Rajneesh Chaurasiya

Scopus Publications

Bi2O2Se nanosheets for dual-mode electrochemical/fluorescence turn-off sensing of ferric ions
Amit Kumar Shringi, Rajeev Kumar, Rajneesh Chaurasiya, Justin Lin, Nutifafa Y. Doumon, et al.
Nanoscale, 2025
Schematic of a dual electrochemical and fluorescence turn-off sensor based on exfoliated Bi2O2Se nanosheets, enabling highly sensitive, selective, and real-time detection of Fe3+ ions.
Growth of single-crystalline 2D materials for advanced quantum sensing devices
Neeraj Goel, Aditya Kushwaha, Manasvi Raj, Aswin A, Rajneesh Chaurasiya, et al.
Applied Physics Reviews, 2025
In recent years, two-dimensional (2D) materials have received significant research interest for various potential applications, including quantum sensing, due to their distinct physicochemical properties. The 2D materials provide versatile platform for developing smart sensing devices by employing quantum mechanics beyond classical physics. Quantum sensing offers ultrasensitive detection of various physical quantities. Therefore, in this comprehensive review, we summarize the latest advancements in growth techniques of emerging 2D materials to make them suitable for developing scalable quantum sensing devices. First, we discuss the key 2D materials and associated quantum physics to get a glimpse of their suitability for different applications. Then, we discuss recent breakthroughs in the controlled growth of single crystal 2D materials with lesser defects and homogeneity. Consequently, we discuss the potential applications of quantum sensors in different fields. Finally, we highlight the challenges and limitations associated with the growth of high-quality 2D materials, including scalability, stability, and their integration with existing technology.
Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects
Rajneesh Chaurasiya, Shubham Tyagi, Abhijeet J. Kale, Goutam Kumar Gupta, Rajesh Kumar, et al.
Advanced Theory and Simulations, 2025
Janus transition metal dichalcogenides (JTMDs) have garnered significant interest from the scientific community owing to their remarkable physical and chemical features. The existence of intrinsic dipoles makes them different from conventional transition metal dichalcogenides. These properties are useful in various potential applications, including energy storage, energy generation, and other electronic devices. The JTMDs are considered a hot topic in two dimensional (2D) materials research, making it necessary to understand their fundamental properties and potential use in various applications. This review covers the fundamental difference between Janus and conventional transition metal dichalcogenide‐based 2D materials. This discussion encompasses the characteristics of monolayer, bilayer, and multilayer materials, focusing on their structural stability, electronics properties, optical properties, piezoelectricity, and Rashba effects. The impact of external stimuli such as strain and electric field toward engineering the ground state properties of monolayer JTMDs is discussed. Additionally, various potential applications of Janus monolayers, including gas sensors, catalysis, electrochemical energy storage, thermoelectric, solar cells, and field effect transistors, are highlighted, emphasizing enhancing their performance. Finally, the prospects of Janus 2D materials for next‐generation electronic devices are highlighted.
Substitutional doping of 2D transition metal dichalcogenides for device applications: Current status, challenges and prospects
Rajeev Kumar, Amit Kumar Shringi, Hannah Jane Wood, Ivy M. Asuo, Seda Oturak, et al.
Materials Science and Engineering R Reports, 2025
Unleashing the Potential of All-Perovskite Tandem Solar Cell Structures: A Hybrid DFT and Numerical Simulation Insights
Goutam Kumar Gupta, Debalina Roy Choudhury, Nilesh Kumar, Rajneesh Chaurasiya
IEEE Transactions on Nanotechnology, 2025
Formation of C2 and C3 hydrocarbons through photocatalytic CO2 conversion on vertical Bi2WO6 nanosheets
Chia-Ju Lee, Rajneesh Chaurasiya, Jen-Sue Chen, Jih-Jen Wu
Sustainable Materials and Technologies, 2024
Janus HfSSe monolayer: a promising candidate for SO2 and COCl2 gas sensing
Dalip Kumar, Rajesh Kumar, Rajneesh Chaurasiya
Nanotechnology, 2024
Janus monolayers based on transition metal dichalcogenides have garnered significant interest as potential materials for nano electronic device applications due to their exceptional physical and electronic properties. In this study, we investigate the stability of the Janus HfSSe monolayer using ab initio molecular dynamics simulations and analyze the electronic properties in its pristine state. We then examine the impact of adsorbing toxic gas molecules (AsH3, COCl2, NH3, NO2, and SO2) on the monolayer’s structure and electronic properties, testing their adsorption on different active sites on top of hafnium, selenium, and sulfur. The sensitivity of the gas molecules is quantified in terms of their adsorption energy, with the highest and lowest energies being observed for SO2 (−0.278 eV) and NO2 (−0.095 eV), respectively. Additionally, we calculate other properties such as recovery time, adsorption height, Bader charge, and charge difference density to determine the sensitivity and selectivity of the toxic gas molecules. Our findings suggest that the Janus HfSSe monolayer has the potential to function as SO2 and COCl2 gas sensor due to its high sensitivity for these two gases.
