ARUN VIGNESH N

@griet.ac.in

Department of ECE
Gokaraju Rangaraju Institute of Engineering and Technology

68

Scopus Publications

Scopus Publications

  • Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications
    Santosh Kumar Tallapalli, V. Vijayakumar, N. Arun Vignesh, and Asisa Kumar Panigrahy

    Springer Science and Business Media LLC

  • Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime
    Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M,et al.

    Institute of Electrical and Electronics Engineers (IEEE)
    This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO<sub>2</sub> and HfO<sub>2</sub>, each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which measures the <italic>I<sub>ON</sub></italic>, <italic>I<sub>OFF</sub></italic>, <italic>I<sub>ON</sub>/ I<sub>OFF</sub></italic>, threshold voltage, DIBL, gain parameters (g<sub>m</sub>, g<sub>d</sub>, A<sub>v</sub>), gate capacitance, and cut-off frequency (<italic>f<sub>T</sub></italic>). The device is suited for applications needing rapid switching since it has a low gate capacitance of the order of 10<sup>–18</sup>, according to the simulation results. A transconductance (g<sub>m</sub>) value of 21 µS and an impressive cut-off frequency of 9.03 GHz are displayed during device analysis. A detailed investigation has also been done into the P-type device response for the same device. Finally, the proposed GAA nanosheet device is used in the inverter model. The NSFET-based inverter, although having higher gate capacitance, has the shortest propagation latency.

  • A Faster and Robust Artificial Neural Network Based Image Encryption Technique With Improved SSIM
    Asisa Kumar Panigrahy, Shima Ramesh Maniyath, Mithileysh Sathiyanarayanan, Mohan Dholvan, T. Ramaswamy, Sudheer Hanumanthakari, N. Arun Vignesh, S. Kanithan, and Raghunandan Swain

    Institute of Electrical and Electronics Engineers (IEEE)
    A robust image encryption process is still one of the most challenging tasks in image security owing to massive degree and sensitivity nature of information in the form of pixels. The hurdles include greater computational difficulty, information loss during encryption, universality, applicability of the approach, and less scalability. Many image encryption methods existing in literature merely encrypt a portion of the data. Therefore, we propose a robust, dynamic, and sophisticated technique to enhance the encryption process to make it difficult for an attacker to gain unauthorized access to the pixel data. The proposed system uses a novel analytical research methodology through dynamically harnessing the potential of neural network that offers better forward and backward secrecy, dynamic control, and automatic management unlike any existing system. The encryption procedure comprises of two levels, first level is confusion- permutation of input image and second level is diffusion by Bit XOR operation for secure transmission and storage of images. Finally, the encrypted image is used as a target for training the Artificial Neural Network (ANN) model. ANN trained values are used for final level of encryption to develop a Neural Network (NN)-based cryptosystem, where the crypto analyst or the cracker need to know the number of adaptive iterations and the final weights for the encryption and decryption systems to crack the system which offers higher degree of resiliency towards potential threats. Results and security analysis show that our algorithm has good encryption effect, ability of resisting exhaustive attack, statistical attack, and differential attack. The system performance after implementing the proposed method is compared with existing methods present in literature with respect to processing time and Structural Similarity Index Measure (SSIM). Our proposed method offers significant reduction in encryption time and is approximately 10-15% faster than others with SSIM of 0.002165, close to zero after encryption. It also successfully balances the image quality with higher image security and lower computational complexity.

