Comparative Analysis of AlN/β-Ga2O3 and MgZnO/CdZnO Gate All Around Field Effect Transistors (GAA-FETs) for Analog/RF Applications Yogesh Kumar Verma, Varun Mishra, Manoj Singh Adhikari, Suman Lata Tripathi, Santosh Kumar Gupta Journal of Circuits Systems and Computers, 2025 In this work, a 3-D model is presented for the comparative analysis of different Figures of merit (FOM) for MgZnO/CdZnO and AlN/Ga2O3 Gate All Around Field Effect Transistor (GAA-FET). It is noticed within the analyzed device geometries that for different values of channel length (CL), temperature (T) and channel height (H); the peak magnitude of transconductance ([Formula: see text]) for ZnO-based GAA-FET is higher than Ga2O3-based GAA-FET relatively by 0.996 for CL = 20[Formula: see text]nm and [Formula: see text] = 1[Formula: see text]V. The peak magnitude of second and third-order voltage intercept points, i.e., VIP2, VIP3 and third-order intercept input power (IIP3) for ZnO-based GAA-FET is noticed to be higher than Ga2O3-based GAA-FET relatively by 0.89, 0.59 and 0.80, respectively, for CL of 30 nm at [Formula: see text] = 1[Formula: see text]V. On the contrary, the Ga2O3-based GAA-FET is analyzed to exhibit lower peak magnitude of first and second-order derivatives of [Formula: see text], i.e., [Formula: see text], [Formula: see text] and third-order intermodulation distortion (IMD3) relatively by 0.94, 0.66 and 3.59[Formula: see text]dB, respectively, for CL = 20[Formula: see text]nm and [Formula: see text] = 1[Formula: see text]V as compared to Ga2O3 based GAA-FET. It is noticed that the AlN/[Formula: see text]-Ga2O3 GAA-FET provides a lower magnitude of output conductance than MgZnO/CdZnO GAA-FET, thus highlighting it as a potential contender for analog circuit applications.
Artificial Intelligence Enabled Cognitive Computing for AlN/β-Ga2O3 HEMT Yogesh Kumar Verma, Kamal Bhatia, Khushboo, Aastha Bhanot, Trijeeta Roy, Supriya Sinha, Laksh 2025 2nd International Conference on Computational Intelligence Communication Technology and Networking Cictn 2025, 2025 HEMT devices have potential to handle the fast processing in applications such as real-time diagnostics utilizing the artificial-intelligence (AI) enhanced abilities. Along-with this HEMT devices can be extensively used in radar and defense systems to obtain faster response time and threat detection. This integration of AI and cognitive computing enables pattern-recognition and adaptive learning. The cognitive computing techniques integrated with HEMT enables the real-time analysis and predictions. For precise sensor data the amplification should be done at either no or very less noise levels.
Design analysis of 4H-SiC MOSFET for high power application Raju Patel, Manoj Singh Adhikari, Manoj Sindhwani, Yogesh Kumar Verma, Soumya Ranjan Mahapatro Physica Scripta, 2024 Silicon Carbide has emerged as a promising candidate due to its superior material properties such as high breakdown voltage, wide bandgap, and high thermal conductivity. A new dual channel trench-based high power MOSFET (DTMOS) on 4H-SiC is presented. The DTMOS device features two trenches, each containing a poly-Si gate positioned on opposite sides of the P-base region. This configuration results in two parallel channels within the device. The unique design of the DTMOS leverages the RESURF effect and parallel conduction of the drive current, leading to notable performance improvements. The AC and DC characteristics of the DTMOS are analyzed and compared with PRMOS using 2D simulations. The results demonstrate the superior performance of the DTMOS compared to the PRMOS. Specifically, the DTMOS exhibits 2.35 times higher drive current, an 88% enhancement in gain, 52% higher breakdown voltage, an 11% reduction in threshold potential, a 43% decrease in on-resistance, and 5.55 times higher FOM compared to the PRMOS.