Exploring the Feasibility of Monoclinic-ZrO2-Based Memristors as Artificial Olfactory Sensors: An Atomistic Simulation Approach
Rajneesh Chaurasiya, Kuan‐Ting Chen, Li‐Chung Shih, Ya‐Chi Huang, Jen‐Sue Chen
Advanced Theory and Simulations, 2024
Memory devices with sensitivity, selectivity, and operation voltage towards the gases are rarely reported for artificial olfactory sensors. Additionally, there are no reports available on the atomistic aspects of artificial olfactory sensors. This study reports an atomistic simulation of monoclinic‐ZrO2 (m‐ZrO2). The impact of external electric field on the formation of the oxygen vacancies are evaluated by considering the different directions of electric field. Furthermore, it is conducted nudged elastic band calculations which showed a decrease in the migration barrier energy with an increase in the electric field for all considered directions. Moreover, it is simulated the memristor device (Ta/m‐ZrO2/Pt) and investigated the impact of oxygen vacancies on electrical conductivity by considering oxygen vacancies at different locations in m‐ZrO2. Finally, it is evaluated the possibility of using the m‐ZrO2 based memristor device for an artificial olfactory sensor by studying the gas sensing properties of the (111) surface of m‐ZrO2. The pristine structure exhibits low sensitivity towards toxic molecules (CO2, CO, NH3, and NO2), while the sensing performance is significantly enhanced on the oxygen vacancy rich surface. These atomistic simulation results provide an atomic level understanding of the Ta/m‐ZrO2/Pt device and suggest the potential for it to be use as an artificial olfactory sensor.
Quasicrystal Nanosheet/α-Fe2O3 Heterostructure-Based Low Power NO2 Sensors: Experimental and DFT Studies
Sumit Kumar, Mirabbos Hojamberdiev, Anyesha Chakraborty, Rahul Mitra, Rajneesh Chaurasiya, et al.
ACS Applied Materials and Interfaces, 2024
Industrial emissions, environmental monitoring, and medical fields have put forward huge demands for high-performance and low power consumption sensors. Two-dimensional quasicrystal (2D QC) nanosheets of metallic multicomponent Al70Co10Fe5Ni10Cu5 have emerged as a promising material for gas sensors due to their excellent catalytic and electronic properties. Herein, we demonstrate highly sensitive and selective NO2 sensors developed by low-cost and scalable fabrication techniques using 2D QC nanosheets and α-Fe2O3 nanoparticles. The sensitivity (ΔR/R%) of the optimal amount of 2D QC nanosheet-loaded α-Fe2O3 sensor was 32%, which is significantly larger about 3.5 times than bare α-Fe2O3 sensors for 1 ppm of NO2 at 150 °C operating temperature. The sensors exhibited p-type conduction, and resistance was reduced when exposed to NO2, an oxidizing gas. The enhanced sensing characteristics are a result of the formation of nanoheterojunctions between 2D QC and α-Fe2O3, which improved the charge transport and provided a large sensing signal. In addition, the heterojunction sensor demonstrated excellent NO2 selectivity over other oxidizing and reducing gases. Furthermore, density functional theory calculation examines the adsorption energy and charge transfer between NO2 molecules on the α-Fe2O3(110) and QC/α-Fe2O3(110) heterostructure surfaces, which coincides well with the experimental results.
Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis
Bo-Ru Lai, Kuan-Ting Chen, Rajneesh Chaurasiya, Song-Xian You, Wen-Dung Hsu, et al.
Nanoscale, 2024
The proposed memristive device showcases nonlinear current responses and short-term memory behaviors, perfectly functioning as a physical reservoir with the capability to segregate 4-bit input signals and diverse temporal patterns.
