Dr.R.S.Venkatesan

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Asst.Professor(SG)/ECE
Dr.Mahalingam college of Engineering and Technology, Pollachi

Dr.R.S.Venkatesan


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https://researchid.co/venkatesan

EDUCATION

CMOS VLSI design), M.E.(Embedded System Technologies), B.E.(Electronics and Communication Engineering)

RESEARCH INTERESTS

Analog and Digital VLSI, Communication
8

Scopus Publications

97

Scholar Citations

3

Scholar h-index

1

Scholar i10-index

Scopus Publications

  • Performance Investigation of an L-Shaped Tunneling Gate TFET Photodetector for Near-Infrared Detection
    Gali Madhavi, Chakradhar Adupa, Ramkumar Natarajan, Anil Kumar Pathakamuri, R. S. Venkatesan
    Physics of the Solid State, 2026
    This study introduces an innovative photodetector device that integrates an L-shaped top gate with a photosensitive back gate (LTG-PBG-TFET), specifically engineered to detect incident light within the near-infrared (NIR) wavelength range of 750–1050 nm. The LTG-PBG-TFET design leverages the advantages of both the L-shaped top gate and the photosensitive bottom gate to extend the edge tunneling zone at the channel/source (C/S) junction. This structural configuration enhances the photocurrent (Ilight) response, subthreshold swing (SSavg), and turn-ON voltage (Vth) under illumination. Furthermore, the slight elevation near the gate corner minimizes corner effects at the source/channel interface, which in turn improves Ilight/Idark performance as the illumination wavelength (λ) transitions from 1050 to 750 nm. Consequently, notable enhancements in Ilight, SSavg, and the Ilight/Idark ratio were observed, yielding a high spectral sensitivity (Sn) of approximately 54.4 and a signal-to-noise ratio (SNR) of about 82.2 for the proposed LTG-PBG-TFET device. Additionally, incorporating a light exposure window in the back gate region increases the active area for electron-hole pair (EHP) generation, thereby enhancing quantum efficiency (η) and responsivity (R), particularly at longer wavelengths around 1050 nm. Finally, the influence of acceptor–donor trap charges at the semiconductor/oxide interface on the Sn of the device was examined. Results indicate that Sn remains relatively stable as the wavelength (λ) is tuned between 750 and 1050 nm.
  • Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
    P. Gowtham, R. S. Venkatesan, T. Subhashini, M. Saravanan, A. Lakshmi Narayana
    Semiconductors, 2026
    Abstract This study presents a quantitative comparison of GaN-based high electron mobility transistors (HEMTs) employing InAlGaN and AlGaN barrier layers, focusing on DC, RF, and capacitance characteristics. The InAlGaN-based HEMT achieves a maximum drain current exceeding 2.0 A/mm at VDS = 10 V, whereas the AlGaN-based HEMT device delivers 1.6 A/mm under the same bias. The threshold voltage shifts from approximately –5 V for AlGaN to –6 V for InAlGaN HEMTs. Peak transconductance (gm) improves from 0.2 to 0.3 mS/mm, resulting in an increase in unity current-gain cut-off frequency (fT) from 15 to 18 GHz. Capacitance analysis shows maximum CGD values of 1.8 × 10–12 F/mm (AlGaN-based HEMT) and 2.0 × 10–12 F/mm (InAlGaN-based HEMT), while CGS increases from just below 2.0 × 10–12 to 2.5 × 10–12 F/mm. Both devices exhibit off-state leakage currents below 10–13 A/mm; however, the InAlGaN HEMT supports a superior breakdown voltage of ~870 V, compared to ~700 V for AlGaN HEMT device. These results demonstrate that InAlGaN barriers significantly enhance current drive, RF performance, and breakdown robustness of the HEMT devices.
  • Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics
    R. S. Venkatesan, M. Maria Dominic Savio, Ramkumar Natarajan, P. Murugapandiyan
    Journal of the Korean Physical Society, 2025
  • Enhancing IoT-Edge Security with Deep Learning a Real-Time Intrusion Detection Framework Using UMAP and LightBGM
    S. Hariprasad, B. Vamsy Krishna, Subhashini Tata, Ramkumar Natarajan, R. S. Venkatesan
    2nd International Conference on Cognitive Green and Ubiquitous Computing IC Cgu 2025, 2025
  • Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications
    R. S. Venkatesan, Rajeswari Manickam, Brindha Duraipandi, Krishnapriya Kottakkal Sugathan
    Journal of Electronic Materials, 2024
  • Design of high efficient low power static logic circuit using SG FinFET
    Venkatesan Rameya Sridharan, Manjunathan Alagarsamy, Balamurugan Rajangam, Lalitha Sekar
    International Journal of Electronics, 2024