  • Soft Computing Approach To Prevent Derailments Due To Landslides
    S. Balambigai, P. V. Shreeram, J. Sureshkanna, S. Sasikala, S. Sowmika, and N. Arun Vignesh

    IEEE
    Our country has a large network of railways. There is about 115000 km of railway tracks in our country. The United Nations has the largest network of railways followed by China and India. Sometimes the tracks are laid between the mountains. In India about 420km of the railway tracks are laid across the mountains. There is a possibility for landslides in such hilly areas. These landslides can result in the derailment of the train which leads to the tragic accidents. Records show that about 70% of the rail derailments happen due to the landslides. Hence there is a necessity of detecting the landslides in prior to the tragic accidents. There is no existing system for detecting such landslides in prior nevertheless there are systems to detect the cracks in the railway track. But this system cannot detect the landslides in prior, hence a new system with these features added is required. The system proposed here focuses on predicting the landslides priorly and hence send the warning message to the nearby station and the engine driver. The fuzzy toolbox in MATLAB is used here for the simulation of this paper. The reasons for the landslides were studied and the possible measures of predicting the landslides are studied. This paper briefly elaborates the methods involved in the prediction of the landslides occurrence and thereby warn the concerned personnel. The proposed system is 81.9% accurate.

  • Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications
    Ravi Kumar, E. Sathish Kumar, S. Vijayalakshmi, Dumpa Prasad, A. Mohamedyaseen, Shruti Bhargava Choubey, N. Arun Vignesh, and A. Johnson Santhosh

    Hindawi Limited
    Self-heating effects and short channel effects are unappealing side effects of multigate devices like gate-all-around nanowire-field-effect transistors (FETs) and fin FETs, limiting their performance and posing reliability difficulties. This paper proposes the use of the novel nanosheet FET (NsFET) for complementary metal-oxide semiconductor technology nodes that are changing. Design guidelines and basic measurements for the sub-nm node are displayed alongside a brief introduction to the roadmap to the sub-nm regime and electronic market. The device had an ION/IOFF ratio of more than 105, according to the proposed silicon-based NsFET. For low-power and high-switching applications, the results were verified and achieved quite well. When an NS width increases, although, the threshold voltage (Vth) tends to fall, resulting in a loss in subthreshold effectiveness. Furthermore, the proposed device performance, like subthreshold swing ION/IOFF, was studied with a conventional 2D FET. Hence, the proposed NsFET can be a frontrunner for ultra-low power and high-speed switching applications.

  • Design of Dual Band Body Area Network Antenna Using CST
    Randhi Harika, Manda Arun Raj, Saraswatula Karthikeya Anirudh, N. Arun Vignesh, and C. Gokul Prasad

    IEEE
    In this paper a wearable antenna is proposed for WBAN frequency range. The antenna is a dual band button with a diameter 14.52 mm integrating a patch on top of a dielectric section. The button is located on top of a fabric substrate and a conductive fabric ground that are to be incorporated in wearables. Computer simulation technology was used to create the entire topology. This antenna’s key peculiarity is that it emits two different radiation patterns: a monopole-type and broadside pattern for 2GHz and 5GHz band respectively. A scaled-down prototype has been created. The results and consequences of real-world applications are observed, quantified, and remarkably consistent with models.

  • Design and Analysis of Annular Slot Antenna with Monopole for WLAN using Computer Simulation Technology
    Thakur Rithika, Pathuri Sree Mahalakshmi, Brahmandlapally Anil, N. Arun Vignesh, and Balambigai Subramanian

    IEEE
    Antennas are fundamental for wireless communications. Portability, affordability, adaptability, and small size are essential for wireless communication antennas. This paper discusses the designing and analysis of an Annular Slot Antenna (ASA) with a monopole for Wireless LAN (WLAN) applications at 5. 8GHz frequency using Computer Simulation Technology (CST). The suggested antenna has a basic construction and is simple to build. A monopole and an annular slot antenna (ASA) are fitted into each other to form two quasi-omnidirectional radiators. A microstrip line supplies power to the monopole and the ASA. The performance of the designed antenna is analyzed on the grounds of voltage standing wave ratio (VSWR), S parameters, Return loss, and radiation patterns. Simulated outcomes from CST are presented.