Remote Health Monitoring and Alert Network System
B. Surya Kranthi Vardhan, K. Praful Ranganath, Rajneesh Chaurasiya
Proceedings 2nd IEEE International Conference on Device Intelligence Computing and Communication Technologies Dicct 2024, 2024
MOS Transistor-Based Memristor Emulator for Realization of Universal Logic Gates
Debalina Roy Choudhury, Ashish Dhakar, Rajneesh Chaurasiya, Goutam Kumar Gupta
2024 IEEE Silchar Subsection Conference Silcon 2024, 2024
Bilayered Oxide Heterostructure-Mediated Capacitance-Based Neuroplasticity Modulation for Neuromorphic Classification
Pei‐En Lin, Kuan‐Ting Chen, Rajneesh Chaurasiya, Hoang‐Hiep Le, Chia‐Hao Cheng, et al.
Advanced Functional Materials, 2023
1T and 2H mixed phase WS2 nanoflakes decorated with quasicrystal nanosheets for NO2 sensors
Sumit Kumar, Mustaque A. Khan, Shashank Shekhar Mishra, Rajneesh Chaurasiya, Nipun Sharma, et al.
Journal of Materials Chemistry C, 2023
Emerging higher-order memristors for bio-realistic neuromorphic computing: A review
Rajneesh Chaurasiya, Li-Chung Shih, Kuan-Ting Chen, Jen-Sue Chen
Materials Today, 2023
Photovoltaic characteristics of ultrathin Cs2CuBiCl6 halide double perovskite based solar cell: theoretical studies
Abhijeet J. Kale, Rajneesh Chaurasiya, Ambesh Dixit
Optik, 2023
A single‐phase, thermally stable and color-tunable white light emitting Na2Ca1-x-yCexMnyP2O7 phosphors for white light emitting diodes via energy transfer
Mohan Lal Meena, Sudipta Som, Rajneesh Chaurasiya, Shawn D. Lin, Chung-Hsin Lu
Ceramics International, 2023
Nanocomposites of Quasicrystal Nanosheets and MoS2 Nanoflakes for NO2 Gas Sensors
Sumit Kumar, Rajneesh Chaurasiya, Shashank Shekhar Mishra, Partha Kumbhakar, Gang Meng, et al.
ACS Applied Nano Materials, 2023
Enhancement of H2S sensing performance of rGO decorated CuO thin films: experimental and DFT studies
Sumit Kumar, Rajneesh Chaurasiya, Mustaque A Khan, Gang Meng, Jen-Sue Chen, et al.
Journal of Physics Condensed Matter, 2023
Strain engineered thermodynamic stability, electronic and thermoelectric characteristics of TiB2 and ZrB2 monolayers
Shubham Tyagi, Rajneesh Chaurasiya, Nirpendra Singh, Ambesh Dixit
Physica E Low Dimensional Systems and Nanostructures, 2023
Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure
Cheng-Han Lyu, Rajneesh Chaurasiya, Bo-Ru Lai, Kuan-Ting Chen, Jen-Sue Chen
Applied Physics Letters, 2022
Lead-Free Cs2BB′X6(B: Ag/Au/Cu, B′: Bi/Sb/Tl, and X: Br/Cl/I) Double Perovskites and Their Potential in Energy Conversion Applications
Abhijeet J. Kale, Rajneesh Chaurasiya, Ambesh Dixit
ACS Applied Energy Materials, 2022
Bandgap engineering and modulation of thermodynamic, and optical properties of III-N monolayers XN (X = In, Ga & Al) by mutual alloying
Nilesh Kumar, Rajneesh Chaurasiya, Frantisek Karlicky, Ambesh Dixit
Physica Scripta, 2022
First-principles simulation of neutral and charged oxygen vacancies in m-ZrO2: an origin of filamentary type resistive switching
Rajneesh Chaurasiya, Pei-En Lin, Cheng-Han Lyu, Kuan-Ting Chen, Li-Chung Shih, et al.
Nanotechnology, 2022
Low-Temperature Highly Robust Hydrogen Sensor Using Pristine ZnO Nanorods with Enhanced Response and Selectivity
Chandra Prakash, Rajneesh Chaurasiya, Abhijeet J. Kale, Ambesh Dixit
ACS Omega, 2022

Rajneesh Chaurasiya

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Scopus Publications