International Electron Devices Meeting (IEDM), 1-4 , 2023 2023 Citations: 64
Electroluminescent room temperature columnar liquid crystals based on bay-annulated perylene tetraesters RK Gupta, D Das, M Gupta, SK Pal, PK Iyer, AS Achalkumar Journal of Materials Chemistry C 5 (7), 1767-1781 , 2017 2017 Citations: 64
Demonstration of High Ferroelectricity (P ~ 29 C/cm 2 ) in Zr Rich Hf x Zr 1–x O 2 Films D Das, V Gaddam, S Jeon IEEE Electron Device Letters 41 (1), 34-37 , 2019 2019 Citations: 60
Ferroelectricity in CMOS-compatible hafnium oxides: Reviving the ferroelectric field-effect transistor technology D Das, AI Khan IEEE Nanotechnology Magazine 15 (5), 20-32 , 2021 2021 Citations: 59
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich Hf ₓ Zr₁₋ ₓ O₂Capacitors D Das, B Buyantogtokh, V Gaddam, S Jeon IEEE Transactions on Electron Devices 68 (4), 1996-2002 , 2021 2021 Citations: 55
Sub 5 Å-EOT Hf ₓ Zr 1– x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid … D Das, B Buyantogtokh, V Gaddam, S Jeon IEEE Transactions on Electron Devices 69 (1), 103-108 , 2021 2021 Citations: 51
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr 1-x O₂ Capacitors D Das, V Gaddam, S Jeon IEEE Electron Device Letters 42 (3), 331-334 , 2021 2021 Citations: 50
Organic semiconductors: a new future of nanodevices and applications A Dey, A Singh, D Das, PK Iyer Thin film structures in energy applications, 97-128 , 2015 2015 Citations: 47
White light emitting diode based on purely organic fluorescent to modern thermally activated delayed fluorescence (TADF) and perovskite materials D Das, P Gopikrishna, D Barman, RB Yathirajula, PK Iyer Nano Convergence 6 (1), 31 , 2019 2019 Citations: 44
Solution processed donor–acceptor polymer based electrical memory device with high on/off ratio and tunable properties R Narasimhan Arunagirinathan, P Gopikrishna, D Das, PK Iyer ACS Applied Electronic Materials 1 (4), 600-607 , 2019 2019 Citations: 38
Effect of dual cathode buffer layer on the charge carrier dynamics of rrP3HT: PCBM based bulk heterojunction solar cell A Singh, A Dey, D Das, PK Iyer ACS applied materials & interfaces 8 (17), 10904-10910 , 2016 2016 Citations: 36
White polymer light emitting diodes based on PVK: the effect of the electron injection barrier on transport properties, electroluminescence and controlling the electroplex … D Das, P Gopikrishna, R Narasimhan, A Singh, A Dey, PK Iyer Physical Chemistry Chemical Physics 18 (48), 33077-33084 , 2016 2016 Citations: 29
Low-Temperature Growth of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Assisted by Deep Ultraviolet Light Irradiation H Joh, G Anoop, WJ Lee, D Das, JY Lee, TY Kim, H Kim, WJ Seol, J Yeom, ... ACS Applied Electronic Materials 3 (3), 1244-1251 , 2021 2021 Citations: 27
First example of white organic electroluminescence utilizing perylene ester imides RK Gupta, D Das, PK Iyer, AS Achalkumar ChemistrySelect 3 (18), 5123-5129 , 2018 2018 Citations: 27
Synthesis and characterization of color tunable, highly electroluminescent copolymers of polyfluorene by incorporating the N-phenyl-1, 8-naphthalimide moiety into the main chain P Gopikrishna, D Das, PK Iyer Journal of Materials Chemistry C 3 (36), 9318-9326 , 2015 2015 Citations: 27
