Jia Siqi
Verified @163.com
Department of Materials Science and Engineering | Jilin University；Department of Electrical and Electronic Engineering | Southern University of Science and Technology
Department of Materials Science and Engineering | Jilin University；Department of Electrical and Electronic Engineering | Southern University of Science and Technology
Siqi Jia is currently a Ph.D. candidate with the Department of Materials Science and Engineering at Jilin University and a visiting Ph.D. candidate at South University of Science and Technology. His research focuses on QLEDs, biomaterial, and inkjet printing technology.
EDUCATION
2013/09-2017/07 Jilin University Department of Materials Science and Engineering Metal Material Engineering BEng
2017/09-2022/07 Jilin University Department of Materials Science and Engineering Materials Science Ph.D. Candidate
2019/04-2021/04 Sustech Department of Electrical and Electronic Engineering Photoelectron Information & Science Visiting Ph.D. Candidate
RESEARCH INTERESTS
Inkjet Printing technology; Quantum Dots; Display; Semiconductor device; Biomaterials
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Nan ZHANG, , Qijie XIE, Quanxin NA, Dengfeng LUO, Siqi JIA, Kai WANG, and
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Depeng Li, Jingrui Ma, Wenbo Liu, Guohong Xiang, Xiangwei Qu, Siqi Jia, Mi Gu, Jiahao Wei, Pai Liu, Kai Wang,et al.
IOP Publishing
Abstract The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m2, and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.
Siqi Jia, Depeng Li, Yixing Chen, Guanding Mei, Jingrui Ma, Xiangwei Qu, Haodong Tang, Pai Liu, Bing Xu, Kai Wang,et al.
Wiley
AbstractWe report a 0.39‐in. quantum dot light‐emitting diode (QLED) microdisplay with full high‐definition (FHD, 1920 × 1080) resolution by integrating a red top‐emitting QLED on a complementary metal–oxide–semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing a suitable energy‐level structure for the QLED devices, the performance of the large‐area (4.9 × 8.7 mm2) top‐emitting device with normal structure reached 13,936 cd/m2 of brightness at 5‐V bias with 13.3% external quantum efficiency (EQE). Notably, the optimal device showed a low turn‐on voltage of 1.7 V, which matched well the voltage output of the CMOS backplane. Our work demonstrates the great promise of QLED microdisplays for applications in head‐mounted augmented reality/virtual reality (AR/VR).
Xiangwei Qu, Wenbo Liu, Depeng Li, Jingrui Ma, Mi Gu, Siqi Jia, Guohong Xiang, and Xiao Wei Sun
Royal Society of Chemistry (RSC)
Exciton quenching at the QD–ETL interface is unintentionally avoided, which bridges interfacial exciton quenching and high performance in a quantum dot light-emitting diode.
Siqi Jia, Menglei Hu, Mi Gu, Jingrui Ma, Depeng Li, Guohong Xiang, Pai Liu, Kai Wang, Peyman Servati, Wei Kun Ge,et al.
Wiley
AbstractAs the electron transport layer in quantum dot light‐emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge‐imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in‐depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based on the simulations, thiol ligands (specifically 2‐hydroxy‐1‐ethanethiol) to modify the ZnO nanocrystals are adopted. This modification alleviates the excess electrons without causing any additional issues in the charge injection in QLEDs. This modification strategy proves to be effective in improving the performance of red‐emitting QLEDs, achieving an external quantum efficiency of over 23% and a remarkably long lifetime T95 of >12 000 h at 1000 cd m−2. Importantly, the relationship between ZnO layers with different electronic properties and their effect on the adjacent QDs through a single QD measurement is investigated. These findings show that the ZnO surface defects and electronic properties can significantly impact the device performance, highlighting the importance of optimizing the ZnO–QD interface, and showcasing a promising ligand strategy for the development of highly efficient QLEDs.