  • Design and Analysis of M-Shaped Monopole Antenna for Bluetooth communications
    Andrews Jogu, Kakinada Leelavathi, Iruvuru Manogna, N Arun Vignesh, and Balambigai Subramanian

    IEEE
    The M-shaped monopole antenna is an antenna that has a reduced size for bluetooth and wireless communication. It is an integrated, portable, wideband antenna with a gain of 2dBi-5dBi and a frequency range of 0. SGHZ-2.45GHZ. A 0. 4mm substrate height and 4.4 relative dielectric constant was found to have a VSWR <3:1. The T-shaped groundplane is incorporated into the design at the price of bandwidth in order to further minimize size, which was chosen to represent the dimensions of a normal mobile phone. Two trapezoidal sections, a triangular part, and a rectangular section are combined to form the M shape of the Mshaped antenna. A 50$\\Omega$ feed line can be used as the impedance bandwidth is huge. Over the operational band, the radiation pattern is comparatively steady, producing an omnidirectional pattern. The antenna is a desired component for usage in a variety of mobile communication systems due to its small size and broad bandwidth.

  • Improving the Quality and performance of wireless Ad-hoc network by Using MMCN Architecture
    A Kalaiarasi., S Raja., N Kumareshan., M Pradeepa, N Arun Vignesh., and N Prakash.

    IEEE

  • Relating DT Framework in IOT based Heart Rate and Blood Oxygen Monitor with Automatic Data Saving
    C Gokul Prasad, W G Vipshal, O Leon, Ap Thamarai Kannan, B Sabarinathan, and N Arun Vignesh

    IEEE
    It might be challenging to monitor and keep tabs on a patient’s health when they are at home. Patient’s health state should be routinely assessed and reported to the relevant doctor so that any necessary emergency action can be taken, especially in the case of elderly patients. In this paper, we suggest a system that, monitors patient health with sensors and notifies a patient’s doctor or family members via the internet in case of an emergency. The strategy was created for people who don’t require emergency care but still require routine supervision from a physician or a family member. Utilizing a temperature and heartbeat sensor, our system keeps track of patient health. It primarily focuses on circumstances in which patients and doctors are separated by great distances and in which it is critical to provide all relevant patient information to the physician. The system promptly alerts the doctor about the patient’s status over an IOT device whenever it detects any abrupt changes, such as when the body temperature exceeds the set limit or when the heartbeat is irregular. The doctor can take the appropriate action based on the data received by the smart patient health monitoring system. The information that has been given to the doctor can be protected from outside interference by using block chain technology and smart contracts. This was incorporated and implemented with Design Thinking (DT).

  • Study of Various Word Vectors for Sentiment Analysis
    S. Madhusudhanan, N. M. Jyothi, A. Vishnukumar, S. Sathya, and N. Arun Vignesh

    Springer Nature Singapore

  • Vedic Multiplier for High-Speed Applications
    J. V. R. Sudhamsu Preetham, Perli Nethra, D. Chandrasekhar, Mathangi Akhila, N. Arun Vignesh, and Asisa Kumar Panigrahy

    Springer Nature Singapore

  • An Ensemble Sentiment Classification on Multidomain Dataset
    S. Madhusudhanan, N. M. Jyothi, A. Vishnukumar, S. Sathya, and N. Arun Vignesh

    Springer Nature Singapore

  • Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire
    A. Mohamedyaseen, P. Suresh Kumar, K. R. Kavitha, and N. A. Vignesh

    Springer Science and Business Media LLC

  • Structural Morphology and Optical Properties of Strontium-Doped Cobalt Aluminate Nanoparticles Synthesized by the Combustion Method
    Sivaraman Kanithan, Natarajan Arun Vignesh, Siva Baskar, Santhosh Nagaraja, Mohamed Abbas, Abdul Aabid, and Muneer Baig

