sridhar chandrasekaran

Scopus Publications

Memristor Synapse—A Device-Level Critical Review
Sridhar Chandrasekaran, Yao-Feng Chang, Firman Mangasa Simanjuntak
Nanomaterials, 2026
The memristor has long been known as a nonvolatile memory technology alternative and has recently been explored for neuromorphic computing, owing to its capability to mimic the synaptic plasticity of the human brain. The architecture of a memristor synapse device allows ultra-high-density integration by internetworking with crossbar arrays, which benefits large-scale training and learning using advanced machine-learning algorithms. In this review, we present a statistical analysis of neuromorphic computing device publications from 2018 to 2025, focusing on various memristive systems. Furthermore, we provide a device-level perspective on biomimetic properties in hardware neural networks such as short-term plasticity (STP), long-term plasticity (LTP), spike timing-dependent plasticity (STDP), and spike rate-dependent plasticity (SRDP). Herein, we highlight the utilization of optoelectronic synapses based on 2D materials driven by a sequence of optical stimuli to mimic the plasticity of the human brain, further broadening the scope of memristor controllability by optical stimulation. We also highlight practical applications ranging from MNIST dataset recognition to hardware-based pattern recognition and explore future directions for memristor synapses in healthcare, including artificial cognitive retinal implants, vital organ interfaces, artificial vision systems, and physiological signal anomaly detection.
A critical review on printed electronics and its application
Sritama Roy, Lakshmi Priya Ramakrishnan, Rangesh Vasudevan, Sridhar Chandrasekaran
Nanotechnology, 2025
In light of the industry’s environmental constraints, sustainable manufacturing technology has emerged as a critical goal for emerging applications. Due to the increased need for electronic production around the world, the requirement for environmentally safe technology is the necessity of this decade as the world government shifts towards sustainability in all manufacturing technology. Henceforth, printed electronics will be one such solution to regulate the electronic device and components production requirement of this decade. The article has discussed about the recent advances in inkjet-printed electronics across a wide range of electronics applications. We have discussed several inkjet printing inks and their formulation methods, which are required for minimizing environmental waste. In addition, we have discussed the future scope of printed electronics production and its impact on the economy as well as the environment.
Exploring the Switching Instability of CBRAM for Random Number Generator Applications
Weixin Xu, Hajira S. Bazaz, Asep Nugroho, Irwan Purnama, Zohreh Hajiabadi, et al.
Iet Circuits Devices and Systems, 2025
The coexistence of nonvolatile and volatile switching characteristics in ZnO‐based conducting bridge random access memory (CBRAM) devices and the feasibility of the cycle‐to‐cycle fluctuation of both characteristics for data storage and random number generator (RNG) applications are investigated. The insertion of a 6‐nm‐thick Ti barrier layer between the Ag top electrode (TE) and the ZnO switching layer improves the switching stability and the memory window up to five orders of magnitude. The employment of current compliance (CC) of 1 mA leads to a permanent LRS; meanwhile, CC lower than 100 uA exhibits volatile switching characteristics. Although the lower CC operations might not be