Fabrication and Development of a Biomass-Based Supercapacitor with Enhanced Energy Storage Characteristics Haziqul Yaquin, G. Raam Dheep, Yogesh Kumar Verma Ecs Journal of Solid State Science and Technology, 2024 In this work, a raw carbon waste parali biomass is collected to develop a supercapacitor. The activated carbon developed is characterized using X-ray diffraction (XRD), Field effect scanning electron microscope (FESEM), Energy dispersive spectroscope (EDS), and Brunauer–Emmett–Teller (BET) analyses. The porous and crystalline activated carbon achieved a remarkably high carbonaceous value of 99.85% carbon from 35.71% in raw state. The specific surface area obtained is 151.42 m2 g−1 and the porosity (average pore diameter) is 2–10 nm of the optimized activated carbon. The activated carbon is explored as electrode material for supercapacitor in aqueous electrolyte and the specific capacitance was found to be a maximum of 247 F g−1 at 1.2 A g−1 to a stable value of 180 F g−1 at 10 A g−1. The symmetrical supercapacitor device, featuring electrodes composed of carbon material, attains an impressive energy density of 54 Wh kg−1 along with outstanding coulombic efficiency and stability. The laboratory prototype supercapacitor has successfully powered consumer electronics, such as a DC (direct current) motor for 12.5 min and an LED (Light emitting diode) bulb for 14 min, on a single charge in each case.
Electrical Characterization of Multi-Gate MOSFET with Reduced Short-Channel Effects for High-Power Applications Nagalakshmi Yarlagadda, Yogesh Kumar Verma, G. Amarnath, R. Santosh, Manoj Singh Adhikari International Journal of Nanoscience, 2024 The double-gate MOSFET is proposed for high-voltage and high-power applications with decreased short-channel effects (SCEs) and drain current with gate overlap. This model explicitly incorporates the SCEs for thin-layered MOSFETs with large drain regions. The device’s short-channel effects are decreased through the drain-resistance effect present in the device. The gate contact overlapped region significantly affects the device operation for high-voltage FETs. These effects are modeled by self-consistent solutions of available multigate MOSFET device models with potential distribution. The demonstrated model can be further applied for size limitations in the modeling of multigate MOSFETs.
Impact of single and stacked insulators on the device performance of gate-all-around TFET for mobile computing applications Afreen Anamul Haque, Varun Mishra, Vikas Rathi, Chandni Tiwari, Yogesh Kumar Verma, Neha Belwal Aip Conference Proceedings, 2024 A comprehensive study on the behavior of gate-all-around (GAA) Tunnel Field Effect Transistors (TFET) with different dielectrics in single dielectric-based structure as well as stacking structure is reported. The gate-all-around structure is chosen so to have better gate control over the channel ensuing better characteristics of the device for the analog parameters investigated. To get the full benefit out of the device, the most optimized value of work-function is chosen. For single dielectrics-based GAA-TFETs, HfO2 outshines all the other dielectrics with ION of 4.34 µA and threshold voltage of 612mV. Furthermore, for the stacking structure, the duo of SiO2-HfO2 aces over the others with ION of 2.74 µA and threshold voltage of 613mV. Moreover, the low OFF-state current and sufficient drive current in stacked structure makes GAA-TFET a suitable contender for low power applications like mobile computing.
A PRBS Generator and Checker based BIST for Multipliers Jugal Kishore Bhandari, Yogesh Kumar Verma, Varun Mishra, Ankur Kumar, Santosh Kumar Gupta International Conference on Innovative Data Communication Technologies and Application Icidca 2023 Proceedings, 2023
Investigation of localized charges on linearity and distortion performance of ferroelectric dual material gate all around TFETs Electronics, Communication Engineering Department, Motilal Nehru National Institute of Technology, Allahabad, India, Varun Mishra, Yogesh Kumar Verma, Electronics, Communication Engineering Department, Motilal Nehru National Institute of Technology, Allahabad, India, Santosh Kumar Gupta, Electronics, Communication Engineering Department, Motilal Nehru National Institute of Technology, Allahabad, India Journal of Nano and Electronic Physics, 2019
Effect of Ionizing Radiation and Temperature on SiGe HBT Yogesh Kumar Verma, Varun Mishra, Prateek Kishor Verma, Santosh Kumar Gupta, Rajeev Kumar Chauhan 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical Electronics and Computer Engineering Upcon 2018, 2018