    MDPI AG
    The study of structural morphology and the optical properties of nanoparticles produced by combustion methods are gaining significance due to their multifold applications. In this regard, in the present work, the strontium-doped cobalt aluminate nanoparticles were synthesized by utilizing Co1−xSrxAl2O4 (0 ≤ x ≤ 0.5) L-Alanine as a fuel in an ignition cycle. Subsequently, several characterization studies viz., X-ray diffraction (XRD), energy-dispersive X-ray (EDX) analysis, high-resolution scanning electron microscopy (HRSEM), Fourier transform infrared spectroscopy (FTIR), ultraviolet (UV) spectroscopy and vibrating sample magnetometry (VSM) were accomplished to study the properties of the materials. The XRD analysis confirmed the cubic spinel structure, and the average crystallite size was found to be in the range of 14 to 20 nm using the Debye–Scherrer equation. High-resolution scanning electron microscopy was utilized to inspect the morphology of the Co1−xSrxAl2O4 (0 ≤ x ≤ 0.5) nanoparticles. Further, EDS studies were accomplished to determine the chemical composition. Kubelka–Munk’s approach was used to determine the band gap, and the values were found to be in the range of 3.18–3.32 eV. The energy spectra for the nanoparticles were in the range of 560–1100 cm−1, which is due to the spinel structure of Sr-doped CoAl2O4 nanoparticles. The behavior plots of magnetic induction (M) against the magnetic (H) loops depict the ferromagnetic behavior of the nanomaterials synthesized.

  • Temperature Influence on Dielectric Tunnel FET Characterization and Subthreshold Characterization
    S. Kanithan, S. Anthoniraj, P. Manikandan, T. Ramaswamy, Ravi Kumar, N. Arun Vignesh, and Asisa Kumar Panigrahy

    Springer Science and Business Media LLC

  • Analysis and Design of Novel Doping Free Silicon Nanotube TFET with High-density Meshing Using ML for Sub Nanometre Technology Nodes
    Ravi Kumar, B. Aruna Devi, V. Sireesha, A. Kishore Reddy, I. Hariharan, E. Konguvel, and N. A Vignesh

    Springer Science and Business Media LLC

  • Optimal Design and Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor
    S. Anthoniraj, K. Saravanan, A. S. Vinay Raj, and N. A. Vignesh

    Springer Science and Business Media LLC

  • Enhanced optical, magnetic, and photocatalytic activity of Mg<sup>2+</sup> substituted NiFe<inf>2</inf>O<inf>4</inf> spinel nanoparticles
    S. Kanithan, N. Arun Vignesh, Khadijah Mohammedsaleh Katubi, Partha Sarathi Subudhi, Ekrem Yanmaz, Joshuva Arockia Dhanraj, Norah Salem Alsaiari, khamael M. Abualnaja, M. Sukumar, M. Sundararajan,et al.

    Elsevier BV

  • Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications
    S. Kanithan, N. Arun Vignesh, S. Jana, C. Gokul Prasad, E. Konguvel, and S. Vimalnath

    Springer Science and Business Media LLC

  • Design and Analysis of Junctionless FinFET with Gaussian Doped for Non-polar Structure
    E. Sathish Kumar, Suresh Kumar P, N. Arun Vignesh, and S. Kanithan

    Springer Science and Business Media LLC

  • Performance Analysis of Doping Less Nanotube Tunnel Field Effect Transistor for High Speed Applications
    S. Arun jayakar, T. Rajesh, N. A. Vignesh, and S. Kanithan

    Springer Science and Business Media LLC

  • Time Dependent Behaviour of Amino Silane-treated Aramid Fibre and Waste Latex Rubber Powder Toughened Epoxy Composite
    K. K. Arun, M. Bala Theja, L. Girisha, N. Arun Vignesh, N. S. Sivakumar, Ram Subbiah, and S. Kaliappan

    Springer Science and Business Media LLC

  • Performance Evaluation of FinFET Device Under Nanometer Regime for Ultra-low Power Applications
    M. Parimala Devi, Velnath Ravanan, S. Kanithan, and N. A. Vignesh

    Springer Science and Business Media LLC

  • A Study of an Ultrasensitive Label Free Silicon Nanowire FET Biosensor for Cardiac Troponin I Detection
    M. Durga Prakash, B. Vamsi Krsihna, B. V. V. Satyanarayana, N. Arun Vignesh, Asisa Kumar Panigrahy, and Shaik Ahmadsaidulu

    Springer Science and Business Media LLC