applicable for data storage applications, their switching fluctuations can be used as inputs for generating random bitstreams. An RNG circuit design is proposed, and the randomness of the bitstreams is evaluated using the NIST randomness test suite. The volatile switching induced by the lower CC tends to produce bitstreams with a better randomicity than the nonvolatile one, where the resistance state of the device operated with a CC of 10 uA is able to generate 1600 bits that pass seven out of seven NIST tests. We conduct statistical analysis to shed light on the relationship between the resistance states and the quality of the produced random bitstream. In contrast to popular opinion, the coefficient of variation might not be the best method to quantify the fluctuation of the resistance state in our case. Therefore, we propose the switching fluctuation factor (FF) to determine the threshold value of the resistance state that can produce a sufficient random bitstream; it is found that our RNG circuit requires a threshold FF of 96% to produce a bitstream that passes at least four out of seven tests. This work not only proposes a solution to enhance the switching stability for data storage applications but also provides insight into the exploitation of switching instability for RNG applications, where a single device can be programmed to have both capabilities, rendering programmable and multifunctional electronics.
ZnO-based memristor for random number generator: The case of current compliance
Zohreh Hajiabadi, Irwan Purnama, Asep Nugroho, Hanyu Cao, Sridhar Chandrasekaran, et al.
Electronics Letters, 2025
This study aims to exploit the resistance states of Cr/ZnO/TiN memristors to generate random numbers. A random number generator (RNG) circuit employing a single memristor is proposed. We suggest that current compliance (CC) is a significant parameter in determining the quality of randomness; it is found that low CCs (20‐50 µA) have a wide resistance state distribution that facilitates random bits. This work provides insight into the implementation of memristors for data security applications.
Exploring luminescent carbon dots derived from syrup bottle waste and curcumin for potential antimicrobial and bioimaging applications
Natesan Thirumalaivasan, Kuppusamy Kanagaraj, Kamaraj Logesh, Sridhar Chandrasekaran, Sandeep Kumar, et al.
Chemosphere, 2024
Design and Manufacturing of 3D Printed Sensors for Biomedical Applications
Sridhar Chandrasekaran, Arunkumar Jayakumar, Rajkumar Velu, S. Stella Mary
Digital Design and Manufacturing of Medical Devices and Systems, 2024
High-Performance TiN/TaOx/TiN Selectors with Short-Term Memory Characteristics
Sourodeep Roy, Mari Napari, Dimitra G. Georgiadou, Sridhar Chandrasekaran, Bhaswar Chakrabarti, et al.
IEEE Transactions on Electron Devices, 2024
We present TiN/TaOx/TiN device structure showing varistor and short-term memory (STM) characteristics that could be useful for selector applications and temporal processing in one-selector one-RRAM (1S1R) architectures. The devices show high selectivity (<inline-formula> <tex-math notation="LaTeX">$10^{{3}}$ </tex-math></inline-formula>) and excellent endurance (one million cycles) and can sustain high-voltage stress (<inline-formula> <tex-math notation="LaTeX">$10^{{3}}$ </tex-math></inline-formula> s). The varistor behavior persists with device scaling down to <inline-formula> <tex-math notation="LaTeX">$2.25~\\mu $ </tex-math></inline-formula>m2 and thickness as thin as 2 nm. Moreover, the device exhibits a volatile switching behavior under pulse programming that could offer an additional analog output from single-digital input feed into the integrated 1S1R arrays.
