Wangkheirakpam Vandana Devi

Scopus Publications

TMDC-based TFETs: Progress, potential, and pathways to energy-efficient electronics
Jagritee Talukdar, Malvika, Basab Das, Ashutosh Srivastava, Wangkheirakpam Vandana Devi, Rajan Singh
Micro and Nanostructures, 2026
Bridging Memory and Computation: Reimagining Digital Logics through Memristor Technology
Dayananda Singh Khwairakpam, Vandana Devi Wangkheirakpam
Microelectronics Simulations Modeling and Applications, 2026
Memristors, first theorized by Leon Chua in 1971, represent a groundbreaking advancement in the field of electronics and have evolved into one of the most promising components of modern technology. Their potential to revolutionize fields, such as memory storage, neuromorphic computing, and artificial intelligence (AI), has captured significant attention in both academia and industry. This article offers a glimpse into the current state of memristor technology, from its theoretical origins to present-day applications, with a focus on its deployment in digital logic systems. Four categories of memristor-based digital logic systems are explored demonstrating how their in-memory computing paradigm can implement universally complete logic systems. Discussions include binary IMPLY and FALSE, binary MAGIC, ternary MAGIC, and multiple-switching binary decision trees. By leveraging the dynamic reconfigurability of memristor operating conditions, multiple logic functions can be performed within the same device, while circumventing the need for traditional data transfer between memory and processing unit.
Temperature tolerance and sensitivity analysis of vertical TFET based biosensor under the influence of interface trap charges
Vandana Devi Wangkheirakpam, Jagritee Talukdar
Micro and Nanostructures, 2025
Electricity Demand and Price Forecasting Using LSTM for Smart Grid Operations
Alok Raj Hans, Abhijeet Kumar Sharma, Vandana Devi Wangkheirakpam
Lecture Notes in Computer Science, 2025
Optimized Channel Length and Off State Current for InAs/Si Heterojunction TFET
Mayank Sachan, Wangkheirakpam Vandana Devi, Manisha Bharti
International Conference on Signal Processing and Communication ICSC, 2025
this paper contains the Optimization and Comparative study of the Planar Architecture of InAs/Si Heterojunction TFETs. Optimizations performed on the Original Model such as Channel length is reduced to 45nm and Gate Metal overlapping is introduced. Doping concentrations are varied to optimize the electrical device parameter after modifying the physical dimensions of the original model. The Optimized model presented shows some significant improvements such as Reduced off state current (Ioff) while on state current (Ion) remains same and minimum Subthreshold swing slightly increased to 7.3mV/Dec. Ion by Ioff ratio is about 1010. Comparative study with Original Model and other parameters of the optimized model are presented further in the paper.
Hetero-Stacked Source Tunnel FET-Driven Biosensing Application with Enhanced Sensitivity
Priyanshu Agrawal, Vandana Devi Wangkheirakpam, Dhandapani Vaithiyanathan
2024 4th International Conference on Advances in Electrical Computing Communication and Sustainable Technologies Icaect 2024, 2024
This paper studies the performance assessment of Hetero-Stacked Source Tunnel FET for greater responsiveness in biosensing application. The presence of Si stack over the Ge gives an improved drain current characteristic. This leads to the increase in the sensitivity up to the of 103. A comparative analysis of the TCAD simulated results of HS-TFET is made with conventional TFET based dual nanogap biosensor considering the measured sensitivity parameter. We can observe that sensitivity of HS-TFET Transistor Biosensor is of the order of 100 times that of sensitivity of C-TFET.
An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications
P. Ghosh, S. Tripathi, W. V. Devi
Applied Physics A Materials Science and Processing, 2023
Dielectric-Modulated Biosensor Based on Vertical Tunnel Field-Effect Transistor
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Smart Innovation Systems and Technologies, 2023
Optically Gated Vertical Tunnel FET for Near-Infrared Sensing Application
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam, Ghanshyam Singh
Nanoelectronics Devices Design Materials and Applications Part I, 2023
This chapter presents a vertical tunnel FET (VTFET) designed for light sensing application to use in medical diagnosis and treatment, tracking of targets, analysis of the chemical composition, surveillance cameras, etc. Various aspects related to this optimized VTFET photosensor are analyzed to benchmark its performance among those available in the literature. A brief discussion on the conventional TFET geometry is presented to give a better understanding of the advantages of its working methodologies. The concept of sensing using optically gated VTFET is studied with a remarkable focus on design perspective and detection principle. The modified TFET geometry has a photosensitive gate called an optically gated VTFET to use in near-infrared sensing applications. The design approach based on Synopsys Technology Computer-Aided Design (TCAD), along with suitable physics-based models of simulation, is introduced in this chapter. A wavelength range of 0.7µm to 1µm is considered in the simulation process. Analyses of different sensing parameters, such as sensitivity, responsivity, etc., at low intensity of illumination, are brought to light with the main focus on the viability of the proposed sensor to be a superior one. Through such analysis, this chapter presents a low-power, highly sensitive, cost-effective, faster response time photodetector that may be applicable for next-generation photosensors.
Device Physics Based Analytical Modeling and Simulation Study of Electrical Characteristics of ISFET pH-sensor
Dayananda Khwairakpam, Puspa Pukhrambam, Vandana Wangkheirakpam
Silicon, 2022
Detection of SARS-CoV-2 using dielectric modulated TFET-based biosensor
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Journal of Materials Science Materials in Electronics, 2022
Vertical tunnel fet having dual moscap geometry
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Sub Micron Semiconductor Devices Design and Applications, 2022
Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices Nusod, 2021
Investigation of Temperature Variation and Interface Trap Charges in Dual MOSCAP TFET
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Silicon, 2021
Noise behavior of vertical tunnel FETs under the influence of interface trap states
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Microelectronics Journal, 2021
Linearity performance and intermodulation distortion analysis of D-MOS vertical TFET
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Applied Physics A Materials Science and Processing, 2021
Vertical Tunnel FET Technology: Optimization and Reliability Perspective
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
2021 International Conference on Computational Performance Evaluation Compe 2021, 2021
Investigation of N+ pocket-doped junctionless vertical TFET and its digital inverter application in the presence of true noises
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Applied Physics A Materials Science and Processing, 2020
Modeling and Simulation of Optically Gated TFET for near Infra-Red Sensing Applications and Its Low Frequency Noise Analysis
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
IEEE Sensors Journal, 2020
Investigation of a dual MOSCAP TFET with improved vertical tunneling and its near-infrared sensing application
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Semiconductor Science and Technology, 2020
N+ pocket-doped vertical TFET for enhanced sensitivity in biosensing applications: Modeling and simulation
Wangkheirakpam Vandana Devi, Brinda Bhowmick, Puspa Devi Pukhrambam
IEEE Transactions on Electron Devices, 2020
N+ Pocket Doped Vertical TFET Based Dielectric-Modulated Biosensor Considering Non-Ideal Hybridization Issue: A Simulation Study
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
IEEE Transactions on Nanotechnology, 2020
Near-infrared optical sensor based on band-to-band tunnel FET
Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam
Applied Physics A Materials Science and Processing, 2019
Optimisation of pocket doped junctionless TFET and its application in digital inverter
Wangkheirakpam Vandana Devi, Brinda Bhowmick
Micro and Nano Letters, 2019
Optimization of N+ hetero pocket doped Dual metal Vertical TFET
Wangkheirakpam Vandana Devi, Brinda Bhowmick
Proceedings of the 2nd International Conference on Computing Methodologies and Communication Iccmc 2018, 2018

Wangkheirakpam Vandana Devi

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Scopus Publications