Sachin Apparao Pawar
@ritsumei.ac.jp
Research Organization of Science and Technology
Ritsumeikan University, BKC, Shiga
EDUCATION
PhD Physics
MSc Physics
BSc Physics
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Ito Tomohiro, Bobur Ergashev, Yu Kawano, Abdurashid Mavlonov, Sachin A. Pawar, and Takashi Minemoto
Elsevier BV
Shukur Gofurov, Namiki Uezono, Lingga Ghufira Oktariza, Jiaqi Liu, Sachin Pawar, Muhammad M. Islam, and Takeaki Sakurai
IOP Publishing
Abstract BiVO4 thin films doped with various concentrations of sulfur were fabricated using RF sputtering followed by post-deposition sulfurization. The incorporation of sulfur in the samples was calculated to be approximately 8–11 at% from the S2s peak in their X-ray photoelectron spectra. The optical bandgap of sulfur-doped BiVO4 was generally smaller than that of the undoped sample. BiVO4 films doped with ∼8 at% sulfur showed the highest photoelectrochemical performance compared to the undoped sample. Almost similar minority-carrier lifetimes in undoped and low sulfur-doped BiVO4, measured by time resolve photoluminescence, suggest that the crystal qualities in terms of the recombination properties are roughly the same for both cases. Thus, although further investigation may be necessary, the improved photocurrent in 8 at% sulfur-doped BiVO4 in our study can roughly be attributed to the decrease in the bandgap, which facilitates more photoexcited carriers to contribute to the photoelectrochemical reaction. A further increase in sulfur doping above 10 at% distorted the BiVO4 local crystal structure, inducing defects, thus resulting in a lower photocurrent.
Namiki Uezono, Jiaqi Liu, Sachin A. Pawar, Muhammad Monirul Islam, Shigeru Ikeda, and Takeaki Sakurai
IOP Publishing
Abstract A selective fabrication method for monoclinic-scheelite (m-s) BiVO4 and tetragonal-zircon (t-z) BiVO4 thin films using radio fRequency (RF) sputtering from a single target was developed. The kinetic energy of the sputtered atoms was controlled by varying the sputtering power to obtain BiVO4 films with m-s and t-z crystalline phases. Although the band gap of the t-z BiVO4 phase (3.0 eV) was larger than that of m-s BiVO4 (2.5 eV), the deposited t-z BiVO4 films showed a comparable photocurrent density (1.5 mA cm−2) at 1.23 V versus the reversible hydrogen electrode (400 W Xe lamp). This was mainly because of the reduced sputtering damage in the t-z BiVO4 crystal, which originated from the low sputtering power as well as the deep valence-band position in t-z BiVO4 that enabled the efficient utilization of the photocarriers. This work provides insights into crystalline phase control using the particle kinetic energy in sputtering.
Jiaqi Liu, Kenichi Ozawa, Namiki Uezono, Sachin A. Pawar, Shugo Suzuki, Aboulaye Traoré, Muhammad Monirul Islam, Kazuhiko Mase, and Takeaki Sakurai
American Chemical Society (ACS)
Malik Abdul Rehman, Minjae Kim, Sachin A. Pawar, Sewon Park, Naila Nasir, Dong-eun Kim, Muhammad Farooq Khan, Van Huy Nguyen, Akendra Singh Chabungbam, Yongho Seo,et al.
Hindawi Limited
Transition metal dichalcogenide (TMDC) materials are attractive candidates for 2D solar cell devices thanks to their straightforward integration with various substrates and traditional semiconductor technologies, wide band gap ranges over the visible light spectrum, and high absorption coefficient values. Although there are several previous reports on the fabrication of 2D material-based solar cells, difficult and complex processes in the fabrication are highly required to be modified for wider use in daily life applications. Photolithography, the most commonly used manufacturing process for TMDC-based solar cells, is complicated. In this study, we demonstrate that the fabrication of 2D tungsten diselenide (WSe2) by adopting a wet transfer process with thermal release tape simplifies the manufacturing steps for TMDC-based solar cell devices. This simplification not only reduces the production cost by excluding several factors such as transmittance, thermal expansion, surface flatness, and durability but also improves the yield. Furthermore, a proof-of-concept demonstration of creating a WSe2/Si junction with an aluminum oxide (Al2O3) antireflective coating provided a power conversion efficiency of 6.39%, which is a significant improvement over that of a WSe2/Si solar cell without the antireflective coating layer (1.08%).
Sachin A. Pawar, Dipali S. Patil, Dip K. Nandi, Muhammad Monirul Islam, Takeaki Sakurai, Soo-Hyun Kim, and Jae Cheol Shin
Elsevier BV
Jiaqi Liu, Namiki Uezono, Kazuya Tajima, Sachin A. Pawar, Muhammad Monirul Islam, Shigeru Ikeda, and Takeaki Sakurai
American Chemical Society (ACS)
Aviraj M. Teli, Tejasvinee S. Bhat, Sonali A. Beknalkar, Sagar M. Mane, Latika S. Chaudhary, Dipali S. Patil, Sachin A. Pawar, Harry Efstathiadis, and Jae Cheol Shin
Elsevier BV
S.P. Patil, V.L. Patil, S.A. Vanalakar, S.S. Shendage, S.A. Pawar, J.H. Kim, Jungho Ryu, Deepak R. Patil, and P.S. Patil
Elsevier BV
Aviraj M. Teli, Sonali A. Beknalkar, Sagar M. Mane, Latika S. Chaudhary, Dipali S. Patil, Sachin A. Pawar, Harry Efstathiadis, and Jae Cheol Shin
Elsevier BV
S.A. Beknalkar, A.M. Teli, N.S. Harale, D.S. Patil, S.A. Pawar, J.C. Shin, and P.S. Patil
Elsevier BV
Imane Abdellaoui, Muhammad M. Islam, Mikas Remeika, Sorai Kanno, Riku Okamoto, Kazuya Tajima, Sachin A. Pawar, Yun Hau Ng, Christian Budich, Tsuyoshi Maeda,et al.