γ-Ray-Induced Effects in Al:HfO-Based Memristor Devices for Memory and Sensor Applications
Om Kumar Prasad, Sridhar Chandrasekaran, Mari Napari, Irwan Purnama, Asep Nugroho, et al.
IEEE Electron Device Letters, 2024
Impact of Mn2+ substitution on physical and antibacterial properties of ZnFe2O4 nanoparticles
Nadhiya Dakshina Murthy, Kala Arumugam, Thirunavukkarasu Palaniyandi, Sridhar Chandrasekaran, Karnan Chandran
Bulletin of Materials Science, 2023
Structural, spectral and photoluminescence analyses of Fe3+ doped methyl hydroxy(diphenyl)ethanoate (MHE) crystal
S. Nishanth, S. Nivithaa, C. Sridhar, K.S. Nagaraja, C. Karnan
Journal of Molecular Structure, 2023
ZTO/MgO-Based Optoelectronic Synaptic Memristor for Neuromorphic Computing
Chia-Cheng Hsu, Saransh Shrivastava, Sparsh Pratik, Sridhar Chandrasekaran, Tseung-Yuen Tseng
IEEE Transactions on Electron Devices, 2023
Financial Cryptography and Its Application in Blockchain
V. Sathya, Sridhar Chandrasekaran, Govindasamy Madhaiyan
Homomorphic Encryption for Financial Cryptography Recent Inventions and Challenges, 2023
Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing
Om Kumar Prasad, Sridhar Chandrasekaran, Chin-Han Chung, Kow-Ming Chang, Firman Mangasa Simanjuntak
Applied Physics Letters, 2022
A Comprehensive Review on Printed Electronics: A Technology Drift towards a Sustainable Future
Sridhar Chandrasekaran, Arunkumar Jayakumar, Rajkumar Velu
Nanomaterials, 2022
Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications
Sailesh Rajasekaran, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Aftab Saleem, et al.
IEEE Electron Device Letters, 2022
Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Sailesh Rajasekaran, Cut Rullyani, et al.
Applied Physics Letters, 2021
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
Aftab Saleem, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Sailesh Rajasekaran, Tseung-Yuen Tseng, et al.
Applied Physics Letters, 2021
Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory
Firman Mangasa Simanjuntak, Debashis Panda, Sridhar Chandrasekaran, Rakesh Aluguri, Chun-Chieh Lin, et al.
Journal of Electroceramics, 2021
An Obfuscation Technique for Malware Detection and Protection in Sandboxing
V. Sathya, Kirankumar Manivannan, V. Vani, Sridhar Chandrasekaran
Studies in Computational Intelligence, 2021
Fast, highly flexible, and transparent taox-based environmentally robust memristors for wearable and aerospace applications
Sailesh Rajasekaran, Firman Mangasa Simanjuntak, Debashis Panda, Sridhar Chandrasekaran, Rakesh Aluguri, et al.
ACS Applied Electronic Materials, 2020
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
Lung-Yu Chang, Firman Mangasa Simanjuntak, Chun-Ling Hsu, Sridhar Chandrasekaran, Tseung-Yuen Tseng
Applied Physics Letters, 2020
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Firman Mangasa Simanjuntak, Takeo Ohno, Sridhar Chandrasekaran, Tseung-Yuen Tseng, Seiji Samukawa
Nanotechnology, 2020
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
Pei-Yu Jung, Debashis Panda, Sridhar Chandrasekaran, Sailesh Rajasekaran, Tseung-Yuen Tseng
IEEE Journal of the Electron Devices Society, 2020
Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory
Debashis Panda, Firman M. Simanjuntak, Sridhar Chandrasekaran, Bhaskar Pattanayak, Pragya Singh, et al.
IEEE Transactions on Nanotechnology, 2020
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, Debashis Panda, Tseung-Yuen Tseng
IEEE Transactions on Electron Devices, 2019