    The increasing demand of integration density improvement and battery-powered device efficiency reduced complementary metal-oxide semiconductor (CMOS) technology node. In the technology of CMOS, the components are mainly affected with leakage power, dynamic switching power, short circuit power, gate oxide tunneling leakage current, sub threshold leakage current, and so on. To reduce the above limitations, design of high efficient low power static logic circuit using shorted-gate (SG) fin field-effect transistor (FinFET) based INput DEPendent (INDEP) in 22 nm CMOS technology (SLC-SG-FinFET-INDEP-22 nm CMOS) approach is proposed in this manuscript. The better selection of inputs to proposed INDEP FinFETs model is used for reducing leakage power. The efficiency of the proposed SLC-SG-FinFET-INDEP-22 nm CMOS technique is analysed using delay, power, power delay product, and stability analysis using noise margin. Thus, the proposed SLC-SG-FinFET-INDEP-22 nm CMOS has attained 21.31%, 41.47% and 12.7% lower delay, 20.87%, 34.5% and 22.41% lower power and 4.5%, 25.7% and 32.11% higher speed than existing methods static logic circuit input-controlled leakage restrainer transistor in 22 nm CMOS (SLC-ICLRT-22 nm CMOS), static logic circuit using self-control leakage-suppression block in 22 nm CMOS technology (SLC-SCLSB-22 nm CMOS), and static logic circuit using computational digital low dropout in 22 nm CMOS technology (SLC-CDLDO-22 nm CMOS) methods, respectively.
  • FPGA-Based System for Real-time Epileptic Seizure Detection using KNN Classifier
    G Jaffino, J Prabin Jose, R Raman, R S Venkatesan, V.P.M.B. Aarthi
    2023 2nd International Conference on Electrical Electronics Information and Communication Technologies Iceeict 2023, 2023
    Epileptic seizure detection is a crucial task in the field of biomedical signal processing. Seizures are abnormal electrical discharges in the brain that can lead to various symptoms, such as convulsions, loss of consciousness, and cognitive impairment. People with epilepsy experience repeated seizures that happen suddenly and without warning. More than 70 million people worldwide suffer from epileptic seizure illness. Health professionals examine and identify the epilepsy in electroencephalography (EEG) signal using visual perception. The real time visual analysis of EEG signal is tough and challenging process. Therefore, it is essential to identify seizure event in EEG signal using a real time system in order to prevent patient from unexpected death. In this work Parks-McClellan algorithm was used to design the finite impulse response (FIR) filters, which can be used to remove the noise present in the EEG signals. The preprocessed signal is modelled using proposed weighted moving average model. From the modelled signal the features such as mobility feature, Fluctuation index and weighted spectral entropy features are extracted. The K nearest neighbor classifier is used to classify the seizure and normal EEG signal based on the extracted features. The system that has been developed employs the utilization of the Xilinx System Generator methodology on the Zynq-7000 fully programmable SOC (System-on-a-Chip) platform. This approach enables the implementation of a fully customizable and flexible system, utilizing the inherent capabilities of the SOC and the System Generator tool. Furthermore, the use of the Zynq-7000 platform enables integration of both hardware and software components, providing a more efficient and powerful solution.
  • A design approach to smart health monitoring using android mobile devices
    K. Mathan Kumar, R.S. Venkatesan
    Proceedings of 2014 IEEE International Conference on Advanced Communication Control and Computing Technologies Icaccct 2014, 2015
    This project deals with a new reliable health monitoring system designed for affordable low cost wireless patient monitoring system. The patient monitoring and patient care is one of the major fields which lack proper technology in rural India hospital and homes. The main cause of patient death in many parts in India is mainly due to lack of critical health care devices for monitoring the patient. This is due to 4'A's- Affordability, Accessibility, Awareness and Availability. So this project deals with monitoring of the patient through wireless technology. The monitoring signals are finally obtained in Pc and Android mobile devices. A visualization module of the server program graphically displays the recorded biomedical signals on Android mobile devices used by patients and doctors at the end of the networks in real-time. Our approach is affordable for global health care solution is managed to process the large amount of biomedical signals through wireless body area network and mobile technology for daily lifestyle to users efficiently.

