Kalaivanan Loganathan
@kaust.edu.sa
PhD Student at Material Science and Engineering
King Abdullah University of Science and Technology (KAUST)
I am a scientist with 5+ years of interdisciplinary experience in the fields of mechanical, nanoscience, & materials engineering.
On the technical side, I am specialized in the design & fabrication of nano-electronic devices with extensive hands-on experience in electrical and radiofrequency measurements and thin film depositions.
I am well-versed in scientific writing, presentations, and strategic planning as evidenced by published 11 research articles, 2 US patents, 3 oral & 1 poster presentation in international conferences, and won the Young Researcher Award in 2020.
EDUCATION
Bachelor of Engineering (BE) in Mechanical Engineering
Masters of Technology (M.Tech) in Nanoscience and Technology
Doctor of Philosophy ( in Material Science and Engineering
RESEARCH INTERESTS
Kalaivanan Loganathan currently does research in Materials Engineering and device fabrication. His project focuses on simple, scalable and large-area nanogap lithography known as adhesion lithography where the metal electrodes are separated by a nanogap (< 20 nm) between them.
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Emre Yarali, Jehad K. El-Demellawi, Hendrik Faber, Dipti Naphade, Yuanbao Lin, Kalaivanan Loganathan, Wejdan S. Alghamdi, Xiangming Xu, Atteq ur Rehman, Erkan Aydin,et al.
American Chemical Society (ACS)
Luis Portilla, Kalaivanan Loganathan, Hendrik Faber, Aline Eid, Jimmy G. D. Hester, Manos M. Tentzeris, Marco Fattori, Eugenio Cantatore, Chen Jiang, Arokia Nathan,et al.
Springer Science and Business Media LLC
Luis Portilla, Kalaivanan Loganathan, Hendrik Faber, Aline Eid, Jimmy G. D. Hester, Manos M. Tentzeris, Marco Fattori, Eugenio Cantatore, Chen Jiang, Arokia Nathan,et al.
Springer Science and Business Media LLC
Kalaivanan Loganathan, Hendrik Faber, Emre Yengel, Akmaral Seitkhan, Azamat Bakytbekov, Emre Yarali, Begimai Adilbekova, Afnan AlBatati, Yuanbao Lin, Zainab Felemban,et al.
Springer Science and Business Media LLC
AbstractThe massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of >100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.
Kalaivanan Loganathan, Alberto D. Scaccabarozzi, Hendrik Faber, Federico Ferrari, Zhanibek Bizak, Emre Yengel, Dipti R. Naphade, Murali Gedda, Qiao He, Olga Solomeshch,et al.
Wiley
The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self‐aligned asymmetric nanogap electrodes (≈25 nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C16IDT‐BT is used, as the high hole mobility polymer, and the impact of p‐doping on the diode performance is studied. Pristine C16IDT‐BT‐based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC) of >100 and 6 GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2 pF). Doping of C16IDT‐BT with the molecular p‐dopant C60F48 improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ≈14 GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large‐area RF electronics of the future.
Viktoras Kabitakis, Emmanouil Gagaoudakis, Marilena Moschogiannaki, George Kiriakidis, Akmaral Seitkhan, Yuliar Firdaus, Hendrik Faber, Emre Yengel, Kalaivanan Loganathan, George Deligeorgis,et al.
Wiley
Hydrogen is attractive as an abundant source for clean and renewable energy. However, due to its highly flammable nature in a range of concentrations, the need for reliable and sensitive sensor/monitoring technologies has become acute. Here a solid‐state hydrogen sensor based on solution‐processable p‐type semiconductor copper thiocyanate (CuSCN) is developed and studied. Sensors incorporating interdigitated electrodes made of noble metals (gold, platinum, palladium) show excellent response to hydrogen concentration down to 200 ppm while simultaneously being able to operate reversibly at room temperature and at low power. Sensors incorporating Pd electrodes show the highest signal response of 179% with a response time of ≈400 s upon exposure to 1000 ppm of hydrogen gas. The experimental findings are corroborated by density functional theory calculations, which highlight the role of atomic hydrogen species created upon interaction with the noble metal electrode as the origin for the increased p‐type conductivity of CuSCN during exposure. The work highlights CuSCN as a promising sensing element for low‐power, all‐solid‐state printed hydrogen sensors.
I. Kathir, Santaji Krishna Shinde, C. Parswajinan, Sudheer Hanumanthakari, K. Loganathan, S. Madhavarao, A. H. Seikh, M. H. Siddique, and Manikandan Ganesan
Hindawi Limited
Single-junction polymer solar cells have demonstrated exceptional power conversion efficiency. Interlayer adhesion will be critical in building flexible polymer solar cells since inorganic conveyance layers would surely break. Aluminium-doped zinc oxide modified by polydopamine has emerged as a viable electron transportation layer in polymer solar cells, enhancing mechanical qualities by offering a high degree of flexibility and adhesion to the active layer. Power conversion efficiency of 12.7% is achieved in nonfullerene polymer solar cells built on PBDB-T2F:IT-4F with aluminium-doped zinc oxide 1.5% polydopamine electron transporting layer. Furthermore, the device based on Ag-mesh wire-wound electrodes has a power conversion efficiency of 11.5% and retains more than 90% of original power conversion efficiency afterward 1500 cycles of bending. For implantable and adaptable polymer solar cells for wide areas, roll-to-roll fabrication of inorganic electron transport layers is advantageous because of their mechanical resilience and thickness insensitivity.