RECENT SCHOLAR PUBLICATIONS

Memristor Synapse—A Device-Level Critical Review
S Chandrasekaran, YF Chang, FM Simanjuntak
Nanomaterials 16 (3), 179 , 2026
2026
Citations: 1
A critical review on printed electronics and its application
S Roy, LP Ramakrishnan, R Vasudevan, S Chandrasekaran
Nanotechnology , 2025
2025
Citations: 6
Exploring the Switching Instability of CBRAM for Random Number Generator Applications
W Xu, HS Bazaz, A Nugroho, I Purnama, Z Hajiabadi, A Graham, ...
IET Circuits, Devices & Systems 2025 (1), 9982211 , 2025
2025
ZnO‐based memristor for random number generator: The case of current compliance
Z Hajiabadi, I Purnama, A Nugroho, H Cao, S Chandrasekaran, ...
Electronics Letters 61 (1), e70165 , 2025
2025
γ-ray-induced Effects in Al: HfO2-based Memristor Devices for Memory and Sensor Applications
OK Prasad, S Chandrasekaran, M Napari, I Purnama, A Nugroho, ...
IEEE Electron Device Letters 45 (11), 2082 - 2085 , 2024
2024
Citations: 5
Feasibility study of analogue filters based on memristor
S Gao, S Chandrasekaran, I Purnama, FM Simanjuntak
The Journal of Engineering 2024 (11), e70028 , 2024
2024
ZnO-Based Memristor for Random Number Generator: The Case of Current Compliance
Z Hajiabadi, I Purnama, A Nugroho, H Cao, S Chandrasekaran, ...
Authorea Preprints , 2024
2024
High-Performance TiN/TaO x /TiN Selectors With Short-Term Memory Characteristics
S Roy, M Napari, DG Georgiadou, S Chandrasekaran, B Chakrabarti, ...
IEEE Transactions on Electron Devices 71 (9), 5775-5778 , 2024
2024
Invisible ZnO-based Memristor Universal Logic for Reconfigurable Electronics
C Hua, S Chandrasekaran, S Gao, DG Georgiadou, Z Hajiabadi, ...
Authorea Preprints , 2024
2024
Exploring the switching nonuniformity of CBRAM for random number generators
W Xu, A Nugroho, I Purnama, Z Hajiabadi, A Graham, AH Wang, ...
Authorea Preprints , 2024
2024
Citations: 1
Exploring luminescent carbon dots derived from syrup bottle waste and curcumin for potential antimicrobial and bioimaging applications
N Thirumalaivasan, K Kanagaraj, K Logesh, S Chandrasekaran, S Kumar, ...
Chemosphere 354, 141592 , 2024
2024
Citations: 43
Design and manufacturing of 3D printed sensors for biomedical applications
S Chandrasekaran, A Jayakumar, R Velu, SS Mary
Digital Design and Manufacturing of Medical Devices and Systems, 63-76 , 2024
2024
Citations: 3
Structural, spectral and photoluminescence analyses of Fe3+ doped methyl hydroxy (diphenyl) ethanoate (MHE) crystal
S Nishanth, S Nivithaa, C Sridhar, KS Nagaraja, C Karnan
Journal of Molecular Structure 1285, 135501 , 2023
2023
Citations: 15
Financial Cryptography and Its Application in Blockchain
V Sathya, S Chandrasekaran, G Madhaiyan
Homomorphic Encryption for Financial Cryptography: Recent Inventions and … , 2023
2023
Impact of Mn 2+ substitution on physical and antibacterial properties of ZnFe 2 O 4 nanoparticles
N Dakshina Murthy, K Arumugam, T Palaniyandi, S Chandrasekaran, ...
Bulletin of Materials Science 46 (3), 151 , 2023
2023
Citations: 7
ZTO/MgO-based optoelectronic synaptic memristor for neuromorphic computing
CC Hsu, S Shrivastava, S Pratik, S Chandrasekaran, TY Tseng
IEEE Transactions on Electron Devices 70 (3), 1048-1054 , 2023
2023
Citations: 38
Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing
OK Prasad, S Chandrasekaran, CH Chung, KM Chang, FM Simanjuntak
Applied Physics Letters 121 (23) , 2022
2022
Citations: 10
A comprehensive review on printed electronics: a technology drift towards a sustainable future
S Chandrasekaran, A Jayakumar, R Velu
Nanomaterials 12 (23), 4251 , 2022
2022
Citations: 69
Digital-to-Analog Transformation
FM Simanjuntak, S Chandrasekaran, D Panda, A Saleem, T Prodromakis
Memristor: An Emerging Device for Post-Moore’s Computing and Applications, 149 , 2021
2021
Memristor: An Emerging Device for Post-Moore’s Computing and Applications
YF Chang
BoD–Books on Demand , 2021
2021
Citations: 4