Jingrui Ma, Haodong Tang, Xiangwei Qu, Guohong Xiang, Siqi Jia, Pai Liu, Kai Wang, and Xiao Wei Sun
IOP Publishing
We present dC/dV analysis based on the capacitance-voltage (C–V) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical and optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to the turning points and maximum/minimum of the dC/dV (versus voltage) curve. By the dC/dV study, the behaviors such as low turn-on voltage, simultaneous electrical and optical turn-on process, and carrier accumulation during the device aging can be well explained. Moreover, we perform the C–V and dC/dV measurement of aged devices, and confirm that our dC/dV analysis is correct for them. Thus, our dC/dV analysis method can be applied universally for QLED devices. It provides an in-depth understanding of carrier dynamics in QLEDs through simple C–V measurement.
Nan Zhang, Quanxin Na, Qijie Xie, and Siqi Jia
MDPI AG
Lead halide perovskite is a new photovoltaic material with excellent material characteristics, such as high optical absorption coefficient, long carrier transmission length, long carrier lifetime and low defect state density. At present, the steady-state photoelectric conversion efficiency of all-perovskite laminated cells is as high as 28.0%, which has surpassed the highest efficiency of monocrystalline silicon cells (26.7%). In addition to its excellent photovoltaic properties, perovskite is also a type of direct bandgap semiconductor with low cost, solubilization, high fluorescence quantum efficiency and tunable radiation wavelength, which brings hope for the realization of electrically pumped low-cost semiconductor lasers. In recent years, a variety of perovskite lasers have emerged, ranging from the type of resonator, the wavelength and pulse width of the pump source, and the preparation process. However, the current research on perovskite lasers is only about the type of resonator, the type of perovskite and the pump wavelength, but the performance of the laser itself and the practical application of perovskite lasers are still in the initial stages. In this review, we summarize the recent developments and progress of solution-processed perovskite semiconductors lasers. We discuss the merit of solution-processed perovskite semiconductors as lasing gain materials and summarized the characteristics of a variety of perovskite lasers. In addition, in view of the issues of poor stability and high current density required to achieve electrically pumped lasers in perovskite lasers, the development trend of perovskite lasers in the future is prospected.
Taikang Ye, Siqi Jia, Zhaojin Wang, Rui Cai, Hongcheng Yang, Fangqing Zhao, Yangzhi Tan, Xiaowei Sun, Dan Wu, and Kai Wang
MDPI AG
As an effective manufacturing technology, inkjet printing is very suitable for the fabrication of perovskite light-emitting diodes in next-generation displays. However, the unsatisfied efficiency of perovskite light-emitting diode created with the use of inkjet printing impedes its development for future application. Here, we report highly efficient PeLEDs using inkjet printing, with an external quantum efficiency of 7.9%, a current efficiency of 32.0 cd/A, and the highest luminance of 2465 cd/m2; these values are among the highest values for the current efficiency of inkjet-printed PeLED in the literature. The outstanding performance of our device is due to the coffee-ring-free and uniform perovskite nanocrystal layer on the PVK layer, resulting from vacuum post-treatment and using a suitable ink. Moreover, the surface roughness and thickness of the perovskite layer are effectively controlled by adjusting the spacing of printing dots. This study makes an insightful exploration of the use of inkjet printing in PeLED fabrication, which is one of the most promising ways for future industrial production of PeLEDs.
Jingrui Ma, Siqi Jia, Xiangwei Qu, Haodong Tang, Bing Xu, Zhenghui Wu, Pai Liu, Kai Wang, Xiaochuan Yang, Wenwei Xu,et al.
Wiley
Siqi Jia, Pai Liu, Jingrui Ma, Xiangwei Qu, Haodong Tang, Depeng Li, Jing Tang, Zhaojin Wang, Guangyu Li, Kai Wang,et al.
Wiley
Tianxiao Wang, Siqi Jia, Yingchao Xu, Yunqian Dong, Yunting Guo, Zilong Huang, Guangyu Li, and Jianshe Lian
Elsevier BV
Xiangwei Qu, Jingrui Ma, Siqi Jia, Zhenghui Wu, Pai Liu, Kai Wang, and Xiao-Wei Sun
IOP Publishing
In blue quantum dot light emitting diodes (QLEDs), electron injection is insufficient, which would degrade device efficiency and stability. Herein, we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively. Moreover, it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel. As a result, the maximum external quantum efficiency of blue QLED was increased from 2.55% to 4.60%, and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device. Our work indicates that election injection plays an important role in blue QLED efficiency and stability.