K. Loganathan, S. Hariram, C. Devanathan, R. Giri, and S. Kumar
Elsevier BV
K Sivakumar, J.V Sai Prasanna Kumar, K Loganathan, V Mugendiran, T Maridurai, and K Suresh
Springer Science and Business Media LLC
Chun Ma, Hu Chen, Emre Yengel, Hendrik Faber, Jafar I. Khan, Ming-Chun Tang, Ruipeng Li, Kalaivanan Loganathan, Yuanbao Lin, Weimin Zhang,et al.
American Chemical Society (ACS)
Neuromorphic computing has the potential to address the inherent limitations of conventional integrated circuit technology, ranging from perception, pattern recognition, to memory and decision-making ( Acc. Chem. Res. 2019, 52 (4), 964-974) ( Nature 2004, 431 (7010), 796-803) ( Nat. Nanotechnol. 2013, 8 (1), 13-24). Despite their low power consumption ( Nano Lett. 2016, 16 (11), 6724-6732), traditional two-terminal memristors can perform only a single function while lacking heterosynaptic plasticity ( Nanotechnology 2013, 24 (38), 382001). Inspired by the unconditioned reflex, multiterminal memristive transistors (memtransistor) were developed to realize complex functions, such as multiterminal modulation and heterosynaptic plasticity ( Nature 2018, 554, (7693), 500-504). Here we combine a hybrid metal halide perovskite with an organic conjugated polymer to form heterojunction transistors that are responsive to both electrical and optical stimuli. We show that the synergistic effects of photoinduced ion migration in the perovskite and electronic transport in the polymer layers can be exploited to realize memristive functions. The device combines reversible, nonvolatile conductance modulation with large switching current ratios, high endurance, and long retention times. Using in situ scanning Kelvin probe microscopy and variable-temperature charge transport measurement, we correlate the collective effects of bias-induced and photoinduced ion migration with the heterosynaptic behavior observed in this hybrid memtransistor. The hybrid heterojunction channel concept is expected to be applicable to other material combinations making it a promising platform for deployment in innovative neuromorphic devices of the future.
Yuanbao Lin, Artiom Magomedov, Yuliar Firdaus, Dimitris Kaltsas, Abdulrahman El‐Labban, Hendrik Faber, Dipti R. Naphade, Emre Yengel, Xiaopeng Zheng, Emre Yarali,et al.
Wiley
Self-assembled monolayers (SAMs) based on Br-2PACz and MeO-2PACz molecules are investigated as hole-extracting interlayers in organic photovoltaics (OPVs). The highest occupied molecular orbital (HOMO) energies of these SAMs were measured at -6.01 and -5.30 eV for Br-2PACz and MeO-2PACz, respectively, and found to induce significant changes in the work function (WF) of indium-tin-oxide (ITO) electrodes upon chemical functionalization. OPV cells based on PM6:BTP-eC9:PC 71 BM using ITO/Br-2PACz anodes exhibit a maximum power conversion efficiency (PCE) of 18.4%, outperforming devices with ITO/MeO-2PACz (14.5%) and ITO/PEDOT:PSS (17.5%). The higher PCE is found to originate from the much higher WF of ITO/Br-2PACz (-5.81 eV) compared to ITO/MeO-2PACz (4.58 eV) and ITO/PEDOT:PSS (4.9 eV), resulting in lower interface resistance, improved hole transport/extraction, lower trap-assisted recombination, and longer carrier lifetimes. Importantly, the ITO/Br-2PACz electrode is chemically stable and after removal of the SAM it can be recycled and reused to construct fresh OPVs with equally impressive performance.
Dimitra G. Georgiadou, James Semple, Abhay A. Sagade, Henrik Forstén, Pekka Rantakari, Yen-Hung Lin, Feras Alkhalil, Akmaral Seitkhan, Kalaivanan Loganathan, Hendrik Faber,et al.
Springer Science and Business Media LLC
Emre Yarali, Hendrik Faber, Emre Yengel, Akmaral Seitkhan, Kalaivanan Loganathan, George T. Harrison, Begimai Adilbekova, Yuanbao Lin, Chun Ma, Yuliar Firdaus,et al.