MOST CITED SCHOLAR PUBLICATIONS

Improving linearity by introducing Al in HfO 2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng
Nanotechnology 30 (44), 445205 , 2019
2019
Citations: 149
Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme
S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng
IEEE Transactions on Electron Devices 66 (11), 4722-4726 , 2019
2019
Citations: 75
A comprehensive review on printed electronics: a technology drift towards a sustainable future
S Chandrasekaran, A Jayakumar, R Velu
Nanomaterials 12 (23), 4251 , 2022
2022
Citations: 69
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
A Saleem, FM Simanjuntak, S Chandrasekaran, S Rajasekaran, ...
Applied Physics Letters 118 (11) , 2021
2021
Citations: 63
Enhanced Switching Properties in TaO x Memristors Using Diffusion Limiting Layer for Synaptic Learning
PY Jung, D Panda, S Chandrasekaran, S Rajasekaran, TY Tseng
IEEE Journal of the Electron Devices Society 8, 110-115 , 2020
2020
Citations: 61
Fast, Highly Flexible, and Transparent TaO x -Based Environmentally Robust Memristors for Wearable and Aerospace Applications
S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ...
ACS Applied Electronic Materials 2 (10), 3131-3140 , 2020
2020
Citations: 59
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
FM Simanjuntak, T Ohno, S Chandrasekaran, TY Tseng, S Samukawa
Nanotechnology 31 (26), 26LT01 , 2020
2020
Citations: 57
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
APL Materials 7 (5) , 2019
2019
Citations: 57
Exploring luminescent carbon dots derived from syrup bottle waste and curcumin for potential antimicrobial and bioimaging applications
N Thirumalaivasan, K Kanagaraj, K Logesh, S Chandrasekaran, S Kumar, ...
Chemosphere 354, 141592 , 2024
2024
Citations: 43
Synthesis of mesoporous NiFe2O4 nanoparticles for enhanced supercapacitive performance
N Kumar, A Kumar, S Chandrasekaran, TY Tseng
J. Clean Energy Technol 6 (1), 51-55 , 2018
2018
Citations: 43
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, S Chandrasekaran, B Pattanayak, CC Lin, TY Tseng
Nanotechnology 28 (38), 38LT02 , 2017
2017
Citations: 42
ZTO/MgO-based optoelectronic synaptic memristor for neuromorphic computing
CC Hsu, S Shrivastava, S Pratik, S Chandrasekaran, TY Tseng
IEEE Transactions on Electron Devices 70 (3), 1048-1054 , 2023
2023
Citations: 38
Flexible Ta 2 O 5 /WO 3 -Based Memristor Synapse for Wearable and Neuromorphic Applications
S Rajasekaran, FM Simanjuntak, S Chandrasekaran, D Panda, A Saleem, ...
IEEE Electron Device Letters 43 (1), 9-12 , 2021
2021
Citations: 38
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, P Singh, S Chandrasekaran, FJ Lumbantoruan, ...
Semiconductor Science and Technology 32 (12), 124003 , 2017
2017
Citations: 37
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
LY Chang, FM Simanjuntak, CL Hsu, S Chandrasekaran, TY Tseng
Applied Physics Letters 117 (7) , 2020
2020
Citations: 35
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random …
S Chandrasekaran, FM Simanjuntak, R Aluguri, TY Tseng
Thin Solid Films 660, 777-781 , 2018
2018
Citations: 35
Switching failure mechanism in zinc peroxide-based programmable metallization cell
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
Nanoscale Research Letters 13 (1), 327 , 2018
2018
Citations: 34
Synaptic behaviour of TiO x /HfO 2 RRAM enhanced by inserting ultrathin Al 2 O 3 layer for neuromorphic computing
D Panda, CA Chu, A Pradhan, S Chandrasekharan, B Pattanayak, ...
Semiconductor Science and Technology 36 (4), 045002 , 2021
2021
Citations: 33
Controlled resistive switching characteristics of ZrO 2 -based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
S Chandrasekaran, FM Simanjuntak, TY Tseng
Japanese journal of applied physics 57 (4S), 04FE10 , 2018
2018
Citations: 31
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
S Chandrasekaran, FM Simanjuntak, TL Tsai, CA Lin, TY Tseng
Applied Physics Letters 111 (11) , 2017
2017
Citations: 31

sridhar chandrasekaran

RESEARCH INTERESTS

Scopus Publications

RECENT SCHOLAR PUBLICATIONS

MOST CITED SCHOLAR PUBLICATIONS