American Chemical Society (ACS)
Monoclinic BiVO4 is a promising material for realizing low-cost visible-light water splitting. Here, we report the incorporation mechanism of Zr into solution-processed BiVO4. Characterization of t...
Dipali S. Patil, Aviraj M. Teli, Won Jun Choi, Sachin A. Pawar, Jae Cheol Shin, and Hyo Jin Kim
Elsevier BV
Aviraj M. Teli, Sonali A. Beknalkar, Sachin A. Pawar, Deepak P. Dubal, Tukaram D. Dongale, Dipali S. Patil, Pramod S. Patil, and Jae Cheol Shin
MDPI AG
In this study, amorphous manganese oxide (MnO2) nanostructured thin films were synthesized by a simple hydrothermal method. It is well known that the nanostructure plays a crucial role in energy storage applications. Herein, MnO2 nanostructures ranging from plates to flakes were synthesized without the use of any hard or soft templates. The 4+ oxidation state of Mn was confirmed by X-ray photoelectron spectroscopy. The MnO2 nanoflake structure has a specific surface area of 46 m2g−1, which provides it with an excellent rate capability and an exactly rectangular cyclic voltammogram (CV) curve. The MnO2 nanoflake electrode has a high specific capacitance of about 433 Fg−1, an energy density of 60 Whkg−1 at 0.5 mAcm−2, and an excellent cyclic stability of 95% over 1000 CV cycles in 1 M aq. Na2SO4. Kinetics analysis of the charge storage in the nanoflake MnO2 sample shows a 55.6% diffusion-controlled contribution and 44.4% capacitive-controlled contribution to the total current calculated at a scan rate of 100 mVs−1 from the CV curve.
Sachin A. Pawar, Dipali S. Patil, Jae Cheol Shin, and Hyo Jin Kim
Elsevier BV
Dipali S. Patil, Sachin A. Pawar, Hyo Jin Kim, and Jae Cheol Shin
MDPI AG
This work presents a synthesis of hierarchical manganese–iron-layered double hydroxide (MnFe-LDH) nanostructured electrodes using the hydrothermal synthesis route by varying the reaction time for electrochemical energy storage applications. The electrochemical behavior of the MnFe-LDH electrodes synthesized at different reaction times was analyzed in a three-electrode cell configuration using 2 M KOH electrolyte. The uniform and well-organized MnFe-LDH nanosheet electrode (MnFe-12h) showed the maximum areal capacitance of 2013 mFcm−2 at a 5 mVs−1 scan rate, and 1886 mFcm−2 at a 25 mA applied current. Furthermore, the electrochemical behavior of MnFe-12h was examined by assembling an asymmetric cell device using activated carbon (AC) as a negative electrode and MnFe-12h as a positive electrode and it was tested in a wide voltage window range of 0.0 to 1.6 V. This asymmetric cell device achieved an appropriate energy density of 44.9 µW h cm−2 (55.01 W h kg−1), with a power density of 16 mW cm−2 (5000 W kg−1) at an applied current of 10 mA, and had a long-term cycling stability (93% capacitance retention after 5000 cycles) within the 1.6 V operating voltage window.
Swetha S.M. Bhat, Sachin A. Pawar, Darshna Potphode, Chang-Ki Moon, Jun Min Suh, Changyeon Kim, Seokhoon Choi, Dipali S. Patil, Jang-Joo Kim, Jae Cheol Shin,et al.
Elsevier BV
Aviraj M. Teli, Sonali A. Beknalkar, Dipali S. Patil, Sachin A. Pawar, Deepak P. Dubal, Vishranti Y. Burute, Tukaram D. Dongale, Jae Cheol Shin, and Pramod S. Patil
Elsevier BV
Dipali S. Patil, Sachin A. Pawar, Seong Hun Lee, and Jae Cheol Shin
Elsevier BV
Sagar M. Mane, Sachin A. Pawar, Dipali S. Patil, Seong Hun Lee, and Jae Cheol Shin
The Korean Vacuum Society
Sagar M. Mane, Sachin A. Pawar, Dipali S. Patil, Shrinivas B. Kulkarni, Nishant T. Tayade, and Jae Cheol Shin
Elsevier BV
Dipali S. Patil, Sachin A. Pawar, Jongwon Ryu, Jae Cheol Shin, and Hyo Jin Kim
Elsevier BV
A.M. Teli, S.A. Bekanalkar, D.S. Patil, S.A. Pawar, T.D. Dongale, J.C. Shin, H.J. Kim, and P.S. Patil
Elsevier BV
Swetha S.M. Bhat, Sachin A. Pawar, Darshna Potphode, Chang-Ki Moon, Jun Min Suh, Changyeon Kim, Seokhoon Choi, Dipali S. Patil, Jang-Joo Kim, Jae Cheol Shin,et al.
Elsevier BV
Dipali S. Patil, Sachin A. Pawar, Jae Cheol Shin, and Hyo Jin Kim
Elsevier BV