Abhigyan Ganguly
@surtech.edu.in
Faculty
Dr. Sudhir Chandra Sur Institute of Technology and Sports Complex
Dr. Abhigyan Ganguly, currently working as Asst. prof. in ECE, SurTech. Has Post Doctoral experience from UKZN, Durban and Ph.D from NIT Silchar in 2019. He has an M.Tech degree in VLSI and Microelectronics and a B.Tech in ECE. He has authored several research articles in reputed international journals and conferences, and also has authored many scientific book chapters
EDUCATION
Post Doctoral Research Fellowship,
Ph.D In Nano-Electronics,
M.Tech in VLSI and Microelectronics,
B.Tech in Electronics and Communication Engg.
RESEARCH INTERESTS
Quantum Dot Solar Cell, Nanotechnology, Optoelectronics
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Abhigyan Ganguly, Siddhartha S. Nath, and Viranjay M. Srivastava
Springer Nature Singapore
Vishal Jha, Somnath Dasgupta, and Abhigyan Ganguly
IEEE
PbS is generally used as the preferred material for sensitizing layer in solar cells due to its wide range of band-gap tunability. As the light absorption in in sensitizing layer of solar cell depands on the band gap of the material, hence nano-crystalline PbS has a wider range of light absorption starting from the UV up to the NIR regions of the solar spectrum. In the present study we have simulated a FTO/ZnO/PbS/Al type structure using SCAPS-1D simulator, and the Current density curve is obtained for voltage characteristics is studied. With an aim of studying the effect of the thickness of the sensitization layer on the working of solar cell, the thickness of the nano-crystalline PbS layer is varied and the values of the essential solar cell factorsare acquired for the simulated solar cell.
Abhigyan Ganguly and Rupam Goswami
Elsevier
Abhigyan Ganguly and Siddhartha Sankar Nath
Institute of Electrical and Electronics Engineers (IEEE)
SnO2 quantum dots have been synthesized using simple low cost chemical quenching method and they are exposed to 100MeV swift heavy ions of copper, with doses of 1 × 1011 and 2 × 1011 ions/cm2. The samples are characterized using standard characterization instruments such as UV/VIS spectroscopy, X-ray diffraction study (XRD), Raman spectroscopy, and high resolution transmission electron microscopy (HRTEM). The irradiated as well as the pristine quantum dots of SnO2 are introduced into ZnO on TCO substrate to fabricate different nano light emitting device (LED). The electroluminescence (EL) variation with change in supply voltage is studied at room temperature. An enhancement in EL intensity has been obtained with increase in ion irradiation doses in quantum dot LEDs, when compared to pristine one. Also, the almost instantaneous response time and linear variation of emission intensity with voltage makes these low doses of swift heavy ion irradiated SnO2 quantum dots a more suitable material for EL-based devices.
Abhigyan Ganguly and Viranjay M. Srivastava
Springer Nature Singapore
Abhigyan Ganguly, Siddhartha S. Nath, and Viranjay M. Srivastava
IEEE
In the present research work CdS based quantum dots embedded in the Poly-Vinyl-Pyrrolidone (PVP) capping layer have been synthesized via a simple chemical method and CdS quantum dot operation nano Light-emitting device. The nanoparticles have been characterized using standard techniques to reveal their optical and structural properties. A Light-Emitting Device (LED) has been fabricated using the CdS quantum dots, and the Electro-Luminescence (EL) phenomenon has been analyzed for a range of applied voltage, at room temperature. The obtained emission characteristics are almost linear with voltage, which indicates that CdS nano-dots are suitable for the light-emitting device.
Abhigyan Ganguly and Viranjay M. Srivastava
IEEE
Transition metal ion doped quantum dots finds their wide range of use in the field of photonics and photovoltaics. In this research work, CdS quantum dots, with Fe ion doping, are synthesized using simple One Pot Synthesis chemical method. The polymer matrix used in the synthesis is Polyvinyl Alcohol (PVA) matrix, which restricts the size of quantum dot while not itself participating in the reaction. Three doping concentrations are 3%, 6%, and 9%, by weight of Fe have been used for doping of CdS. The synthesized quantum dots are also analyzed using Ultraviolet Visible (UV-Vis) Absorption, X-Ray Diffraction (XRD), and HRTEM microscopy to study their optical and crystallographic properties.
A. Ganguly and S.S. Nath
Elsevier BV
Abhigyan Ganguly, Siddhartha Sankar Nath, and Madhuchhanda Choudhury
Institution of Engineering and Technology (IET)
Copper ions are incorporated into the PbS quantum dots as dopants via a chemical method and an ion irradiation method. For irradiating the samples, a 100 MeV copper swift heavy ion beam is used with three different doses of 1 × 10
11
, 3 × 10
11
, and 1 × 10
12
ions/cm
2
. The doped and irradiated samples are characterised by different techniques and introduced as a sensitising layer in a solar cell. The current density-voltage characteristics of the solar cells are studied under white light illumination conditions and the solar cell parameters such as J
sc
, V
oc
, fill factor, and efficiency are obtained. Efficiency as high as 4.78% is obtained for irradiated quantum dots, which is significantly higher than that of pristine and doped quantum dot solar cells. However, at higher ion dosage, the solar cell efficiency degrades due to unwanted particle agglomeration in quantum dots.