Wiley
Solution‐processed metal oxide thin‐film transistors (TFTs) represent a promising technology for applications in existing but also emerging large‐area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al2O3/ZrO2 and In2O3/ZnO bilayers acting as the high‐k dielectric and electron‐transporting channel, respectively is described. Sequential solution‐phase deposition and photonic processing lead to low substrate temperature (<200 °C) while minimizing the overall process time to less than 60 s without compromising the quality of the formed layers. The bilayer Al2O3/ZrO2 dielectric exhibits low leakage current density (10−6 A cm−2 at 1 MV cm−1), high geometric capacitance (≈120 nF cm−2) and breakdown electric field of ≈1 MV cm−1. Combining Al2O3/ZrO2 with a photonically converted In2O3/ZnO heterojunction channels, results in TFTs with high electron mobility (19 cm2 V−1 s−1), low operation voltage (≤2 V), high current on/off ratio (>106), and low subthreshold swing (108 mV dec−1), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all‐photonic processed metal oxide electronics.
Manasvi Kumar, Dimitra G. Georgiadou, Akmaral Seitkhan, Kalaivanan Loganathan, Emre Yengel, Hendrik Faber, Dipti Naphade, Aniruddha Basu, Thomas D. Anthopoulos, and Kamal Asadi
Wiley
Ferroelectric tunnel junctions (FTJs) are ideal resistance‐switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current‐voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography‐based device fabrication method that would allow for their mass production. Co‐planar FTJs that are fabricated using wafer‐scale adhesion lithography technique are demonstrated, and a bi‐stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], and employ asymmetric co‐planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography‐based nano‐patterning technique and could pave the way to new and exciting memory device concepts.
Somak Mitra, Yusin Pak, Naresh Alaal, Mohamed N. Hedhili, Dhaifallah R. Almalawi, Norah Alwadai, Kalaivanan Loganathan, Yogeenath Kumarasan, Namsoo Lim, Gun Y. Jung,et al.
Wiley
Wide bandgap semiconductor (WBGS)‐based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p‐type WBGS that operates in the DUV region (<300 nm) presently exists. Here, solution‐processed p‐type manganese oxide WBGS quantum dots (MnO QDs) are explored. Highly crystalline MnO QDs are synthesized via femtosecond‐laser ablation in liquid. The p‐type nature of these QDs is demonstrated by Kelvin probe and field effect transistor measurements, along with density functional theory calculations. As proof of concept, a high‐performance, self‐powered, and solar‐blind Schottky DUV photodetector based on such QDs is fabricated, which is capable of detecting under ambient conditions. The carrier collection efficiency is enhanced by asymmetric electrode structure, leading to high responsivity. This novel p‐type MnO QD material can lead to cost‐effective industrial production of high‐performance solution‐processed DUV optoelectronics for large‐scale applications.
Somak Mitra, Assa Aravindh, Gobind Das, Yusin Pak, Idris Ajia, Kalaivanan Loganathan, Enzo Di Fabrizio, and Iman S. Roqan
Elsevier BV
Yusin Pak, Woojin Park, Somak Mitra, Assa Aravindh Sasikala Devi, Kalaivanan Loganathan, Yogeenth Kumaresan, Yonghun Kim, Byungjin Cho, Gun-Young Jung, Muhammad M. Hussain,et al.
Wiley
2D molybdenum disulfide (MoS2 ) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2 /SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.
RECENT SCHOLAR PUBLICATIONS
MOST CITED SCHOLAR PUBLICATIONS
GRANT DETAILS
Large Area Nano-structured Electronics for Energy Harvesting (LANE): CRG/KAUST/2019. Budget: 1.5 Million USD.
Jan 2019 - PresentJan 2019 - Present
Demonstration of a universal WEH technology that is able to operate up to 30 GHz, i.e. within the 5th generation wireless systems (5G) frequency bands, while taking full advantage of the scalable, large-area adhesion lithography & Nano-Imprint Lithography (NIL) techniques. Demonstration of a universal WEH technology that is able to operate up to 30 GHz, i.e. within the 5th generation wireless systems (5G) frequency bands, while taking full advantage of the scalable, large-area adhesion lithography & Nano-Imprint Lithography (NIL) techniques.
Large-Scale Electronics Manufactured With Light (LASEMAL): CRG/KAUST/2021. Budget: 1.5 million USDLarge-Scale Electronics Manufactured With Light (LASEMAL): CRG/KAUST/2021. Budget: 1.5 million USD
Jan 2021 - PresentJan 2021 - Present
LASEMAL aims to combine a gamut of solution-processable inorganic materials with innovative light-based processing techniques and circumvent traditional energy-demanding manufacturing.
RESEARCH OUTPUTS (PATENTS, SOFTWARE, PUBLICATIONS, PRODUCTS)
US Patents:
Methods For Producing Nanoscale PatternsMethods For Producing Nanoscale Patterns
Filed Mar 25, 2020Filed Mar 25, 2020
Self-Forming Nanogap Method And DeviceSelf-Forming Nanogap Method And Device
Filed Mar 24, 2020
Industry, Institute, or Organisation Collaboration
Member of Materials Research Society (MRS)
Member of Society of Photo-Optical Instrumentation Engineers (SPIE)
Member of Global Engineering Network (GEN)