Siqi Jia, Haodong Tang, Jingrui Ma, Shihao Ding, Xiangwei Qu, Bing Xu, Zhenghui Wu, Guangyu Li, Pai Liu, Kai Wang,et al.
Wiley
项国洪 Xiang Guohong, 贾思琪 Jia Siqi, 李德鹏 Li Depeng, 马精瑞 Ma Jingrui, 刘湃 Liu Pai, 王恺 Wang Kai, 郭海成 Hoi-Sing Kwok, 余明斌 Yu Mingbin, and 孙小卫 Sun Xiaowei
Shanghai Institute of Optics and Fine Mechanics
Haodong Tang, Siqi Jia, Shihao Ding, Pai Liu, Jingrui Ma, Xiangtian Xiao, Xiangwei Qu, Haochen Liu, Hongcheng Yang, Bing Xu,et al.
American Chemical Society (ACS)
Zuoliang Wen, Pai Liu, Jingrui Ma, Siqi Jia, Xiangtian Xiao, Shihao Ding, Haodong Tang, Hongcheng Yang, Chaojian Zhang, Xiangwei Qu,et al.
Wiley
Siqi Jia, Jingrui Ma, Xiangwei Qu, Haodong Tang, Zhenghui Wu, Bing Xu, Pai Liu, Guangyu Li, Kai Wang, and Xiao Wei Sun
Wiley
Siqi Jia, Jingrui Ma, Xiangwei Qu, Haodong Tang, Zhenghui Wu, Bing Xu, Pai Liu, Guangyu Li, Kai Wang, and Xiao Wei Sun
Wiley
Haodong Tang, Siqi Jia, Shihao Ding, Pai Liu, Jingrui Ma, Kai Wang, and Xiao Wei Sun
Wiley
Jingrui Ma, Siqi Jia, Xiangwei Qu, Haodong Tang, Bing Xu, Zhenghui Wu, Pai Liu, Kai Wang, and Xiao Wei Sun
Wiley
Siqi Jia, Jingrui Ma, Pai Liu, Zhenghui Wu, Bing Xu, Jing Tang, Guangyu Li, Kai Wang, and Xiao Wei Sun
Wiley
Jingrui Ma, Siqi Jia, Haodong Tang, Xiangwei Qu, Bing Xu, Zhenghui Wu, Pai Liu, Jing Tang, Kai Wang, and Xiao Wei Sun
Wiley
Yunting Guo, Siqi Jia, Lu Qiao, Yingchao Su, Rui Gu, Guangyu Li, and Jianshe Lian
Elsevier BV
Magnesium (Mg) and its alloys exhibit great potential in clinical applications owing to the outstanding biological performance and excellent mechanical properties, whereas the quick corrosion rate in the physiological environment has limited their further clinical application. In this work, we designed and developed a multifunctional polypyrrole/zinc oxide (Ppy/ZnO) composite coating by cyclic voltammetry method, aiming to enhance the biocorrosion resistance, biocompatibility and antibacterial property of the Mg alloys. The electrochemical and immersion tests indicated that the corrosion resistance of the Mg alloy was improved significantly by the composite coating. A systematic in vitro investigation of cellular response confirmed that the composite coating significantly promoted the adhesion and proliferation of cells. In addition, the composite coating showed a remarkable antibacterial ability of 96.5 ± 2.6 % against Escherichia coli (E.coli). The enhanced corrosion resistance, cytocompatibility, and antibacterial property of the Ppy/ZnO coated Mg alloy makes it a promising candidate as orthopedic implants material.
Hongcheng Yang, Miao Zhou, Haodong Tang, Mingyu Sun, Pai Liu, Yizun Liu, Lixuan Chen, Dongze Li, Dan Wu, Junjie Hao,et al.
Royal Society of Chemistry (RSC)
We report QD films based on a poly(zinc methacrylate) coating with alloyed green-emitting CdZnSeS/ZnS quantum dots (QDs@PZnMA) together with high refractive-index BaTiO3 nanoparticles to enhance the scattering coefficient of the QD films.
Siqi Jia, Guangyu Li, Pai Liu, Rui Cai, Haodong Tang, Bing Xu, Zhaojin Wang, Zhenghui Wu, Kai Wang, and Xiao Wei Sun
Wiley