Spark Gap Electromagnetic Interference Generator Alibek Anarbayev, Sayat Moldakhmetov, Aleksandr Kislov, Dmitriy Ritter, Pavel Petrov Sist 2025 2025 IEEE 5th International Conference on Smart Information Systems and Technologies Conference Proceedings, 2025 The article presents a mobile generator of intentional electromagnetic interference (EMI) based on a spark gap and an inductive element. The developed device is designed to generate adjustable electromagnetic pulses in the frequency range of up to 2.5 GHz with an electric field intensity of up to 5 kV/m. The generator includes a boost step up power module, a spark gap, and an inductor; it can operate from a compact battery power source. Experimental studies have confirmed the effective impact of the generated interference on data transmission lines implemented with unshielded twisted pair (UTP) cables of 5e category. Analysis of oscilloscope waveforms showed that the induced interference is a damped sinusoidal signal, whose parameters can be adjusted by modifying the spark gap width and inductor configuration. The classification of the emitted interference spectrum identified the device as a mesoband-type generator. The developed generator is compact, autonomous, and suitable for evaluating the resistance of radio-electronic equipment to electromagnetic interference in conditions requiring mobile testing equipment.
RESEARCH ON THE EXPOSURE OF RADIO-ELECTRONIC EQUIPMENT TO ULTRASHORT ELECTROMAGNETIC PULSES AND MICROWAVE RADIATION Arpn Journal of Engineering and Applied Sciences, 2023 The paper considers two methods of exposure of radio-electronic equipment to ultrashort electromagnetic pulses. The methods of exposure to ultrashort electromagnetic pulses differ in the delivery of radiation energy to the IC. According to the first method, the circuit is placed in an electromagnetic field with the set amplitude frequency response. The second method implies that microwave pulses are injected directly onto the circuit pins. Thus, the main research is aimed at an experimental assessment of the stability of radio equipment and its components to ultrashort electromagnetic pulses and microwave radiation. It describes various dependences of the malfunction index for some integrated circuits (ICs) on the duration of ultrashort electromagnetic pulses and microwave radiation energy. ATmega32A and STM32F microcontroller ICs are used in the research. The paper presents findings on the stability of the IC to the exposure to of ultrashort electromagnetic pulses and microwave radiation about the manufacturing technology, i.e. the housing manufacturing techniques. Following the research, the main feature characterizing the effectiveness of exposure of microcontrollers is the amplitude of the impacting pulses.
Configurations of 6-10 kV cable lines and types of cable damages Zhanat B. Issabekov, Alexandr N. Novozhilov, Bibigul B. Issabekova, Alibek Ye. Anarbayev Aip Conference Proceedings, 2021 The article discusses the principles of electrical circuits formation and includes analysis, which showed that two-way feed ring and trunk networks are the most promising and efficient in technical and economic terms. It has also been found that, currently, in a closed configuration network in the normal operating mode of a network with two power sources, one of the lines must be disconnected. This is due to the impossibility to selectively trip a damaged line, in particular, with single phase-to-earth fault (SEF). It describes that the SEF is the main type of electrical damage in 6-10 kV cable networks.
Methods of assessing the influence of ultrashort electromagnetic pulses and ultrahigh frequency radiation on integrated circuits Anarbayev Alibek Yersainovich, Antontsev Alexandr Vitalievich, Shaikhin Agibai Kaliakovich Biosciences Biotechnology Research Asia, 2015 This paper describes the direct and indirect methods of assessing the influence of ultra-short electromagnetic pulses on integrated circuits. Stability of electronic equipment and its components under ultra-short electromagnetic pulses and ultrahigh frequency radiation has been experimentally assessed. Various dependencies of the indicator of some integrated circuits malfunction within the duration of ultra-short electromagnetic pulses and ultrahigh frequency energy have been assessed.