RECENT SCHOLAR PUBLICATIONS

  • Performance investigation of an l-shaped tunneling gate tfet photodetector for near-infrared detection
    G Madhavi, C Adupa, R Natarajan, AK Pathakamuri, RS Venkatesan
    Physics of the Solid State 68 (3), 260-270 , 2026
    2026
    Citations: 2
  • Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
    P Gowtham, RS Venkatesan, T Subhashini, M Saravanan, AL Narayana
    Semiconductors 60 (3), 263-275 , 2026
    2026
  • Device for Analysis and Monitoring Cyber Crime
    MSMPMVKADRSVMKSKMHMLMPGD Dinesh S
    IN Patent 475941-001 , 2026
    2026
  • Enhancing IoT-Edge Security with Deep Learning a Real-Time Intrusion Detection Framework Using UMAP and LightBGM
    S Hariprasad, BV Krishna, S Tata, R Natarajan, RS Venkatesan
    2025 International Conference on Cognitive, Green and Ubiquitous Computing … , 2025
    2025
    Citations: 1
  • Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics
    RS Venkatesan, MMD Savio, R Natarajan, P Murugapandiyan
    Journal of the Korean Physical Society 86 (10), 989-1002 , 2025
    2025
    Citations: 3
  • Performance Analysis of AlN/GaN HEMTs on β-Ga 2 O 3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications
    RS Venkatesan, R Manickam, B Duraipandi, KK Sugathan
    Journal of Electronic Materials 53 (7), 3887-3900 , 2024
    2024
    Citations: 4
  • Design of high efficient low power static logic circuit using SG FinFET
    V Rameya Sridharan, M Alagarsamy, B Rajangam, L Sekar
    International Journal of Electronics, 1-18 , 2023
    2023
  • FPGA-based system for real-time epileptic seizure detection using KNN classifier
    G Jaffino, JP Jose, R Raman, RS Venkatesan, V Aarthi
    2023 Second International Conference on Electrical, Electronics, Information … , 2023
    2023
    Citations: 6
  • VLSI DESIGN
    M Buradkar, RS Venkatesan
    GCS PUBLISHERS , 2022
    2022
  • Compact Planner antenna for high-speed communication
    DDA Raja, DRS Venkatesan
    IN Patent 202,241,001 , 2022
    2022
  • Analysis of Low Power Consumption In Subtractor Circuits Using Tanner By GDI (Gate Diffusion Input) Technique
    RS Venkatesan
    National Conference on Signal Processing & Communication Technologies , 2021
    2021
  • Wireless Audio Transmission Using NI Labview and USRP
    RS Venkatesan
    National Conference on Signal Processing & Communication Technologies , 2021
    2021
  • Analysis of Power Consumption in Various Adders and Multipliers by GDI Technique using Microwind
    RS Venkatesan
    7th International Conference on Emerging Trends in Engineering and Technology , 2020
    2020
  • Analysis of power consumption in various adders using microwind
    RS Venkatesan
    National Conference on Smart Computing and Advanced Communication 2019 , 2019
    2019
  • ANALYSIS OF STANDBY LEAKAGE POWER REDUCTION BY V BODY CONTROL SYSTEM FOR CORE DEVICES
    RS Venkatesan, AV RamPrasad
    Journal of Electrical Engineering 19 (5), 17-17 , 2019
    2019
    Citations: 1
  • Analysis of standby leakage power reduction by v body control system for core devices [articol]
    RS Venkatesan, AV Ram Prasad
    Timișoara: Editura Politehnica , 2019
    2019
  • FPGA Implementation and Testing of Inter-IC Bus protocol for interfacing EEPROM
    RS Venkatesan
    International Journal of Advanced Research Trends in Engineering and Technology , 2018
    2018
  • Implementation of ‘VIRTOS’ using Projector and a Camera
    RS Venkatesan
    International Journal of Advanced Research Trends in Engineering and Technology , 2017
    2017
  • Analysis of Power consumption in CMOS circuits using Microwind
    RS Venkatesan, AV RamPrasad
    International Journal of Printing, Packaging & Allied Sciences 4 (5), 3033-3053 , 2016
    2016
  • A design approach to smart health monitoring using android mobile devices
    KM Kumar, RS Venkatesan
    2014 IEEE International Conference on advanced communications, control and … , 2014
    2014
    Citations: 80