Avtar Singh, Saurabh Chaudhury, Chandan Kumar Sarkar, Inamul Hussain, and Abhigyan Ganguly
IEEE
An effective way to get multiple threshold voltage modulation scheme in Silicon nano tube FET combining unbalanced halo doping is proposed and verified by 3D TCAD Simulator. The typical choice to accomplish multiple threshold voltages is by choosing the appropriate gate work-function for each device. But this results in higher process complexity. In this report we demonstrate the multiple Vtsolution for Si-NTFET at 14 nm technology node. Using HALO at source side, the simulated DIBL (Drain induced Barrier Lowering)characteristics shows notable improvement.
Abhigyan Ganguly, Siddhartha Sankar Nath, and Madhuchhanda Choudhury
Institute of Electrical and Electronics Engineers (IEEE)
The effect of Mn-ion doping on the device performance of multilayer PbS quantum dot (QD) sensitized solar cells is investigated. Undoped as well as the doped PbS QDs, with different doping concentration, are synthesized using simple chemical methods on poly-vinyl alcohol matrix. QDs are characterized using ultraviolet visible spectroscopy, x-ray diffraction analysis, high-resolution transmission electron microscopy, energy dispersive x-ray, and photoluminescence spectroscopy. The QDs were introduced as sensitizer in ZnO-based solar cells in single as well as multiple layers. The current density vs. voltage characteristics are obtained for different Mn doping concentrations as well as for multiple numbers of QD layers, under artificial illumination. Enhanced photo-conversion efficiency was observed in multiple layered doped PbS QDs sensitized solar cell compared to undoped QDs sensitized solar cell.
Abhigyan Ganguly, Siddhartha Sankar Nath, and Madhuchhanda Choudhury
Institute of Electrical and Electronics Engineers (IEEE)
The influence of high energy ion beam [swift heavy ion (SHI)] on CdS quantum dots that are used as a sensitizer in a solar cell is studied in this letter. A 100-MeV copper ion beam is selected for irradiation experiment with doses of <inline-formula> <tex-math notation="LaTeX">$1\\times 10^{11}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$3\\times 10^{11}$ </tex-math></inline-formula> ions/cm<sup>2</sup>. With an increase in the dose, the optical absorption edge of irradiated quantum dots reveals a little red shift with respect to that of unirradiated (pristine) ones. The irradiated quantum dots are introduced as a sensitizer on a ZnO photoelectrode solar cell. An increase in the current density is observed for irradiated samples at a lower dose, while at a higher dose, the current density decreases. In addition, the other parameters, like open circuit voltage, fill factor, and photo-conversion efficiency, are also reported for the SHI-irradiated quantum dot sensitized solar cell.
Siddhartha S. Nath, Abhigyan Ganguly, Gautam Gope, and Maitreyi R. Kanjilal
Institute of Electrical and Electronics Engineers (IEEE)
This article reports the synthesis of ZnS quantum dots (QDs) embedded in polyvinylpyrrolidone matrix via a simple chemical technique and its novel application as a nano-light-emitting device. The synthesized specimen has been characterized by using UVVis spectroscopy, X-ray diffraction study, atomic force microscopy, and high-resolution transmission electron microscopy. These studies indicate the sizes of QDs to be within 8nm. The prepared QD samples have been examined in a fabricated ZnOQD-based nano-light-emitting device by exploring the variation of electroluminescence (EL) (light emission phenomenon) with supply voltage at room temperature. The almost linear variation of EL intensity with voltage is obtained for a specific range of voltage, which makes ZnS nanoparticles suitable for light-emitting devices.
Abhigyan Ganguly, Siddhartha S. Nath, and Madhuchhanda Choudhury
Institution of Engineering and Technology (IET)
Copper (Cu)-doped cadmium sulphide (CdS) quantum dots (QDs) sensitised zinc oxide photoelectrodes have been fabricated for a solar cell (SC). For the synthesis of QDs, simple chemical methods have been adapted and the QDs were prepared on poly-vinyl alcohol capping agent. The influences of doping on structural properties of QDs have been studied using X-ray diffraction analysis and transmission electron microscopy images. Ultraviolet-visible absorption spectroscopy reveals an enhanced optical absorption in doped QDs. The photovoltaic performance of the Cu-doped CdS QDs was studied by measuring the current density-voltage (
J-V
) characteristics of the fabricated SC. An enhanced photo-conversion efficiency was observed in doped CdS QDs compared with the undoped QDs sensitised SC.
Abhigyan Ganguly, Siddhartha Sankar Nath, Gautam Gope, and Madhuchhanda Choudhury
Inderscience Publishers
Quantum dot sensitised solar cells (QDSSC) is generally fabricated using transparent conducting (TCO) glass plates and platinum or gold as electrodes. The article reports a modified back side illuminated QDSSC structure utilising aluminium foil as electrodes. PbS quantum dots have been synthesised using simple chemical method and are utilised as sensitisers in a ZnO-based solar cell structure. Two types of QDSSCs are fabricated using the same quantum dots, i.e., one using ITO glass plate and the other using aluminium. The solar cell parameters are obtained for both the structures and their comparative analysis is reported in the paper.
Abhigyan Ganguly, Madhuchhanda Choudhury, Siddhartha Sankar Nath, and Gautam Gope
IEEE
The properties of materials drastically change when matter performs a transition from bulk to nano size. The quantum dots (QDs) of lead sulphide (PbS) embedded into Polyvinyl alcohol (PVA) are synthesized via one pot synthesis chemical method. The specimen has been analyzed by UV/VIS absorption spectroscopy, High resolution transmission electron microscopy (HRTEM) and fluorescence spectroscopy. Quantum Dot size is calculated from the absorption spectra using hyperbolic band model and sizes of the dots are found to be around 6nm and the calculated value is in agreement with the size as determined by HRTEM. The photoluminescence spectra was also obtained for the samples.