MOST CITED SCHOLAR PUBLICATIONS

  • A design approach to smart health monitoring using android mobile devices
    KM Kumar, RS Venkatesan
    2014 IEEE International Conference on advanced communications, control and … , 2014
    2014
    Citations: 80
  • FPGA-based system for real-time epileptic seizure detection using KNN classifier
    G Jaffino, JP Jose, R Raman, RS Venkatesan, V Aarthi
    2023 Second International Conference on Electrical, Electronics, Information … , 2023
    2023
    Citations: 6
  • Performance Analysis of AlN/GaN HEMTs on β-Ga 2 O 3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications
    RS Venkatesan, R Manickam, B Duraipandi, KK Sugathan
    Journal of Electronic Materials 53 (7), 3887-3900 , 2024
    2024
    Citations: 4
  • Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics
    RS Venkatesan, MMD Savio, R Natarajan, P Murugapandiyan
    Journal of the Korean Physical Society 86 (10), 989-1002 , 2025
    2025
    Citations: 3
  • Performance investigation of an l-shaped tunneling gate tfet photodetector for near-infrared detection
    G Madhavi, C Adupa, R Natarajan, AK Pathakamuri, RS Venkatesan
    Physics of the Solid State 68 (3), 260-270 , 2026
    2026
    Citations: 2
  • Enhancing IoT-Edge Security with Deep Learning a Real-Time Intrusion Detection Framework Using UMAP and LightBGM
    S Hariprasad, BV Krishna, S Tata, R Natarajan, RS Venkatesan
    2025 International Conference on Cognitive, Green and Ubiquitous Computing … , 2025
    2025
    Citations: 1
  • ANALYSIS OF STANDBY LEAKAGE POWER REDUCTION BY V BODY CONTROL SYSTEM FOR CORE DEVICES
    RS Venkatesan, AV RamPrasad
    Journal of Electrical Engineering 19 (5), 17-17 , 2019
    2019
    Citations: 1
  • Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
    P Gowtham, RS Venkatesan, T Subhashini, M Saravanan, AL Narayana
    Semiconductors 60 (3), 263-275 , 2026
    2026
  • Device for Analysis and Monitoring Cyber Crime
    MSMPMVKADRSVMKSKMHMLMPGD Dinesh S
    IN Patent 475941-001 , 2026
    2026
  • Design of high efficient low power static logic circuit using SG FinFET
    V Rameya Sridharan, M Alagarsamy, B Rajangam, L Sekar
    International Journal of Electronics, 1-18 , 2023
    2023
  • VLSI DESIGN
    M Buradkar, RS Venkatesan
    GCS PUBLISHERS , 2022
    2022
  • Compact Planner antenna for high-speed communication
    DDA Raja, DRS Venkatesan
    IN Patent 202,241,001 , 2022
    2022
  • Analysis of Low Power Consumption In Subtractor Circuits Using Tanner By GDI (Gate Diffusion Input) Technique
    RS Venkatesan
    National Conference on Signal Processing & Communication Technologies , 2021
    2021
  • Wireless Audio Transmission Using NI Labview and USRP
    RS Venkatesan
    National Conference on Signal Processing & Communication Technologies , 2021
    2021
  • Analysis of Power Consumption in Various Adders and Multipliers by GDI Technique using Microwind
    RS Venkatesan
    7th International Conference on Emerging Trends in Engineering and Technology , 2020
    2020
  • Analysis of power consumption in various adders using microwind
    RS Venkatesan
    National Conference on Smart Computing and Advanced Communication 2019 , 2019
    2019
  • Analysis of standby leakage power reduction by v body control system for core devices [articol]
    RS Venkatesan, AV Ram Prasad
    Timișoara: Editura Politehnica , 2019
    2019
  • FPGA Implementation and Testing of Inter-IC Bus protocol for interfacing EEPROM
    RS Venkatesan
    International Journal of Advanced Research Trends in Engineering and Technology , 2018
    2018
  • Implementation of ‘VIRTOS’ using Projector and a Camera
    RS Venkatesan
    International Journal of Advanced Research Trends in Engineering and Technology , 2017
    2017
  • Analysis of Power consumption in CMOS circuits using Microwind
    RS Venkatesan, AV RamPrasad
    International Journal of Printing, Packaging & Allied Sciences 4 (5), 3033-3053 , 2016
    2016

RESEARCH OUTPUTS (PATENTS, SOFTWARE, PUBLICATIONS, PRODUCTS)

One Patent filed and Published on :04.02.2022 (Application Number:202241001139)-"Compact Planner antenna for high speed communication"